TW472382B - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit Download PDF

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Publication number
TW472382B
TW472382B TW089106246A TW89106246A TW472382B TW 472382 B TW472382 B TW 472382B TW 089106246 A TW089106246 A TW 089106246A TW 89106246 A TW89106246 A TW 89106246A TW 472382 B TW472382 B TW 472382B
Authority
TW
Taiwan
Prior art keywords
band
band amplifier
input
pin
amplifier
Prior art date
Application number
TW089106246A
Other languages
English (en)
Chinese (zh)
Inventor
Kumiko Takikawa
Satoshi Tanaka
Takashi Hashimoto
Yoshiyuki Okabe
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW472382B publication Critical patent/TW472382B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/187—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/206—Wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Transceivers (AREA)
TW089106246A 1999-04-15 2000-04-05 Semiconductor integrated circuit TW472382B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11107545A JP2000299438A (ja) 1999-04-15 1999-04-15 半導体集積回路

Publications (1)

Publication Number Publication Date
TW472382B true TW472382B (en) 2002-01-11

Family

ID=14461912

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089106246A TW472382B (en) 1999-04-15 2000-04-05 Semiconductor integrated circuit

Country Status (5)

Country Link
US (5) US6407449B1 (https=)
EP (1) EP1045442A3 (https=)
JP (1) JP2000299438A (https=)
KR (2) KR100890677B1 (https=)
TW (1) TW472382B (https=)

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JP4010504B2 (ja) * 2003-06-04 2007-11-21 日立金属株式会社 マルチバンド用送受信機およびそれを用いた無線通信機
DE10336292A1 (de) * 2003-08-01 2005-02-17 Atmel Germany Gmbh Sende- und Empfangsvorrichtung mit wenigstens zwei Paaren aus je einem Sende-Leistungsverstärker und einem rauscharmen Eingangsverstärker
JP4112484B2 (ja) 2003-12-17 2008-07-02 株式会社東芝 無線機器及び半導体装置
JP4418250B2 (ja) * 2004-02-05 2010-02-17 株式会社ルネサステクノロジ 高周波回路モジュール
CN1961209A (zh) * 2004-04-02 2007-05-09 蒂莫西·卡明斯 集成电子传感器
US8357958B2 (en) * 2004-04-02 2013-01-22 Silicon Laboratories Inc. Integrated CMOS porous sensor
JP2005340741A (ja) 2004-05-31 2005-12-08 Renesas Technology Corp 半導体装置
JP2006073821A (ja) * 2004-09-02 2006-03-16 Sharp Corp 半導体集積回路装置
US7580687B2 (en) * 2005-01-19 2009-08-25 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
JP4647361B2 (ja) * 2005-03-29 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路
US7768792B2 (en) * 2005-09-12 2010-08-03 Lg Innotek Co., Ltd. Front end module
JP4580882B2 (ja) * 2006-03-10 2010-11-17 株式会社東芝 半導体集積回路
JP4261576B2 (ja) * 2006-12-11 2009-04-30 アルプス電気株式会社 高周波回路及びテレビジョンチューナ
DE102007007357B4 (de) * 2007-02-14 2018-06-21 Infineon Technologies Ag Integrierte Schaltungsanordnung
US8324019B2 (en) * 2008-05-23 2012-12-04 Lsi Corporation Solution for package crosstalk minimization
US9124218B2 (en) 2009-06-19 2015-09-01 Koninklijke Philips N.V. Input impedance of low noise preamplifiers used for MRI with dual source FET, floating ground and permanent ground
US20110111792A1 (en) * 2009-11-12 2011-05-12 Sony Corporation System and method for effectively implementing a composite antenna for a wireless transceiver device
US8254862B2 (en) * 2009-12-29 2012-08-28 Silicon Laboratories Inc. Configurable radio front end
DE102010055707B4 (de) * 2009-12-29 2015-11-12 Silicon Laboratories Inc. Konfigurierbarer Rundfunkgeräteingang, Konfigurieren einer Tunerschaltung und System mit Konfigurierbarem Rundfunkgeräteingang
US8818309B2 (en) 2011-03-28 2014-08-26 Silicon Laboratories Inc. Providing multiple inductors for a radio tuner
US8852513B1 (en) 2011-09-30 2014-10-07 Silicon Laboratories Inc. Systems and methods for packaging integrated circuit gas sensor systems
US8691609B1 (en) 2011-09-30 2014-04-08 Silicon Laboratories Inc. Gas sensor materials and methods for preparation thereof
US8669131B1 (en) 2011-09-30 2014-03-11 Silicon Laboratories Inc. Methods and materials for forming gas sensor structures
US9164052B1 (en) 2011-09-30 2015-10-20 Silicon Laboratories Inc. Integrated gas sensor
JP5734217B2 (ja) * 2012-02-03 2015-06-17 ルネサスエレクトロニクス株式会社 半導体装置
US9543895B2 (en) * 2012-09-13 2017-01-10 Alfred Grayzel Circuit configuration using a frequency converter to achieve tunable circuit components such as filters and amplifiers
KR20150072846A (ko) * 2013-12-20 2015-06-30 삼성전기주식회사 반도체 패키지 모듈
US9671818B2 (en) 2014-03-12 2017-06-06 Kabushiki Kaisha Toshiba Memory device
TWI559449B (zh) * 2015-10-19 2016-11-21 穩懋半導體股份有限公司 化合物半導體積體電路之電路佈局方法
US20200007084A1 (en) * 2018-06-29 2020-01-02 Ali Corporation Low noise block converter integrated circuit

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Also Published As

Publication number Publication date
JP2000299438A (ja) 2000-10-24
US6768192B2 (en) 2004-07-27
US20050101282A1 (en) 2005-05-12
US6847108B2 (en) 2005-01-25
US6639310B2 (en) 2003-10-28
US20020079569A1 (en) 2002-06-27
EP1045442A2 (en) 2000-10-18
KR100842994B1 (ko) 2008-07-01
KR20010014729A (ko) 2001-02-26
US20040021208A1 (en) 2004-02-05
KR20070089903A (ko) 2007-09-04
EP1045442A3 (en) 2003-07-23
US6407449B1 (en) 2002-06-18
US20040178497A1 (en) 2004-09-16
KR100890677B1 (ko) 2009-03-26
US7369817B2 (en) 2008-05-06

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees