JP2001284599A5 - - Google Patents
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- JP2001284599A5 JP2001284599A5 JP2000100437A JP2000100437A JP2001284599A5 JP 2001284599 A5 JP2001284599 A5 JP 2001284599A5 JP 2000100437 A JP2000100437 A JP 2000100437A JP 2000100437 A JP2000100437 A JP 2000100437A JP 2001284599 A5 JP2001284599 A5 JP 2001284599A5
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Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000100437A JP4698793B2 (ja) | 2000-04-03 | 2000-04-03 | 半導体装置 |
| US09/677,881 US6455894B1 (en) | 2000-04-03 | 2000-10-03 | Semiconductor device, method of manufacturing the same and method of arranging dummy region |
| FR0014712A FR2807211B1 (fr) | 2000-04-03 | 2000-11-15 | Dispositif semiconducteur de type soi et procede de fabricat ion de ce dispositif |
| TW089125596A TW477067B (en) | 2000-04-03 | 2000-12-01 | Semiconductor device, method of manufacturing the same and method of arranging dummy region |
| DE10059620A DE10059620A1 (de) | 2000-04-03 | 2000-12-01 | Halbleitervorrichtung,Verfahren zum Herstellen derselben und Verfahren zum Anordnen eines Dummybereiches |
| KR10-2000-0072678A KR100373287B1 (ko) | 2000-04-03 | 2000-12-02 | 반도체 장치, 그 제조 방법 및 더미 영역의 배치 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000100437A JP4698793B2 (ja) | 2000-04-03 | 2000-04-03 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011015269A Division JP5269924B2 (ja) | 2011-01-27 | 2011-01-27 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001284599A JP2001284599A (ja) | 2001-10-12 |
| JP2001284599A5 true JP2001284599A5 (US06573293-20030603-C00009.png) | 2007-05-24 |
| JP4698793B2 JP4698793B2 (ja) | 2011-06-08 |
Family
ID=18614644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000100437A Expired - Fee Related JP4698793B2 (ja) | 2000-04-03 | 2000-04-03 | 半導体装置 |
Country Status (6)
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002158359A (ja) * | 2000-11-21 | 2002-05-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP3719650B2 (ja) * | 2000-12-22 | 2005-11-24 | 松下電器産業株式会社 | 半導体装置 |
| US6787422B2 (en) * | 2001-01-08 | 2004-09-07 | Chartered Semiconductor Manufacturing Ltd. | Method of body contact for SOI mosfet |
| JP2002208705A (ja) | 2001-01-09 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP2002246600A (ja) * | 2001-02-13 | 2002-08-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| KR100366923B1 (ko) * | 2001-02-19 | 2003-01-06 | 삼성전자 주식회사 | 에스오아이 기판 및 이의 제조방법 |
| US6830976B2 (en) | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
| KR100422468B1 (ko) * | 2001-07-31 | 2004-03-11 | 삼성전자주식회사 | 에스 오 아이 소자 및 그 제조방법 |
| US6982474B2 (en) | 2002-06-25 | 2006-01-03 | Amberwave Systems Corporation | Reacted conductive gate electrodes |
| KR100897474B1 (ko) * | 2002-06-29 | 2009-05-14 | 매그나칩 반도체 유한회사 | 바이폴라 트랜지스터의 제조방법 |
| EP1602125B1 (en) * | 2003-03-07 | 2019-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Shallow trench isolation process |
| JP4371710B2 (ja) * | 2003-06-09 | 2009-11-25 | キヤノン株式会社 | 半導体基体、半導体装置及びこれらの製造方法 |
| JP4651920B2 (ja) * | 2003-07-15 | 2011-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4561060B2 (ja) * | 2003-07-28 | 2010-10-13 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| US6930351B2 (en) | 2003-08-14 | 2005-08-16 | Renesas Technology Corp. | Semiconductor device with dummy gate electrode |
| US20050056881A1 (en) * | 2003-09-15 | 2005-03-17 | Yee-Chia Yeo | Dummy pattern for silicide gate electrode |
| US7109532B1 (en) * | 2003-12-23 | 2006-09-19 | Lee Zachary K | High Ion/Ioff SOI MOSFET using body voltage control |
| DE102004048096A1 (de) * | 2004-09-30 | 2006-04-27 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur |
| JP5172083B2 (ja) * | 2004-10-18 | 2013-03-27 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法、並びにメモリ回路 |
| US7883979B2 (en) * | 2004-10-26 | 2011-02-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing a semiconductor device with reduced floating body effect |
| US20060091423A1 (en) * | 2004-10-29 | 2006-05-04 | Peter Poechmueller | Layer fill for homogenous technology processing |
| KR100641555B1 (ko) * | 2004-12-30 | 2006-10-31 | 동부일렉트로닉스 주식회사 | 트랜치 소스 구조를 갖는 수평형 디모스 트랜지스터 |
| JP5091462B2 (ja) * | 2006-01-19 | 2012-12-05 | パナソニック株式会社 | セルおよび半導体装置 |
| US20090087956A1 (en) * | 2007-09-27 | 2009-04-02 | Texas Instruments Incorporated | Dummy Contact Fill to Improve Post Contact Chemical Mechanical Polish Topography |
| KR100967037B1 (ko) * | 2007-10-17 | 2010-06-29 | 주식회사 하이닉스반도체 | 퓨즈 박스 및 그 형성 방법 |
| US7880229B2 (en) * | 2007-10-18 | 2011-02-01 | Globalfoundries Inc. | Body tie test structure for accurate body effect measurement |
| US7994577B2 (en) * | 2008-07-18 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD protection structures on SOI substrates |
| CN101872737A (zh) * | 2010-01-28 | 2010-10-27 | 中国科学院上海微系统与信息技术研究所 | 一种抑制soi浮体效应的mos结构及其制作方法 |
| US8598656B2 (en) * | 2010-03-08 | 2013-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus of forming ESD protection device |
| KR101804420B1 (ko) * | 2010-06-14 | 2018-01-11 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| US8217464B2 (en) * | 2010-08-06 | 2012-07-10 | Altera Corporation | N-well/P-well strap structures |
| JP2011146733A (ja) * | 2011-03-18 | 2011-07-28 | Renesas Electronics Corp | 半導体装置の製造方法 |
| US8796855B2 (en) | 2012-01-13 | 2014-08-05 | Freescale Semiconductor, Inc. | Semiconductor devices with nonconductive vias |
| US9143123B2 (en) * | 2012-07-10 | 2015-09-22 | Infineon Technologies Ag | RF switch, mobile communication device and method for switching an RF signal |
| CN105633134B (zh) * | 2014-10-28 | 2019-08-27 | 中芯国际集成电路制造(上海)有限公司 | 半导体栅极版图及其修正方法、半导体结构形成方法 |
| FR3036846B1 (fr) * | 2015-05-29 | 2018-06-15 | Stmicroelectronics (Crolles 2) Sas | Procede d'isolation locale entre des transistors realises sur un substrat soi, en particulier fdsoi, et circuit integre correspondant |
| KR102420539B1 (ko) * | 2015-08-26 | 2022-07-14 | 에스케이하이닉스 주식회사 | 반도체 장치 |
| US10249621B2 (en) * | 2016-12-15 | 2019-04-02 | Texas Instruments Incorporated | Dummy contacts to mitigate plasma charging damage to gate dielectrics |
| KR101927667B1 (ko) * | 2018-03-15 | 2018-12-10 | 한국과학기술원 | 단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 단위 모스펫 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5463238A (en) * | 1992-02-25 | 1995-10-31 | Seiko Instruments Inc. | CMOS structure with parasitic channel prevention |
| JPH0832039A (ja) | 1994-07-12 | 1996-02-02 | Nippondenso Co Ltd | 半導体装置およびその製造方法 |
| US5910017A (en) * | 1996-02-21 | 1999-06-08 | Texas Instruments Incorporated | Increasing uniformity in a refill layer thickness for a semiconductor device |
| US5767549A (en) * | 1996-07-03 | 1998-06-16 | International Business Machines Corporation | SOI CMOS structure |
| JPH1041406A (ja) * | 1996-07-18 | 1998-02-13 | Mitsubishi Electric Corp | 半導体装置 |
| US6130139A (en) * | 1996-11-26 | 2000-10-10 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing trench-isolated semiconductor device |
| JP3648343B2 (ja) * | 1997-01-14 | 2005-05-18 | 株式会社東芝 | 半導体装置 |
| JP3371756B2 (ja) | 1997-05-16 | 2003-01-27 | 株式会社デンソー | 半導体基板の製造方法 |
| US6020616A (en) * | 1998-03-31 | 2000-02-01 | Vlsi Technology, Inc. | Automated design of on-chip capacitive structures for suppressing inductive noise |
| KR100296130B1 (ko) * | 1998-06-29 | 2001-08-07 | 박종섭 | 이중막 실리콘웨이퍼를 이용한 금속-산화막-반도체 전계효과트랜지스터 제조방법 |
| KR100272166B1 (ko) * | 1998-06-30 | 2000-11-15 | 윤종용 | 소자분리영역에 형성된 더미 도전층을 갖춘반도체소자 및 그제조방법 |
| JP4540146B2 (ja) * | 1998-12-24 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2000216388A (ja) * | 1999-01-21 | 2000-08-04 | Mitsubishi Electric Corp | 半導体装置 |
| JP2001077368A (ja) * | 1999-09-03 | 2001-03-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US6281593B1 (en) * | 1999-12-06 | 2001-08-28 | International Business Machines Corporation | SOI MOSFET body contact and method of fabrication |
-
2000
- 2000-04-03 JP JP2000100437A patent/JP4698793B2/ja not_active Expired - Fee Related
- 2000-10-03 US US09/677,881 patent/US6455894B1/en not_active Expired - Fee Related
- 2000-11-15 FR FR0014712A patent/FR2807211B1/fr not_active Expired - Fee Related
- 2000-12-01 DE DE10059620A patent/DE10059620A1/de not_active Ceased
- 2000-12-01 TW TW089125596A patent/TW477067B/zh not_active IP Right Cessation
- 2000-12-02 KR KR10-2000-0072678A patent/KR100373287B1/ko not_active IP Right Cessation
