JP2000349301A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JP2000349301A
JP2000349301A JP2000097689A JP2000097689A JP2000349301A JP 2000349301 A JP2000349301 A JP 2000349301A JP 2000097689 A JP2000097689 A JP 2000097689A JP 2000097689 A JP2000097689 A JP 2000097689A JP 2000349301 A JP2000349301 A JP 2000349301A
Authority
JP
Japan
Prior art keywords
film
layer
insulating film
metal
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000097689A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000349301A5 (enExample
Inventor
Hisashi Otani
久 大谷
Misako Nakazawa
美佐子 仲沢
Tomohito Murakami
智史 村上
Etsuko Fujimoto
悦子 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000097689A priority Critical patent/JP2000349301A/ja
Publication of JP2000349301A publication Critical patent/JP2000349301A/ja
Publication of JP2000349301A5 publication Critical patent/JP2000349301A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2000097689A 1999-04-01 2000-03-31 半導体装置およびその作製方法 Withdrawn JP2000349301A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000097689A JP2000349301A (ja) 1999-04-01 2000-03-31 半導体装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-94746 1999-04-01
JP9474699 1999-04-01
JP2000097689A JP2000349301A (ja) 1999-04-01 2000-03-31 半導体装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011158584A Division JP5478566B2 (ja) 1999-04-01 2011-07-20 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
JP2000349301A true JP2000349301A (ja) 2000-12-15
JP2000349301A5 JP2000349301A5 (enExample) 2007-05-10

Family

ID=26435993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000097689A Withdrawn JP2000349301A (ja) 1999-04-01 2000-03-31 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP2000349301A (enExample)

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002055631A (ja) * 2000-05-29 2002-02-20 Semiconductor Energy Lab Co Ltd 電気光学装置の作製方法
JP2003045671A (ja) * 2001-05-22 2003-02-14 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
JP2003174173A (ja) * 2001-02-28 2003-06-20 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2004085898A (ja) * 2002-08-27 2004-03-18 Seiko Epson Corp 電気光学装置及び電子機器
JP2004241750A (ja) * 2002-03-26 2004-08-26 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2005191564A (ja) * 2001-02-28 2005-07-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2005311328A (ja) * 2004-03-25 2005-11-04 Semiconductor Energy Lab Co Ltd 発光装置とその製造方法、電子機器
JP2006054425A (ja) * 2004-05-07 2006-02-23 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006510066A (ja) * 2002-12-16 2006-03-23 イー−インク コーポレイション 電気光学表示装置用バックプレーン
JP2007506134A (ja) * 2003-09-22 2007-03-15 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． 液晶表示装置の製造方法
JP2007134730A (ja) * 2006-12-01 2007-05-31 Semiconductor Energy Lab Co Ltd 表示装置
US7242440B2 (en) 2002-10-31 2007-07-10 Seiko Epson Corporation Electro-optical device and electronic apparatus having coating member coating an inner side wall of a contact hole
JP2008053526A (ja) * 2006-08-25 2008-03-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008078634A (ja) * 2006-08-25 2008-04-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7405115B2 (en) 2001-02-28 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7408191B2 (en) 2001-05-22 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and process of manufacturing the same
JP2008276256A (ja) * 2008-07-17 2008-11-13 Seiko Epson Corp 電気光学装置及び電子機器
JP2009271311A (ja) * 2008-05-07 2009-11-19 Ricoh Co Ltd 回路基板の製造方法、回路基板、アクティブマトリックス回路基板、画像表示装置
US8198635B2 (en) 2004-03-25 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method for manufacturing thereof and electronic appliance
US8278722B2 (en) 2003-11-27 2012-10-02 Samsung Display Co., Ltd. Flat panel display device
US8368071B2 (en) 2002-03-26 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a thin film transistor and capacitor
JP2013219173A (ja) * 2012-04-09 2013-10-24 Jsr Corp 半導体素子、半導体基板、感放射線性樹脂組成物、保護膜および表示素子
US8889490B2 (en) 2005-01-31 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method thereof
US9059045B2 (en) 2000-03-08 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2018503964A (ja) * 2014-12-03 2018-02-08 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． 薄膜トランジスタデバイス、その製造方法、及び表示装置
JP2018139324A (ja) * 2013-09-05 2018-09-06 株式会社半導体エネルギー研究所 半導体装置
RU198647U1 (ru) * 2020-04-03 2020-07-21 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Маска для травления полиимидных защитных покрытий полупроводниковых приборов
JP2020113628A (ja) * 2019-01-10 2020-07-27 株式会社ジャパンディスプレイ 半導体装置及び表示装置
WO2020194993A1 (ja) * 2019-03-26 2020-10-01 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
JP2020533616A (ja) * 2017-09-12 2020-11-19 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． アレイ基板、表示パネルおよび表示装置
WO2024052774A1 (ja) * 2022-09-08 2024-03-14 株式会社半導体エネルギー研究所 半導体装置の作製方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214538A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 配線構造体の製造方法
JPS6466980A (en) * 1987-09-08 1989-03-13 Seiko Epson Corp Superconducting transistor
JPH0590492A (ja) * 1991-09-27 1993-04-09 Sanyo Electric Co Ltd 半導体集積回路とその製造方法
JPH0897310A (ja) * 1994-09-29 1996-04-12 Nec Corp 半導体集積回路装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214538A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 配線構造体の製造方法
JPS6466980A (en) * 1987-09-08 1989-03-13 Seiko Epson Corp Superconducting transistor
JPH0590492A (ja) * 1991-09-27 1993-04-09 Sanyo Electric Co Ltd 半導体集積回路とその製造方法
JPH0897310A (ja) * 1994-09-29 1996-04-12 Nec Corp 半導体集積回路装置の製造方法

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9786687B2 (en) 2000-03-08 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9059045B2 (en) 2000-03-08 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9368514B2 (en) 2000-03-08 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2002055631A (ja) * 2000-05-29 2002-02-20 Semiconductor Energy Lab Co Ltd 電気光学装置の作製方法
US8735889B2 (en) 2001-02-28 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2003174173A (ja) * 2001-02-28 2003-06-20 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR100865244B1 (ko) * 2001-02-28 2008-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이의 제조 방법
US7405115B2 (en) 2001-02-28 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2005191564A (ja) * 2001-02-28 2005-07-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US9330940B2 (en) 2001-02-28 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9368561B2 (en) 2001-05-22 2016-06-14 Semiconductor Enery Laboratory Co., Ltd. Luminescent device having light-emitting element and transistor
US8803152B2 (en) 2001-05-22 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and process of manufacturing the same
US8022404B2 (en) 2001-05-22 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and process of manufacturing the same
US8450741B2 (en) 2001-05-22 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and process of manufacturing the same
US10103211B2 (en) 2001-05-22 2018-10-16 Semiconductor Energy Laboratory Co., Ltd. Luminescent device having light-emitting element and transistor
US7408191B2 (en) 2001-05-22 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and process of manufacturing the same
US9761645B2 (en) 2001-05-22 2017-09-12 Semiconductor Energy Laboratory Co., Ltd. Luminescent device having light emitting element and transistor
JP2003045671A (ja) * 2001-05-22 2003-02-14 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US8368071B2 (en) 2002-03-26 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a thin film transistor and capacitor
JP2004241750A (ja) * 2002-03-26 2004-08-26 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US9070773B2 (en) 2002-03-26 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a thin film transistor and a capacitor
JP2004085898A (ja) * 2002-08-27 2004-03-18 Seiko Epson Corp 電気光学装置及び電子機器
US7242440B2 (en) 2002-10-31 2007-07-10 Seiko Epson Corporation Electro-optical device and electronic apparatus having coating member coating an inner side wall of a contact hole
JP2006510066A (ja) * 2002-12-16 2006-03-23 イー−インク コーポレイション 電気光学表示装置用バックプレーン
JP2007506134A (ja) * 2003-09-22 2007-03-15 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． 液晶表示装置の製造方法
US8278722B2 (en) 2003-11-27 2012-10-02 Samsung Display Co., Ltd. Flat panel display device
US8198635B2 (en) 2004-03-25 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method for manufacturing thereof and electronic appliance
JP2005311328A (ja) * 2004-03-25 2005-11-04 Semiconductor Energy Lab Co Ltd 発光装置とその製造方法、電子機器
US8674369B2 (en) 2004-03-25 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method for manufacturing thereof and electronic appliance
JP2006054425A (ja) * 2004-05-07 2006-02-23 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US8889490B2 (en) 2005-01-31 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method thereof
JP2008053526A (ja) * 2006-08-25 2008-03-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008078634A (ja) * 2006-08-25 2008-04-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2007134730A (ja) * 2006-12-01 2007-05-31 Semiconductor Energy Lab Co Ltd 表示装置
JP2009271311A (ja) * 2008-05-07 2009-11-19 Ricoh Co Ltd 回路基板の製造方法、回路基板、アクティブマトリックス回路基板、画像表示装置
JP2008276256A (ja) * 2008-07-17 2008-11-13 Seiko Epson Corp 電気光学装置及び電子機器
JP2013219173A (ja) * 2012-04-09 2013-10-24 Jsr Corp 半導体素子、半導体基板、感放射線性樹脂組成物、保護膜および表示素子
JP2018139324A (ja) * 2013-09-05 2018-09-06 株式会社半導体エネルギー研究所 半導体装置
JP2019208058A (ja) * 2013-09-05 2019-12-05 株式会社半導体エネルギー研究所 表示装置
JP2018503964A (ja) * 2014-12-03 2018-02-08 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． 薄膜トランジスタデバイス、その製造方法、及び表示装置
JP2020533616A (ja) * 2017-09-12 2020-11-19 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． アレイ基板、表示パネルおよび表示装置
JP7199357B2 (ja) 2017-09-12 2023-01-05 京東方科技集團股▲ふん▼有限公司 アレイ基板、表示パネルおよび表示装置
JP2020113628A (ja) * 2019-01-10 2020-07-27 株式会社ジャパンディスプレイ 半導体装置及び表示装置
JP7327940B2 (ja) 2019-01-10 2023-08-16 株式会社ジャパンディスプレイ 半導体装置及び表示装置
WO2020194993A1 (ja) * 2019-03-26 2020-10-01 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
RU198647U1 (ru) * 2020-04-03 2020-07-21 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Маска для травления полиимидных защитных покрытий полупроводниковых приборов
WO2024052774A1 (ja) * 2022-09-08 2024-03-14 株式会社半導体エネルギー研究所 半導体装置の作製方法

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