KR100479375B1 - 이온 주입기에서 가변 개구를 작동하기 위한 방법 및 시스템 - Google Patents

이온 주입기에서 가변 개구를 작동하기 위한 방법 및 시스템 Download PDF

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Publication number
KR100479375B1
KR100479375B1 KR10-2000-0008026A KR20000008026A KR100479375B1 KR 100479375 B1 KR100479375 B1 KR 100479375B1 KR 20000008026 A KR20000008026 A KR 20000008026A KR 100479375 B1 KR100479375 B1 KR 100479375B1
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KR
South Korea
Prior art keywords
ion beam
beam current
current
opening
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-0008026A
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English (en)
Korean (ko)
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KR20010006660A (ko
Inventor
루미스폴애쉬비
러티쉬우서한스저그
류준
스기타니미치로
무라카미도루
소가베히로시
Original Assignee
액셀리스 테크놀로지스, 인크.
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Publication date
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Publication of KR20010006660A publication Critical patent/KR20010006660A/ko
Application granted granted Critical
Publication of KR100479375B1 publication Critical patent/KR100479375B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR10-2000-0008026A 1999-02-19 2000-02-19 이온 주입기에서 가변 개구를 작동하기 위한 방법 및 시스템 Expired - Fee Related KR100479375B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/253,374 US6194734B1 (en) 1999-02-19 1999-02-19 Method and system for operating a variable aperture in an ion implanter
US09/253,374 1999-02-19

Publications (2)

Publication Number Publication Date
KR20010006660A KR20010006660A (ko) 2001-01-26
KR100479375B1 true KR100479375B1 (ko) 2005-03-28

Family

ID=22960001

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0008026A Expired - Fee Related KR100479375B1 (ko) 1999-02-19 2000-02-19 이온 주입기에서 가변 개구를 작동하기 위한 방법 및 시스템

Country Status (7)

Country Link
US (1) US6194734B1 (enExample)
EP (1) EP1030343B1 (enExample)
JP (1) JP4692695B2 (enExample)
KR (1) KR100479375B1 (enExample)
DE (1) DE60015205T2 (enExample)
SG (1) SG82675A1 (enExample)
TW (1) TW448467B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
US6403972B1 (en) * 1999-07-08 2002-06-11 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for alignment of ion beam systems using beam current sensors
JP3926745B2 (ja) * 2001-01-18 2007-06-06 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入のための開口を制限する，調節可能なコンダクタンス
JP2003086400A (ja) * 2001-09-11 2003-03-20 Hitachi Ltd 加速器システム及び医療用加速器施設
US6777695B2 (en) 2002-07-12 2004-08-17 Varian Semiconductors Equipment Associates, Inc. Rotating beam ion implanter
US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
EP1916694A1 (en) * 2006-10-25 2008-04-30 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh Adjustable aperture element for particle beam device, method of operating and manufacturing thereof
US7915597B2 (en) 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
RU2395619C1 (ru) * 2008-12-08 2010-07-27 Федеральное государственное унитарное предприятие Научно-исследовательский институт комплексных испытаний оптико-электронных приборов и систем (ФГУП НИИКИ ОЭП) Способ получения легированных слоев ионной имплантацией
US8669539B2 (en) * 2010-03-29 2014-03-11 Advanced Ion Beam Technology, Inc. Implant method and implanter by using a variable aperture
US8278623B2 (en) * 2011-01-14 2012-10-02 Kla-Tencor Corporation High-vacuum variable aperture mechanism and method of using same
KR101769493B1 (ko) * 2011-12-23 2017-08-30 주식회사 원익아이피에스 기판처리장치 및 그를 가지는 기판처리시스템
JP6253362B2 (ja) * 2013-11-21 2017-12-27 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム電流調整装置、及びビーム電流調整方法
JP6242314B2 (ja) * 2014-09-11 2017-12-06 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオンビームの調整方法
US9953801B1 (en) 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion
CN107195518A (zh) * 2017-06-22 2017-09-22 京东方科技集团股份有限公司 离子注入量调节装置及方法、离子注入设备、判断方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
JPH0620618A (ja) * 1992-07-02 1994-01-28 Fujitsu Ltd イオン注入装置
US5486702A (en) * 1993-09-21 1996-01-23 Genus, Inc. Scan technique to reduce transient wafer temperatures during ion implantation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1518282A (en) * 1974-07-31 1978-07-19 Atomic Energy Authority Uk Ion beam separators
JPS62272437A (ja) 1986-05-21 1987-11-26 Mitsubishi Electric Corp イオン注入装置用質量分析装置
JP3034009B2 (ja) * 1990-10-22 2000-04-17 株式会社日立製作所 イオン打込み装置
US5130552A (en) * 1990-12-17 1992-07-14 Applied Materials, Inc. Improved ion implantation using a variable mass resolving system
JP2668472B2 (ja) * 1991-10-17 1997-10-27 信越化学工業株式会社 含フッ素有機ケイ素化合物
JP3365066B2 (ja) * 1994-04-27 2003-01-08 日新電機株式会社 イオン注入方法およびその装置
JPH0945274A (ja) * 1995-07-31 1997-02-14 Nissin Electric Co Ltd イオン注入装置のドーズ量補正装置
US5640012A (en) * 1995-08-25 1997-06-17 Gatan, Inc. Precision-controlled slit mechanism for electron microscope
US5780863A (en) * 1997-04-29 1998-07-14 Eaton Corporation Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter
US5998798A (en) * 1998-06-11 1999-12-07 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
JPH0620618A (ja) * 1992-07-02 1994-01-28 Fujitsu Ltd イオン注入装置
US5486702A (en) * 1993-09-21 1996-01-23 Genus, Inc. Scan technique to reduce transient wafer temperatures during ion implantation

Also Published As

Publication number Publication date
DE60015205D1 (de) 2004-12-02
SG82675A1 (en) 2001-08-21
US6194734B1 (en) 2001-02-27
JP2000243341A (ja) 2000-09-08
JP4692695B2 (ja) 2011-06-01
EP1030343A2 (en) 2000-08-23
DE60015205T2 (de) 2006-02-16
EP1030343B1 (en) 2004-10-27
KR20010006660A (ko) 2001-01-26
TW448467B (en) 2001-08-01
EP1030343A3 (en) 2001-05-02

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