JP7199357B2 - アレイ基板、表示パネルおよび表示装置 - Google Patents
アレイ基板、表示パネルおよび表示装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 129
- 239000010409 thin film Substances 0.000 claims description 25
- 238000002161 passivation Methods 0.000 claims description 23
- 230000000295 complement effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 149
- 239000011229 interlayer Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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Description
本願は2017年9月12日に出願された出願番号が201721170305.2である中国特許出願の優先権を主張するものであり、上記の中国特許出願に開示された内容を引用して本願の一部とする。
2 画素電極
3 ゲート絶縁層
4 層間絶縁層
5 パッシベーション層
6 画素定義層
7 有機発光層
8 相補型画素電極
9 平坦層
10 ゲート線
11 データ線
12 電源線
21 第1の部分
22 第2の部分
23 第3の部分
51 パッシベーション層の一部
61 開口部
100 表示パネル
101 アレイ基板
102 対向基板
120 第1電極
130 第2電極
200 ゲート駆動器
300 データ駆動器
400 タイミング制御器
Claims (19)
- ベース基板と、複数の薄膜トランジスタと、パッシベーション層と、複数の画素電極とを含むアレイ基板であって、
前記ベース基板が、アレイ状に配列された複数の画素領域を含み、
前記複数の薄膜トランジスタが、前記複数の画素領域のうちの対応する画素領域内に分布し、前記薄膜トランジスタのそれぞれが、前記ベース基板上に位置する活性層と、前記ベース基板上に位置するゲートと、前記ゲートの上方に位置するソースと、前記ゲートの上方に位置するドレインとを含み、前記活性層と前記ゲートとが互いに積層され、前記ソースが、第1のビアを介して前記活性層に電気的に接続され、前記ドレインが、第2のビアを介して前記活性層に電気的に接続され、前記ドレインが前記第2のビア内に位置する第1の部分を含み、
前記パッシベーション層が、各ソースと各ドレイン上に位置し、各ドレインの前記第1の部分を覆い、
前記複数の画素電極が、前記複数の画素領域のうちの対応する画素領域内に分布し、前記パッシベーション層上に位置し、前記画素電極のそれぞれが、前記パッシベーション層を貫通する対応する第3のビアを介して各ドレインのうちの対応するドレインに電気的に接続され、
前記ベース基板上の前記第3のビアの正投影が、前記ベース基板上の前記第2のビアの正投影を囲む、アレイ基板。 - 前記ドレインが、前記第2のビア外の第2の部分を更に含み、且つ前記画素電極が、前記第3のビアを介して前記ドレインの第2の部分に電気的に接続されている、請求項1に記載のアレイ基板。
- 前記アレイ基板が、前記パッシベーション層上に位置する平坦層を更に含み、
前記平坦層に、複数の第4のビアが設けられ、前記ベース基板上の前記第4のビアのそれぞれの正投影が、前記ベース基板上の前記第3のビアのうちの対応する第3のビアの正投影を完全に覆い、且つ、
前記画素電極のそれぞれが、前記対応する第3のビア内に位置する第1の部分と、前記第4のビアのうちの対応する第4のビア内に位置する第2の部分と、前記平坦層上に位置する第3の部分とを含む、請求項2に記載のアレイ基板。 - 前記ベース基板上の前記第4のビアのそれぞれの前記正投影が、前記ベース基板上の前記第2のビアのうちの対応する第2のビアの正投影も完全に覆う、請求項3に記載のアレイ基板。
- 前記ベース基板上の前記第4のビアのそれぞれの前記正投影が、円形および正方形からなる群から選択される形状を有する、請求項4に記載のアレイ基板。
- 前記ベース基板上の前記第4のビアのそれぞれの前記正投影の幾何学的中心が、前記ベース基板上の前記対応する第3のビアの前記正投影の幾何学的中心と重なっている、請求項3に記載のアレイ基板。
- 前記平坦層が、1~4μmの厚さを有する、請求項3に記載のアレイ基板。
- 前記ベース基板上の前記第3のビアの前記正投影が、円環状形状を有する、請求項1に記載のアレイ基板。
- 前記ベース基板上の前記第3のビアの前記正投影の幾何学的中心が、前記ベース基板上の前記第2のビアの前記正投影の幾何学的中心と重なっている、請求項1に記載のアレイ基板。
- 前記ベース基板上の前記第3のビアの前記正投影が、前記ベース基板上の前記第2のビアの前記正投影と部分的に重なっている、請求項1に記載のアレイ基板。
- 前記アレイ基板が、画素定義層と、複数の有機発光層と、相補型画素電極とを更に含み、
前記画素定義層が、前記複数の画素電極上に位置すると共に複数の開口部が設けられ、前記複数の開口部のそれぞれが、前記複数の画素電極のうちの対応する画素電極の領域を露出するように前記画素定義層を貫通し、
前記複数の有機発光層のそれぞれが、前記開口部のうちの対応する開口部内に位置すると共に前記対応する画素電極の露出領域を覆い、
前記相補型画素電極が、前記複数の有機発光層と前記画素定義層を覆う、請求項1に記載のアレイ基板。 - 前記画素定義層が、1~3μmの厚さを有する、請求項11に記載のアレイ基板。
- 前記第2のビアが、前記ベース基板に向かってテーパ状に形成される、請求項1に記載のアレイ基板。
- 前記第2のビアが、前記第2のビアの深さの3倍よりも大きい最小孔径を有する、請求項13に記載のアレイ基板。
- 各ゲートと各活性層との間に挟まれるゲート絶縁層を更に含む、請求項1に記載のアレイ基板。
- 前記複数の薄膜トランジスタのそれぞれにおいて、前記ゲートが、前記活性層よりも前記ベース基板から離れる位置にある、請求項15に記載のアレイ基板。
- 前記複数の薄膜トランジスタのそれぞれにおいて、前記ゲートが、前記活性層よりも前記ベース基板に近い位置にある、請求項15に記載のアレイ基板。
- 請求項1~17のいずれか一項に記載のアレイ基板を含む表示パネル。
- 請求項18の表示パネルを含む表示装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721170305.2U CN207165572U (zh) | 2017-09-12 | 2017-09-12 | 一种阵列基板及显示装置 |
CN201721170305.2 | 2017-09-12 | ||
PCT/CN2018/098286 WO2019052284A1 (zh) | 2017-09-12 | 2018-08-02 | 阵列基板、显示面板及显示装置 |
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JP2020533616A JP2020533616A (ja) | 2020-11-19 |
JP7199357B2 true JP7199357B2 (ja) | 2023-01-05 |
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CN207165572U (zh) | 2017-09-12 | 2018-03-30 | 京东方科技集团股份有限公司 | 一种阵列基板及显示装置 |
CN109119451B (zh) * | 2018-09-04 | 2020-08-25 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示装置 |
US11462282B2 (en) * | 2020-04-01 | 2022-10-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memory structure |
CN113238418B (zh) * | 2021-04-14 | 2022-09-09 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板、显示面板及阵列基板的制作方法 |
CN116018025A (zh) * | 2021-10-20 | 2023-04-25 | 北京京东方技术开发有限公司 | 显示基板及显示装置 |
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EP3683834A4 (en) | 2021-06-09 |
US10950676B2 (en) | 2021-03-16 |
AU2018331064B2 (en) | 2020-06-04 |
BR112019011946A2 (pt) | 2020-03-31 |
US20200357870A1 (en) | 2020-11-12 |
RU2745921C1 (ru) | 2021-04-02 |
JP2020533616A (ja) | 2020-11-19 |
EP3683834A1 (en) | 2020-07-22 |
KR20190067874A (ko) | 2019-06-17 |
AU2018331064A1 (en) | 2019-06-13 |
KR102192976B1 (ko) | 2020-12-18 |
WO2019052284A1 (zh) | 2019-03-21 |
MX2019006652A (es) | 2019-08-26 |
CN207165572U (zh) | 2018-03-30 |
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