JP2001516948A5 - - Google Patents

Download PDF

Info

Publication number
JP2001516948A5
JP2001516948A5 JP2000512233A JP2000512233A JP2001516948A5 JP 2001516948 A5 JP2001516948 A5 JP 2001516948A5 JP 2000512233 A JP2000512233 A JP 2000512233A JP 2000512233 A JP2000512233 A JP 2000512233A JP 2001516948 A5 JP2001516948 A5 JP 2001516948A5
Authority
JP
Japan
Prior art keywords
shroud
dielectric
annular
workpiece
shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000512233A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001516948A (ja
JP4602545B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US1998/017042 external-priority patent/WO1999014788A1/en
Publication of JP2001516948A publication Critical patent/JP2001516948A/ja
Publication of JP2001516948A5 publication Critical patent/JP2001516948A5/ja
Application granted granted Critical
Publication of JP4602545B2 publication Critical patent/JP4602545B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000512233A 1997-09-16 1998-08-17 プラズマチャンバの半導体ワークピース用シュラウド Expired - Fee Related JP4602545B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US93186497A 1997-09-16 1997-09-16
US08/931,864 1997-09-16
PCT/US1998/017042 WO1999014788A1 (en) 1997-09-16 1998-08-17 Shield or ring surrounding semiconductor workpiece in plasma chamber

Publications (3)

Publication Number Publication Date
JP2001516948A JP2001516948A (ja) 2001-10-02
JP2001516948A5 true JP2001516948A5 (enExample) 2006-02-09
JP4602545B2 JP4602545B2 (ja) 2010-12-22

Family

ID=25461470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000512233A Expired - Fee Related JP4602545B2 (ja) 1997-09-16 1998-08-17 プラズマチャンバの半導体ワークピース用シュラウド

Country Status (3)

Country Link
JP (1) JP4602545B2 (enExample)
TW (1) TW401606B (enExample)
WO (1) WO1999014788A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6257168B1 (en) * 1999-06-30 2001-07-10 Lam Research Corporation Elevated stationary uniformity ring design
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US6489249B1 (en) * 2000-06-20 2002-12-03 Infineon Technologies Ag Elimination/reduction of black silicon in DT etch
JP2002222795A (ja) * 2001-01-26 2002-08-09 Anelva Corp ドライエッチング装置
JP4676074B2 (ja) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
DE10143718A1 (de) * 2001-08-31 2003-03-27 Infineon Technologies Ag Lagerungsvorrichtung für einen Wafer in einer Plasmaätzanlage
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
US7658816B2 (en) 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
US7837825B2 (en) 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7358508B2 (en) * 2005-11-10 2008-04-15 Axcelis Technologies, Inc. Ion implanter with contaminant collecting surface
US8435379B2 (en) * 2007-05-08 2013-05-07 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20150001180A1 (en) * 2013-06-28 2015-01-01 Applied Materials, Inc. Process kit for edge critical dimension uniformity control
CN105551925A (zh) * 2015-12-08 2016-05-04 武汉华星光电技术有限公司 干刻蚀装置
JP3210105U (ja) * 2016-03-04 2017-04-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ユニバーサルプロセスキット
JP7278160B2 (ja) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7365912B2 (ja) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 エッジリング及び基板処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04333228A (ja) * 1991-05-09 1992-11-20 Mitsubishi Electric Corp ドライエッチング装置
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
JP3260168B2 (ja) * 1991-07-23 2002-02-25 東京エレクトロン株式会社 プラズマ処理装置
JPH0529270A (ja) * 1991-07-23 1993-02-05 Tokyo Electron Ltd マグネトロンプラズマ処理装置
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
JP3173693B2 (ja) * 1993-10-04 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5573596A (en) * 1994-01-28 1996-11-12 Applied Materials, Inc. Arc suppression in a plasma processing system
JP3210207B2 (ja) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 プラズマ処理装置
JPH08339895A (ja) * 1995-06-12 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JPH09129612A (ja) * 1995-10-26 1997-05-16 Tokyo Electron Ltd エッチングガス及びエッチング方法
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field

Similar Documents

Publication Publication Date Title
JP2001516948A5 (enExample)
USD491963S1 (en) Inner wall shield for a process chamber for manufacturing semiconductors
JPH0167739U (enExample)
USD490450S1 (en) Exhaust ring for semiconductor equipment
EP0732728A3 (en) Plasma reactor and pedestal for supporting semiconductor substrate in a plasma reactor
JP2001527285A5 (enExample)
USD420022S (en) Electrostatic chuck with improved spacing and charge migration reduction mask
JPS644481A (en) Parallel-plate discharge electrode
JPS54105342A (en) Glow-discharge heating device
KR920007103A (ko) 플라스마 테이퍼 에칭 방법
JPS6413119U (enExample)
CN207019065U (zh) 一种火力集中的火盖
JPH0444961Y2 (enExample)
JPH05264046A (ja) ガスコンロマット
JPS6333626U (enExample)
KR200158940Y1 (ko) Fed 의 게터구조
JPS55113373A (en) Semiconductor device
JPS54108565A (en) Cathode structure for magnetron
JPS60108128A (ja) 縁付皿類の製造法
鐘兆玄 et al. Preliminary notes on Slime molds from the Matsu Islands
JPS61133558U (enExample)
JPS5721060A (en) Electrode for discharge lamp
JPS5586122A (en) Semiconductor device
JPS5742146A (en) Manufacture of semiconductor device
JPS57182939A (en) Manufacture of cathode structure