TW401606B - Shield or ring surrounding semiconductor workpiece in plasma chamber - Google Patents
Shield or ring surrounding semiconductor workpiece in plasma chamber Download PDFInfo
- Publication number
- TW401606B TW401606B TW87114500A TW87114500A TW401606B TW 401606 B TW401606 B TW 401606B TW 87114500 A TW87114500 A TW 87114500A TW 87114500 A TW87114500 A TW 87114500A TW 401606 B TW401606 B TW 401606B
- Authority
- TW
- Taiwan
- Prior art keywords
- workpiece
- dielectric
- reaction chamber
- anode
- plasma
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000006243 chemical reaction Methods 0.000 claims abstract description 173
- 238000000034 method Methods 0.000 claims abstract description 135
- 230000008569 process Effects 0.000 claims abstract description 123
- 239000007789 gas Substances 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims description 54
- 239000000126 substance Substances 0.000 claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 238000005260 corrosion Methods 0.000 claims description 23
- 230000007797 corrosion Effects 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 230000002829 reductive effect Effects 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 230000002079 cooperative effect Effects 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 230000006870 function Effects 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000013626 chemical specie Substances 0.000 claims description 6
- 229920001971 elastomer Polymers 0.000 claims description 6
- 239000000806 elastomer Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000000875 corresponding effect Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 3
- 201000001881 impotence Diseases 0.000 claims 1
- 239000010454 slate Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 20
- 230000003628 erosive effect Effects 0.000 abstract description 3
- 230000001668 ameliorated effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 118
- 230000000694 effects Effects 0.000 description 48
- 230000004044 response Effects 0.000 description 25
- 238000013461 design Methods 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 15
- 239000010453 quartz Substances 0.000 description 15
- 230000008859 change Effects 0.000 description 13
- 239000012495 reaction gas Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 11
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 239000003153 chemical reaction reagent Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 235000015170 shellfish Nutrition 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 241000894007 species Species 0.000 description 5
- 238000006757 chemical reactions by type Methods 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 230000001550 time effect Effects 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910000951 Aluminide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- UIYWAQXAJKQUAU-UHFFFAOYSA-N [O].[O].[Si] Chemical compound [O].[O].[Si] UIYWAQXAJKQUAU-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- -1 fluoride ions Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 230000000968 intestinal effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93186497A | 1997-09-16 | 1997-09-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW401606B true TW401606B (en) | 2000-08-11 |
Family
ID=25461470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW87114500A TW401606B (en) | 1997-09-16 | 1998-09-01 | Shield or ring surrounding semiconductor workpiece in plasma chamber |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4602545B2 (enExample) |
| TW (1) | TW401606B (enExample) |
| WO (1) | WO1999014788A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105551925A (zh) * | 2015-12-08 | 2016-05-04 | 武汉华星光电技术有限公司 | 干刻蚀装置 |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6344105B1 (en) | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
| US6257168B1 (en) * | 1999-06-30 | 2001-07-10 | Lam Research Corporation | Elevated stationary uniformity ring design |
| US6363882B1 (en) * | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
| US6489249B1 (en) * | 2000-06-20 | 2002-12-03 | Infineon Technologies Ag | Elimination/reduction of black silicon in DT etch |
| JP2002222795A (ja) * | 2001-01-26 | 2002-08-09 | Anelva Corp | ドライエッチング装置 |
| JP4676074B2 (ja) * | 2001-02-15 | 2011-04-27 | 東京エレクトロン株式会社 | フォーカスリング及びプラズマ処理装置 |
| US6554954B2 (en) | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
| TWI246873B (en) * | 2001-07-10 | 2006-01-01 | Tokyo Electron Ltd | Plasma processing device |
| DE10143718A1 (de) * | 2001-08-31 | 2003-03-27 | Infineon Technologies Ag | Lagerungsvorrichtung für einen Wafer in einer Plasmaätzanlage |
| US6887340B2 (en) | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
| TW200520632A (en) * | 2003-09-05 | 2005-06-16 | Tokyo Electron Ltd | Focus ring and plasma processing apparatus |
| US7658816B2 (en) | 2003-09-05 | 2010-02-09 | Tokyo Electron Limited | Focus ring and plasma processing apparatus |
| US7837825B2 (en) | 2005-06-13 | 2010-11-23 | Lam Research Corporation | Confined plasma with adjustable electrode area ratio |
| US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
| US7358508B2 (en) * | 2005-11-10 | 2008-04-15 | Axcelis Technologies, Inc. | Ion implanter with contaminant collecting surface |
| US8435379B2 (en) * | 2007-05-08 | 2013-05-07 | Applied Materials, Inc. | Substrate cleaning chamber and cleaning and conditioning methods |
| US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| US20150001180A1 (en) * | 2013-06-28 | 2015-01-01 | Applied Materials, Inc. | Process kit for edge critical dimension uniformity control |
| JP3210105U (ja) * | 2016-03-04 | 2017-04-27 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | ユニバーサルプロセスキット |
| JP7278160B2 (ja) * | 2019-07-01 | 2023-05-19 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| JP7365912B2 (ja) * | 2020-01-10 | 2023-10-20 | 東京エレクトロン株式会社 | エッジリング及び基板処理装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04333228A (ja) * | 1991-05-09 | 1992-11-20 | Mitsubishi Electric Corp | ドライエッチング装置 |
| JPH0529270A (ja) * | 1991-07-23 | 1993-02-05 | Tokyo Electron Ltd | マグネトロンプラズマ処理装置 |
| JP3260168B2 (ja) * | 1991-07-23 | 2002-02-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR100297358B1 (ko) * | 1991-07-23 | 2001-11-30 | 히가시 데쓰로 | 플라즈마에칭장치 |
| JP3173693B2 (ja) * | 1993-10-04 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
| US5529657A (en) * | 1993-10-04 | 1996-06-25 | Tokyo Electron Limited | Plasma processing apparatus |
| US5573596A (en) * | 1994-01-28 | 1996-11-12 | Applied Materials, Inc. | Arc suppression in a plasma processing system |
| JP3210207B2 (ja) * | 1994-04-20 | 2001-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JPH08339895A (ja) * | 1995-06-12 | 1996-12-24 | Tokyo Electron Ltd | プラズマ処理装置 |
| JPH09129612A (ja) * | 1995-10-26 | 1997-05-16 | Tokyo Electron Ltd | エッチングガス及びエッチング方法 |
| US6113731A (en) * | 1997-01-02 | 2000-09-05 | Applied Materials, Inc. | Magnetically-enhanced plasma chamber with non-uniform magnetic field |
-
1998
- 1998-08-17 WO PCT/US1998/017042 patent/WO1999014788A1/en not_active Ceased
- 1998-08-17 JP JP2000512233A patent/JP4602545B2/ja not_active Expired - Fee Related
- 1998-09-01 TW TW87114500A patent/TW401606B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105551925A (zh) * | 2015-12-08 | 2016-05-04 | 武汉华星光电技术有限公司 | 干刻蚀装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4602545B2 (ja) | 2010-12-22 |
| JP2001516948A (ja) | 2001-10-02 |
| WO1999014788A1 (en) | 1999-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |