JP2001502123A - 複数の電子部品の製造方法 - Google Patents
複数の電子部品の製造方法Info
- Publication number
- JP2001502123A JP2001502123A JP11511887A JP51188799A JP2001502123A JP 2001502123 A JP2001502123 A JP 2001502123A JP 11511887 A JP11511887 A JP 11511887A JP 51188799 A JP51188799 A JP 51188799A JP 2001502123 A JP2001502123 A JP 2001502123A
- Authority
- JP
- Japan
- Prior art keywords
- segment
- substrate
- layer
- strip
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 60
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000005422 blasting Methods 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 4
- 238000009751 slip forming Methods 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 73
- 239000011521 glass Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005308 flint glass Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 235000014380 magnesium carbonate Nutrition 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/403—Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0317—Thin film conductor layer; Thin film passive component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0097—Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49004—Electrical device making including measuring or testing of device or component part
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP97202432 | 1997-08-05 | ||
| EP97202432.7 | 1997-08-05 | ||
| PCT/IB1998/000916 WO1999008297A2 (en) | 1997-08-05 | 1998-06-11 | Method of manufacturing a plurality of electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001502123A true JP2001502123A (ja) | 2001-02-13 |
| JP2001502123A5 JP2001502123A5 (enExample) | 2006-01-05 |
Family
ID=8228622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11511887A Ceased JP2001502123A (ja) | 1997-08-05 | 1998-06-11 | 複数の電子部品の製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6240621B1 (enExample) |
| EP (1) | EP0941545B1 (enExample) |
| JP (1) | JP2001502123A (enExample) |
| KR (1) | KR100561792B1 (enExample) |
| CN (1) | CN1179381C (enExample) |
| DE (1) | DE69833193T2 (enExample) |
| TW (1) | TW412763B (enExample) |
| WO (1) | WO1999008297A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009267323A (ja) * | 2008-03-31 | 2009-11-12 | Tdk Corp | 端子電極形成方法 |
| JP2014207407A (ja) * | 2013-04-16 | 2014-10-30 | Tdk株式会社 | 積層コンデンサアレイ |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7336467B2 (en) | 2000-10-17 | 2008-02-26 | X2Y Attenuators, Llc | Energy pathway arrangement |
| US20030161086A1 (en) | 2000-07-18 | 2003-08-28 | X2Y Attenuators, Llc | Paired multi-layered dielectric independent passive component architecture resulting in differential and common mode filtering with surge protection in one integrated package |
| US9054094B2 (en) | 1997-04-08 | 2015-06-09 | X2Y Attenuators, Llc | Energy conditioning circuit arrangement for integrated circuit |
| US7336468B2 (en) | 1997-04-08 | 2008-02-26 | X2Y Attenuators, Llc | Arrangement for energy conditioning |
| US6603646B2 (en) | 1997-04-08 | 2003-08-05 | X2Y Attenuators, Llc | Multi-functional energy conditioner |
| US7274549B2 (en) | 2000-12-15 | 2007-09-25 | X2Y Attenuators, Llc | Energy pathway arrangements for energy conditioning |
| US6650525B2 (en) | 1997-04-08 | 2003-11-18 | X2Y Attenuators, Llc | Component carrier |
| US6606011B2 (en) | 1998-04-07 | 2003-08-12 | X2Y Attenuators, Llc | Energy conditioning circuit assembly |
| US7110235B2 (en) | 1997-04-08 | 2006-09-19 | Xzy Altenuators, Llc | Arrangement for energy conditioning |
| US7301748B2 (en) | 1997-04-08 | 2007-11-27 | Anthony Anthony A | Universal energy conditioning interposer with circuit architecture |
| US7321485B2 (en) | 1997-04-08 | 2008-01-22 | X2Y Attenuators, Llc | Arrangement for energy conditioning |
| US6894884B2 (en) | 1997-04-08 | 2005-05-17 | Xzy Attenuators, Llc | Offset pathway arrangements for energy conditioning |
| US7042703B2 (en) | 2000-03-22 | 2006-05-09 | X2Y Attenuators, Llc | Energy conditioning structure |
| US7106570B2 (en) | 1997-04-08 | 2006-09-12 | Xzy Altenuators, Llc | Pathway arrangement |
| US6018448A (en) * | 1997-04-08 | 2000-01-25 | X2Y Attenuators, L.L.C. | Paired multi-layered dielectric independent passive component architecture resulting in differential and common mode filtering with surge protection in one integrated package |
| US7110227B2 (en) | 1997-04-08 | 2006-09-19 | X2Y Attenuators, Llc | Universial energy conditioning interposer with circuit architecture |
| US7427816B2 (en) | 1998-04-07 | 2008-09-23 | X2Y Attenuators, Llc | Component carrier |
| EP1070389B1 (en) | 1998-04-07 | 2007-12-05 | X2Y Attenuators, L.L.C. | Component carrier |
| US6452247B1 (en) * | 1999-11-23 | 2002-09-17 | Intel Corporation | Inductor for integrated circuit |
| US6891461B2 (en) * | 1999-11-23 | 2005-05-10 | Intel Corporation | Integrated transformer |
| US6815220B2 (en) | 1999-11-23 | 2004-11-09 | Intel Corporation | Magnetic layer processing |
| US6870456B2 (en) * | 1999-11-23 | 2005-03-22 | Intel Corporation | Integrated transformer |
| US6856228B2 (en) | 1999-11-23 | 2005-02-15 | Intel Corporation | Integrated inductor |
| US7113383B2 (en) | 2000-04-28 | 2006-09-26 | X2Y Attenuators, Llc | Predetermined symmetrically balanced amalgam with complementary paired portions comprising shielding electrodes and shielded electrodes and other predetermined element portions for symmetrically balanced and complementary energy portion conditioning |
| US6549389B2 (en) | 2000-08-15 | 2003-04-15 | X2Y Attenuators, Llc | Electrode arrangement for circuit energy conditioning |
| US7193831B2 (en) | 2000-10-17 | 2007-03-20 | X2Y Attenuators, Llc | Energy pathway arrangement |
| AU2002213356B2 (en) | 2000-10-17 | 2005-03-10 | X2Y Attenuators, Llc | Amalgam of shielding and shielded energy pathways and other elements for single or multiple circuitries with common reference node |
| JP3955241B2 (ja) * | 2002-06-21 | 2007-08-08 | 東京エレクトロン株式会社 | Memsアレイとその製造方法及びそれに基づくmemsデバイスの製造方法 |
| KR100678496B1 (ko) * | 2002-09-10 | 2007-02-06 | 티디케이가부시기가이샤 | 적층 콘덴서 |
| KR20050048644A (ko) * | 2002-09-27 | 2005-05-24 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 회로기판의 측면을 배선하기 위한 리소그래픽 방법 |
| US7180718B2 (en) | 2003-01-31 | 2007-02-20 | X2Y Attenuators, Llc | Shielded energy conditioner |
| US7852185B2 (en) * | 2003-05-05 | 2010-12-14 | Intel Corporation | On-die micro-transformer structures with magnetic materials |
| US7440252B2 (en) | 2003-05-29 | 2008-10-21 | X2Y Attenuators, Llc | Connector related structures including an energy conditioner |
| WO2005015719A2 (en) | 2003-07-21 | 2005-02-17 | X2Y Attenuators, Llc | Filter assembly |
| WO2005065097A2 (en) | 2003-12-22 | 2005-07-21 | X2Y Attenuators, Llc | Internally shielded energy conditioner |
| JP2008535207A (ja) | 2005-03-01 | 2008-08-28 | エックストゥーワイ アテニュエイターズ,エルエルシー | 共平面導体を有する調整器 |
| WO2006093831A2 (en) | 2005-03-01 | 2006-09-08 | X2Y Attenuators, Llc | Energy conditioner with tied through electrodes |
| US7586728B2 (en) | 2005-03-14 | 2009-09-08 | X2Y Attenuators, Llc | Conditioner with coplanar conductors |
| US8134548B2 (en) * | 2005-06-30 | 2012-03-13 | Micron Technology, Inc. | DC-DC converter switching transistor current measurement technique |
