JP2001111056A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2001111056A
JP2001111056A JP28526999A JP28526999A JP2001111056A JP 2001111056 A JP2001111056 A JP 2001111056A JP 28526999 A JP28526999 A JP 28526999A JP 28526999 A JP28526999 A JP 28526999A JP 2001111056 A JP2001111056 A JP 2001111056A
Authority
JP
Japan
Prior art keywords
region
impurity
conductivity type
insulating film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28526999A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001111056A5 (https=
Inventor
Tatsuya Kunikiyo
辰也 國清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP28526999A priority Critical patent/JP2001111056A/ja
Priority to US09/548,311 priority patent/US6545318B1/en
Priority to KR10-2000-0058446A priority patent/KR100397096B1/ko
Priority to TW089120743A priority patent/TW468279B/zh
Priority to CNB001306316A priority patent/CN1157794C/zh
Publication of JP2001111056A publication Critical patent/JP2001111056A/ja
Publication of JP2001111056A5 publication Critical patent/JP2001111056A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP28526999A 1999-10-06 1999-10-06 半導体装置およびその製造方法 Pending JP2001111056A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP28526999A JP2001111056A (ja) 1999-10-06 1999-10-06 半導体装置およびその製造方法
US09/548,311 US6545318B1 (en) 1999-10-06 2000-04-12 Semiconductor device and manufacturing method thereof
KR10-2000-0058446A KR100397096B1 (ko) 1999-10-06 2000-10-05 반도체 장치 및 그 제조 방법
TW089120743A TW468279B (en) 1999-10-06 2000-10-05 Semiconductor device and manufacturing method thereof
CNB001306316A CN1157794C (zh) 1999-10-06 2000-10-08 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28526999A JP2001111056A (ja) 1999-10-06 1999-10-06 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2001111056A true JP2001111056A (ja) 2001-04-20
JP2001111056A5 JP2001111056A5 (https=) 2006-11-16

Family

ID=17689325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28526999A Pending JP2001111056A (ja) 1999-10-06 1999-10-06 半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US6545318B1 (https=)
JP (1) JP2001111056A (https=)
KR (1) KR100397096B1 (https=)
CN (1) CN1157794C (https=)
TW (1) TW468279B (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787422B2 (en) * 2001-01-08 2004-09-07 Chartered Semiconductor Manufacturing Ltd. Method of body contact for SOI mosfet
US6794717B2 (en) * 2001-02-13 2004-09-21 Renesas Technology Corp. Semiconductor device and method of manufacturing the same
US6875663B2 (en) 2001-12-20 2005-04-05 Renesas Technology Corp. Semiconductor device having a trench isolation and method of fabricating the same
KR100496244B1 (ko) * 2002-06-10 2005-06-17 엔이씨 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2011029610A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2011029611A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4322453B2 (ja) * 2001-09-27 2009-09-02 株式会社東芝 半導体装置およびその製造方法
US20040060899A1 (en) * 2002-10-01 2004-04-01 Applied Materials, Inc. Apparatuses and methods for treating a silicon film
JP2004221301A (ja) * 2003-01-15 2004-08-05 Seiko Instruments Inc 半導体装置とその製造方法
EP1636851A1 (en) * 2003-06-11 2006-03-22 Koninklijke Philips Electronics N.V. Prevention of a parasitic channel in an integrated soi process
US20050072975A1 (en) * 2003-10-02 2005-04-07 Shiao-Shien Chen Partially depleted soi mosfet device
KR100574971B1 (ko) * 2004-02-17 2006-05-02 삼성전자주식회사 멀티-게이트 구조의 반도체 소자 및 그 제조 방법
US6998684B2 (en) * 2004-03-31 2006-02-14 International Business Machines Corporation High mobility plane CMOS SOI
WO2005106961A1 (en) * 2004-04-28 2005-11-10 Semiconductor Energy Laboratory Co., Ltd. Mos capacitor and semiconductor device
JP3898715B2 (ja) * 2004-09-09 2007-03-28 株式会社東芝 半導体装置およびその製造方法
JP2007184553A (ja) * 2005-12-06 2007-07-19 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US7566630B2 (en) * 2006-01-18 2009-07-28 Intel Corporation Buried silicon dioxide / silicon nitride bi-layer insulators and methods of fabricating the same
EP1863090A1 (en) 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20080217727A1 (en) * 2007-03-11 2008-09-11 Skyworks Solutions, Inc. Radio frequency isolation for SOI transistors
CN101872737A (zh) * 2010-01-28 2010-10-27 中国科学院上海微系统与信息技术研究所 一种抑制soi浮体效应的mos结构及其制作方法
US8461005B2 (en) * 2010-03-03 2013-06-11 United Microelectronics Corp. Method of manufacturing doping patterns
KR101870809B1 (ko) * 2016-06-21 2018-08-02 현대오트론 주식회사 전력 반도체 소자

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154758A (ja) * 1997-08-01 1999-02-26 Hitachi Ltd 半導体集積回路装置およびその製造方法
WO1999027585A1 (en) * 1997-11-21 1999-06-03 Hitachi, Ltd. Semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124243A (ja) 1982-01-21 1983-07-23 Toshiba Corp 半導体装置の製造方法
US5145802A (en) * 1991-11-12 1992-09-08 United Technologies Corporation Method of making SOI circuit with buried connectors
US5463238A (en) * 1992-02-25 1995-10-31 Seiko Instruments Inc. CMOS structure with parasitic channel prevention
US5359219A (en) * 1992-12-04 1994-10-25 Texas Instruments Incorporated Silicon on insulator device comprising improved substrate doping
JP2806277B2 (ja) * 1994-10-13 1998-09-30 日本電気株式会社 半導体装置及びその製造方法
JPH08181316A (ja) * 1994-12-22 1996-07-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3462301B2 (ja) 1995-06-16 2003-11-05 三菱電機株式会社 半導体装置及びその製造方法
JP3376204B2 (ja) 1996-02-15 2003-02-10 株式会社東芝 半導体装置
US5767549A (en) * 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
US5770875A (en) 1996-09-16 1998-06-23 International Business Machines Corporation Large value capacitor for SOI
US6133608A (en) * 1997-04-23 2000-10-17 International Business Machines Corporation SOI-body selective link method and apparatus
KR100562539B1 (ko) * 1997-12-19 2006-03-22 어드밴스드 마이크로 디바이시즈, 인코포레이티드 벌크 씨모스 구조와 양립 가능한 에스오아이 구조
US6121659A (en) * 1998-03-27 2000-09-19 International Business Machines Corporation Buried patterned conductor planes for semiconductor-on-insulator integrated circuit
US6072217A (en) * 1998-06-11 2000-06-06 Sun Microsystems, Inc. Tunable threshold SOI device using isolated well structure for back gate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154758A (ja) * 1997-08-01 1999-02-26 Hitachi Ltd 半導体集積回路装置およびその製造方法
WO1999027585A1 (en) * 1997-11-21 1999-06-03 Hitachi, Ltd. Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787422B2 (en) * 2001-01-08 2004-09-07 Chartered Semiconductor Manufacturing Ltd. Method of body contact for SOI mosfet
US6794717B2 (en) * 2001-02-13 2004-09-21 Renesas Technology Corp. Semiconductor device and method of manufacturing the same
US7256463B2 (en) 2001-02-13 2007-08-14 Renesas Technology Corp. Semiconductor device having SOI structure including a load resistor of an sram memory cell
US6875663B2 (en) 2001-12-20 2005-04-05 Renesas Technology Corp. Semiconductor device having a trench isolation and method of fabricating the same
US7183167B2 (en) 2001-12-20 2007-02-27 Renesas Technology Corp. Semiconductor device having a trench isolation and method of fabricating the same
US7494883B2 (en) 2001-12-20 2009-02-24 Renesas Technology Corp. Semiconductor device having a trench isolation and method of fabricating the same
KR100496244B1 (ko) * 2002-06-10 2005-06-17 엔이씨 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2011029610A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2011029611A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Also Published As

Publication number Publication date
CN1157794C (zh) 2004-07-14
US6545318B1 (en) 2003-04-08
CN1292572A (zh) 2001-04-25
KR20010050860A (ko) 2001-06-25
TW468279B (en) 2001-12-11
KR100397096B1 (ko) 2003-09-06

Similar Documents

Publication Publication Date Title
JP2001111056A (ja) 半導体装置およびその製造方法
US6252280B1 (en) Semiconductor device and manufacturing method thereof
US6515320B1 (en) Semiconductor device and method of manufacturing the same including thicker insulating layer on lower part of electrode
JP4457688B2 (ja) 半導体装置
JPH1093093A (ja) 半導体装置およびその製造方法
JP2001352042A (ja) 半導体装置およびその製造方法
JP2002134627A (ja) 半導体装置及びその製造方法
JP4832629B2 (ja) 半導体装置
JP3716406B2 (ja) 絶縁ゲート型半導体装置及びその製造方法
JP2005175306A (ja) 半導体集積回路装置及びその製造方法
JP2001291779A (ja) 半導体装置およびその製造方法
JP3270250B2 (ja) 半導体記憶装置及びその製造方法
US20070200185A1 (en) Semiconductor device and method for fabricating the same
JPWO2003069675A1 (ja) 半導体装置の製造方法
JPH11284146A (ja) 半導体記憶装置及びその製造方法
JP2005197462A (ja) 半導体装置及びその製造方法
JP2003218356A (ja) Ｓｏｉ型半導体装置の製造方法、設計方法およびｓｏｉ型半導体装置
JPH07273330A (ja) 半導体装置及びその製造方法
JP2000332250A (ja) 半導体装置およびその製造方法
JP2003124338A (ja) 半導体装置及びその製造方法
JPH10163338A (ja) 半導体装置とその製造方法
JP2002289698A (ja) 半導体装置及びその製造方法と携帯電子機器
JP2002343964A (ja) 半導体装置及びその製造方法
JP2001028438A (ja) 半導体装置とその製造方法
JP2006228950A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20060307

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060929

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060929

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091029

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091124

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100525