TW401606B - Shield or ring surrounding semiconductor workpiece in plasma chamber - Google Patents

Abstract

A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135 DEG C. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a forth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.

Description

B7 V. Description of the invention () Relevant information of the application: This patent application is "Apparatus for Improving Wafer and Chuck Edge Protection" applied to the US Patent and Trademark Office by Bryan Pu et al. On November 29, 1996. " Partial Renewal (cip) (its application number is SN08 / 758,531), and "Magnetically-Enhanced Plasma Chamber with Non-Uniform Magnetic Field" applied by Hongching Shan et al. On January 2, 1997 The content of the case (its application number is SN 0 8/7 3 5,444) is based. Field of the Invention: The present invention relates to an electrode in which a semiconductor workpiece is fixed in a plasma reaction chamber. More specifically, the present invention relates to a collar or ring surrounding a workpiece, and a semiconductor process can be performed in the reaction chamber. To provide more progressive spatial uniformity. Background of the Invention: Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ In various semiconductor processes, such as plasma_assisted etching or chemical vapor deposition, it is processed in a plasma reaction chamber with a workpiece 20 in it. It can be fixed on a metal electrode 22 (see Figure 1 and Figure 2). When the workpiece 20 is a round semiconductor wafer, its anode 22 usually has a round top surface to arrange the wafer. Generally, a process reagent mixture can be guided by a pump. Into the reaction chamber where the vacuum state is often maintained, and a power supply can excite the process reaction gas mixture into a plasma state. Basically, a radio frequency (rF) ______ page 5 This paper size applies the Chinese National Standard (CNS) Λ4 Regulations (210X 297 male '" ----- A7 B7 401606 V. Description of the invention (the power supply 24 will The capacitive reactance is connected to the electrode, from 22 '%, so that a negative bias state is generated at the electrode with respect to the plasma. Designing a plasma process reaction chamber-The goal is to enhance the electricity that can be operated in the reaction chamber. The reaction rate of the pulp process and the maximum value of the thousand · Γ side are the maximum. The reaction rate of the process will reduce any fraction of the f-beam from the plasma to the anode. Furthermore, the RF current can be collected and directed to the workpiece 20, which is generally People ^ Dare and s-the dielectric shield 28 will cover the side of the anode 22, and the shield 28 hurts 5γιθ, 8 series can be thick enough to cause the existence of RF current flowing between the electrical equipment and the anode side_ 乂 ^ In many conventional plasma reaction chambers, its anode has a diameter larger than that of the workpiece. For the purpose of RF current flowing between the power plant and the outside of the workpiece periphery, the anode part is used to change the volume by -Dielectric top shield or collar 30 to cover ' As the shield 28, the top shield must also be thick enough to reduce the resistance generated by the RF current flowing between the anode parts outside the periphery of the electric workpiece to a tiny level. However, the conventional dielectric shields 28 and 30 will exist. — '卞 Shi issue, that is, the process components used, especially in the plasma & τ < —Some chemical species printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, printed θrot & top shield The exposed surface is such that the top shield must be replaced periodically. In the reaction chamber, if the top screen "30" is lacking, its side shield 28 will also be exposed to the plasma, which will still be exposed to corrosion. Problem. It is very inconvenient to change the top shielding system from time to time, because "this means that the production line must be stopped when the reaction chamber stops operating. The corrosion of the dielectric and electrical shields is especially caused when the semiconductor workpiece is etching the dielectric layer θ , A is taken as serious, because at this time, the element etched the dielectric sleeve at the same time when the dielectric layer was etched. Page 6 This paper applies the Chinese National Standard (CNS) Λ4. (210 × 297 years of age) V. Description of the invention (A7 B7 Printed and designed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs-Semiconductor process electropolymerization reaction chamber Another goal is to achieve spatial uniformity covering the surface of the workpiece during the process, such as During the reactive ion etching process and the chemical vapor deposition process, the reaction rate (such as etching rate and deposition rate) of the Λ hole W mad γ in the center of the workpiece may be lower than that near the workpiece, because The reaction type of the center will have more losses than those close to the periphery of the workpiece, in other words, such a process will cause radial non-uniform damage. A conventional method can be used to improve the radial spatial uniformity. It mainly uses a tall cylindrical collar or shield to surround the periphery of the workpiece, sometimes called the focus ring. This elevated collar will produce at least three functions. The first two will basically reduce the response rate close to the wafer periphery. The first effect of the south frame collar or thick shield is to hinder the reaction process outside the collar from moving the reaction gas to its wafer ', so the collar will increase the consumption of reaction types near the periphery of the wafer to try to meet the requirements Consumption near the center of the wafer. The second function of the elevated collar is to replace the plasma protective layer on the periphery of the workpiece axially upwards. Moving the plasma protective layer from the periphery of the workpiece will reduce the type of reaction and concentrate close to the periphery of the workpiece. The third function of the elevated collar is to increase the reaction time close to the type of reaction around the wafer. In this way, the reaction rate near the wafer can be increased or decreased according to the chemical characteristics of the reactants used. The elevated collar or shield need not be a dielectric substance to achieve the above-mentioned effect. However, if the dielectric collar includes a dielectric substance, it can still perform the ion beam turning from the plasma to the periphery of the workpiece as previously described. The effect of the outer anode part. Conventional structural design, as shown in Figure 1. The paper on page 7 of this dielectric applies the Chinese National Standard (CNS) Λ4 specification (210X29? Public §). Please read the note page on the back to order A 7 --- -----— B7 V. Description of the invention () —-The collar 30 is axially extended to the surface of the wafer + 1 ^ + 叩, so that it can also have a high collar discussed in the previous inch And a dielectric shielding function. then

Although the conventional elevated collar can improve the spatial uniformity in the semiconductor manufacturing process, a more advanced method for improving the spatial uniformity will be given below. H Ai L. Purpose and summary: One aspect of the present invention is particularly used in oxygen Etching process and other high-plasma semiconductor processes, such as high-reaction processes using dielectric substances. In this purpose of the invention, the portion of the anode exposed to ionization and impact will be covered by a dielectric shield, and the shield will be covered by a protective ring of a non-dielectric substance. More preferably, the guard ring will be composed of a high-level non-reactive substance or anti-corrosive substance and a reactive gas. The erosion rate of such a guard ring will be lower than that of the dielectric substance below it, so the frequency that it must be replaced will be lower than that of the conventional dielectric shield. The reaction ring can also prevent the release of reaction species by interacting with reaction gases from unfavorable semiconductor processes. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs In addition, the reactive ring can be combined to form a substance that can react with the reactive gas by using a reactive gas instead of a non-reactive substance, and this method will not adversely affect the effect of the semiconductor process . In the oxygen etching process of silicon wafers, the dielectric shielding is preferably made of quartz, and the non-reactive protection ring is preferably made of silicon. The second aspect of the present invention is that the dielectric shield includes an axial comparison with _____, page 8 of this paper size, Chinese country) Λ4 specification (2Ι〇χ2 & ^) ----- --- 5. Description of the invention ( A7 B7 = Outer shield and-axially thinner inner shield and thicker dielectric shield provide a relatively low-profile edge. Child-cover the anode part with the outer shield ^ 4 strokes from the electricity flow to the supply-lower RF, with impact :: The thin inner dielectric shield will be able to edge the ions on the outer edge of the anode, because: the electric current flows just right around the workpiece. Therefore, the thin inner dielectric shield will extend its%. Perimeter, This will reduce any discontinuous areas close to the surrounding plasma coating. In the best case, the axial thickness of the internal dielectric decay will be uniform in the radial direction of the mosquito covering the workpiece through experiments: ... It can be applied in an alternative embodiment. 'With such a dielectric shield, the collar will cover at least part of the inner shield and extend radially to the workpiece < surface ° as it can extend to the surface of the workpiece 'So the non-dielectric collar will function as -f with an elevated frame or focus ring by The reaction gas is prevented from turning to the workpiece (the effect is 'therefore' the collar will increase the consumption of the type of reaction close to the periphery of the workpiece to draw closer and closer to the value of the consumption of the workpiece center. However, unlike the conventional design, in this embodiment of the invention, The thickness of the inner dielectric shield and the height of the non-dielectric collar can be independently adjusted to suit the radial uniformity of the plasma manufacturing process. A third aspect of the present invention is to provide a non-dielectric ring to surround and electrically In contact with the workpiece, such a non-dielectric ring can improve or reduce the spatial uniformity of the semiconductor process by reducing or avoiding the discontinuous area of the plasma cover around the workpiece. A fourth aspect of the present invention is that, due to a dielectric Electrical shielding and / or a change in the relative azimuth angle around the south collar of the workpiece holder to improve during the process. Page 9 This paper size applies the Chinese National Standard (CNS) Λ4 specification (2 丨 0X297 ^ 7 A7 B7 V. Description of the invention () One of the azimuth non-uniformities. The fifth aspect of the present invention is that, by having a worktable that can be compared, please read the precautions on the back first, and then increase it by 1 The ring axis of the 10 degree to 145 degree part surrounds the workpiece, and the periphery of the workpiece can be adjusted to minimize the corrosion part during the process. The diagram is briefly explained: Figure 1 is a cross-sectional schematic diagram of a conventional dielectric shield ring. Fig. 2 is a schematic longitudinal sectional view of a plasma reaction chamber of the present invention having a dielectric shield having a thick outer dielectric shield and a thin inner dielectric shield, and a non-dielectric ring shaft covering the inner shield. The figure is an enlarged schematic view of a part of the dielectric shield and the non-dielectric ring shaft as shown in Fig. 2. Fig. 4 is a schematic cross-sectional view of another embodiment of the present invention, and the radial dimensions of the dielectric shield and the non-dielectric ring are shown. Compared to the embodiment shown in Figure 3, it is the larger one. Figures 5 and 6 of the printout of the employee consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs are cross-sectional schematic diagrams of two other embodiments of the present invention, which further includes a second The non-dielectric collar has a height extending radially larger than the surface of the wafer, and the radial height of the second ring of the embodiment shown in FIG. 5 is larger than that of the embodiment shown in FIG. 6. Figure 7 is a schematic cross-sectional view of another embodiment of the present invention, which has a non-dielectric protective collar to cover all the lower and upper surfaces of the dielectric shield. FIG. 8A is a schematic cross-sectional view of an embodiment of the present invention, which has a spring that can push a non-dielectric ring toward the wafer to maintain its good electrical power. Page 10 This paper is sized to the Chinese National Standard (CNS) Specification of Λ4 (210X 297 male neodymium) A7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 4．5ieoa 5. Description of the invention Compared with the embodiment of FIG. 8A, there are more combinations to overcome the difficulty of non-dielectric rings. FIG. 9A is a partial perspective view of a conventional MERIE reaction chamber. FIG. 9B is a two-wire worker of the reaction chamber as shown in FIG. 9A. % Magnet top view. Figure 10A is an insult view of a wave collar of the present invention. Figures 10B to 10E are cross-sectional views of the wave-draw collar of the invention. Figure 11A and Figure 1 1B is an isometric view of a horse etched on the surface of an egg claw, as shown in the first nationalization-the dielectric collar shown in Figure 1 and the more advanced dielectric sleeve shown in Figure 4 in Figure 4. Description: 12 side wall 14 round bottom wall 16 cover 18 ground cathode 20 work piece 22 anode 23 exhaust vent Road 24 Radio Frequency (RF) Power Supply 26 Coupling Capacitor 28 Shield 30 Dielectric Shield 32 Elevated Surface 34 Arrow 3 6 Arrow 38 Internal Dielectric Shield 40 Plasma 42 Cover 50 Protective Ring 52 Electrostatic Chuck 56 Horizontal Ring 58 Second Non-dielectric ring 60 Non-dielectric ring page 11 This paper is in accordance with Chinese National Standards (CNS) Λ4 Regulations (210X297 male chelate V, 4〇160β Α7 Β7 Description of the invention) ^ ~ __ 64 Upper surface 66 lower part 68 Elastomer 76 Edge position Ί \ ~ • 74 Solenoid coil 78 Slot or cut 79 Robotic arm 81 High part 82 Low part 104 Exposed surface t Plastic details: • —The general plasma reaction chamber is shown in Figure 2. Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economics This invention can use one of the typical semiconductor reaction chambers. The reaction chamber is a magnetically enhanced plasma reaction chamber, which can be used in etching or chemical vapor deposition reactions. (CVD). The vacuum reaction system 1 includes a cylindrical side wall 12, a circular bottom wall 14, and a circular top wall or cover 16. A grounded cathode 18 is fixed to the bottom end of the cover 16. The effect of the pole is like a gas channel, which allows the reaction gas to pass through and enter the reaction g. The function i_t, and the side wall i 2 can be a dielectric or a metal substance. If it is a metal substance, it can also be As a part of the cathode, the semiconductor wafer or workpiece 20 / g · η ·, JL a 卞 is fixed on an anode 22, in other words, the MADI exhibition workpiece 20 which is set up in the reaction chamber is basically The anode 22 can be tightly abutted against the anode 22 through a clip or by a conventional chuck, such as a machine-spot-point furnace scraper 1 clip or an electrostatic clip ring (not shown). The main tool < upper surface. A vacuum pump (not shown) can exhaust the gas from the reaction chamber through the exhaust gas 2 3 to keep the total gas pressure in the reaction chamber at a level sufficient to form two μ .. Column% formation-the low pressure state of the plasma, Basically, the system is 10, ^ Ηί〇 ^^ High (please read the precautions on the back before filling in this page. J Φ fill in the book-page 12 This paper size is applicable to the Chinese National Standard (CNS) 401606 A7 V. Description of the invention () ~ ~ ~ ~ The levels can be applied to etching and CVD reactions, respectively. A radio frequency (RF) power supply 24 can be connected to the anode 22 'through a series of coupling capacitors 26, which should be powered by The device can provide RF voltage between the anode and the cathode 18, which can stimulate the gas in the reaction chamber to become a plasma state. The plasma has a positive positive voltage or voltage relative to the anode and the cathode, which can accelerate The ionized reaction gas hits the anode and the cathode. In order to maximize the type of reaction and the concentration of charged particles on the surface of the wafer 20, JL can be used to increase the reaction rate in the reaction chamber. Maximize it, so if possible The RF current flowing between the anode 22 and the anode 22 is concentrated to the wafer 20 reaction area on the front surface of the anode. Therefore, all front and side surfaces of the anode cannot be covered by the wafer ', but it is customary to use -thick dielectric. While being covered. Figure 2 shows a dielectric cylinder 28 to cover the side surface of the anode, and a dielectric screen 30 placed and covering the top surface of the anode on the periphery of the wafer 20. (Figure 2 shows that the dielectric shield 30 and the protective ring 50 are not conventional technologies, but will be described briefly after the present invention < ~ embodiment >) Printed by Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs 2. Protective ring to prevent corrosion of the dielectric shield Figures 2 and 3 show a protective ring or resist ring 50 spanning the radial interior of the dielectric shield 30 * 38, in other words, across the dielectric The inner portion reaches the periphery of the wafer 20. The dielectric shield or collar 30 and the protection ring 50 are constituted as a "process component", because any of them are obviously corroded, so they must be printed on paper. 、 Explanation of the invention (Increment and replacement of the India-Lebanese cycle by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs) When the wafers in the reaction chamber are continuously processed, the process components will be further corroded. The physical characteristics of the components of the process components will affect Plasma density and the distribution of reaction gas near the edge of the wafer, and its further corrosion will change the semiconductor process used in the reaction chamber. Therefore, when the process components are significantly corroded, its components must generally be replaced to maintain the reaction concentration and Uniformity. In the absence of a protective ring, one of the conventional dielectric shields 30 (as shown in Figure 丨), the exposed surface 104 of the dielectric is located just outside the periphery of the wafer 20, that is, the dielectric shield is the most The part that is about to be corroded. Since the thick dielectric 30 can prevent the electroforging from effectively extending to the periphery of the wafer, it can reduce the ion current that will cause corrosion and of course, it can also corrode The problem is reduced from the periphery of the wafer. According to the chemical nature of the materials used in the plasma reaction chamber process, using a corrosion protection ring 50 to cover the exposed inner surface of the dielectric shield 104 can also effectively reduce the corrosion of process components, Of course, its service life can also be extended. The inner dielectric shield 38 in the embodiment shown in FIG. 3 is thinner and wider in the radial direction than the conventional designer shown in FIG. The other object of the invention will be described in detail below. In short, the inner shield 38 is designed to be thin to achieve coupling of the rf power source to a certain amount between the anode 22 and the plasma 40, so it can also be radial The plasma is extended beyond the periphery of the workpiece 20. The one shown in FIG. 4 is another embodiment of the present invention, and the inner shield 38 is wider than the one shown in FIG. The plasma is further advanced radially outward. Since the internal dielectric shield 38 is thin enough in the two embodiments to couple a large amount of power between the anode and the plasma, it can remove substantial ions from the plasma Flow towards the inner dielectric shield, and the inner dielectric screen County (& S) Λ4 specifications, please read the note on the back 丨 Pei page book ring A7 R7 V. Description of the invention (any exposed part of the shield will also be corroded, the protection ring 50 is best to be covered with t '爻 corrosion. For prevention Such a rot part exposes the upper surface. The full-resistance ring 50 of the inner shield 38 of the dielectric thick shield 30 may include-an enhanced shield 38 within the plasma environment, which is particularly good for use in a reaction chamber. If the inner dielectric shield 38 The electrified substance is more resistant to corrosion. Therefore, its good substance will have two reactive gases and be susceptible to corrosion. 'Metal or semiconductor substances. Such as the resistance of non-dielectric substances, such as etching a workpiece 20 ^ ™ ^ ± ^ Cladding < In the enhanced plasma reaction, the reactor will continuously etch the material ^ A ^ J | tun material, of course, it also etched its dielectric shield 30, for example, including I The dielectric shield 30 of the inner part 38 of the thin plate is preferably used as a single medium of quartz. Quartz material has good low impurity concentration characteristics, which can prevent pollutants from entering and staying inside the reaction stem. Therefore, quartz material is a good material. If the name of the workpiece is etched, the oxidation property is similar to that of quartz material, so The engraving reaction will also corrode its etching shield. In addition, in a silicon oxide etching reaction chamber, its protective ring 50 will be more effective to protect the corrosion of process components. Β Printed by the Consumer Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs In the oxygen-oxygen silicon etching reaction chamber, the protection ring 50 is preferably composed of the secondary hair. Since silicon materials generally can achieve the anti-corrosion effect through the reaction process during the oxygen etching process, and because of the lower Impure concentration can achieve the effect of avoiding pollutants from staying in the reaction chamber, so the use of silicon materials is more advanced. The single crystal dream compound can be used better because it can achieve higher purity. Page 15 This paper size applies Chinese National Standard (CNS) Λ4 specification (210X297 public welfare)

