JP2000299438A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JP2000299438A
JP2000299438A JP11107545A JP10754599A JP2000299438A JP 2000299438 A JP2000299438 A JP 2000299438A JP 11107545 A JP11107545 A JP 11107545A JP 10754599 A JP10754599 A JP 10754599A JP 2000299438 A JP2000299438 A JP 2000299438A
Authority
JP
Japan
Prior art keywords
frequency band
pin
amplifier
band amplifier
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11107545A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000299438A5 (https=
Inventor
Kumiko Takigawa
久美子 滝川
Satoshi Tanaka
聡 田中
Takashi Hashimoto
孝 橋本
Yoshiyuki Okabe
義行 岡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP11107545A priority Critical patent/JP2000299438A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to TW089106246A priority patent/TW472382B/zh
Priority to US09/547,915 priority patent/US6407449B1/en
Priority to KR1020000019472A priority patent/KR100890677B1/ko
Priority to EP00107931A priority patent/EP1045442A3/en
Publication of JP2000299438A publication Critical patent/JP2000299438A/ja
Priority to US10/083,547 priority patent/US6639310B2/en
Priority to US10/631,793 priority patent/US6768192B2/en
Priority to US10/812,081 priority patent/US6847108B2/en
Priority to US11/012,120 priority patent/US7369817B2/en
Publication of JP2000299438A5 publication Critical patent/JP2000299438A5/ja
Priority to KR1020070085376A priority patent/KR100842994B1/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/187—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/206—Wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Transceivers (AREA)
JP11107545A 1999-04-15 1999-04-15 半導体集積回路 Pending JP2000299438A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP11107545A JP2000299438A (ja) 1999-04-15 1999-04-15 半導体集積回路
TW089106246A TW472382B (en) 1999-04-15 2000-04-05 Semiconductor integrated circuit
US09/547,915 US6407449B1 (en) 1999-04-15 2000-04-11 Pin layout of semiconductor integrated circuits including dual band amplifier and receiving mixer
KR1020000019472A KR100890677B1 (ko) 1999-04-15 2000-04-14 반도체 집적 회로
EP00107931A EP1045442A3 (en) 1999-04-15 2000-04-14 Semiconductor integrated circuit
US10/083,547 US6639310B2 (en) 1999-04-15 2002-02-27 Pin arrangement for high frequency integrated circuit
US10/631,793 US6768192B2 (en) 1999-04-15 2003-08-01 Pin layout of dual band receiver with two input pads/pins restricted to a single side of a four sided package
US10/812,081 US6847108B2 (en) 1999-04-15 2004-03-30 Semiconductor integrated circuit
US11/012,120 US7369817B2 (en) 1999-04-15 2004-12-16 Semiconductor integrated circuit
KR1020070085376A KR100842994B1 (ko) 1999-04-15 2007-08-24 반도체 집적 회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11107545A JP2000299438A (ja) 1999-04-15 1999-04-15 半導体集積回路

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2003323904A Division JP2004088791A (ja) 2003-09-17 2003-09-17 半導体集積回路
JP2007101357A Division JP2007259464A (ja) 2007-04-09 2007-04-09 半導体集積回路

Publications (2)

Publication Number Publication Date
JP2000299438A true JP2000299438A (ja) 2000-10-24
JP2000299438A5 JP2000299438A5 (https=) 2005-02-10

Family

ID=14461912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11107545A Pending JP2000299438A (ja) 1999-04-15 1999-04-15 半導体集積回路

Country Status (5)

Country Link
US (5) US6407449B1 (https=)
EP (1) EP1045442A3 (https=)
JP (1) JP2000299438A (https=)
KR (2) KR100890677B1 (https=)
TW (1) TW472382B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7013123B2 (en) 2000-02-21 2006-03-14 Hitachi, Ltd. Wireless communication system
US7599667B2 (en) 2003-12-17 2009-10-06 Kabushiki Kaisha Toshiba Wireless communication apparatus and semiconductor device
US9671818B2 (en) 2014-03-12 2017-06-06 Kabushiki Kaisha Toshiba Memory device

