JP2001516948A5 - - Google Patents
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- Publication number
- JP2001516948A5 JP2001516948A5 JP2000512233A JP2000512233A JP2001516948A5 JP 2001516948 A5 JP2001516948 A5 JP 2001516948A5 JP 2000512233 A JP2000512233 A JP 2000512233A JP 2000512233 A JP2000512233 A JP 2000512233A JP 2001516948 A5 JP2001516948 A5 JP 2001516948A5
- Authority
- JP
- Japan
- Prior art keywords
- shroud
- dielectric
- annular
- workpiece
- shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 description 2
- 210000002381 Plasma Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US93186497A | 1997-09-16 | 1997-09-16 | |
US08/931,864 | 1997-09-16 | ||
PCT/US1998/017042 WO1999014788A1 (fr) | 1997-09-16 | 1998-08-17 | Ecran ou anneau entourant une piece de semi-conducteur a traiter dans une chambre a plasma |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001516948A JP2001516948A (ja) | 2001-10-02 |
JP2001516948A5 true JP2001516948A5 (fr) | 2006-02-09 |
JP4602545B2 JP4602545B2 (ja) | 2010-12-22 |
Family
ID=25461470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000512233A Expired - Fee Related JP4602545B2 (ja) | 1997-09-16 | 1998-08-17 | プラズマチャンバの半導体ワークピース用シュラウド |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4602545B2 (fr) |
TW (1) | TW401606B (fr) |
WO (1) | WO1999014788A1 (fr) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6257168B1 (en) * | 1999-06-30 | 2001-07-10 | Lam Research Corporation | Elevated stationary uniformity ring design |
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
US6363882B1 (en) * | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
US6489249B1 (en) * | 2000-06-20 | 2002-12-03 | Infineon Technologies Ag | Elimination/reduction of black silicon in DT etch |
JP2002222795A (ja) * | 2001-01-26 | 2002-08-09 | Anelva Corp | ドライエッチング装置 |
JP4676074B2 (ja) * | 2001-02-15 | 2011-04-27 | 東京エレクトロン株式会社 | フォーカスリング及びプラズマ処理装置 |
US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
TWI234417B (en) * | 2001-07-10 | 2005-06-11 | Tokyo Electron Ltd | Plasma procesor and plasma processing method |
DE10143718A1 (de) * | 2001-08-31 | 2003-03-27 | Infineon Technologies Ag | Lagerungsvorrichtung für einen Wafer in einer Plasmaätzanlage |
US6887340B2 (en) * | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
US7658816B2 (en) | 2003-09-05 | 2010-02-09 | Tokyo Electron Limited | Focus ring and plasma processing apparatus |
TW200520632A (en) * | 2003-09-05 | 2005-06-16 | Tokyo Electron Ltd | Focus ring and plasma processing apparatus |
US7837825B2 (en) | 2005-06-13 | 2010-11-23 | Lam Research Corporation | Confined plasma with adjustable electrode area ratio |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US7358508B2 (en) * | 2005-11-10 | 2008-04-15 | Axcelis Technologies, Inc. | Ion implanter with contaminant collecting surface |
US8435379B2 (en) * | 2007-05-08 | 2013-05-07 | Applied Materials, Inc. | Substrate cleaning chamber and cleaning and conditioning methods |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US20150001180A1 (en) * | 2013-06-28 | 2015-01-01 | Applied Materials, Inc. | Process kit for edge critical dimension uniformity control |
CN105551925A (zh) * | 2015-12-08 | 2016-05-04 | 武汉华星光电技术有限公司 | 干刻蚀装置 |
JP7098273B2 (ja) * | 2016-03-04 | 2022-07-11 | アプライド マテリアルズ インコーポレイテッド | ユニバーサルプロセスキット |
JP7278160B2 (ja) * | 2019-07-01 | 2023-05-19 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
JP7365912B2 (ja) * | 2020-01-10 | 2023-10-20 | 東京エレクトロン株式会社 | エッジリング及び基板処理装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04333228A (ja) * | 1991-05-09 | 1992-11-20 | Mitsubishi Electric Corp | ドライエッチング装置 |
JPH0529270A (ja) * | 1991-07-23 | 1993-02-05 | Tokyo Electron Ltd | マグネトロンプラズマ処理装置 |
JP3260168B2 (ja) * | 1991-07-23 | 2002-02-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR100297358B1 (ko) * | 1991-07-23 | 2001-11-30 | 히가시 데쓰로 | 플라즈마에칭장치 |
JP3173693B2 (ja) * | 1993-10-04 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
US5529657A (en) * | 1993-10-04 | 1996-06-25 | Tokyo Electron Limited | Plasma processing apparatus |
US5573596A (en) * | 1994-01-28 | 1996-11-12 | Applied Materials, Inc. | Arc suppression in a plasma processing system |
JP3210207B2 (ja) * | 1994-04-20 | 2001-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH08339895A (ja) * | 1995-06-12 | 1996-12-24 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH09129612A (ja) * | 1995-10-26 | 1997-05-16 | Tokyo Electron Ltd | エッチングガス及びエッチング方法 |
US6113731A (en) * | 1997-01-02 | 2000-09-05 | Applied Materials, Inc. | Magnetically-enhanced plasma chamber with non-uniform magnetic field |
-
1998
- 1998-08-17 JP JP2000512233A patent/JP4602545B2/ja not_active Expired - Fee Related
- 1998-08-17 WO PCT/US1998/017042 patent/WO1999014788A1/fr active Search and Examination
- 1998-09-01 TW TW87114500A patent/TW401606B/zh active
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