401606 —______ 1 1 · 15. Description of the invention () In the test experiment of the present invention, the standard procedure is used to etch silicon crystals, especially silicon dioxide layers, on the test surface of the present invention. At least lower than the stone etching rate + w μ, At t 〇W silicon protection ring began to obtain a significant recessed surface due to corrosion, its% can also be easily replaced without replacing its dielectric shield3 〇. Advance-The life of the funeral ‘Dream s’ silicon ring can also be classified as g by the method of the invention; Js Λ and eight surfaces can be used for more than two times after being recessed. Conversely, if the inner shield 38 is like any other easy-to-use resist material, its guard ring 50 can also be saved <. For example, because a stone shield can be etched by the type of reaction used for metal silver engraving and precious metal engraving, its protective ring 50 is not so necessary in this reaction chamber. If the guard ring 50 is a non-dielectric substance such as a silicide, and if the wafer 20 and the anode 22 are insulated from each other (this is the same phenomenon as the wafer spanning between the anode and the wafer through a dielectric layer 52) The electrostatic sandwich is generally placed on the intestinal pole), and it generally helps the non-dielectric protective ring 50 to be electrically isolated from the adjacent surface of the anode 54. If the wafer system is insulated from the anode but not insulated from the non-dielectric ring, the non-dielectric ring can be connected to the anode and has a lower impedance than the wafer, which can cause too much The RF power can be coupled to the plasma through the silicon ring to replace the one that passes through the wafer. The insulating properties of the anode and the non-dielectric guard ring 50 may also be an oxide layer or other dielectric substance adjacent to the anode surface 54 of the guard ring. In a preferred embodiment, the anode is made of aluminum, and its oxide layer can pass through electricity. _____Page 16 This paper size applies Chinese National Standard (CNS) Λ4 specification (210X297 male age 401606 A7 B7 V. Invention Explanation () Obtained by plating the entire outer surface of the anode. In addition, a non-dielectric protection ring 50 can also be placed on the dielectric shield to maintain a gap between the protection ring and the anode. Such a vacuum gap will An insulation can be provided between the ring 50 and the anode. 3. The use of a guard ring to prevent changing the reactivity of the dielectric shielding. The guard ring 50 can extend the service life of the process components (as shown in Figures 2 to 4). Two examples are shown), which has a point of improvement. In some semiconductor processes, its dielectric shield 30 will interact with the reactive gas, or will be corroded due to the impact of ions, so that the chemical species will be Free and immediately change the reactivity of the process near the shield (that is, close to the periphery of the workpiece 20). If the reactivity (that is, the characteristics of various chemical types) is close to the periphery of the workpiece, and close to the workpiece If the person is different, the implementation of the processing process will be similar to that of relatively radial non-uniformity. If the protection ring 5 of the present invention is composed of a substance that can reduce the reaction gas response, or uses a different chemical species And with some substances that are beneficial (or reduce damage) in the process, they can also provide a more improved uniformity of the reaction space compared to the type of release by the non-protective dielectric shield 30. The Ministry of Economic Affairs, Central Bureau of the Ministry of Economy Industry and consumer cooperatives print "For example, when -quartz screen 130 is rotten, whether by splashing or by reacting with reactive gases, oxygen species will generally be released, and in some semiconductors, Quality will have a significant effect on its reaction rate. Indeed, in the etching of hydrocarbon reactions, such as photoresist planarization etching (photoresist planarization etching), increasing the concentration of its oxygen species will have It helps the reaction speed. And the Chinese paper standard (CNS) Λ4 specifications (210 × 297, 401606 A7 B7) are applied to each paper size on page 17 of the etching glass. 5. Description of the invention ((spln-on glass S0G) process can also get some smaller effects, because j SOG will basically have a component that is essentially carbon. In these etching processes, an exposure of the quartz shield 30 will increase the etching near the periphery of the wafer Rate, which can reduce the spatial uniformity of the etch rate. In some other embodiments, the oxygen species released by etching a quartz shield has some different effects in the etching reaction. The silicon dioxide layer's etching reaction can be designed to select as much of the exposed silicon material as possible for the purpose of etching. In the basic oxygen etching process, the oxygen material cannot help the silicon dioxide Etch effect, but it helps the etching of silicon material. Because — Qiying shielding 30 will basically reduce the selectivity of the etching process near the periphery of the wafer. In these embodiments, reducing the uniformity of the bite selectivity near the periphery of the wafer will be improved by covering the inner portion 38 of the quartz shield 30 with a guard ring 50, and the guard ring 50 includes a Remains of chemical species that may affect the etching reaction. According to the previous description, it is not necessary to cover the outer edge of the quartz shield 30 with a sigh ring. Since the ion current will gradually decline from the periphery of the workpiece, it will generally reduce the gap between the exposed surface of the quartz shield and the reactive gas. Response rate. Silicide is one of the best materials for manufacturing the protective ring 50 to achieve the aforesaid extension of the service life of the process components. Similarly, reagents can also be used to achieve good corrosion resistance. It is used to etch dielectric materials and metal materials, and is effective. Changes reduce its non-pure grade. Silicide also has an additional point of improvement 'is to provide fluorochemical reagents such as CF4 or CHF3, etc. can be provided on page 18 of this paper 掁 standard applicable Chinese National Standards (CNS) Λ4 specifications (210X 297 mm, please read the note at the back) Item Outfitting Consumer Work Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs printed oxygen 401606 A7 B7 V. Description of the Invention (Consumer cooperation of employees of the Central Standards Bureau of the Ministry of Economic Affairs printed better uniformity. Provides high concentration of gas ions in Dianyi Generally, the selectivity of the Russian reaction will be reduced. The rare substance will react with depletion (removal) of fluoride ions, so that dream compounds can be provided near the workpiece and the fluoride ion concentration of the adjacent workpiece can be reduced. For example, m-cut oxidation dreams In the process, the presence of a silicon bearing 50 can increase the etching selectivity of the photoresist etchant, in other words, it can reduce the etching rate of the photoresist. Figure 7 shows an implementation similar to that shown in Figure 4. Another design, except that the protective ring 50 covers a larger area of the exposed surface of the dielectric shield 30, and therefore the protective area of the dielectric shield 30 can be increased to prevent corrosion. The other thing is that its protection (50) will cover all dielectric shields (upper surface and all inward surface. Therefore, the design shown in Figure 17 will further obtain the function of the above protection (50), that is, It can be said that the service life of the remaining parts can be extended, and the spatial non-uniformity caused by the chemical interaction between the dielectric shield 30 & reaction gas in the semiconductor process can be reduced. The figures shown in Figures 5 and 6 are between Another design of the intermediate product in the embodiment of FIG. 4 and FIG. 7 'In this embodiment, the protection ring 50 covers the area of the shield. The age of the image is more than that in FIG. 4, but it is compared with that of FIG. 7. The embodiment shown in the figure is less. More specifically, the embodiment shown in the figure and FIG. 6: the concentration retention 50 includes a bottom ring% and an upper ring 58, wherein the latter part or all of them will cover the dielectric. According to the response of the inwardly elevated surface 32 of the shield 30, the design shown in Figures 5 and 6 will properly protect the "electric shield 30 from incineration corrosion, and therefore its reactivity can be changed. In addition to the design shown in Figure 7, the invention will be correct—by following This paper ruler ship Choi _ 210X297 public risotto) Please read the first surface of the CAUTIONS

Binding 40i6〇6 A7 B7 V. Description of the invention (engraved quartz dielectric ... &quot; Semiconductor that retains oxide to enhance its effect _ provides a more special point of progress in the process reaction. As mentioned above, so: reaction The process will include photoresist etchant plane etching and main glass etching reaction. Increasing the covered area of the quartz shield 3 () by the guard ring 50 will further-reduce the deposited oxide from the quartz, and In this way, the deposit near the periphery of the workpiece will have more etching rate increase than the center of the workpiece, so the spatial uniformity of the engraving rate on the surface of the workpiece can be reduced. In the best case, the 'protection ring' 5〇 胄 includes precious compounds, which have been described as described in W. H fluoride removal ions ^ using fluorine-containing reagents to engraved silicon oxide (in the reaction 'ϋ 7), because it will increase exposure to the electric public Silicon screen &amp; 50 surface 'and reduce the fluorine ion concentration of adjacent workpieces, so it can improve the selectivity of the etching reaction process. The staff of the Central Standards Bureau of the Ministry of Economic Affairs printed by the cooperative to increase the area of the exposed surface of the silicon shield. Lie in The effect of its effect on the silver-etching reaction will become very obvious, and its temperature sensitivity will also become very obvious. The temperature in the plasma reaction chamber-generally within the temperature range, 'increasing the temperature of the silicon shield will increase. Its reaction with gaseous material Therefore, the silicon shield will have a large surface area exposed to the plasma, so it becomes necessary to adjust the temperature of the rare shield to ensure its good response. 4. Comparison of the dielectric shield and the place close to the workpiece The low-impedance part is just like what was mentioned in the background of the present invention. As shown in the figure, the embodiment of the conventional dielectric screen &amp; 30 will perform two functions. First, the axial direction of the dielectric 4 shield will be Thin enough to be used on a paper scale suitable for use in China with a dielectric substance ^ iiTcNsTAi ^ i 'Page 20 (210X297 cm) B7 V. Description of the invention (coupling RF power source between anode 22 and plasma) It provides a high resistance, reducing the RF power source that is coupled to the periphery of the workpiece, which will increase the response rate of the process performed on the workpiece. The second 'dielectric screen &amp; 30 will be drawn to the surface extending beyond the workpiece 'So that by reducing access Radial uniformity of the reaction process can be improved by varying the concentration of the reaction species at the periphery of the workpiece and near the center of the workpiece. The present invention has discovered that the spatial uniformity of the process across the surface of the workpiece 20 can sometimes also be achieved by a transmission RF power is coupled from anode 22 to plasma 40 and can be provided around the wafer's annular area for further improvement. Such coupling can be accomplished through the provision of the dielectric shield 30 and an inner portion 38 The RF 4 impedance will be substantially lower than the surrounding part of the dielectric shield. The w power supply can be coupled between the anode 22 and the plasma through the relatively low impedance of the internal dielectric shield 38, which will cause plasma coverage. The object 42 can extend radially beyond the periphery of the workpiece 20. It can reduce any discontinuous part of the plasma coating near the periphery of the workpiece, and thus can increase the radial uniformity of the plasma used in the upper semiconducting process of the workpiece. The remaining part of the dielectric shield of the inner part 38 has a substantially higher resistance, so that the coupling area of the RF power source can be reduced away from the workpiece to a suitable position, and the process can be performed on the workpiece. . The RF power coupled to the outer periphery of the work periphery can also be achieved by increasing the thickness of the elevated collar 30 (that is, axially high and by using a dielectric substance with a lower dielectric constant). <Quartz Because it can become a relatively low impurity and reduce the retention of pollutants in the reaction chamber, it can be a dielectric substance suitable for the frame ring 30.

Printed by Shellfish Consumer Cooperation of the Central Bureau of Standards, Ministry of Economic Affairs

V. Description of the invention (A7 B7 The Central Standards Bureau of the Ministry of Economic Affairs and the Bayer Consumer Cooperative Co., Ltd. print out small and external shapes to mention some special semiconductor processes: ♦, = uniformity and circulation. As mentioned earlier in this section ' The RF t source will be coupled from the anode to the outer edge of the plasma through the wafer, which can reduce / concentrate the ions and reaction species on the surface of the sun. Therefore, all improvements in spatial homogeneity can be increased by increasing the connection. It can be achieved by the RF power supply with internal dielectric shield 38, and the average rate of such RF reduction in the wafer process: the additive will be able to resist consistent balancing. 4 cars (such as the flux), and take this Take the flat example and 1 *, as shown in FIG. 4, and a non-dielectric protection ring 50 of the _ to wide household dielectric inner shield 38, the width of two degrees W will be greater than the embodiment shown in FIG. 3 (in Figures 4 to 6 The two gods, "the heart is not easy to figure" does not show the anode κ 38 ^ 0% i 2〇 ^ τI embodiment shown in Figure 3). H, ^ ^ Extraction to further surpass the crystal cause: edge: can reduce the non-uniformity of the process space near the edge of the wafer, The embodiment designed in Figure 4 achieves better results. &Amp; Yu Di will be available as shown in Figure 3, and the invention measures the standard one gasification dream neodymium engraving process, which is one of the embodiments shown in Figure 3 and Figure 4, respectively. In the case of the radial width of the inner shield _ and the electric shield 38, respectively, (the dielectric inner shield thickness D of both is: to compare the etching rate and the etching rate. The measurement results are in H There is no obvious difference between the "Wth" and the "4th" embodiments, but the "Figure 4" embodiment predicted by the present invention has more RF power that can be turned away from the wafer through the internal dielectric shield 20 area, so its silver engraving rate will be slightly reduced. Therefore, at least for this special process [____ page 23 of this paper. Standard Play (CNS) ^ Grid (21QX2G ^ __ (&quot; first Read the notes on the back ^^, Γ page) Φ: ¾¾. Install · ， 一 = ° _k

• m. HI HI 401606 A7 B7 V. Description of the invention (printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs and printed on the 4th embodiment is better than the 3rd embodiment. The height of the 30th part of the process module will be more effective The shape is complex. In many structures, the "significant effect of the elevated part" is the "shadow" effect or the "depletion" effect. It is mainly used to block the reaction outside the collar. The process reaction gas moves to the wafer. Therefore, 'the depletion effect will increase the consumption of the reaction species near the periphery of the wafer to be closer to the consumption near the center of the wafer. Generally speaking, the increase is near the wafer. The consumption of reaction types at the periphery will reduce the reaction rate near the periphery. Second, the frame part will have a "confinement" effect or "residence time" effect, which can increase The residence time of the reaction types near the periphery of the wafer, whether it increases or decreases the reaction rate near the periphery of the wafer, is related to the chemical nature of the operation. Third, because the ionization M will be from the plasma The cover will accelerate downward and collide with the inner surface of the elevated part, and the bouncing particles (ricoehet) 36 generated by the collision will turn to the wafer (as shown in Figure 3), so the elevated part of the shield will Generates a "focusing" effect to increase the ion current near the periphery of the wafer. This focusing effect has a great relationship with the angle between the wafer surface and the surface of the elevated portion facing the wafer. It can be expected that If the angle is 135 degrees (vertical = 45 degrees), the maximum ion amount can be biased towards the wafer center. The fourth effect of the elevated collar is that the plasma cover can be moved radially downward toward the workpiece. Outside the periphery, the ion cover can be further moved from the periphery of the workpiece, and the concentration of the reaction species near the periphery of the workpiece can be reduced by this. The effect of the height radon on the reaction rate was discussed in the previous paragraph. Depletion, page 24. This paper size applies to the Chinese National Standard (CNS) Λ4 specification (210 × 297). (Please read the note t on the back first, and then click on this page} -Φ Pack.

， 1T inm 5. Description of the invention (A7 B7 Printing effect and dwell time of the central f I cooperative in the Ministry of Economic Affairs "will further affect other process response parameters, such as selectivity in the etching process or rapid coverage in a deposition process The present invention will use RF coupling to cross the periphery of the workpiece to individually adjust the height of the inter-frame shaft mounting 30, which can provide more options to make full use of its response parameters. (The depletion effect and dwell time effect will be as follows It can be explained in the text) With the increase of two degrees, the exhaustion effect, dwell time effect, 1 episode effect, and plasma replacement effect will become more significant. And these effects will also be located in the elevated part inward The influence of the radial space s between the surface 32 and the periphery of the wafer. The aggregation effect can be expected to obtain the maximum value at the center of the space s (which must be obtained by experiments). As for the other three effects, it will be due to the increase in space S. Cumulative decrease. The design of another embodiment is shown in FIG. 5, and the non-dielectric protection ring 50 may be formed by combining a horizontal ring 56 similar to the ring 50 in FIG. 4 and placed on the upper side. There is a second non-dielectric ring 58 which is higher than the surface of the wafer 20 and has an inner surface and an outer surface which is 45 degrees from the horizontal plane and similar to the inner surface 32 of the elevated shield 30. The elevated non-dielectric The electric ring "will provide a physical limitation of the reaction space near the edge of the wafer, and its type is the same as the inner surface of the elevated dielectric ring 30 shown in Fig. 3. However, compared with Fig. 3 The designed dielectric housing 30, the first _ A shown in Figure 5-a non-dielectric ring 58 will cause a relatively small ττ and resistance between the RF power anode 22 and the plasma, so it can protect the high level of RF Through the thin inner dielectric ring designed as shown in Figure 4 through the use of different height non-dielectric rings with different radial widths J page 25 This paper applies Chinese National Standards (CNS) Λ4 Grid (210 × 297 public inspection) (please read the precautions on the back before ^ T this page) • φ (reloading and ordering line Α7 Β7 5. Description of the invention ( ) ~ 58, the space S can also independently change the width of the internal dielectric shield 38, so an additional design parameter can be provided to make full use of the semiconductor manufacturing process. Spatial uniformity. Figure 6 shows an embodiment different from that shown in Figure 5. In this embodiment, 'the axial height of its second non-dielectric ring 58 will be only one and a half of the elevated collar 30' Therefore, a physical limit of only half the amount of reaction space is also provided near the edge of the wafer. The second non-dielectric ring 58 as shown in Figures 5 and 6 will overlap the inner surface of the dielectric high collar 30 "32" is used to provide a gradual conversion of the resistance and acts as a radial arrangement, so that the plasma uniformity near the edge of the wafer can be achieved. Of course, the spatial uniformity of the semiconductor process can also be achieved. To reduce any discontinuities in the plasma cover, the radially outer portion of the second non-dielectric ring 5 8 will gradually shrink, and the gradually reduced thickness will overlap the inner portion 32 of the dielectric high collar 30, so Can provide its electronic characteristics from the silicon ring to the elevated collar. Other factors affecting the ideal impedance of the dielectric inner shield 38 are used in the reaction chamber to clamp the wafer 20 on the electrostatic chuck 52 of the anode 22 (as shown in Figure 3). If a dielectric is inserted in the electrostatic chuck on The anode and wafer of the Central Bureau of Standards of the Ministry of Economic Affairs of the January Industrial and Commercial Cooperative Cooperative Printing Room 'This is to insert a capacitive reactance between the anode and the plasma. In order to maintain a balance between the RF power coupled through the wafer and the power coupled through the thin inner dielectric ring 38, the impedance of the internal dielectric shield will gradually increase the proportion of the RF impedance of the electrostatic chuck. The impedance of the dielectric shield 38 will be proportional to its axial thickness D and separated by its radial width w, and inversely proportional to its dielectric constant. This paper size applies to China ’s SiYcNs 丨 printed by the Central Standards Bureau of the Ministry of Economic Affairs of the Consumer Standards Cooperative, printed by 401606, invention description () Because the resistance of the protection ring 50 will be much lower ^ resistance, the present invention predicts the axial production of the protection ring The thickness (the thickness of the RF power source connected between the anode and the electrical equipment) has a substantial &lt; effect on the wheel π θ, so the ion current split on the Yang Yuan has no real meaning ^. Private &lt; Political Fruit. In fact, the 'ring will have sufficient thickness to prevent online manipulation. It may be accidentally known as damage from the board, and of course, a sufficient thickness of the protection and the protection of the mounting can also resist the degree of substitution and corrosion. Narrow Example: A conventional dielectric shield 30 shown in Fig. 1 is compared with the present invention, as shown in Fig. 4, which includes a guard ring 50 and a modified dielectric shield 30 having a thin portion 38. This embodiment mainly uses a process of etching a silicon dioxide layer from a silicon wafer having a diameter of 200 mm in a magnetic plasma reaction chamber, as shown in FIGS. 9A and 9B. A DC power supply can provide 4 amps of power to two adjacent electromagnetic coils 71 and 74, so that its magnetic field can cover the center of the wafer about 30G, and the other two coils 72 73 will not be able to receive power. The reaction gas flow in this process will be composed of seemingly CHF3, 15 seemingly CH4, and 150 seemingly Ar, and the pressure and force of the reaction chamber will be 200 mT. The RF power supply will provide 1000 watts of 13.56 MHz power to the anode 22, and each crystal will be etched for 60 seconds. This will etch two to four thousand four hundred and four hundred angstroms of emulsified dreams on the wafer surface. As shown in Figure 11A and Figure 11B, a 45-in-24 circle will be used in the installation of an interference meter. Page 27 This paper applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 401606 5 2. Description of the invention (A7 B7 is an isometric curve diagram showing different thicknesses on the wafer surface due to different etching thicknesses. The provincial curve represents the average rate, and the plus and minus signs are greater than or equal to Areas smaller than the average rate, and each room represents an increase in angstroms per minute (A / min). Changqu 4 The figure shown in Figure UA is a conventional result as shown in Figure i. It is located in the crystal The distance between the thickness or depth below the round edge is about 15 mm. The height of the shield from the outer edge of the wafer is about 15 mm. The figure nB shows the results of the embodiment of the present invention as shown in figure *. The improved dielectric shield 30 has a thin inner portion 3 with a radial width w of 14 mm and a thickness or depth D of 4 mm. Compared to the conventional design shown in FIG. 1, FIG. The dielectric shielding shown below will reduce the average deviation of the maximum and minimum rates. Negative deviation will be reduced from · 106〇A / min to · 85〇A / min, = Worst positive deviation will be reduced from + 125〇A / min. To + 〇〇〇〇A / min. 5. · 介 介The electric ring is connected to the Central Consumers Bureau of the Ministry of Wafer Economics, printed in Figure 8A and 8B, which is a schematic diagram of another embodiment of the process assembly for semiconductor workpiece circle 20 of the present invention. Connected around the non-dielectric rings 50 and 60; to ensure good electrical connectivity, the process assembly includes a spring or elastomer to maintain a uniform pressure between the wafer 20 and the non-dielectric ring 60. Figure 8A And in the embodiment shown in FIG. 8B, the elastic system is a 10-shaped ring, which has a fixed lower portion 66 and a movable and elastic lip seal 68 to maintain its upward pressure and abut. For the non-dielectric ring 50 or 60, and therefore the non-dielectric ring is tightly pressed against the crystal ___ page 28 This paper size applies the Chinese National Standard (CNS) Λ4 specification (210X297 male age) 401lQ〇6, Description of the Invention (Printed in Figure 8A by the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs, its non-intermediate. Yi 50 will be the same as the flute, those who — 'But the dielectric shield 30 in Fig. 3 is replaced by the design M and 68 in Fig. 8. In Fig. 8B, ** is 38, which will be replaced by the elastomer η. &Lt; · 1 In the embodiment, the long non-dielectric ring 60 It will be described in detail below. The special figures 8A and 8B used by Dan are shown in the following examples. Since Gandian is connected to the wafer, it is a non-dielectric mine, and its non-dielectric ring-type electric clothing. The effect will be extended into a head 'and thus become the + secret of the anode 22. It is the electrical &lt; electrical extension of the wafer. Because _ does not need the dielectric inner shield 38 to cover the current design points. The bottom and bottom of the ring are to cover the edge of the wafer 20 with plasma, A continuity is the most son-in-law, not; the composition of the I ring 50 or 60 is preferably the material of the terrestrial phase R on the wafer base. Negative ', especially if the workpiece 2 0 stop A is on the θ plane, θ system 4 circle 1 non-dielectric ring is better to dream. In the designs of Figures 8A and 8B, the coupling is through the silicon ring 50 or 60 RF power will be proportional to its radial width w, and through the silicon ring or 60 to extend to the workpiece 20 Outside the periphery, in addition, the rf power is also inversely proportional to the resistance of the silicon ring. Compared to the embodiment shown in Figs. 3 to 7, its power supply will be proportional to the width W of the internal dielectric shield 38. In order to prevent the elastic rings 66 and 68 from moving out of position when the wafer 20 moves, the fixed lower part of the elastic ring 66 is preferably appropriately placed between the dielectric shield $ 0 and the anode 20 because the silicon ring 50 or 60 It can move up and down freely, so it is best to have the same gap between the silicon ring and the dielectric shield 30. The gap is preferably small enough to prevent the plasma from penetrating through the gap and spreading to the elastic body 68. The electrostatic chuck first Read the notes on the back of the book. I order the turtle page 29 This paper size is suitable for wealth and family (CNS) Λ warm grid (21GX297 public magic A7 B7 V. Description of the invention (2 edges and the inside of the wafer 20. As you know The width of the covering will become strict and the gap is smaller than the plasma, and it will become a part that reflects pressure and other factors. ^ Ge · Jin In the case of the lack of downward force on the wafer 20, the bomb: will push Zhenhuan 6. It is upward and higher than the top surface of the electrostatic tray 52. Because ': When a wafer 20 is placed in the electrostatic chuck w for the first time into the reaction chamber, it is placed on a high silicon wafer 6 〇The situation will be higher than the tray. If there is a gap between the bottom surface of the wafer and the top surface of the tray If the seam is too large, it will not generate enough electrostatic force on the wafer to overcome the elastic force of the spring ... 8, and it will not be able to clamp the wafer against the top surface of the chuck. In order to prevent 68 from extending upwards with a limit to the limit, the 6G and wafer 2 () to be lifted up before the electro-inflammatory disk is turned on—a small limit f 'If the elastic system has a weaker elastic coefficient or an electrostatic refresh disk, Strong, the maximum allowable height of the non-clamped wafer will become larger. In the embodiment of the present invention, it is estimated that the height of the non-clamped wafer is higher than about 0.003 on the electrostatic chuck 52. Inch to 0. 0 inches (0.08mm to 0.25mm). However, when the reaction chamber is in a vacuum state, the height of the wafer is difficult to measure. Central Bureau of Standards, Ministry of Economic Affairs Conversely, the consumer cooperative prints. If the wafer can be clamped to the anode by a mechanical fixture, the effect is better than that of an electrostatic chuck. It is not necessary to limit the number of dream rings that are raised by the elastomer. If wafer 20 is electrically insulated from the anode, it will become as if the wafer can be There is a special case where the electrostatic chuck of the dielectric lip 52 is fixed to the anode, so that the silicon ring 50 or 60 will make the anode electrically insulating. Page 30 This paper standard Itaiguan family standard (CNS) Α4 ^ Τ2ι 〇χ297 ^^ A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of invention. If the anode is aluminide, the subsequent electrical insulation characteristics can be supplied by anodizing on the anode surface. If the wafer is insulated from the anode but not insulated from the dream ring, the impedance passed by the anode to the anode will be lower than the impedance of the wafer. As a result, too much RF power will be diverted to pass through the silicon. Ring instead of wafer. The nozzle test of the present invention compares the different plasma etching reaction chamber embodiments shown in FIG. 3 and FIG. 8A. During the reaction process of etching a silicon dioxide film on a silicon wafer, in the embodiment shown in FIG. 8A, the etching is performed. The good spatial uniformity of the rate will be 30% better than that shown in Figure 3. Fig. 8B shows an embodiment having a non-dielectric ring 60, and its appearance is more complicated than the embodiment of the simple ring-shaped non-dielectric ring 50 shown in Fig. 8A. The embodiment shown in FIG. 8B also has the following features: 丄 s 丨 丨 Shi 丄 + t 1 The special function is that the silicon ring 60 has a stepped upward surface. More specifically, the convex upward surface 64 of the jewel ring 60 is located at the outer periphery of the wafer 20, and the silicon ring portion 6 may have a slightly convex «upward surface» relative to a silicon ring portion 6 on the bottom side of the wafer. The elevation of the protrusion to the upper surface 64 is sufficient to be in a surface state with the upper surface of the wafer, so that the discontinuous area of the plasma cover adjacent to the periphery of the wafer can be reduced to a minimum state. Therefore, it can be obtained that— Better inter-process uniformity for wafer processes. In order to further reduce the discontinuous area of the plasma cover, the outer portion 64 of the silicon ring can be designed to gradually reduce the thickness of A ^ to overlap with the inner portion 30 of the high collar 30 of the dielectric frame. The silicon ring is gradually converted into an elevated collar. (Please read the notes on the back before this page)

1T gland-page 31 This paper scale applies to China National Standards (CNS) A4C grid (210X297 male round 401606 A7 B7) V. Description of the invention (in the test of the invention, the surname obtained in the embodiment shown in Figure 8B Moment: The uniformity of time is not found to be better than the designer in Figure 8A, because the clothing is not easy to use # '制造' JL _; 翻转 can be turned over and used to extend its service life when it begins to be corroded. The actual use is still more commonly used in the design of Figure 8A. 6. The spatial orientation change of the collar or dielectric shield enhances the spatial uniformity of the plasma semiconductor process. The process may reflect the mechanical arrangement of the component or the asymmetry or asymmetry of the shape. Damage is harmed by uniformity. More specifically, if the workpiece is a circular semiconductor wafer, and if the components of the process reaction chamber are not cylindrically symmetrical with respect to the axial direction of the wafer, the process reaction will It has non-uniformity of azimuth angle. Another object of the present invention is to make the non-uniformity of these azimuth angles possible by mounting a high collar and / or a dielectric shielding related space orientation around the workpiece. Give The changes are made up. Figures 9A and 9B printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economics are a schematic diagram of a conventional process reaction chamber with two cylindrical asymmetric sources. These reaction chambers are amplified magnetic reaction ions. Etching (MERIE) reaction chamber, the technical characteristics of which can be found in the patent specification of US Patent No. 5,534,1 08 obtained by Qian and other co-inventors. The reaction chamber wall 12 has a cylindrical inner surface and An external surface 'and its cross section is octagonal, and four electromagnetic coils 71, 72, 73, and 74 are arranged around the wall of the reaction chamber, and are fixed on the octagonal external surface in a spaced manner. The power supply (not shown) can provide power to four electromagnetic coils to generate a magnetic field, and the magnetic field will be parallel to page 32. This paper standard applies to China National Standard (CNS) 8-4 specifications (2 丨 OX297) 5. Description of the invention (A7 137 The surface of the printed wafer printed by the staff consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs is slowly rotating the wafer relative to the φ centerline of the wafer. (Shown in Figure 9A) A wafer 20 ′ is not fixed on the anode top surface μ and basically the plane of the wafer will form ν _ (the phase is prepared on the plane of the top surface of the anode 22). By driving the orthogonality of the electromagnetic force, poem κ, — The effect of slow rotation can be achieved, in other words, 'is to supply a low surface-, the forward spin current to the four magnetic coils, the forward spin current provides the first, three, and three coins 71 , 73 are 90 &lt; inverse phase with respect to the second and fourth coils 72'7 provided. The reason for the rotating magnetic field is to obtain the largest azimuth symmetry when performing the touch-etching process on the wafer.蚨 品 # f is hot, as mentioned in the Qian patent, due to the average magnetic field near the centerline of each lightning magnetic field ^ a, ^ ^ ^ ^% (such as at 0, 90. , 180〇, and 270. Tang 'times 270 万 million) will be lower than the average magnetic field near position 76 near the edge of the electromagnetic coil (such as at 45 °, ur, 225 °, and 315. etc.), so female p, this recognition a &quot; The non-uniformity of thousands of thousands will still be maintained. Therefore, the process response rate near the periphery of the wafer (that is, the azimuth position at a multiple of 90) will be lower than 45. Odd multiple process position response rate. The reason why the reaction chamber has another azimuth asymmetry as shown in FIG. 9A is due to a reaction chamber gap or cutout 78 designed to allow a robot arm 79 carrying a wafer 20 to enter and exit the reaction chamber. We have found that because the reagent gas capacity of the process reaction gas added for the chemical reaction on the wafer's active area can be effectively increased by filling the process reaction gas capacity into the cutout, the cutout 78 can also be changed near the cutout. (In other words, it is close to the 90 ° azimuth position of the reaction chamber). For example, in the process of etching a silicon nitride dielectric layer on a wafer, page 33. The paper size is applicable to the Chinese National Standards (CNS) Λ4 specification (210X297 cm). Please read the precautions below and pay a fee.% A7 B7 V. Description of the invention (The mixture of ⑽3 and 44 used will be regarded as-tinctures, and will be available at the cutouts around the wafer (equal to 9 "彳")-very high us It is thought that such azimuthal non-uniformity will fill a lot of valleys of gas ions to etch the dielectric layer at those positions 76. In the present invention, the non-uniform non-uniformity of orientation can also be surrounded by The azimuth shape of the elevated cover of the semiconductor wafer or the workpiece, or the collar and / or the dielectric inner shield 38 is changed to improve the orientation of the reaction chamber due to the asymmetry of the reaction chamber. In particular, the dielectric inner shield 38 can be modified by its thickness or internal reflection: ruler's size, or by changing the height or diameter of the elevated collar 30a as an improvement in orientation. For example , In the heart chart to 帛 10E, it shows A curling (Sat30 cover 3G ring embodiment diagram of the embodiment, in this embodiment can change the height of the tens of thousands. The height of the ring 30a can make up for the second:.,. 71-74 are close to each The electromagnetic field force generated at the center line of the electromagnetic line is smaller than the shortcomings printed by the Shell Standard Consumer Cooperative of the Ministry of Electromagnetic Economics produced near the edge of the electromagnetic opera &amp;# 〜 州 巩 磁 涑 圈圈 76. More specifically, the curled shaft The ring ... at ⑽. (Shi 20). Multiples:: has a Nan Shaofen 81 at the position, and at 45. (± 20.) Odd multiples: = ... at the azimuth. In the preferred embodiment of the present invention The middle and high part 82 (the same degree is 9mm and 5mm respectively, the curled collar _ is at m0. There is-flat consumption 84, which can be matched with the anode 2: corresponding flat part, so that the orientation of the collar can be obtained We compare the curled light ring 3Ga and 3G with a uniform height. All tests are made as shown in Figure 9AW and Figure 9B. Page 34 This paper is based on the standard 剌 t standard (401Θ06 V. Description of the invention () ~ — '— Displayed in the MERIE reaction chamber and has four electromagnetic wires To achieve the orthogonal effect, each test workpiece 20 is a silicon wafer with a diameter of -200mm, which can be located on a silicon dioxide layer that can be deposited by a conventional thermal chemical vapor deposition process, regardless of Both the conventional collar and the coiled collar have a size of 203mm, and the test mainly measures the spatial uniformity obtained in the etching of the oxide layer. The environment of the etching process is 50SCCm of CHF3, i. The CF4 of sccm, the Ar of 15 sccm, and the 25mTon reflect the krypton pressure, the RF power of 1000 watts, and the magnetic field strength of 50 Gauss. In one test, the etching rate of the sample samples was evenly distributed at 225 points. On the wafer surface, the test result is that the conventional one-sigma spatial uniformity of the etching rate is 21%, and that of the coiled collar of the present invention is 1.5%, and the improvement is 28%. . In another set of tests, the sampling etch rate of the etch was 17 points at different positions close to the periphery of the wafer. The test result is that for conventional collars, the spatial uniformity of the etch rate is 8.2%, and The winding collar of the present invention is 4.3%, and the improvement is 47%. For the customary collar 30, the space non-uniformity will be so high for the conventional collar 30 of the Ministry of Economic Affairs, which is mainly because the etching rate is relatively low in multiples of 90 », and its magnetic field is relatively low. Weak, and the coiled collar 30a of the present invention can improve the spatial uniformity of the etching rate, because the height is 90. The multiples are the highest in azimuth, so the etch rate of the weakest areas of these magnetic fields can be increased. According to the present invention, it is believed that the increase in the etching rate at the highest position of the coiled collar 30a is due to the accumulation effect of the inner surface 32 of the elevated collar, so that the diffused charged particles 36 can be directed to the wafer 20, as shown in FIG. Therefore, the present invention is convinced that if the inner surface 32 can be formed ___ page 35 this paper size is suitable for wealth _ home standard (CNS ------ printed by the Consumers Cooperative of the Central Standards Bureau of the Five Ministry of Economic Affairs A7 B7 invention description (and workpiece The plane is close to 135. In its state, its shaking, ~ 81 can be obtained based on the highest engraving rate of the highest part of the curled collar, as shown in Figure 3, and this will be described in more detail below. In some semiconductor processes, increasing the height of the collar may also have the opposite effect of the dioxo button engraving process described above. More specifically, increasing the width of the shaft may also reduce its process response rate due to the two processes described below: -It is to prevent the reaction gas from moving from the outer area of the inner diameter of the collar to the workpiece (that is, the shadow effect or depletion effect), and the second is to push the plasma to rise axially away from the workpiece. Furthermore, increasing the height of the collar means increasing As mentioned earlier, the dwell time effect may also increase or decrease the process response rate due to the difference in the process. Therefore, when the curling ring is to be applied to a new process, its measurement is to be measured by shoulder to shoulder. The number of process response rates around the periphery of the workpiece (depending on the engraving rate or deposition rate of its process name) to determine whether to increase or decrease the process response rate adjacent to the high portion 81 (or low portion 82) of the coiled ring. In the I process, For example, in the silicon dioxide etching process, the aggregation effect will be better than the confinement effect, and it is believed that the confinement effect will gradually become significant if the height of the collar is further increased. More specifically, the present invention expects the right axis to When the degree is increased to a center point, the process response rate reduced / contained by the confinement effect will exceed the process response rate increased by the aggregation effect. Furthermore, the present invention is convinced that the previously discussed increase of the buckle response near the incision 78 The resolution method can also be used to solve the problem of elevated collars. The problem is that the height of the elevated collars adjacent to the incision is so high that the elevated collars can prevent the reagent from moving between the incision and the workpiece. The way to provide azimuth changes at elevated collar heights is on page 36 of this paper ruler (CNS)

A7 I --___ B7________ V. Description of the invention ()-The inner diameter of the elevated part of a collar provides orientation change, in other words, changing the size of the gap between the periphery of the workpiece 20 and the inner surface of the elevated part 3 of the collar 'reduces its The inner diameter (that is, reducing the gap size) will generally change the process response rate in the same way as increasing the collar height. There is another way to compensate for the azimuth change in the process response rate ', which is mainly to provide a corresponding azimuth change in the axial thickness D or radial width on a dielectric inner shield 38 surrounding the periphery of the workpiece. If you want to try to reduce the response rate in the direction of response S: non-uniformity or asymmetry, the dielectric inner shield 38 will be thinner or wider so that more RF power can be lightly connected to the anode 22 from the anode 22 In the pulp. Conversely, if one tries to increase the response rate in the non-uniform or asymmetric orientation of the reaction chamber, the dielectric inner shield 38 will be thicker or narrower so that less RF can be coupled from the anode 22 Power into the plasma. The increased RF power supply can be coupled through the thin portion of the dielectric inner shield 38 to increase the density of the plasma at the azimuth position 'and therefore increase its corresponding response rate at the azimuth position. Therefore, the azimuth non-uniformity in the process response rate or other process variables will be controlled by the manufacture of the dielectric inner shield 38, so that the effect of compensating for the azimuth change can be produced. Printed by the Central Bureau of Standards of the Ministry of Economics and Industry of China, such as' The process reaction chamber shown in Figure 9A can also be manufactured because the notch 7 8 provides a larger reagent capacity space adjacent to the 20 area of the wafer— The azimuthal non-uniformity can increase the response rate of these wafers. The non-uniformity can also be improved by surrounding the wafer periphery with a ring-shaped dielectric inner shield. The thickness of the ring-shaped inner dielectric shield 38 near the cutout 78 will be greater than that at other azimuth locations. -___ Page 37 This paper size is applicable to China National Standards (CNS) 8-4 specifications (210X297 mm) ----- ~ -------- Printed by the Staff Consumer Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs

A7 B7 V. Description of the invention (degrees, so that the ion (as shown by arrow 34 in Figure 3) will hit and the inner surface 32, so that the charged ions (as shown by arrow 36) can be laterally expanded to the wafer At the center axis, the downward diffusion situation is also better than that in the figure! The collar 30 is better. The inner surface 32 is more obvious in vertical arrangement. Therefore, the diffusion ions of the present invention can be distributed more on the wafer surface. For a wide area, the gathering situation at the edge of the wafer is also better than that of the conventional dielectric collar. More advanced is that, as mentioned above, the placement of the angle will reduce the part of the process component near the edge of the workpiece 20 Corrosion situation. For example, the part of the process component that reduces corrosion &amp; may be as shown in the following figure: The non-dielectric ring 50 ′ of the embodiment and the non-dielectric of the embodiment shown in FIG. B Ring 60. Furthermore, because the placement of the angle will make too much of the ion density close to the periphery of the workpiece, it can also improve the "non-uniformity" of the plasma process. Printed by the Zhengong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Relative to the wafer surface is 135 °. It is obtained in order to obtain the maximum value of the horizontal diffusion of charged particles-ideal condition, but in order to maximize the space uniformity of the plasma process, the angle can be chosen according to the actual situation. More specifically = when the gap between the periphery of the wafer and the inner surface 32 of the mask is small, a large vertical angle can also be selected (in other words, close to 9 (r is as shown in Figures 5 and 7) As shown, the exposed inward surface of the elevated collar facing the workpiece 20 may also be a non-dielectric ring 50, which is better than using a dielectric shield 30. In order to make the #dielectric ring adjacent to the edge of the workpiece 20 56 (= 5 pictures) or 50 (picture 7) of the exposed part of the corrosion can be reduced to a minimum, the non-dielectric ring inward facing surface 59 preferably also has the same as previously described-as opposed to the 39th page of the paper The dimensions are in accordance with Chinese National Standards (CNS) specifications (210 × 297ϋ 401608 A7 B7) 5. Description of the invention (the angle of the surface of the piece. As shown in Figure 6, the exposed inward facing surface of the elevated collar or cover may also include a high medium Exposed surface η and -non-dielectric 50。 Exposed surface 59. In this embodiment, the two exposed inwardly facing surfaces 32, 59 may preferably also have the angle as described above. 8. Other references in the specification & application patent park , Such as &quot; higher &quot;, &quot; lower &quot;, &quot; upper side |, &quot; and &quot; bottom side &quot; mean only the position of these parts relative to other components, not these The relative position with respect to gravity and the direction of the earth ’s gravity are not relevant to the present invention. For example, in the design embodiment described, it may also be reversed to face down the semiconductor wafer process. The "higher areas |" and "lower areas" described in the Ming Ming Book and the Chinese Patent Application, but in fact, they are "downward" and "upward" directions with the gravity of the earth, respectively. . When the first component circled around or around the periphery of the second component stated in the present invention, 'if the outer part of the dielectric shield surrounds the periphery of the protective ring, or when the outer part of the ring surrounds the periphery of the workpiece, there must be no meaning The two components of the economy, the Central Bureau of Standards, Shellfish Consumer Cooperatives, are co-planar. For example, the present invention described in FIG. 3 describes that the outer part of the Baoxiong ring 50 is fixed around the periphery of the wafer 20, and the protection ring is located at: circle <under the plane, and further, the present invention does not mean the so-called The meaning around the system is circular. When the present invention defines a circle or a circle, it is more inclined to mean that the radial position of the first member, including the outer part, is located at the outer edge of the second member or beyond. The second method of custom cutting and cutting is that the paper size (210X297-male) 4〇16〇6. Description of the invention (ΜΒ7) When the second component is essentially on the west of the two-dimensional table, the first component The outer part, the protruding surface of the blade, is the protruding part of the second member that surrounds the periphery of the second member. The method of winding or surrounding the cousin is that when the second member has an axis of symmetry, the protruding part of the outer part of the first member has -The surface is flat 2. The axis of symmetry surrounds the top surface of the protruding part around the periphery of the second member. All these methods have a common feature in that the workpiece is essentially twisted. If the workpiece is not flat, these definitions The method will be more dependent on: the geometry of the workpiece. ^ The word ring used in the present invention mainly describes the object that is fixed around the axis, but it does not need to be circularly symmetrical. Printed on page 41 _ This paper size applies to Chinese National Standards (CNS) 8 4_ Specifications (210X297 cm ¥ ~ Γ

Claims (1)

AS B8 C8 D8 / &gt; V. Jjw ζ: 范围 Patent application scope 1 · One is used for plasma reaction declaration of semiconductor processes on workpieces, at least part of which has an upper surface anode. It is facing the reaction An area in one of the chambers; a chuck for clamping the workpiece so that the workpiece occupant area is parallel and directly on the upper surface of the anode; a shield 'composed of a dielectric substance surrounding the periphery of the workpiece area; Electrical shielding to the Ministry of Economic Affairs of the Ministry of Economic Affairs Bureau of the Consumers 'Cooperatives printed a ring' consisting of non-dielectric substances and spanning a small part of the medium. 2_ The reaction chamber according to item 1 of the patent application scope, wherein the non-dielectric ring spans a radially inner portion of the dielectric shield. 3. The reaction chamber described in item 1 of the scope of patent application, further comprising a right-, ^ -dielectric layer between the non-dielectric ring and the anode. 4. The reaction chamber according to item 3 of the scope of patent application, wherein: the dielectric layer between the non-dielectric ring and the anode includes an oxygen substance applied on the surface of the anode. 5. The reaction chamber described in item 3 of the scope of the patent application, wherein: The non-dielectric ring is fixed so that there is a space distance from the anode, so there is a gap between the ring and the anode; and --- ---- —__ ψ /, ο-ΈΙ- This paper size applies to China National Standards (CNS) A * specifications (210 × 297 mm) _Na A8 B8 C8 D8 6. The scope of patent application is in the non-dielectric ring and anode The dielectric layer existing therebetween includes the gap. (Please read the notes on the back before filling this page) 6. The reaction chamber as described in item 1 of the patent application scope, where the non-dielectric substance is a metal. 7. The reaction chamber according to item 1 of the patent application scope, wherein the non-dielectric substance is a semiconductor. 8. The reaction chamber described in item 7 of the scope of patent application, wherein the non-dielectric substance is a silicon substance, and the workpiece also includes a silicon substance. 9. The reaction chamber according to item 1 of the scope of patent application, wherein: the upper surface of the anode has an outer portion extending radially beyond the periphery of the workpiece area; and the shield includes a dielectric substance layer located on the upper surface of the anode. On the outer part. Printed by the Central Bureau of Standards, Ministry of Economic Affairs and Consumer Cooperatives 10. The reaction chamber as described in item 1 of the scope of patent application, wherein: the upper surface of the anode has an outer portion extending radially beyond the periphery of the workpiece area; and the The shield includes a ring-shaped portion that is higher than the outer side of the upper surface of the anode. -No. 43H-; _ This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 40160.6 A8 B8 C8 D8 Patent application scope h The reaction declaration as described in item 丨 of the patent application scope, The non-dielectric substance has better corrosion resistance in the semiconductor manufacturing process than the dielectric substance. u · —a plasma reaction chamber for semiconductor processes on a workpiece, which generates a plasma in an internal area of the reaction chamber, which includes at least: an RF power supply; and an RF power supply connected to the RF power supply Anode with an upper surface facing the inner area of the reaction chamber; a clamping chuck of the workpiece is loosened so that the workpiece is occupied-the workpiece area is parallel and directly on the upper surface of the anode, wherein the upper surface of the anode has _ A perimeter surrounds the perimeter of the workpiece area, and the workpiece is characterized by its thickness; and a shield made of a dielectric substance is located across one of the upper surfaces of the anode and is located at the outer edge of the periphery of the workpiece area; The dielectric shield is thin enough to lightly connect the power source from the anode to the plasma. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 13. The plasma reaction chamber as described in item 12 of the scope of patent application, wherein the dielectric shield is thin enough to allow the RF power source to be coupled from the anode to the electroforge, and It is sufficient to cause the plasma to have a covering on the upper surface of the anode 'and extend radially outward beyond the dielectric shield. 14. A plasma reaction chamber used for semiconductor manufacturing on a workpiece, which applies the Chinese National Standard (CNS) A4 specification (210 X 297) in this paper standard 401606 A8 Βδ C8 D8, economic scope of patent application A plasma is generated in the printed reaction chamber of the Ministry of Standards and Staff ’s Consumer Cooperative Cooperative, which at least includes: an RF power supply providing-RF frequency voltage; an anode connected to the RF power supply, which has a The upper surface faces the inner area of the reaction chamber; a chuck that clamps the workpiece so that the workpiece occupies a workpiece area flat and directly on the upper surface of the impotence, wherein the upper surface of the anode has a periphery surrounding the workpiece And the workpiece is characterized by its thickness; and a shield made of a dielectric substance spans a portion of the upper surface of the anode and is located at the outer edge of the periphery of the workpiece, where °> the electrical shielding system It includes a radial inner portion and a radial outer portion surrounding the inner portion; and the inner portion has a resistance corresponding to the RF frequency, which is lower than that of the outer portion. For a resistor corresponding to the RF frequency. iS.—a plasma reaction chamber used in a semiconductor process on a workpiece, which generates a plasma in an inner region of the reaction chamber, which includes at least: an anode having an upper surface facing the inner region of the reaction chamber A chuck that clamps the workpiece so that the workpiece occupies a workpiece area parallel and directly on the upper surface of the anode, wherein the upper surface of the anode has a periphery surrounding the periphery of the workpiece area, and the workpiece is based on its thickness Its characteristics; and a shield made of a dielectric substance, spanning a part of the upper surface of the anode, and located at the outer edge of the periphery of the workpiece area, of which the 1SA51L paper wave size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 Mm) Please pay attention to the notice of the © © 事 ─ item -_ fill-in-leaf binding line printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs Loiaoe A8 B8 C8 D8 VI. Scope of patent application The dielectric shielding system includes a diameter The inward portion and a radially outer portion surrounding the inner portion; and the axial direction of the radially inner portion is thinner than the outer portion. 16. The reaction chamber according to item 15 of the scope of patent application, wherein the outer portion of the dielectric shield includes an upper portion extending on the workpiece area, and has a radially inner portion disposed relative to the workpiece area. Angle, between _ __Π ϋ degrees and i-45 degrees. 17. The reaction chamber according to item 15 of the scope of patent application, further comprising: a non-dielectric ring spanning at least a part of the inner portion of the dielectric shield; and the dielectric shield and the non-dielectric ring rule Each has a top surface, south of the workpiece area. 18. The reaction chamber according to item 17 of the scope of the patent application, wherein the dielectric shield and the non-dielectric ring each have a top surface with a height close to a height above a work area. 19. The reaction chamber according to item 17 of the scope of patent application, wherein the dielectric shield includes an upper portion that extends above the height of the non-dielectric ring above the work area. 2 0. The reaction chamber as described in item 17 of the scope of patent application, wherein the non-dielectric_46 第 _ This paper size applies to China National Standard (CNS) A4 specification (210X297 cm) (Please read the back Note: Please fill in the pages again). 1Ti wire_ 4〇1θ〇6 A8 B8 C8 D8 a. The outer side of the patent application ring and the dielectric shield have an upper blade of 8 blades above the extension area, and it has A radial inner surface, relatively speaking, is an angle arranged by Machino ’s workpiece in sequence, and its degree is in the range of 110 degrees to 145 degrees. Relocation 2 1. The reaction chamber described in item 17 of the patent application park, wherein: an outer portion of the non-dielectric ring overlaps the dielectric shield, and the outer portion of the non-dielectric ring has a Gradually reduce the thickness &gt;, to its periphery. &% 22 · —Plasma reaction chamber for semiconductor process on a workpiece, which includes: less ---------- install— (please read the note t on the back before filling in @ 页 J The Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs prints an anode with an upper surface 'facing the ~ area of the reaction chamber; a chuck that clamps the workpiece so that the workpiece occupies a domain parallel and directly Located on the upper surface of the anode; and a non-dielectric ring extending beyond the periphery of the workpiece area, wherein the non-dielectric ring is arranged to be in electrical contact with the workpiece when the workpiece is clamped to the workpiece by the chuck And the non-dielectric ring is insulated from the anode. Internal 23. The reaction chamber as described in item 22 of the patent application scope, which further includes: an elastomer fixed under the non-dielectric ring, So as to push the circle upward; D. = °-line · This paper size applies to China National Standard (CNS) A4 (210X297 mm) Τ Printed by the Central Bureau of Standards of the Ministry of Economic Affairs-Industrial and Consumer Cooperative 401606, patent application scope A8 B8 C8 D8 Inside one of the non-dielectric rings The extension extends to the bottom of the workpiece so that when the workpiece is clamped in the workpiece area by the chuck, the ring is brought into contact with the inner side of the periphery of the workpiece by being pushed upward by the elastomer. The reaction chamber according to item 22, wherein the non-dielectric ring includes: an inner portion below the periphery of the workpiece area; and a portion surrounding the periphery of the workpiece area; wherein the outer portion of the non-dielectric ring has a The top surface is higher than its inner surface and is coplanar with the top surface of the workpiece. 25. —Plasma reaction chamber for semiconductor process on a workpiece, which at least includes: an anode with an upper surface 'It faces an internal area of the reaction chamber; a chuck that clamps the workpiece so that the workpiece occupies a workpiece area parallel and directly on the upper surface of the anode; a non-dielectric ring extending beyond the periphery of the workpiece area Table 2 shows that the non-dielectric ring is clamped to the workpiece area when the workpiece is chucked, and it is in electrical contact with the workpiece; and a shield is made of a dielectric substance, where today ρ # τ Child Shielded A small portion surrounds the non-dielectric ring. 26, The reaction chamber described in item 25 of the scope of patent application, in which the size of the paper is applicable to the Chinese National Standard (CNS) Α4 size (210x297 mm) (Please read the precautions on the back first Refill-Page-Pack _ embroidery D8 six 'application surface' part of the non-dielectric ring is overlapped with a part of the dielectric shield; and, the part outside the r-ring has-a gradually reduced axial thickness' and gradually Reduced to its periphery. 27-Click], • Plasma reaction chamber 'for semiconductor manufacturing on a workpiece, which at least includes: an anode with an upper surface, which faces an internal area of the reaction chamber; Tighten the chuck of the workpiece so that the workpiece occupies a workpiece area and is located directly on the upper surface of the anode; and a collar surrounding the periphery of the workpiece area; wherein the collar has a substantial size and is different from other The azimuth is so as to improve the azimuth uniformity during the manufacturing process. 28. If the patent application scope No. 27 depleted reaction chamber, the collar includes an elevated portion 'the elevated portion has a height above the upper surface of the anode, which is different from those with different orientations, so as to improve the orientation during the manufacturing process Uniformity. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 29. If the reaction room under the scope of patent application No. 27, the collar includes an elevated part, the elevated part has an inner diameter, which is different from those in different positions', so that Improve orientation uniformity during manufacturing. 3 0. If the reaction room under the scope of patent application No. 27, including: ________; __ 49th 肓 _______ This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) Employees' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Printed 4〇l606 I D8 __ 一 ------------ ^-VI. Patent application scope-The anode upper surface has a perimeter and is larger than the perimeter of the workpiece area; one includes a dielectric The shielding collar spans a portion of the upper surface of the anode and is located outside the periphery of the workpiece area; and the dielectric shield has a thickness that is different from those in different orientations, so as to improve the uniformity of orientation during the manufacturing process. 3 1. The reaction chamber according to item 27 of the scope of patent application, further comprising: a recess located in a predetermined azimuth position in the reaction chamber; wherein the substantial size covers a range between a first boundary and a second boundary 'It is regarded as one of the functions of the orientation; and the substantial size of the collar will be equal to the first boundary of the orientation of the collar and close to the orientation of the cavity. 3 2 · The reaction chamber according to item 31 of the scope of the patent application, wherein the recess has a gap therethrough to allow a workpiece to enter and exit the reaction chamber. 33. A magnetically enhanced plasma reaction chamber for a semiconductor workpiece, comprising at least: an anode having an upper surface facing an inner region of the reaction chamber; a chuck that clamps the workpiece so that The workpiece occupies a workpiece area parallel and directly on the upper surface of the anode; a plurality of magnetic poles are spaced apart from each other and located on the periphery of the workpiece area, each of which is from the applicable China National Standard (CNS) A4 (2 297 mm) -----,-^-^ Installation—— (Please read the note on the back *-Matters and then the page) Thread-401606 B81 2 3 4 5 6 s___ g68 6. Application for patent scope. Fell has two ends And located between the poles' extended orientations, and each-the magnetic pole's characteristics are defined by-the virtual center point; its orientation is mainly the middle average of the ends of the poles; and a collar around the periphery of the workpiece area , Where the collar has a substantial size and is located within a range of a first boundary and a first boundary as one of the orientations; the substantial size is equal to the first boundary of a first orientation and is close to an individual Individual magnetic poles End; and the substantial dimension is equal to the second boundary in a second orientation and is close to the individual center positions of the individual magnetic poles. 34. The reaction chamber as described in item 33 of the scope of patent application, wherein: the helical collar extends to a height above the workpiece area; and the substantial size of the collar is the height of the collar. 35. The reaction chamber 'according to item 34 of the scope of patent application, wherein the height of the first boundary is lower than that of the second boundary. Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 1 6. The reaction chamber as described in item 34 of the scope of patent application, wherein the collar 2 has an elevated portion, and the elevated portion also has a radially inner surface opposite An angle is set in the 3 workpiece area, and the angle is in the range of 110 degrees to 145 degrees. 4 37. The reaction chamber as described in item 34 of the scope of patent application, wherein the collar has 5 ----page 51 ____— _ 6 This paper size applies to China National Standards (CNS) A4 specifications (210 X 297 mm) A8 B8 C8 D8 401606 The scope of the patent application is relative to a high section 'the high section also has a radial inner surface workpiece area at an angle, the angle is 120 households / person king 1 3 S Electricity &amp; Insider. Degree of knowledge 38. An enhanced plasma semiconductor manufacturing process, which includes at least the following steps to provide a process gas mixture into a plasma reaction chamber; in the reaction chamber 'mixing at least a portion of the plasma from the process gas; forming an electro-reaction In the room, an anode having an upper surface and a plasma surface are provided. To the surface S, the matter-item-item-clamps a workpiece adjacent to the upper surface of the anode. A shield composed of a dielectric substance is fixed. , Surrounds the perimeter of the workpiece; and fixes a ring made of non-dielectric material, spanning at least a part of the dielectric shield. The process according to item 38, wherein the non-dielectric substance has better resistance to corrosiveness due to chemical contact in the plasma than the dielectric substance. 40. A plasma-adding plasma process for etching a hydrocarbon layer on a workpiece, which includes at least the following steps: A process gas is mixed into a plasma reaction chamber to etch the hydrocarbon layer; page 52逋 Finance Closer Standards (CNS> Α4 · (21 () &gt; &lt; 297 male thin) I 401606 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 6. The scope of patent application is in the reaction room, from this process At least a part of the gas forms a plasma mixture; in the reaction chamber, an anode with an upper surface is provided, facing the plasma; a workpiece is clamped adjacent to the upper surface of the anode; a dielectric material is fixed A shield that surrounds the periphery of the workpiece; and a ring made of a non-dielectric material that spans at least a portion of the dielectric shield and resists the corrosive resistance caused by chemical species in the plasma 41. The process described in item 40 of the scope of patent application, wherein the shielding is composed of a dream of dioxide, and the ring is composed of a substance. 42. Rushen The process described in item 40 of the patent scope, wherein the hydrocarbon layer is a slate printing surface substance. 43. —Plasma adding process for etching a spin_on glass layer on a workpiece 'It includes at least Steps: Provide a process gas mix into a plasma reaction chamber to etch the spin-on glass layer; form a plasma mix from at least a part of the process gas in the reaction chamber; and provide a reaction chamber with an upper surface in the reaction chamber. Anode, facing the size of this paper. Applicable to the Chinese national standard (€ Post) 厶 4 size (210 &gt; &lt; 297): 6. Plasma for patent application; clamping a workpiece adjacent to the upper surface of the anode; fixing a shield composed of a dielectric substance surrounding the periphery of the workpiece; and fixing a workpiece composed of a non-dielectric substance The ring, which spans at least a portion of the dielectric shield, has a better resistance to rot in the plasma due to chemical species contact than the dielectric substance. 44. The process according to item 43 of the scope of patent application, wherein the shield is composed of silicon dioxide 'and the ring is composed of a silicon substance. 45 · —A method for reducing corrosion of any substance in the vicinity of a workpiece in a plasma reaction chamber, which includes at least the following steps: providing a process gas into the plasma reaction chamber; in the reaction chamber, forming from at least a part of the process gas — Plasma mixing; In the reaction chamber, provide an anode with a top surface facing the plasma; ~ Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs to clamp a workpiece adjacent to the upper surface of the anode; A collar surrounds the perimeter of the workpiece; wherein the collar has an elevated portion extending above the work and T area, and the elevated portion of the collar has a radial inner surface at an angle relative to the swing, and the angle is For paper between 110 ° and 145 °, this paper uses the Chinese National Standard (CNS) A4 specification (210 x 297 mm) 401606 A8 B8 C8 D8. Patent application scope 46. As described in the 45th patent application method, The angle is between 120 degrees and 135 degrees. 47. The method as described in claim 45, wherein the collar is a dielectric substance. Please read the note at the back ~ the items first, and then _ order printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs.