JP2000517102A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000517102A5 JP2000517102A5 JP1998510718A JP51071898A JP2000517102A5 JP 2000517102 A5 JP2000517102 A5 JP 2000517102A5 JP 1998510718 A JP1998510718 A JP 1998510718A JP 51071898 A JP51071898 A JP 51071898A JP 2000517102 A5 JP2000517102 A5 JP 2000517102A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Description
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/699,249 | 1996-08-19 | ||
US08/699,249 US5882993A (en) | 1996-08-19 | 1996-08-19 | Integrated circuit with differing gate oxide thickness and process for making same |
PCT/US1997/009638 WO1998008254A1 (en) | 1996-08-19 | 1997-05-29 | Integrated circuit with differing gate oxide thickness and process for making same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000517102A JP2000517102A (ja) | 2000-12-19 |
JP2000517102A5 true JP2000517102A5 (ja) | 2004-12-09 |
Family
ID=24808513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10510718A Pending JP2000517102A (ja) | 1996-08-19 | 1997-05-29 | 異なるゲート酸化膜厚さの集積回路およびその生成のための処理方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US5882993A (ja) |
EP (1) | EP0944921B1 (ja) |
JP (1) | JP2000517102A (ja) |
KR (1) | KR100517677B1 (ja) |
DE (1) | DE69710609T2 (ja) |
WO (1) | WO1998008254A1 (ja) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0136932B1 (ko) * | 1994-07-30 | 1998-04-24 | 문정환 | 반도체 소자 및 그의 제조방법 |
US5882993A (en) | 1996-08-19 | 1999-03-16 | Advanced Micro Devices, Inc. | Integrated circuit with differing gate oxide thickness and process for making same |
US6033943A (en) * | 1996-08-23 | 2000-03-07 | Advanced Micro Devices, Inc. | Dual gate oxide thickness integrated circuit and process for making same |
US6080682A (en) | 1997-12-18 | 2000-06-27 | Advanced Micro Devices, Inc. | Methodology for achieving dual gate oxide thicknesses |
US5962914A (en) * | 1998-01-14 | 1999-10-05 | Advanced Micro Devices, Inc. | Reduced bird's beak field oxidation process using nitrogen implanted into active region |
US5963803A (en) * | 1998-02-02 | 1999-10-05 | Advanced Micro Devices, Inc. | Method of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widths |
KR100273281B1 (ko) * | 1998-02-27 | 2000-12-15 | 김영환 | 반도체 소자의 절연막 형성 방법 |
US6531364B1 (en) | 1998-08-05 | 2003-03-11 | Advanced Micro Devices, Inc. | Advanced fabrication technique to form ultra thin gate dielectric using a sacrificial polysilicon seed layer |
US6051865A (en) * | 1998-11-09 | 2000-04-18 | Advanced Micro Devices, Inc. | Transistor having a barrier layer below a high permittivity gate dielectric |
US6087236A (en) * | 1998-11-24 | 2000-07-11 | Intel Corporation | Integrated circuit with multiple gate dielectric structures |
DE19939597B4 (de) * | 1999-08-20 | 2006-07-20 | Infineon Technologies Ag | Verfahren zur Herstellung einer mikroelektronischen Struktur mit verbesserter Gatedielektrikahomogenität |
US6235591B1 (en) | 1999-10-25 | 2001-05-22 | Chartered Semiconductor Manufacturing Company | Method to form gate oxides of different thicknesses on a silicon substrate |
US20030235936A1 (en) * | 1999-12-16 | 2003-12-25 | Snyder John P. | Schottky barrier CMOS device and method |
US6303479B1 (en) * | 1999-12-16 | 2001-10-16 | Spinnaker Semiconductor, Inc. | Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts |
US6583011B1 (en) | 2000-01-11 | 2003-06-24 | Chartered Semiconductor Manufacturing Ltd. | Method for forming damascene dual gate for improved oxide uniformity and control |
US6407008B1 (en) | 2000-05-05 | 2002-06-18 | Integrated Device Technology, Inc. | Method of forming an oxide layer |
US6352885B1 (en) | 2000-05-25 | 2002-03-05 | Advanced Micro Devices, Inc. | Transistor having a peripherally increased gate insulation thickness and a method of fabricating the same |
JP2001351989A (ja) * | 2000-06-05 | 2001-12-21 | Nec Corp | 半導体装置の製造方法 |
US6339001B1 (en) | 2000-06-16 | 2002-01-15 | International Business Machines Corporation | Formulation of multiple gate oxides thicknesses without exposing gate oxide or silicon surface to photoresist |
US6417037B1 (en) | 2000-07-18 | 2002-07-09 | Chartered Semiconductor Manufacturing Ltd. | Method of dual gate process |
US6503851B2 (en) | 2000-08-31 | 2003-01-07 | Micron Technology, Inc. | Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off |
US6368986B1 (en) | 2000-08-31 | 2002-04-09 | Micron Technology, Inc. | Use of selective ozone TEOS oxide to create variable thickness layers and spacers |
DE10052680C2 (de) | 2000-10-24 | 2002-10-24 | Advanced Micro Devices Inc | Verfahren zum Einstellen einer Form einer auf einem Substrat gebildeten Oxidschicht |
TW580730B (en) * | 2001-03-09 | 2004-03-21 | Macronix Int Co Ltd | Method of forming a silicon oxide layer with different thickness using pulsed nitrogen plasma implantation |
KR100400253B1 (ko) | 2001-09-04 | 2003-10-01 | 주식회사 하이닉스반도체 | 반도체소자의 박막 트랜지스터 제조방법 |
DE10207122B4 (de) | 2002-02-20 | 2007-07-05 | Advanced Micro Devices, Inc., Sunnyvale | Ein Verfahren zur Herstellung von Schichten aus Oxid auf einer Oberfläche eines Substrats |
US6974737B2 (en) * | 2002-05-16 | 2005-12-13 | Spinnaker Semiconductor, Inc. | Schottky barrier CMOS fabrication method |
US20030218218A1 (en) * | 2002-05-21 | 2003-11-27 | Samir Chaudhry | SRAM cell with reduced standby leakage current and method for forming the same |
KR20040010303A (ko) * | 2002-07-23 | 2004-01-31 | 가부시끼가이샤 도시바 | 반도체 장치 및 그 제조 방법, 불휘발성 반도체 기억 장치및 그 제조 방법, 및 불휘발성 반도체 기억 장치를구비하는 전자 장치 |
US6759302B1 (en) * | 2002-07-30 | 2004-07-06 | Taiwan Semiconductor Manufacturing Company | Method of generating multiple oxides by plasma nitridation on oxide |
KR100464852B1 (ko) * | 2002-08-07 | 2005-01-05 | 삼성전자주식회사 | 반도체 장치의 게이트 산화막 형성방법 |
US6670682B1 (en) * | 2002-08-29 | 2003-12-30 | Micron Technology, Inc. | Multilayered doped conductor |
JP4887604B2 (ja) * | 2003-08-29 | 2012-02-29 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7037786B2 (en) * | 2003-11-18 | 2006-05-02 | Atmel Corporation | Method of forming a low voltage gate oxide layer and tunnel oxide layer in an EEPROM cell |
US8735297B2 (en) | 2004-05-06 | 2014-05-27 | Sidense Corporation | Reverse optical proximity correction method |
US7755162B2 (en) * | 2004-05-06 | 2010-07-13 | Sidense Corp. | Anti-fuse memory cell |
JP4981661B2 (ja) * | 2004-05-06 | 2012-07-25 | サイデンス コーポレーション | 分割チャネルアンチヒューズアレイ構造 |
US9123572B2 (en) | 2004-05-06 | 2015-09-01 | Sidense Corporation | Anti-fuse memory cell |
US7060568B2 (en) * | 2004-06-30 | 2006-06-13 | Intel Corporation | Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit |
US7402480B2 (en) * | 2004-07-01 | 2008-07-22 | Linear Technology Corporation | Method of fabricating a semiconductor device with multiple gate oxide thicknesses |
US7858458B2 (en) | 2005-06-14 | 2010-12-28 | Micron Technology, Inc. | CMOS fabrication |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
KR100924549B1 (ko) * | 2007-11-14 | 2009-11-02 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
DE102008035805B4 (de) * | 2008-07-31 | 2013-01-31 | Advanced Micro Devices, Inc. | Herstellung von Gatedielektrika in PMOS- und NMOS-Transistoren |
US8211778B2 (en) * | 2008-12-23 | 2012-07-03 | Micron Technology, Inc. | Forming isolation regions for integrated circuits |
US7915129B2 (en) * | 2009-04-22 | 2011-03-29 | Polar Semiconductor, Inc. | Method of fabricating high-voltage metal oxide semiconductor transistor devices |
US9082905B2 (en) * | 2012-02-15 | 2015-07-14 | Texas Instruments Incorporated | Photodiode employing surface grating to enhance sensitivity |
US8809150B2 (en) * | 2012-08-16 | 2014-08-19 | Globalfoundries Singapore Pte. Ltd. | MOS with recessed lightly-doped drain |
US10050147B2 (en) * | 2015-07-24 | 2018-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10714486B2 (en) | 2018-09-13 | 2020-07-14 | Sandisk Technologies Llc | Static random access memory cell employing n-doped PFET gate electrodes and methods of manufacturing the same |
Family Cites Families (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4098618A (en) * | 1977-06-03 | 1978-07-04 | International Business Machines Corporation | Method of manufacturing semiconductor devices in which oxide regions are formed by an oxidation mask disposed directly on a substrate damaged by ion implantation |
JPS5637635A (en) * | 1979-09-05 | 1981-04-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US4287661A (en) | 1980-03-26 | 1981-09-08 | International Business Machines Corporation | Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation |
IT1213230B (it) | 1984-10-23 | 1989-12-14 | Ates Componenti Elettron | Processo planox a becco ridotto per la formazione di componenti elettronici integrati. |
US4551910A (en) * | 1984-11-27 | 1985-11-12 | Intel Corporation | MOS Isolation processing |
US4578128A (en) | 1984-12-03 | 1986-03-25 | Ncr Corporation | Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants |
NL8501720A (nl) | 1985-06-14 | 1987-01-02 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak plaatselijk wordt voorzien van veldoxide met kanaalonderbreker. |
JPS6258673A (ja) * | 1985-09-09 | 1987-03-14 | Fujitsu Ltd | 半導体記憶装置 |
US4866002A (en) * | 1985-11-26 | 1989-09-12 | Fuji Photo Film Co., Ltd. | Complementary insulated-gate field effect transistor integrated circuit and manufacturing method thereof |
US4701423A (en) * | 1985-12-20 | 1987-10-20 | Ncr Corporation | Totally self-aligned CMOS process |
US4682407A (en) * | 1986-01-21 | 1987-07-28 | Motorola, Inc. | Means and method for stabilizing polycrystalline semiconductor layers |
US4707721A (en) * | 1986-02-20 | 1987-11-17 | Texas Instruments Incorporated | Passivated dual dielectric gate system and method for fabricating same |
US4729009A (en) * | 1986-02-20 | 1988-03-01 | Texas Instruments Incorporated | Gate dielectric including undoped amorphous silicon |
IT1191755B (it) * | 1986-04-29 | 1988-03-23 | Sgs Microelettronica Spa | Processo di fabbricazione per celle eprom con dielettrico ossido-nitruro-ossido |
US4774197A (en) * | 1986-06-17 | 1988-09-27 | Advanced Micro Devices, Inc. | Method of improving silicon dioxide |
US5066995A (en) | 1987-03-13 | 1991-11-19 | Harris Corporation | Double level conductor structure |
US4851257A (en) * | 1987-03-13 | 1989-07-25 | Harris Corporation | Process for the fabrication of a vertical contact |
US4776925A (en) * | 1987-04-30 | 1988-10-11 | The Trustees Of Columbia University In The City Of New York | Method of forming dielectric thin films on silicon by low energy ion beam bombardment |
JPH01183844A (ja) * | 1988-01-19 | 1989-07-21 | Toshiba Corp | 半導体装置 |
US5141882A (en) | 1989-04-05 | 1992-08-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor field effect device having channel stop and channel region formed in a well and manufacturing method therefor |
US5043780A (en) * | 1990-01-03 | 1991-08-27 | Micron Technology, Inc. | DRAM cell having a texturized polysilicon lower capacitor plate for increased capacitance |
US5172200A (en) * | 1990-01-12 | 1992-12-15 | Mitsubishi Denki Kabushiki Kaisha | MOS memory device having a LDD structure and a visor-like insulating layer |
US5208176A (en) * | 1990-01-16 | 1993-05-04 | Micron Technology, Inc. | Method of fabricating an enhanced dynamic random access memory (DRAM) cell capacitor using multiple polysilicon texturization |
CA2045773A1 (en) | 1990-06-29 | 1991-12-30 | Compaq Computer Corporation | Byte-compare operation for high-performance processor |
US5286992A (en) * | 1990-09-28 | 1994-02-15 | Actel Corporation | Low voltage device in a high voltage substrate |
US5254489A (en) * | 1990-10-18 | 1993-10-19 | Nec Corporation | Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation |
JPH07118522B2 (ja) * | 1990-10-24 | 1995-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 基板表面を酸化処理するための方法及び半導体の構造 |
JP3006098B2 (ja) * | 1991-01-21 | 2000-02-07 | ブラザー工業株式会社 | 印字データ処理装置 |
US5082797A (en) * | 1991-01-22 | 1992-01-21 | Micron Technology, Inc. | Method of making stacked textured container capacitor |
US5102832A (en) * | 1991-02-11 | 1992-04-07 | Micron Technology, Inc. | Methods for texturizing polysilicon |
KR940009357B1 (ko) | 1991-04-09 | 1994-10-07 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
KR950000103B1 (ko) | 1991-04-15 | 1995-01-09 | 금성일렉트론 주식회사 | 반도체 장치 및 그 제조방법 |
US5138411A (en) * | 1991-05-06 | 1992-08-11 | Micron Technology, Inc. | Anodized polysilicon layer lower capacitor plate of a dram to increase capacitance |
EP1526446A3 (en) | 1991-07-08 | 2007-04-04 | Seiko Epson Corporation | Extensible RISC microprocessor architecture |
US5250456A (en) * | 1991-09-13 | 1993-10-05 | Sgs-Thomson Microelectronics, Inc. | Method of forming an integrated circuit capacitor dielectric and a capacitor formed thereby |
US5191509A (en) * | 1991-12-11 | 1993-03-02 | International Business Machines Corporation | Textured polysilicon stacked trench capacitor |
US5358894A (en) * | 1992-02-06 | 1994-10-25 | Micron Technology, Inc. | Oxidation enhancement in narrow masked field regions of a semiconductor wafer |
JPH05283678A (ja) * | 1992-03-31 | 1993-10-29 | Matsushita Electron Corp | Mis型半導体装置 |
US5340764A (en) * | 1993-02-19 | 1994-08-23 | Atmel Corporation | Integration of high performance submicron CMOS and dual-poly non-volatile memory devices using a third polysilicon layer |
US5330920A (en) * | 1993-06-15 | 1994-07-19 | Digital Equipment Corporation | Method of controlling gate oxide thickness in the fabrication of semiconductor devices |
US5316965A (en) | 1993-07-29 | 1994-05-31 | Digital Equipment Corporation | Method of decreasing the field oxide etch rate in isolation technology |
JPH0758212A (ja) * | 1993-08-19 | 1995-03-03 | Sony Corp | Cmos集積回路 |
US5308787A (en) * | 1993-10-22 | 1994-05-03 | United Microelectronics Corporation | Uniform field oxidation for locos isolation |
EP0651321B1 (en) | 1993-10-29 | 2001-11-14 | Advanced Micro Devices, Inc. | Superscalar microprocessors |
FR2718864B1 (fr) | 1994-04-19 | 1996-05-15 | Sgs Thomson Microelectronics | Dispositif de traitement numérique avec instructions de recherche du minimum et du maximum. |
KR0136935B1 (ko) * | 1994-04-21 | 1998-04-24 | 문정환 | 메모리 소자의 제조방법 |
US5429972A (en) | 1994-05-09 | 1995-07-04 | Advanced Micro Devices, Inc. | Method of fabricating a capacitor with a textured polysilicon interface and an enhanced dielectric |
US6498376B1 (en) * | 1994-06-03 | 2002-12-24 | Seiko Instruments Inc | Semiconductor device and manufacturing method thereof |
US5480828A (en) * | 1994-09-30 | 1996-01-02 | Taiwan Semiconductor Manufacturing Corp. Ltd. | Differential gate oxide process by depressing or enhancing oxidation rate for mixed 3/5 V CMOS process |
US5432114A (en) * | 1994-10-24 | 1995-07-11 | Analog Devices, Inc. | Process for integration of gate dielectric layers having different parameters in an IGFET integrated circuit |
TW344897B (en) * | 1994-11-30 | 1998-11-11 | At&T Tcorporation | A process for forming gate oxides possessing different thicknesses on a semiconductor substrate |
IL116210A0 (en) | 1994-12-02 | 1996-01-31 | Intel Corp | Microprocessor having a compare operation and a method of comparing packed data in a processor |
US5515306A (en) | 1995-02-14 | 1996-05-07 | Ibm | Processing system and method for minimum/maximum number determination |
US5502009A (en) * | 1995-02-16 | 1996-03-26 | United Microelectronics Corp. | Method for fabricating gate oxide layers of different thicknesses |
US5597754A (en) | 1995-05-25 | 1997-01-28 | Industrial Technology Research Institute | Increased surface area for DRAM, storage node capacitors, using a novel polysilicon deposition and anneal process |
US5576266A (en) * | 1996-02-12 | 1996-11-19 | Eastman Kodak Company | Magnetic layer in dye-donor element for thermal dye transfer |
KR970013402A (ko) * | 1995-08-28 | 1997-03-29 | 김광호 | 플래쉬 메모리장치 및 그 제조방법 |
US5937310A (en) * | 1996-04-29 | 1999-08-10 | Advanced Micro Devices, Inc. | Reduced bird's beak field oxidation process using nitrogen implanted into active region |
US5786256A (en) | 1996-07-19 | 1998-07-28 | Advanced Micro Devices, Inc. | Method of reducing MOS transistor gate beyond photolithographically patterned dimension |
US5882993A (en) | 1996-08-19 | 1999-03-16 | Advanced Micro Devices, Inc. | Integrated circuit with differing gate oxide thickness and process for making same |
US6033943A (en) * | 1996-08-23 | 2000-03-07 | Advanced Micro Devices, Inc. | Dual gate oxide thickness integrated circuit and process for making same |
US5789305A (en) | 1997-01-27 | 1998-08-04 | Chartered Semiconductor Manufacturing Ltd. | Locos with bird's beak suppression by a nitrogen implantation |
US6117736A (en) * | 1997-01-30 | 2000-09-12 | Lsi Logic Corporation | Method of fabricating insulated-gate field-effect transistors having different gate capacitances |
US5872376A (en) | 1997-03-06 | 1999-02-16 | Advanced Micro Devices, Inc. | Oxide formation technique using thin film silicon deposition |
US5962914A (en) | 1998-01-14 | 1999-10-05 | Advanced Micro Devices, Inc. | Reduced bird's beak field oxidation process using nitrogen implanted into active region |
US5963803A (en) * | 1998-02-02 | 1999-10-05 | Advanced Micro Devices, Inc. | Method of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widths |
US6093659A (en) * | 1998-03-25 | 2000-07-25 | Texas Instruments Incorporated | Selective area halogen doping to achieve dual gate oxide thickness on a wafer |
JP3194370B2 (ja) * | 1998-05-11 | 2001-07-30 | 日本電気株式会社 | 半導体装置とその製造方法 |
US6165849A (en) * | 1998-12-04 | 2000-12-26 | Advanced Micro Devices, Inc. | Method of manufacturing mosfet with differential gate oxide thickness on the same IC chip |
US6147008A (en) * | 1999-11-19 | 2000-11-14 | Chartered Semiconductor Manufacturing Ltd. | Creation of multiple gate oxide with high thickness ratio in flash memory process |
-
1996
- 1996-08-19 US US08/699,249 patent/US5882993A/en not_active Expired - Lifetime
-
1997
- 1997-05-29 WO PCT/US1997/009638 patent/WO1998008254A1/en not_active Application Discontinuation
- 1997-05-29 KR KR10-1999-7001315A patent/KR100517677B1/ko active IP Right Grant
- 1997-05-29 DE DE69710609T patent/DE69710609T2/de not_active Expired - Lifetime
- 1997-05-29 EP EP97927970A patent/EP0944921B1/en not_active Expired - Lifetime
- 1997-05-29 JP JP10510718A patent/JP2000517102A/ja active Pending
-
1998
- 1998-12-08 US US09/207,437 patent/US6661061B1/en not_active Expired - Lifetime