JPS5656671A - Light-igniting reverse conductivity thyristor - Google Patents

Light-igniting reverse conductivity thyristor

Info

Publication number
JPS5656671A
JPS5656671A JP13332479A JP13332479A JPS5656671A JP S5656671 A JPS5656671 A JP S5656671A JP 13332479 A JP13332479 A JP 13332479A JP 13332479 A JP13332479 A JP 13332479A JP S5656671 A JPS5656671 A JP S5656671A
Authority
JP
Japan
Prior art keywords
layer
thyristor
region
less
igniting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13332479A
Other languages
Japanese (ja)
Inventor
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13332479A priority Critical patent/JPS5656671A/en
Publication of JPS5656671A publication Critical patent/JPS5656671A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a high resisting pressure and enlarge an effective conductive area by a method wherein a layer showing higher resistance out of the 1st and 2nd base layers in a diode region constituting a thyristor is made into a positive bevel form whose angle is 90 deg. or less. CONSTITUTION:On the 1st base layer 3 constituting the thyristor is provided the 2nd base layer 4 of high resistance and on the back surface of the layer 3 is formed diffusely the 1st emitter region 2, while on the surface of the layer 4 is formed the ringlike 2nd emitter region 5 diffusely with a hight-irradiated region 10 being opend. Next, in the end part of the layer 4 of high resistance, the positive bevel whose angle is set to be 90 deg. or less is formed, while a cathode electrode 7 is attached to the part from the surface of the region 5 over to the surface of the layer 4 surrounding the layer 5, and on the side of the back surface of the layer 3 a temperature-compensating body 9 is fixedly attached through the intermediary of a brazing material 8. Since the inclination at the angle of 90 deg.C or less is provided for the layer 4 in this way, the effective conductive area is not reduced and, in addition, no lowering of the resisting pressure is caused.
JP13332479A 1979-10-15 1979-10-15 Light-igniting reverse conductivity thyristor Pending JPS5656671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13332479A JPS5656671A (en) 1979-10-15 1979-10-15 Light-igniting reverse conductivity thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13332479A JPS5656671A (en) 1979-10-15 1979-10-15 Light-igniting reverse conductivity thyristor

Publications (1)

Publication Number Publication Date
JPS5656671A true JPS5656671A (en) 1981-05-18

Family

ID=15102036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13332479A Pending JPS5656671A (en) 1979-10-15 1979-10-15 Light-igniting reverse conductivity thyristor

Country Status (1)

Country Link
JP (1) JPS5656671A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201076A (en) * 1981-06-03 1982-12-09 Fuji Electric Corp Res & Dev Ltd Photo-arc thyristor
JPS58222572A (en) * 1982-06-19 1983-12-24 Mitsubishi Electric Corp Photo trigger thyristor
EP0098997A2 (en) * 1982-07-16 1984-01-25 Siemens Aktiengesellschaft Light-activatable thyristor having a low lighting power requirement

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201076A (en) * 1981-06-03 1982-12-09 Fuji Electric Corp Res & Dev Ltd Photo-arc thyristor
JPS58222572A (en) * 1982-06-19 1983-12-24 Mitsubishi Electric Corp Photo trigger thyristor
EP0098997A2 (en) * 1982-07-16 1984-01-25 Siemens Aktiengesellschaft Light-activatable thyristor having a low lighting power requirement

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