JP2001326363A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法

Info

Publication number
JP2001326363A
JP2001326363A JP2001063540A JP2001063540A JP2001326363A JP 2001326363 A JP2001326363 A JP 2001326363A JP 2001063540 A JP2001063540 A JP 2001063540A JP 2001063540 A JP2001063540 A JP 2001063540A JP 2001326363 A JP2001326363 A JP 2001326363A
Authority
JP
Japan
Prior art keywords
semiconductor film
amorphous
region
crystalline semiconductor
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001063540A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001326363A5 (enExample
Inventor
Hideto Onuma
英人 大沼
Chiho Kokubo
千穂 小久保
Koichiro Tanaka
幸一郎 田中
Naoki Makita
直樹 牧田
Shuhei Tsuchimoto
修平 土本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, Sharp Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001063540A priority Critical patent/JP2001326363A/ja
Publication of JP2001326363A publication Critical patent/JP2001326363A/ja
Publication of JP2001326363A5 publication Critical patent/JP2001326363A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2001063540A 2000-03-08 2001-03-07 半導体装置及びその作製方法 Withdrawn JP2001326363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001063540A JP2001326363A (ja) 2000-03-08 2001-03-07 半導体装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000-62981 2000-03-08
JP2000062955 2000-03-08
JP2000062981 2000-03-08
JP2000-62955 2000-03-08
JP2001063540A JP2001326363A (ja) 2000-03-08 2001-03-07 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
JP2001326363A true JP2001326363A (ja) 2001-11-22
JP2001326363A5 JP2001326363A5 (enExample) 2005-03-03

Family

ID=27342605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001063540A Withdrawn JP2001326363A (ja) 2000-03-08 2001-03-07 半導体装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP2001326363A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146823A (ja) * 2002-10-03 2004-05-20 Semiconductor Energy Lab Co Ltd レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法
US6916693B2 (en) * 2000-03-08 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7098084B2 (en) 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100954332B1 (ko) 2003-06-30 2010-04-21 엘지디스플레이 주식회사 액정표시소자와 그 제조방법
US7800080B2 (en) 2002-10-03 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of manufacturing semiconductor device
US8334536B2 (en) 2007-03-16 2012-12-18 Samsung Display Co., Ltd. Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916693B2 (en) * 2000-03-08 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7098084B2 (en) 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7183145B2 (en) 2000-03-08 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7638377B2 (en) 2000-03-08 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2004146823A (ja) * 2002-10-03 2004-05-20 Semiconductor Energy Lab Co Ltd レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法
US7800080B2 (en) 2002-10-03 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of manufacturing semiconductor device
KR100954332B1 (ko) 2003-06-30 2010-04-21 엘지디스플레이 주식회사 액정표시소자와 그 제조방법
US8334536B2 (en) 2007-03-16 2012-12-18 Samsung Display Co., Ltd. Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same

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