| CN101395683A (zh) | 2006-03-07 | 2009-03-25 | X2Y衰减器有限公司 | 能量调节装置结构 |
| JP5233637B2 (ja) * | 2008-04-02 | 2013-07-10 | 日立金属株式会社 | 多層セラミック基板、及び電子部品 |
| CN102122553B (zh) * | 2010-12-17 | 2013-03-20 | 深圳顺络电子股份有限公司 | 卧式结构的低阻值片式负温度系数热敏电阻及其制造方法 |
| DE102011005658A1 (de) * | 2011-03-16 | 2012-09-20 | Sirona Dental Systems Gmbh | Träger, vorzugsweise für ein elektronisches Bauteil, eine Baugruppe solcher Träger und ein Verfahren zur Herstellung einer Baugruppe solcher Träger |
| DE102012109704A1 (de) * | 2012-10-11 | 2014-04-17 | Epcos Ag | Keramisches Bauelement mit Schutzschicht und Verfahren zu dessen Herstellung |
| DE102018115205A1 (de) * | 2018-06-25 | 2020-01-02 | Vishay Electronic Gmbh | Verfahren zur Herstellung einer Vielzahl von Widerstandsbaueinheiten |
| CN109963409B (zh) * | 2019-04-10 | 2021-02-23 | 京东方科技集团股份有限公司 | 基板侧面导线的制造方法和基板结构 |
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| US5414589A (en) * | 1993-06-07 | 1995-05-09 | Rohm Co., Ltd. | Capacitor having a changeable dielectric capacity and manufacturing method thereof |
| JP2870371B2 (ja) * | 1993-08-05 | 1999-03-17 | 株式会社村田製作所 | 積層電子部品、その製造方法およびその特性測定方法 |
| JP3027081B2 (ja) * | 1993-12-09 | 2000-03-27 | アルプス電気株式会社 | 薄膜素子 |
| JPH07161223A (ja) * | 1993-12-10 | 1995-06-23 | Murata Mfg Co Ltd | 導電性ペーストおよび積層セラミックコンデンサ |
| WO1995030178A1 (en) * | 1994-04-28 | 1995-11-09 | Philips Electronics N.V. | Method of photolithographically producing a copper pattern on a plate of an electrically insulating material |
| US5600533A (en) * | 1994-06-23 | 1997-02-04 | Murata Manufacturing Co., Ltd. | Multilayer ceramic capacitor having an anti-reducing agent |
| WO1996030916A2 (en) | 1995-03-27 | 1996-10-03 | Philips Electronics N.V. | Method of manufacturing an electronic multilayer component |
| US5712759A (en) * | 1995-12-22 | 1998-01-27 | International Business Machines Corporation | Sidewall capacitor with L-shaped dielectric |
| US5699607A (en) * | 1996-01-22 | 1997-12-23 | Littelfuse, Inc. | Process for manufacturing an electrical device comprising a PTC element |
| KR100326979B1 (ko) * | 1996-12-18 | 2002-05-10 | 포만 제프리 엘 | 캐패시터형성방법및그캐패시터구조체 |
| US5880925A (en) * | 1997-06-27 | 1999-03-09 | Avx Corporation | Surface mount multilayer capacitor |
-
1998
- 1998-06-11 DE DE69833193T patent/DE69833193T2/de not_active Expired - Fee Related
- 1998-06-11 EP EP98923002A patent/EP0941545B1/en not_active Expired - Lifetime
- 1998-06-11 CN CNB98801419XA patent/CN1179381C/zh not_active Expired - Fee Related
- 1998-06-11 JP JP11511887A patent/JP2001502123A/ja not_active Ceased
- 1998-06-11 KR KR1019997002927A patent/KR100561792B1/ko not_active Expired - Fee Related
- 1998-06-11 WO PCT/IB1998/000916 patent/WO1999008297A2/en not_active Ceased
- 1998-07-15 TW TW087111500A patent/TW412763B/zh not_active IP Right Cessation
- 1998-08-04 US US09/128,837 patent/US6240621B1/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009267323A (ja) * | 2008-03-31 | 2009-11-12 | Tdk Corp | 端子電極形成方法 |
| JP2014207407A (ja) * | 2013-04-16 | 2014-10-30 | Tdk株式会社 | 積層コンデンサアレイ |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0941545A2 (en) | 1999-09-15 |
| DE69833193T2 (de) | 2006-09-21 |
| DE69833193D1 (de) | 2006-04-06 |
| CN1179381C (zh) | 2004-12-08 |
| KR20000068710A (ko) | 2000-11-25 |
| US6240621B1 (en) | 2001-06-05 |
| WO1999008297A3 (en) | 1999-04-15 |
| KR100561792B1 (ko) | 2006-03-21 |
| TW412763B (en) | 2000-11-21 |
| WO1999008297A2 (en) | 1999-02-18 |
| CN1241285A (zh) | 2000-01-12 |
| EP0941545B1 (en) | 2006-01-11 |
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