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JP4319339B2 (ja) * 2000-08-30 2009-08-26 株式会社ルネサステクノロジ 半導体装置
US6931233B1 (en) * 2000-08-31 2005-08-16 Sirf Technology, Inc. GPS RF front end IC with programmable frequency synthesizer for use in wireless phones
KR100993277B1 (ko) * 2002-04-30 2010-11-10 르네사스 일렉트로닉스 가부시키가이샤 반도체장치 및 전자 장치
TWI225332B (en) * 2003-05-20 2004-12-11 Mediatek Inc Multi-band low noise amplifier
JP4010504B2 (ja) * 2003-06-04 2007-11-21 日立金属株式会社 マルチバンド用送受信機およびそれを用いた無線通信機
DE10336292A1 (de) * 2003-08-01 2005-02-17 Atmel Germany Gmbh Sende- und Empfangsvorrichtung mit wenigstens zwei Paaren aus je einem Sende-Leistungsverstärker und einem rauscharmen Eingangsverstärker
JP4418250B2 (ja) * 2004-02-05 2010-02-17 株式会社ルネサステクノロジ 高周波回路モジュール
CN1961209A (zh) * 2004-04-02 2007-05-09 蒂莫西·卡明斯 集成电子传感器
US8357958B2 (en) * 2004-04-02 2013-01-22 Silicon Laboratories Inc. Integrated CMOS porous sensor
JP2005340741A (ja) 2004-05-31 2005-12-08 Renesas Technology Corp 半導体装置
JP2006073821A (ja) * 2004-09-02 2006-03-16 Sharp Corp 半導体集積回路装置
US7580687B2 (en) * 2005-01-19 2009-08-25 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
JP4647361B2 (ja) * 2005-03-29 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路
US7768792B2 (en) * 2005-09-12 2010-08-03 Lg Innotek Co., Ltd. Front end module
JP4580882B2 (ja) * 2006-03-10 2010-11-17 株式会社東芝 半導体集積回路
JP4261576B2 (ja) * 2006-12-11 2009-04-30 アルプス電気株式会社 高周波回路及びテレビジョンチューナ
DE102007007357B4 (de) * 2007-02-14 2018-06-21 Infineon Technologies Ag Integrierte Schaltungsanordnung
US8324019B2 (en) * 2008-05-23 2012-12-04 Lsi Corporation Solution for package crosstalk minimization
US9124218B2 (en) 2009-06-19 2015-09-01 Koninklijke Philips N.V. Input impedance of low noise preamplifiers used for MRI with dual source FET, floating ground and permanent ground
US20110111792A1 (en) * 2009-11-12 2011-05-12 Sony Corporation System and method for effectively implementing a composite antenna for a wireless transceiver device
US8254862B2 (en) * 2009-12-29 2012-08-28 Silicon Laboratories Inc. Configurable radio front end
DE102010055707B4 (de) * 2009-12-29 2015-11-12 Silicon Laboratories Inc. Konfigurierbarer Rundfunkgeräteingang, Konfigurieren einer Tunerschaltung und System mit Konfigurierbarem Rundfunkgeräteingang
US8818309B2 (en) 2011-03-28 2014-08-26 Silicon Laboratories Inc. Providing multiple inductors for a radio tuner
US8852513B1 (en) 2011-09-30 2014-10-07 Silicon Laboratories Inc. Systems and methods for packaging integrated circuit gas sensor systems
US8691609B1 (en) 2011-09-30 2014-04-08 Silicon Laboratories Inc. Gas sensor materials and methods for preparation thereof
US8669131B1 (en) 2011-09-30 2014-03-11 Silicon Laboratories Inc. Methods and materials for forming gas sensor structures
US9164052B1 (en) 2011-09-30 2015-10-20 Silicon Laboratories Inc. Integrated gas sensor
JP5734217B2 (ja) * 2012-02-03 2015-06-17 ルネサスエレクトロニクス株式会社 半導体装置
US9543895B2 (en) * 2012-09-13 2017-01-10 Alfred Grayzel Circuit configuration using a frequency converter to achieve tunable circuit components such as filters and amplifiers
KR20150072846A (ko) * 2013-12-20 2015-06-30 삼성전기주식회사 반도체 패키지 모듈
TWI559449B (zh) * 2015-10-19 2016-11-21 穩懋半導體股份有限公司 化合物半導體積體電路之電路佈局方法
US20200007084A1 (en) * 2018-06-29 2020-01-02 Ali Corporation Low noise block converter integrated circuit

