JP4602545B2 - プラズマチャンバの半導体ワークピース用シュラウド - Google Patents

プラズマチャンバの半導体ワークピース用シュラウド Download PDF

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Publication number
JP4602545B2
JP4602545B2 JP2000512233A JP2000512233A JP4602545B2 JP 4602545 B2 JP4602545 B2 JP 4602545B2 JP 2000512233 A JP2000512233 A JP 2000512233A JP 2000512233 A JP2000512233 A JP 2000512233A JP 4602545 B2 JP4602545 B2 JP 4602545B2
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Japan
Prior art keywords
dielectric
shroud
annular
workpiece
shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000512233A
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English (en)
Japanese (ja)
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JP2001516948A5 (enExample
JP2001516948A (ja
Inventor
クアン−ハン ケ，
ブライアン， ワイ． プ，
ホンチン シャン，
ジェイムズ ワン，
ヘンリー フォン，
ゾンギュ リ，
マイケル， ディ． ウェルチ，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2001516948A publication Critical patent/JP2001516948A/ja
Publication of JP2001516948A5 publication Critical patent/JP2001516948A5/ja
Application granted granted Critical
Publication of JP4602545B2 publication Critical patent/JP4602545B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2000512233A 1997-09-16 1998-08-17 プラズマチャンバの半導体ワークピース用シュラウド Expired - Fee Related JP4602545B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US93186497A 1997-09-16 1997-09-16
US08/931,864 1997-09-16
PCT/US1998/017042 WO1999014788A1 (en) 1997-09-16 1998-08-17 Shield or ring surrounding semiconductor workpiece in plasma chamber

Publications (3)

Publication Number Publication Date
JP2001516948A JP2001516948A (ja) 2001-10-02
JP2001516948A5 JP2001516948A5 (enExample) 2006-02-09
JP4602545B2 true JP4602545B2 (ja) 2010-12-22

Family

ID=25461470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000512233A Expired - Fee Related JP4602545B2 (ja) 1997-09-16 1998-08-17 プラズマチャンバの半導体ワークピース用シュラウド

Country Status (3)

Country Link
JP (1) JP4602545B2 (enExample)
TW (1) TW401606B (enExample)
WO (1) WO1999014788A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6257168B1 (en) * 1999-06-30 2001-07-10 Lam Research Corporation Elevated stationary uniformity ring design
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US6489249B1 (en) * 2000-06-20 2002-12-03 Infineon Technologies Ag Elimination/reduction of black silicon in DT etch
JP2002222795A (ja) * 2001-01-26 2002-08-09 Anelva Corp ドライエッチング装置
JP4676074B2 (ja) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
US6554954B2 (en) 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
DE10143718A1 (de) * 2001-08-31 2003-03-27 Infineon Technologies Ag Lagerungsvorrichtung für einen Wafer in einer Plasmaätzanlage
US6887340B2 (en) 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
US7658816B2 (en) 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
US7837825B2 (en) 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7358508B2 (en) * 2005-11-10 2008-04-15 Axcelis Technologies, Inc. Ion implanter with contaminant collecting surface
US8435379B2 (en) * 2007-05-08 2013-05-07 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20150001180A1 (en) * 2013-06-28 2015-01-01 Applied Materials, Inc. Process kit for edge critical dimension uniformity control
CN105551925A (zh) * 2015-12-08 2016-05-04 武汉华星光电技术有限公司 干刻蚀装置
JP3210105U (ja) * 2016-03-04 2017-04-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ユニバーサルプロセスキット
JP7278160B2 (ja) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7365912B2 (ja) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 エッジリング及び基板処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04333228A (ja) * 1991-05-09 1992-11-20 Mitsubishi Electric Corp ドライエッチング装置
JPH0529270A (ja) * 1991-07-23 1993-02-05 Tokyo Electron Ltd マグネトロンプラズマ処理装置
JP3260168B2 (ja) * 1991-07-23 2002-02-25 東京エレクトロン株式会社 プラズマ処理装置
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
JP3173693B2 (ja) * 1993-10-04 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
US5573596A (en) * 1994-01-28 1996-11-12 Applied Materials, Inc. Arc suppression in a plasma processing system
JP3210207B2 (ja) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 プラズマ処理装置
JPH08339895A (ja) * 1995-06-12 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JPH09129612A (ja) * 1995-10-26 1997-05-16 Tokyo Electron Ltd エッチングガス及びエッチング方法
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field

Also Published As

Publication number Publication date
TW401606B (en) 2000-08-11
JP2001516948A (ja) 2001-10-02
WO1999014788A1 (en) 1999-03-25

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