TW448467B - Method and system for operating a variable aperture in an ion implanter - Google Patents
Method and system for operating a variable aperture in an ion implanter Download PDFInfo
- Publication number
- TW448467B TW448467B TW089101937A TW89101937A TW448467B TW 448467 B TW448467 B TW 448467B TW 089101937 A TW089101937 A TW 089101937A TW 89101937 A TW89101937 A TW 89101937A TW 448467 B TW448467 B TW 448467B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion beam
- beam current
- aperture
- current
- detector
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 109
- 230000007246 mechanism Effects 0.000 claims abstract description 21
- 238000005468 ion implantation Methods 0.000 claims abstract description 8
- 239000011148 porous material Substances 0.000 claims description 30
- 230000002079 cooperative effect Effects 0.000 claims description 11
- 230000000875 corresponding effect Effects 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
- 238000009960 carding Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 32
- 238000004458 analytical method Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/253,374 US6194734B1 (en) | 1999-02-19 | 1999-02-19 | Method and system for operating a variable aperture in an ion implanter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW448467B true TW448467B (en) | 2001-08-01 |
Family
ID=22960001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089101937A TW448467B (en) | 1999-02-19 | 2000-02-03 | Method and system for operating a variable aperture in an ion implanter |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6194734B1 (enExample) |
| EP (1) | EP1030343B1 (enExample) |
| JP (1) | JP4692695B2 (enExample) |
| KR (1) | KR100479375B1 (enExample) |
| DE (1) | DE60015205T2 (enExample) |
| SG (1) | SG82675A1 (enExample) |
| TW (1) | TW448467B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824744A (zh) * | 2010-03-29 | 2014-05-28 | 汉辰科技股份有限公司 | 在衬底上利用离子束以及可变孔隙来进行离子注入的方法 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423976B1 (en) * | 1999-05-28 | 2002-07-23 | Applied Materials, Inc. | Ion implanter and a method of implanting ions |
| US6403972B1 (en) * | 1999-07-08 | 2002-06-11 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for alignment of ion beam systems using beam current sensors |
| JP3926745B2 (ja) * | 2001-01-18 | 2007-06-06 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | イオン注入のための開口を制限する，調節可能なコンダクタンス |
| JP2003086400A (ja) * | 2001-09-11 | 2003-03-20 | Hitachi Ltd | 加速器システム及び医療用加速器施設 |
| US6777695B2 (en) | 2002-07-12 | 2004-08-17 | Varian Semiconductors Equipment Associates, Inc. | Rotating beam ion implanter |
| US6828572B2 (en) * | 2003-04-01 | 2004-12-07 | Axcelis Technologies, Inc. | Ion beam incident angle detector for ion implant systems |
| US7217940B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Collector for EUV light source |
| US7629597B2 (en) * | 2006-08-18 | 2009-12-08 | Axcelis Technologies, Inc. | Deposition reduction system for an ion implanter |
| EP1916694A1 (en) * | 2006-10-25 | 2008-04-30 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh | Adjustable aperture element for particle beam device, method of operating and manufacturing thereof |
| US7915597B2 (en) | 2008-03-18 | 2011-03-29 | Axcelis Technologies, Inc. | Extraction electrode system for high current ion implanter |
| RU2395619C1 (ru) * | 2008-12-08 | 2010-07-27 | Федеральное государственное унитарное предприятие Научно-исследовательский институт комплексных испытаний оптико-электронных приборов и систем (ФГУП НИИКИ ОЭП) | Способ получения легированных слоев ионной имплантацией |
| US8278623B2 (en) * | 2011-01-14 | 2012-10-02 | Kla-Tencor Corporation | High-vacuum variable aperture mechanism and method of using same |
| KR101769493B1 (ko) * | 2011-12-23 | 2017-08-30 | 주식회사 원익아이피에스 | 기판처리장치 및 그를 가지는 기판처리시스템 |
| JP6253362B2 (ja) * | 2013-11-21 | 2017-12-27 | 住友重機械イオンテクノロジー株式会社 | 高エネルギーイオン注入装置、ビーム電流調整装置、及びビーム電流調整方法 |
| JP6242314B2 (ja) * | 2014-09-11 | 2017-12-06 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置及びイオンビームの調整方法 |
| US9953801B1 (en) | 2016-11-29 | 2018-04-24 | Axcelis Technologies, Inc. | Two-axis variable width mass resolving aperture with fast acting shutter motion |
| CN107195518A (zh) * | 2017-06-22 | 2017-09-22 | 京东方科技集团股份有限公司 | 离子注入量调节装置及方法、离子注入设备、判断方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4017403A (en) | 1974-07-31 | 1977-04-12 | United Kingdom Atomic Energy Authority | Ion beam separators |
| GB1518282A (en) * | 1974-07-31 | 1978-07-19 | Atomic Energy Authority Uk | Ion beam separators |
| JPS62272437A (ja) | 1986-05-21 | 1987-11-26 | Mitsubishi Electric Corp | イオン注入装置用質量分析装置 |
| JP3034009B2 (ja) * | 1990-10-22 | 2000-04-17 | 株式会社日立製作所 | イオン打込み装置 |
| US5130552A (en) * | 1990-12-17 | 1992-07-14 | Applied Materials, Inc. | Improved ion implantation using a variable mass resolving system |
| JP2668472B2 (ja) * | 1991-10-17 | 1997-10-27 | 信越化学工業株式会社 | 含フッ素有機ケイ素化合物 |
| JPH0620618A (ja) * | 1992-07-02 | 1994-01-28 | Fujitsu Ltd | イオン注入装置 |
| US5486702A (en) * | 1993-09-21 | 1996-01-23 | Genus, Inc. | Scan technique to reduce transient wafer temperatures during ion implantation |
| JP3365066B2 (ja) * | 1994-04-27 | 2003-01-08 | 日新電機株式会社 | イオン注入方法およびその装置 |
| JPH0945274A (ja) * | 1995-07-31 | 1997-02-14 | Nissin Electric Co Ltd | イオン注入装置のドーズ量補正装置 |
| US5640012A (en) * | 1995-08-25 | 1997-06-17 | Gatan, Inc. | Precision-controlled slit mechanism for electron microscope |
| US5780863A (en) * | 1997-04-29 | 1998-07-14 | Eaton Corporation | Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter |
| US5998798A (en) * | 1998-06-11 | 1999-12-07 | Eaton Corporation | Ion dosage measurement apparatus for an ion beam implanter and method |
-
1999
- 1999-02-19 US US09/253,374 patent/US6194734B1/en not_active Expired - Lifetime
-
2000
- 2000-02-03 TW TW089101937A patent/TW448467B/zh not_active IP Right Cessation
- 2000-02-08 SG SG200000741A patent/SG82675A1/en unknown
- 2000-02-16 EP EP20000301219 patent/EP1030343B1/en not_active Expired - Lifetime
- 2000-02-16 DE DE60015205T patent/DE60015205T2/de not_active Expired - Lifetime
- 2000-02-17 JP JP2000039407A patent/JP4692695B2/ja not_active Expired - Lifetime
- 2000-02-19 KR KR10-2000-0008026A patent/KR100479375B1/ko not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824744A (zh) * | 2010-03-29 | 2014-05-28 | 汉辰科技股份有限公司 | 在衬底上利用离子束以及可变孔隙来进行离子注入的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100479375B1 (ko) | 2005-03-28 |
| DE60015205D1 (de) | 2004-12-02 |
| SG82675A1 (en) | 2001-08-21 |
| US6194734B1 (en) | 2001-02-27 |
| JP2000243341A (ja) | 2000-09-08 |
| JP4692695B2 (ja) | 2011-06-01 |
| EP1030343A2 (en) | 2000-08-23 |
| DE60015205T2 (de) | 2006-02-16 |
| EP1030343B1 (en) | 2004-10-27 |
| KR20010006660A (ko) | 2001-01-26 |
| EP1030343A3 (en) | 2001-05-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |