JP2001294437A - Chamfering method for glass substrate of liquid crystal display device and heater used for this method - Google Patents

Chamfering method for glass substrate of liquid crystal display device and heater used for this method

Info

Publication number
JP2001294437A
JP2001294437A JP2000112247A JP2000112247A JP2001294437A JP 2001294437 A JP2001294437 A JP 2001294437A JP 2000112247 A JP2000112247 A JP 2000112247A JP 2000112247 A JP2000112247 A JP 2000112247A JP 2001294437 A JP2001294437 A JP 2001294437A
Authority
JP
Japan
Prior art keywords
liquid crystal
glass substrate
crystal display
heater
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000112247A
Other languages
Japanese (ja)
Other versions
JP3719904B2 (en
Inventor
Masahiro Yamada
昌弘 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2000112247A priority Critical patent/JP3719904B2/en
Publication of JP2001294437A publication Critical patent/JP2001294437A/en
Application granted granted Critical
Publication of JP3719904B2 publication Critical patent/JP3719904B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/02Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
    • C03B29/025Glass sheets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a chamfering method of glass substrates for a liquid crystal display device which is capable of chamfering all of the corner parts of the outer peripheral edges of the glass substrate right after parting of the glass substrates without contaminating the glass substrates and further does not damage the display circuits, etc., disposed at the glass substrates. SOLUTION: The chamfering method of the glass substrates for the liquid crystal display device consists in brining heaters into contact with the corner parts at the outer peripheral edges of the glass substrates and chamfering the corner parts by melting the corner parts in the liquid crystal display device consisting of the glass substrates facing each other across liquid crystals.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、液晶表示装置お
よびその製造装置に関するものであり、特に液晶表示パ
ネルの外周エッジの角部の加工に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and an apparatus for manufacturing the same, and more particularly to processing a corner portion of an outer peripheral edge of a liquid crystal display panel.

【0002】[0002]

【従来の技術】一般に、液晶表示装置は、液晶をはさん
で互いに対向する一対のガラス基板からなる液晶表示パ
ネルと、液晶表示パネルの表示制御を行うドライバIC
により構成されている。
2. Description of the Related Art Generally, a liquid crystal display device comprises a liquid crystal display panel comprising a pair of glass substrates opposed to each other with a liquid crystal interposed therebetween, and a driver IC for controlling display of the liquid crystal display panel.
It consists of.

【0003】この液晶表示装置の主要な構成要素である
液晶表示パネルは、制御信号を入力するための入力用電
極を形成した一対の対向するガラス基板内に液晶を注入
し、この入力用電極に外部ドライバICから電気信号を
加えて、外部からの入射光の偏光成分を制御することに
より光の透過量を制御して情報を表示するものである。
A liquid crystal display panel, which is a main component of the liquid crystal display device, injects liquid crystal into a pair of opposing glass substrates on which input electrodes for inputting control signals are formed, and applies the liquid crystal to the input electrodes. An information signal is displayed by controlling an amount of transmitted light by controlling a polarization component of incident light from the outside by adding an electric signal from an external driver IC.

【0004】このような液晶表示パネルは、コスト面で
有利とするために、大きなガラス基板から多数個取りす
ることにより製造されることが多い。この種の製造方法
として、まず大きな一対のガラス基板上に透明電極など
からなる表示回路を形成し、対向する一対のガラス基板
を貼り合わせた後、分断することにより複数の液晶表示
パネルを製造する場合と、表示回路の形成途中にガラス
基板の分断を実施した後、貼り合わせる場合との2種類
がある。
[0004] Such a liquid crystal display panel is often manufactured by taking a large number of pieces from a large glass substrate in order to be advantageous in terms of cost. As a manufacturing method of this kind, a plurality of liquid crystal display panels are manufactured by first forming a display circuit including a transparent electrode or the like on a pair of large glass substrates, bonding a pair of glass substrates opposed to each other, and dividing the panel. There are two types: a case where the glass substrate is divided during the formation of the display circuit and then a glass substrate is bonded.

【0005】また、小型の機種を中心として、検査を簡
便に済ますために、複数個の液晶パネルがつながった状
態で液晶を注入し、検査後個々の液晶表示パネルに分断
する方法も行われている。
[0005] In addition, in order to simplify inspection, mainly in small models, a method of injecting liquid crystal in a state where a plurality of liquid crystal panels are connected, and dividing the liquid crystal display panels into individual liquid crystal display panels after inspection has been performed. I have.

【0006】いずれの場合もガラス基板の分断には、超
鋼合金製またはダイヤモンド製のカッターを用いてガラ
ス表面にスクライブ(深さ数十〜数百μmの傷)を入れ
た後、物理的応力によりガラスを分断する。このような
分断方法の場合、その分断面は、スクライブに起因する
微小な割れや欠け、すなわちクラックが発生する。ま
た、切断したままの状態の分断面は鋭角に切り立ってい
ることが多い。
[0006] In any case, the glass substrate is cut by scribing (scratch having a depth of several tens to several hundreds of μm) on the glass surface using a cutter made of a super steel alloy or a diamond, and then applying a physical stress. To break the glass. In the case of such a dividing method, minute cracks or chips, that is, cracks, are generated in the sectional plane due to the scribe. In addition, the cut surface in the cut state is often steep at an acute angle.

【0007】このような状態のまま、ガラス基板を分断
した後に何も処理を施さない場合、ガラス基板の分断面
は構造的にもろく、機械的衝撃を受けると分断面からク
ラックを生じたり、微小なガラス屑(カレット)が生じ
る等の問題がある。また、外部のドライバIC等を搭載
した表示制御用回路をTCP(TapeCarrier
Package)等のフィルム状基板にてガラス基板
の入力用電極に接続する場合、分断面を含む外周エッジ
の角部で切断が生じやすくなる問題もある。
In this state, if no processing is performed after the glass substrate is cut, the cross section of the glass substrate is structurally fragile. There is a problem such as the generation of unusual glass dust (cullet). Further, a display control circuit on which an external driver IC or the like is mounted is connected to a TCP (TapeCarrier).
In the case of connecting to an input electrode of a glass substrate using a film-like substrate such as a package, there is also a problem that cutting is likely to occur at a corner of an outer peripheral edge including a partial cross section.

【0008】また、カレットが発生した場合、カレット
が液晶表示装置の表示エリアに入り込んで表示品位を下
げたり、表示制御用回路をガラス基板の入力用電極に取
り付ける際の接触不良の原因となる問題もある。
Further, when cullet is generated, the cullet enters the display area of the liquid crystal display device to degrade the display quality and causes a contact failure when the display control circuit is attached to the input electrode of the glass substrate. There is also.

【0009】このため、通常は液晶表示パネルの外周エ
ッジの角部に面取り加工を施し、クラックや鋭角に切り
立った角を除去している。この面取り方法としては、従
来より、砥石による研磨が知られており、広く実施され
ている。また、砥石による研磨以外に、レーザー光線に
より熱処理を行い、外周エッジの角部に発生するクラッ
クを熔融、消滅させる方法も提案されている(例えば、
特開平10−111497号公報参照)。
For this reason, the corners of the outer peripheral edge of the liquid crystal display panel are usually chamfered to remove cracks and sharply sharp corners. As this chamfering method, polishing with a grindstone is conventionally known and widely practiced. Further, in addition to grinding with a grindstone, a method of performing a heat treatment with a laser beam to melt and eliminate cracks generated at the corners of the outer peripheral edge has been proposed (for example,
See JP-A-10-111497).

【0010】[0010]

【発明が解決しようとする課題】砥石による面取りの場
合、ガラスを研磨することにより結果としてカレットが
発生するので、その除去のために後工程での洗浄が必要
となる。また、研磨を行うために切削水が必要となるの
で、この切削水により表示回路面が汚染されてしまう。
このため、汚染を極力避けなければならない貼り合わせ
前のガラス基板や、液晶注入前の液晶表示パネルに対す
る面取り処理が困難であり、クラックやカレットを防止
する上で最も効果的なガラス基板分断直後に面取りを実
施することができなかった。
In the case of chamfering with a grindstone, cullet is generated as a result of polishing the glass, so that it is necessary to perform cleaning in a later step to remove the cullet. Further, since cutting water is required to perform the polishing, the display circuit surface is contaminated by the cutting water.
For this reason, it is difficult to chamfer the glass substrate before bonding and the liquid crystal display panel before injecting liquid crystal, which must avoid contamination as much as possible, and it is most effective to prevent cracks and cullets immediately after the glass substrate is cut. The chamfer could not be performed.

【0011】その上、砥石による面取りでは、液晶表示
パネルの入力用電極の上部に位置するガラス基板の外周
エッジの角部に対して面取りを実施することが困難であ
った。このため、この部分からクラックおよびカレット
が発生することを防ぐことができず、不十分な防止効果
しか得られなかった。
In addition, when chamfering with a grindstone, it is difficult to chamfer the corners of the outer peripheral edge of the glass substrate located above the input electrodes of the liquid crystal display panel. For this reason, generation of cracks and cullets from this portion could not be prevented, and only an insufficient prevention effect was obtained.

【0012】また、熱源にレーザー光線を用いて、外周
エッジの角部のクラックを熔融、消滅させる方法の場
合、照射されたレーザー光がガラス面を透過する際に屈
折し、基板内の表示回路に当たると、表示回路が破壊さ
れて表示不良の原因となる可能性があった。
In the case of using a laser beam as a heat source to melt and eliminate cracks at the corners of the outer peripheral edge, the irradiated laser light is refracted when passing through the glass surface and hits a display circuit in the substrate. Then, there is a possibility that the display circuit is destroyed and causes a display failure.

【0013】この発明は以上のような事情を考慮してな
されたものであり、ガラス基板を汚染することなくガラ
ス基板分断直後にガラス基板の全ての外周エッジの角部
に対して面取りでき、更にはガラス基板に設けられた表
示回路等に損傷を与えることもない液晶表示装置のガラ
ス基板の面取り方法およびその方法に用いる加熱器を提
供するものである。
The present invention has been made in view of the above circumstances, and can chamfer all corners of the outer peripheral edge of a glass substrate immediately after cutting the glass substrate without contaminating the glass substrate. An object of the present invention is to provide a method for chamfering a glass substrate of a liquid crystal display device which does not damage a display circuit and the like provided on the glass substrate and a heater used for the method.

【0014】[0014]

【課題を解決するための手段】この発明は、液晶をはさ
んで互いに対向するガラス基板からなる液晶表示装置に
おいて、ガラス基板の外周エッジの角部に加熱器を接触
させ、前記角部を熔融させて面取りすることを特徴とす
る液晶表示装置のガラス基板の面取り方法を提供するも
のである。
According to the present invention, in a liquid crystal display device comprising glass substrates opposed to each other with a liquid crystal interposed therebetween, a heater is brought into contact with a corner of an outer peripheral edge of the glass substrate to melt the corner. An object of the present invention is to provide a method of chamfering a glass substrate of a liquid crystal display device, wherein the glass substrate is chamfered.

【0015】[0015]

【発明の実施の形態】この発明において、ガラス基板と
しては、例えば、ホウ珪酸ガラス、ソーダ・ライムガラ
ス、低アルカリガラス、無アルカリガラス、シリカガラ
スなどからなるものを用いることができる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a glass substrate made of, for example, borosilicate glass, soda-lime glass, low alkali glass, non-alkali glass, silica glass, or the like can be used.

【0016】対向するガラス基板にはさまれる(注入さ
れる)液晶としては、スメクティック液晶やネマティッ
ク液晶など、公知の液晶を広く用いることができ、特に
限定されない。
As the liquid crystal sandwiched (injected) between the opposing glass substrates, known liquid crystals such as a smectic liquid crystal and a nematic liquid crystal can be widely used and are not particularly limited.

【0017】ガラス基板の外周エッジの角部を熔融させ
て面取りする際、加熱器は前記角部を、そのガラス基板
のひずみ点温度よりも高く、かつ軟化温度よりも低い温
度に加熱する。ガラス基板の外周エッジの角部をこのよ
うな温度に加熱することにより、この角部に表面流動が
発生して面取りが行われる。例えば、ガラス基板にホウ
珪酸ガラスを用いた場合、好適な加熱温度は約650℃
〜800℃程度である。
When melting and chamfering the corner of the outer peripheral edge of the glass substrate, the heater heats the corner to a temperature higher than the strain point temperature of the glass substrate and lower than the softening temperature. By heating the corner of the outer peripheral edge of the glass substrate to such a temperature, surface flow occurs at the corner and chamfering is performed. For example, when borosilicate glass is used for a glass substrate, a suitable heating temperature is about 650 ° C.
800800 ° C.

【0018】この発明の液晶表示装置の面取り方法に用
いる加熱器は、細長い熱伝導体と、熱伝導体に設けられ
る熱源とを備え、熱伝導体の先端にはガラス基板の外周
エッジの角部に対応する溝が形成されていてもよい。
A heater used in the method for chamfering a liquid crystal display device according to the present invention includes an elongated heat conductor and a heat source provided on the heat conductor, and a tip of the heat conductor has a corner of an outer peripheral edge of a glass substrate. May be formed.

【0019】熱伝導体の溝は、ガラス基板の角部をこの
溝の形状に沿うように熔融させて面取りするために形成
されるものである。また、加熱器の幅がガラス基板の外
周エッジの長さよりも短い場合は、加熱器を外周エッジ
に接触させながら角部に沿って移動させる必要がある
が、熱伝導体の溝は加熱器を移動させる際のガイド的な
役割も果たす。このため、熱伝導体の溝の形状は特に限
定されるものではないが、例えば、U状やV状などを挙
げることができる。
The groove of the heat conductor is formed to melt and chamfer the corner of the glass substrate so as to conform to the shape of the groove. Also, when the width of the heater is shorter than the length of the outer peripheral edge of the glass substrate, it is necessary to move the heater along the corner while making contact with the outer peripheral edge. Also serves as a guide when moving. For this reason, the shape of the groove of the heat conductor is not particularly limited, and examples thereof include a U shape and a V shape.

【0020】例えば、熱伝導体の溝の形状をU状にした
場合は、面取りしたガラス基板の外周エッジの断面を弧
状又は半円状(以下、この明細書においてR形状と称す
る)とすることができる。
For example, when the shape of the groove of the heat conductor is U-shaped, the cross section of the outer peripheral edge of the chamfered glass substrate is formed in an arc shape or a semicircular shape (hereinafter referred to as an R shape in this specification). Can be.

【0021】加熱器の熱源としては電熱線や水素ガスバ
ーナを用いることができる。水素ガスバーナは、水素ガ
ス供給ノズルと、酸素ガス供給ノズルと、排気管とから
構成することができる。これらの熱源は、周囲の雰囲気
を汚染することがないので、汚染を極力避けなければな
らない液晶表示装置製造工場での使用に適している。
A heating wire or a hydrogen gas burner can be used as a heat source of the heater. The hydrogen gas burner can be composed of a hydrogen gas supply nozzle, an oxygen gas supply nozzle, and an exhaust pipe. Since these heat sources do not contaminate the surrounding atmosphere, they are suitable for use in a liquid crystal display device manufacturing factory where contamination must be avoided as much as possible.

【0022】また、この発明では、大きなガラス基板を
分断して多数個取りすることにより複数の液晶表示パネ
ルを製造する場合、分断した直後に上記加熱器を用いて
ガラス基板を面取りすることもできる。このようにする
と、後の工程でガラス基板の外周エッジの角部からクラ
ックが生ずることを防止できるようになるため、液晶表
示装置の製造工程中におけるガラス基板の面取り実施タ
イミングとしては最も好ましい。
In the present invention, when a plurality of liquid crystal display panels are manufactured by dividing a large glass substrate into a large number of pieces, the glass substrate can be chamfered using the heater immediately after the division. . This makes it possible to prevent the occurrence of cracks from the corners of the outer peripheral edge of the glass substrate in a later step, so that the timing of chamfering the glass substrate during the manufacturing process of the liquid crystal display device is most preferable.

【0023】上記タイミングで面取りが行えるのは、こ
の発明による面取り方法が従来の砥石による面取り方法
と異なり、面取りの際にガラス基板を汚染しないからで
ある。また、ガラス基板を汚染しないため、面取り後の
洗浄工程も不要となる。
The chamfering can be performed at the above timing because the chamfering method according to the present invention does not contaminate the glass substrate during the chamfering, unlike the conventional chamfering method using a grindstone. Further, since the glass substrate is not contaminated, a cleaning step after chamfering is not required.

【0024】更には、加熱器をガラス基板の外周エッジ
の角部に直接接触させて加熱することにより面取りする
ので、従来のレーザ光を用いた面取り方法のようにガラ
ス基板に形成された表示回路に損傷を与えることもな
い。
Further, since the chamfering is performed by directly contacting the heater with the corner of the outer peripheral edge of the glass substrate and heating the same, a display circuit formed on the glass substrate as in a conventional chamfering method using a laser beam is used. It does not damage the product.

【0025】[0025]

【実施例】以下に図面に示す実施例に基づいてこの発明
を詳述する。なお、この実施例によってこの発明が限定
されるものではない。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on embodiments shown in the drawings. The present invention is not limited by the embodiment.

【0026】この発明の実施例について図1〜図9に基
づいて説明する。まず、図1(a)に示されるように、
ホウ珪酸ガラスからなるガラス基板1a、1bを用意す
る。ガラス基板1a、1bは、共にd1が約550m
m、w1が約650mm、tが約1.1mmである。ガ
ラス基板1a、1bはそれぞれ片面にITOからなる表
示回路2とアルミニウムからなる入力用電極3が形成さ
れている。
An embodiment of the present invention will be described with reference to FIGS. First, as shown in FIG.
Glass substrates 1a and 1b made of borosilicate glass are prepared. Both the glass substrates 1a and 1b have d1 of about 550 m.
m and w1 are about 650 mm, and t is about 1.1 mm. On one side of each of the glass substrates 1a and 1b, a display circuit 2 made of ITO and an input electrode 3 made of aluminum are formed.

【0027】次に、直径約5μmのシリカからなるスペ
ーサ(図示せず)を散布してから、図1(b)に示され
るように、ガラス基板1aの表示回路2の周囲に熱硬化
型エポキシ樹脂(図示せず)を約1mmの幅で塗布し、
ガラス基板1bと位置合わせを行った後、図1(c)に
示されるように重ね合わせる。重ね合わせた後、温度約
160℃で約3時間程度圧着し、ガラス基板1a、1b
の貼り合わせを完了させる。
Next, a spacer (not shown) made of silica having a diameter of about 5 μm is sprayed, and as shown in FIG. 1B, a thermosetting epoxy is placed around the display circuit 2 of the glass substrate 1a. Apply resin (not shown) with a width of about 1 mm,
After the alignment with the glass substrate 1b, the substrates are overlaid as shown in FIG. After overlapping, pressure bonding is performed at a temperature of about 160 ° C. for about 3 hours, and the glass substrates 1 a and 1 b
Complete the lamination.

【0028】次に、図1(d)に示されるように、ダイ
ヤモンドからなるカッター4を用いて破線で示す所定ラ
イン5に深さ約200μm程度の傷を付ける。傷を付け
た後、所定ライン5に沿って力を加え、所定ライン5に
沿ってガラス基板1a、1bを4つに分断する。
Next, as shown in FIG. 1D, a predetermined line 5 indicated by a broken line is scratched to a depth of about 200 μm using a diamond cutter 4. After the scratch, a force is applied along the predetermined line 5 to divide the glass substrates 1a and 1b into four along the predetermined line 5.

【0029】分断されたガラス基板1a、1bのうちの
1つを図2に示す。また、図2に示すガラス基板1a、
1bのA部拡大図を図3に示す。図3に示されるように
ガラス基板1a、1bの外周エッジの角部6にはクラッ
ク7が発生している。
FIG. 2 shows one of the divided glass substrates 1a and 1b. Further, a glass substrate 1a shown in FIG.
FIG. 3 shows an enlarged view of a portion A of 1b. As shown in FIG. 3, cracks 7 have occurred at the corners 6 of the outer peripheral edges of the glass substrates 1a and 1b.

【0030】このため、図4に示すように、加熱器8の
熱伝導体12の先端に形成されたU状溝14をガラス基
板1a、1bの外周エッジの角部6に接触させながら外
周エッジの角部6の長手方向に沿って移動させて面取り
を行う。具体的には、図5に示すように、加熱器移動装
置21を用い、ステージ22に載置されたガラス基板1
a、1bの外周エッジの角部6に沿って加熱器8を移動
させるようにしてもよい。加熱器移動装置21は、第
1、第2および第3駆動軸(図示せず)を備えており、
図に矢印で示す方向、すなわち上下、左右および前後方
向へ自在に移動できる。第1、第2および第3駆動軸
は、スピードコントロール機能を備えたモーター(図示
せず)で駆動され、ガラス基板1a、1bと加熱器8と
の接触時間、加熱器8の移動速度等を精度良く制御でき
るようになっている。
For this reason, as shown in FIG. 4, the U-shaped groove 14 formed at the tip of the heat conductor 12 of the heater 8 is brought into contact with the corner 6 of the outer peripheral edge of the glass substrate 1a, 1b while the outer peripheral edge is formed. Is chamfered by moving along the longitudinal direction of the corner 6. Specifically, as shown in FIG. 5, using a heater moving device 21, a glass substrate 1 placed on a stage 22 is used.
The heater 8 may be moved along the corner 6 of the outer peripheral edge of a, 1b. The heater moving device 21 includes first, second, and third drive shafts (not shown),
It can be freely moved in the directions indicated by arrows in the figure, that is, in the vertical and horizontal directions and the front and rear directions. The first, second, and third drive shafts are driven by a motor (not shown) having a speed control function, and determine a contact time between the glass substrates 1a and 1b and the heater 8, a moving speed of the heater 8, and the like. It can be controlled with high accuracy.

【0031】この時、加熱器8はガラス基板1a、1b
の外周エッジの角部6が約650℃〜800℃となるよ
うに加熱している。というのは、ホウ珪酸ガラスのひず
み点温度は約600℃であり、軟化温度は約850℃だ
からである。
At this time, the heater 8 is connected to the glass substrates 1a and 1b.
Is heated so that the corner 6 of the outer peripheral edge of the above becomes about 650 ° C. to 800 ° C. This is because the borosilicate glass has a strain point temperature of about 600 ° C. and a softening temperature of about 850 ° C.

【0032】また、図3に示すクラック7は、深いもの
では約100μm〜150μm程度の深さがある。この
ため、図4に示すようにガラス基板1a、1bの外周エ
ッジの角部6は図4に示すrが約150μm〜200μ
m程度となるR形状に面取りされている。
The deep crack 7 shown in FIG. 3 has a depth of about 100 μm to 150 μm. For this reason, as shown in FIG. 4, the corners 6 of the outer peripheral edges of the glass substrates 1a and 1b have r shown in FIG.
It is chamfered into an R shape of about m.

【0033】また、図4に示すように入力用電極3の上
部に位置するガラス基板1bの外周エッジの角部6も面
取りされている。ガラス基板1bの外周エッジの角部6
は、従来の砥石による面取り方法では面取りしずらかっ
た箇所である。
As shown in FIG. 4, the corner 6 of the outer peripheral edge of the glass substrate 1b located above the input electrode 3 is also chamfered. Corner 6 of outer peripheral edge of glass substrate 1b
Are locations where chamfering was difficult with the conventional chamfering method using a grindstone.

【0034】このように面取りを行った後は、従来の製
造方法と同様にベルジャー等を用いて液晶の注入を行
い、液晶表示装置を完成させる。
After the chamfering is performed in this manner, liquid crystal is injected using a bell jar or the like in the same manner as in a conventional manufacturing method to complete a liquid crystal display device.

【0035】次に、図6〜図8に基づいて上述の実施例
に係る液晶表示装置の製造方法で用いた加熱器8につい
て説明する。図6は、加熱器8の概略構成を示す説明図
である。図6に示すように加熱器8は、細長い熱伝導体
12と熱源13とを備え、細長い熱伝導体12の先端に
はU状溝14が形成されている。熱伝導体12と熱源1
3は、熱絶縁体からなる本体15に収容されている。熱
伝導体12はセラミックで形成され、d2は約2mmで
ある。また、熱伝導体12の基板1a又は1bと接触す
る幅、つまり、図4に示すw2は約10mmである。な
お、図4中のw2の寸法は特に限定されないが、約3m
m〜50mm程度とすることができる。また、熱伝導体
12は表面が電気的に絶縁された銅金属などの金属から
形成されてもよい。
Next, the heater 8 used in the method of manufacturing the liquid crystal display device according to the above embodiment will be described with reference to FIGS. FIG. 6 is an explanatory diagram illustrating a schematic configuration of the heater 8. As shown in FIG. 6, the heater 8 includes an elongated heat conductor 12 and a heat source 13, and a U-shaped groove 14 is formed at the tip of the elongated heat conductor 12. Heat conductor 12 and heat source 1
3 is housed in a main body 15 made of a thermal insulator. The heat conductor 12 is formed of ceramic, and d2 is about 2 mm. Further, the width of the heat conductor 12 in contact with the substrate 1a or 1b, that is, w2 shown in FIG. 4 is about 10 mm. Although the dimension of w2 in FIG. 4 is not particularly limited, it is about 3 m
m to about 50 mm. Further, the heat conductor 12 may be formed of a metal such as copper metal whose surface is electrically insulated.

【0036】熱伝導体12の先端の拡大図を図7に示
す。図7に示すように、熱伝導体12の先端に形成され
たU状溝14は、図7に示すd3が400μm、d4が
150μmの寸法で形成されている。
FIG. 7 is an enlarged view of the tip of the heat conductor 12. As shown in FIG. 7, the U-shaped groove 14 formed at the tip of the heat conductor 12 is formed such that d3 shown in FIG. 7 is 400 μm and d4 is 150 μm.

【0037】一方、図6に示される熱源13はニクロム
線であり、熱伝導体12の周囲に巻き付けられている。
加熱器8に求められる発熱量は約11J/sである。こ
の値は次のようにして求めることができる。例えば、図
4に示すrが200μm(0.02cm)となるように
外周エッジの角部6を1cmにわたって面取りすると仮
定する。また、面取りの対象となるガラス基板の材質は
ホウ珪酸ガラスであり、加熱器8やガラス基板1a、1
bでの熱的ロスはないものと仮定する。ホウ珪酸ガラス
の熱伝導度k=0.015J/cm・sec・℃とし、
縁部6を深さ0.02cmまで800℃に加熱するとす
ると、必要な発熱量Cは次の式で表される。 C=(T1 −T0 )/(L/kA)
On the other hand, the heat source 13 shown in FIG. 6 is a nichrome wire, which is wound around the heat conductor 12.
The heating value required for the heater 8 is about 11 J / s. This value can be determined as follows. For example, it is assumed that the corner 6 of the outer peripheral edge is chamfered over 1 cm so that r shown in FIG. 4 is 200 μm (0.02 cm). The material of the glass substrate to be chamfered is borosilicate glass, and the heater 8 and the glass substrates 1a, 1
Assume that there is no thermal loss at b. The thermal conductivity of the borosilicate glass is set to k = 0.015 J / cm · sec · ° C.
If the edge 6 is heated to 800 ° C. to a depth of 0.02 cm, the required heat value C is expressed by the following equation. C = (T 1 −T 0 ) / (L / kA)

【0038】なお、ここでT1 は到達温度(800
℃)、T0 は初期の温度(ここでは25℃とする)、L
は熱を加える深さ(0.02cm)、kは熱伝導度
(0.015)、Aは熱を加える面積(1cm×0.0
2cm=0.02cm2 )である。従って加熱器に必要
となる発熱量Cは、 C= 775/(0.02/0.0003)=775/
66.6=11.7 となる。
Here, T 1 is the ultimate temperature (800
C), T 0 is the initial temperature (here, 25 ° C.), L
Is the depth to which heat is applied (0.02 cm), k is the thermal conductivity (0.015), A is the area to which heat is applied (1 cm × 0.0
2 cm = 0.02 cm 2 ). Therefore, the calorific value C required for the heater is: C = 775 / (0.02 / 0.0003) = 775 /
66.6 = 11.7.

【0039】つまり、加熱器8が約11J/sの発熱量
を備える場合、加熱器8をガラス基板1a、1bの外周
エッジの角部6に沿って約1cm/sの速さで移動させ
れば、ガラス基板1a、1bの外周エッジの角部6を熔
融させて面取りすることができる。また、ガラス基板1
a、1bの材質が変更された場合には、上記の式に基づ
いて、加熱器8に必要な発熱量を算出し、加熱器の仕様
変更又は出力の調整を行うとよい。
That is, when the heater 8 has a heating value of about 11 J / s, the heater 8 is moved at a speed of about 1 cm / s along the corner 6 of the outer peripheral edge of the glass substrates 1a and 1b. For example, the corners 6 of the outer peripheral edges of the glass substrates 1a and 1b can be melted and chamfered. Also, the glass substrate 1
When the materials of a and 1b are changed, it is preferable to calculate the calorific value required for the heater 8 based on the above equation, and change the specifications of the heater or adjust the output.

【0040】また、熱源13を水素ガスバーナとした例
を図8に示す。図8に示すように熱源13は、水素ガス
供給ノズル16と、酸素ガス供給ノズル17と、排気管
18とから構成された水素ガスバーナである。その他の
構成や各部の寸法は図6及び図7に示す加熱器と同一で
あるので説明を省略する。
FIG. 8 shows an example in which the heat source 13 is a hydrogen gas burner. As shown in FIG. 8, the heat source 13 is a hydrogen gas burner including a hydrogen gas supply nozzle 16, an oxygen gas supply nozzle 17, and an exhaust pipe 18. Other configurations and dimensions of each part are the same as those of the heater shown in FIGS.

【0041】この発明の液晶表示装置の製造方法に用い
る加熱器8では、上述のように熱源13にニクロム線や
水素ガスバーナを用いるが、これらの熱源13は工場内
の雰囲気を汚染しないので、汚染を極力避けなければな
らない液晶表示装置製造工場での使用に適している。
In the heater 8 used in the method of manufacturing the liquid crystal display device according to the present invention, a nichrome wire or a hydrogen gas burner is used as the heat source 13 as described above. However, since these heat sources 13 do not contaminate the atmosphere in the factory, they are contaminated. It is suitable for use in a liquid crystal display device manufacturing plant in which it is necessary to avoid as much as possible.

【0042】[0042]

【発明の効果】この発明によれば、ガラス基板の外周エ
ッジの角部へ加熱器を接触させ、前記エッジ部を前記角
部を熔融させて面取りするので、ガラス基板を汚染する
ことなくガラス基板分断直後にガラス基板の全ての外周
エッジの角部に対して面取りでき、更にはガラス基板に
設けられた表示回路等に損傷を与えることもない液晶表
示装置のガラス基板の面取方法およびその方法に用いら
れる加熱器を提供することができる。
According to the present invention, the heater is brought into contact with the corner of the outer peripheral edge of the glass substrate, and the edge is melted and chamfered, so that the glass substrate is not contaminated. A method and a method for chamfering a glass substrate of a liquid crystal display device which can be chamfered immediately after the division and all the corners of the outer peripheral edge of the glass substrate without damaging a display circuit or the like provided on the glass substrate. Can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明による液晶表示装置のガラス基板の面
取方法を利用する液晶表示装置の製造方法を示す工程図
である。
FIG. 1 is a process diagram showing a method for manufacturing a liquid crystal display device using a method for chamfering a glass substrate of a liquid crystal display device according to the present invention.

【図2】図1(d)に示される分断されたガラス基板の
うちの1つを示す斜視図である。
FIG. 2 is a perspective view showing one of the divided glass substrates shown in FIG. 1 (d).

【図3】図2に示されるガラス基板のA部拡大図であ
る。
FIG. 3 is an enlarged view of a portion A of the glass substrate shown in FIG. 2;

【図4】図3に示されるガラス基板に加熱器を用いて面
取りしているところを示す斜視図である。
FIG. 4 is a perspective view showing that the glass substrate shown in FIG. 3 is chamfered using a heater.

【図5】加熱器移動装置を用いて面取りしているところ
を示す斜視図である。
FIG. 5 is a perspective view showing chamfering using a heater moving device.

【図6】熱源にニクロム線を用いた加熱器の概略構成を
示す説明図である。
FIG. 6 is an explanatory diagram showing a schematic configuration of a heater using a nichrome wire as a heat source.

【図7】図6に示す加熱器の先端部の拡大図である。FIG. 7 is an enlarged view of a tip portion of the heater shown in FIG.

【図8】熱源に水素ガスバーナを用いた加熱器の概略構
成を示す説明図である。
FIG. 8 is an explanatory diagram showing a schematic configuration of a heater using a hydrogen gas burner as a heat source.

【符号の説明】[Explanation of symbols]

1a、1b・・・ガラス基板 3・・・入力用電極 6・・・外周エッジの角部 8・・・加熱器 12・・・熱伝導体 14・・・U状溝 1a, 1b: Glass substrate 3: Input electrode 6: Corner of outer peripheral edge 8: Heater 12: Thermal conductor 14: U-shaped groove

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 液晶をはさんで互いに対向するガラス基
板からなる液晶表示装置において、ガラス基板の外周エ
ッジの角部に加熱器を接触させ、前記角部を熔融させて
面取りすることを特徴とする液晶表示装置のガラス基板
の面取り方法。
1. A liquid crystal display device comprising glass substrates opposed to each other with a liquid crystal interposed therebetween, wherein a heater is brought into contact with a corner of an outer peripheral edge of the glass substrate, and the corner is melted and chamfered. Method for chamfering a glass substrate of a liquid crystal display device.
【請求項2】 請求項1に記載の液晶表示装置の面取り
方法に用いる加熱器であって、細長い熱伝導体と、熱伝
導体に設けられる熱源とを備え、熱伝導体の先端にはガ
ラス基板の外周エッジの角部に対応する溝が形成されて
いることを特徴とする加熱器。
2. A heater for use in the method for chamfering a liquid crystal display device according to claim 1, comprising a long and thin heat conductor, a heat source provided on the heat conductor, and a tip of the heat conductor. A heater, wherein a groove corresponding to a corner of an outer peripheral edge of a substrate is formed.
【請求項3】 熱源が、電熱線である請求項2に記載の
加熱器。
3. The heater according to claim 2, wherein the heat source is a heating wire.
【請求項4】 熱源が、水素ガスバーナである請求項2
に記載の加熱器。
4. The heat source is a hydrogen gas burner.
A heater according to claim 1.
【請求項5】 水素ガスバーナが、水素ガス供給ノズル
と、酸素ガス供給ノズルと、排気管とを備える請求項4
に記載の加熱器。
5. The hydrogen gas burner includes a hydrogen gas supply nozzle, an oxygen gas supply nozzle, and an exhaust pipe.
A heater according to claim 1.
JP2000112247A 2000-04-13 2000-04-13 Method for chamfering glass substrate of liquid crystal display device and heater used in the method Expired - Fee Related JP3719904B2 (en)

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