JP2001326363A5 - - Google Patents

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Publication number
JP2001326363A5
JP2001326363A5 JP2001063540A JP2001063540A JP2001326363A5 JP 2001326363 A5 JP2001326363 A5 JP 2001326363A5 JP 2001063540 A JP2001063540 A JP 2001063540A JP 2001063540 A JP2001063540 A JP 2001063540A JP 2001326363 A5 JP2001326363 A5 JP 2001326363A5
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JP
Japan
Prior art keywords
semiconductor film
amorphous
crystalline semiconductor
region
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001063540A
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English (en)
Japanese (ja)
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JP2001326363A (ja
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Publication date
Application filed filed Critical
Priority to JP2001063540A priority Critical patent/JP2001326363A/ja
Priority claimed from JP2001063540A external-priority patent/JP2001326363A/ja
Publication of JP2001326363A publication Critical patent/JP2001326363A/ja
Publication of JP2001326363A5 publication Critical patent/JP2001326363A5/ja
Withdrawn legal-status Critical Current

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JP2001063540A 2000-03-08 2001-03-07 半導体装置及びその作製方法 Withdrawn JP2001326363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001063540A JP2001326363A (ja) 2000-03-08 2001-03-07 半導体装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000-62981 2000-03-08
JP2000062955 2000-03-08
JP2000062981 2000-03-08
JP2000-62955 2000-03-08
JP2001063540A JP2001326363A (ja) 2000-03-08 2001-03-07 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
JP2001326363A JP2001326363A (ja) 2001-11-22
JP2001326363A5 true JP2001326363A5 (enExample) 2005-03-03

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ID=27342605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001063540A Withdrawn JP2001326363A (ja) 2000-03-08 2001-03-07 半導体装置及びその作製方法

Country Status (1)

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JP (1) JP2001326363A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098084B2 (en) 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6916693B2 (en) * 2000-03-08 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7259082B2 (en) 2002-10-03 2007-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP4498716B2 (ja) * 2002-10-03 2010-07-07 株式会社半導体エネルギー研究所 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法
KR100954332B1 (ko) 2003-06-30 2010-04-21 엘지디스플레이 주식회사 액정표시소자와 그 제조방법
US8334536B2 (en) 2007-03-16 2012-12-18 Samsung Display Co., Ltd. Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same

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