JP2000243341A5 - - Google Patents

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Publication number
JP2000243341A5
JP2000243341A5 JP2000039407A JP2000039407A JP2000243341A5 JP 2000243341 A5 JP2000243341 A5 JP 2000243341A5 JP 2000039407 A JP2000039407 A JP 2000039407A JP 2000039407 A JP2000039407 A JP 2000039407A JP 2000243341 A5 JP2000243341 A5 JP 2000243341A5
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JP
Japan
Prior art keywords
ion beam
beam current
detector
measured
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000039407A
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English (en)
Japanese (ja)
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JP2000243341A (ja
JP4692695B2 (ja
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Publication date
Priority claimed from US09/253,374 external-priority patent/US6194734B1/en
Application filed filed Critical
Publication of JP2000243341A publication Critical patent/JP2000243341A/ja
Publication of JP2000243341A5 publication Critical patent/JP2000243341A5/ja
Application granted granted Critical
Publication of JP4692695B2 publication Critical patent/JP4692695B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000039407A 1999-02-19 2000-02-17 イオン注入装置における可変開口を操作する方法および装置 Expired - Lifetime JP4692695B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/253,374 US6194734B1 (en) 1999-02-19 1999-02-19 Method and system for operating a variable aperture in an ion implanter
US253374 1999-02-19

Publications (3)

Publication Number Publication Date
JP2000243341A JP2000243341A (ja) 2000-09-08
JP2000243341A5 true JP2000243341A5 (enExample) 2007-02-22
JP4692695B2 JP4692695B2 (ja) 2011-06-01

Family

ID=22960001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000039407A Expired - Lifetime JP4692695B2 (ja) 1999-02-19 2000-02-17 イオン注入装置における可変開口を操作する方法および装置

Country Status (7)

Country Link
US (1) US6194734B1 (enExample)
EP (1) EP1030343B1 (enExample)
JP (1) JP4692695B2 (enExample)
KR (1) KR100479375B1 (enExample)
DE (1) DE60015205T2 (enExample)
SG (1) SG82675A1 (enExample)
TW (1) TW448467B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
US6403972B1 (en) * 1999-07-08 2002-06-11 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for alignment of ion beam systems using beam current sensors
JP3926745B2 (ja) * 2001-01-18 2007-06-06 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入のための開口を制限する，調節可能なコンダクタンス
JP2003086400A (ja) * 2001-09-11 2003-03-20 Hitachi Ltd 加速器システム及び医療用加速器施設
US6777695B2 (en) 2002-07-12 2004-08-17 Varian Semiconductors Equipment Associates, Inc. Rotating beam ion implanter
US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
EP1916694A1 (en) * 2006-10-25 2008-04-30 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh Adjustable aperture element for particle beam device, method of operating and manufacturing thereof
US7915597B2 (en) 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
RU2395619C1 (ru) * 2008-12-08 2010-07-27 Федеральное государственное унитарное предприятие Научно-исследовательский институт комплексных испытаний оптико-электронных приборов и систем (ФГУП НИИКИ ОЭП) Способ получения легированных слоев ионной имплантацией
US8669539B2 (en) * 2010-03-29 2014-03-11 Advanced Ion Beam Technology, Inc. Implant method and implanter by using a variable aperture
US8278623B2 (en) * 2011-01-14 2012-10-02 Kla-Tencor Corporation High-vacuum variable aperture mechanism and method of using same
KR101769493B1 (ko) * 2011-12-23 2017-08-30 주식회사 원익아이피에스 기판처리장치 및 그를 가지는 기판처리시스템
JP6253362B2 (ja) * 2013-11-21 2017-12-27 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム電流調整装置、及びビーム電流調整方法
JP6242314B2 (ja) * 2014-09-11 2017-12-06 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオンビームの調整方法
US9953801B1 (en) 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion
CN107195518A (zh) * 2017-06-22 2017-09-22 京东方科技集团股份有限公司 离子注入量调节装置及方法、离子注入设备、判断方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017403A (en) 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
GB1518282A (en) * 1974-07-31 1978-07-19 Atomic Energy Authority Uk Ion beam separators
JPS62272437A (ja) 1986-05-21 1987-11-26 Mitsubishi Electric Corp イオン注入装置用質量分析装置
JP3034009B2 (ja) * 1990-10-22 2000-04-17 株式会社日立製作所 イオン打込み装置
US5130552A (en) * 1990-12-17 1992-07-14 Applied Materials, Inc. Improved ion implantation using a variable mass resolving system
JP2668472B2 (ja) * 1991-10-17 1997-10-27 信越化学工業株式会社 含フッ素有機ケイ素化合物
JPH0620618A (ja) * 1992-07-02 1994-01-28 Fujitsu Ltd イオン注入装置
US5486702A (en) * 1993-09-21 1996-01-23 Genus, Inc. Scan technique to reduce transient wafer temperatures during ion implantation
JP3365066B2 (ja) * 1994-04-27 2003-01-08 日新電機株式会社 イオン注入方法およびその装置
JPH0945274A (ja) * 1995-07-31 1997-02-14 Nissin Electric Co Ltd イオン注入装置のドーズ量補正装置
US5640012A (en) * 1995-08-25 1997-06-17 Gatan, Inc. Precision-controlled slit mechanism for electron microscope
US5780863A (en) * 1997-04-29 1998-07-14 Eaton Corporation Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter
US5998798A (en) * 1998-06-11 1999-12-07 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method

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