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US3974450A (en) * 1975-07-16 1976-08-10 Regency Electronics, Inc. Dual frequency FM receiver
DE3150453A1 (de) * 1981-12-19 1983-06-30 Bayer Ag, 5090 Leverkusen "leichtfliessende, schlagzaehe polyamide"
KR970003915B1 (ko) * 1987-06-24 1997-03-22 미다 가쓰시게 반도체 기억장치 및 그것을 사용한 반도체 메모리 모듈
NL8701641A (nl) * 1987-07-13 1989-02-01 Philips Nv Tv-hf ingangsschakeling.
US5355524A (en) * 1992-01-21 1994-10-11 Motorola, Inc. Integrated radio receiver/transmitter structure
GB2278253B (en) * 1993-05-05 1996-08-28 Marconi Gec Ltd An integrated transceiver circuit packaged component
US5406226A (en) * 1993-07-07 1995-04-11 Wireless Access, Inc. Stable, narrow bandwidth, high frequency amplifier with low power consumption
US5880601A (en) * 1994-06-13 1999-03-09 Hitachi, Ltd. Signal receiving circuit and digital signal processing system
US5903827A (en) * 1995-07-07 1999-05-11 Fujitsu Compound Semiconductor, Inc. Single balanced frequency downconverter for direct broadcast satellite transmissions and hybrid ring signal combiner
US5794159A (en) * 1996-08-07 1998-08-11 Nokia Mobile Phones Limited Dual band mobile station employing cross-connected transmitter and receiver circuits
US5995814A (en) * 1997-06-13 1999-11-30 Lucent Technologies Inc. Single-stage dual-band low-noise amplifier for use in a wireless communication system receiver
US6075995A (en) * 1998-01-30 2000-06-13 Conexant Systems, Inc. Amplifier module with two power amplifiers for dual band cellular phones
US6522895B1 (en) * 1998-12-31 2003-02-18 Ericsson Inc. Integrated transmitter and receiver components for a dual-band transceiver
US6658237B1 (en) * 1999-03-02 2003-12-02 Skyworks Solutions, Inc. Multi-Band transceiver utilizing direct conversion receiver
US6584090B1 (en) * 1999-04-23 2003-06-24 Skyworks Solutions, Inc. System and process for shared functional block CDMA and GSM communication transceivers

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7013123B2 (en) 2000-02-21 2006-03-14 Hitachi, Ltd. Wireless communication system
US7274923B2 (en) 2000-02-21 2007-09-25 Hitachi, Ltd. Wireless communication system
US7379728B2 (en) 2000-02-21 2008-05-27 Hitachi, Ltd. Wireless communication system
US7783276B2 (en) 2000-02-21 2010-08-24 Renesas Technology Corp. Wireless communication system
US8036628B2 (en) 2000-02-21 2011-10-11 Renesas Electronics Corporation Wireless communication system
US8204471B2 (en) 2000-02-21 2012-06-19 Renesas Electronics Corporation Wireless communication system
US8472911B2 (en) 2000-02-21 2013-06-25 Renesas Electronics Corporation Wireless communication system
US8824994B2 (en) 2000-02-21 2014-09-02 Renesas Electronics Corporation Wireless communication system
US9014655B2 (en) 2000-02-21 2015-04-21 Renesas Electronics Corporation Wireless communication system
US9331031B2 (en) 2000-02-21 2016-05-03 Renesas Electronics Corporation Wireless communication system
US7599667B2 (en) 2003-12-17 2009-10-06 Kabushiki Kaisha Toshiba Wireless communication apparatus and semiconductor device
US9671818B2 (en) 2014-03-12 2017-06-06 Kabushiki Kaisha Toshiba Memory device

Also Published As

Publication number Publication date
US6768192B2 (en) 2004-07-27
US20050101282A1 (en) 2005-05-12
US6847108B2 (en) 2005-01-25
US6639310B2 (en) 2003-10-28
US20020079569A1 (en) 2002-06-27
EP1045442A2 (en) 2000-10-18
KR100842994B1 (ko) 2008-07-01
KR20010014729A (ko) 2001-02-26
US20040021208A1 (en) 2004-02-05
KR20070089903A (ko) 2007-09-04
EP1045442A3 (en) 2003-07-23
US6407449B1 (en) 2002-06-18
US20040178497A1 (en) 2004-09-16
KR100890677B1 (ko) 2009-03-26
US7369817B2 (en) 2008-05-06
TW472382B (en) 2002-01-11

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