JP4692695B2 - イオン注入装置における可変開口を操作する方法および装置 - Google Patents

イオン注入装置における可変開口を操作する方法および装置 Download PDF

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Publication number
JP4692695B2
JP4692695B2 JP2000039407A JP2000039407A JP4692695B2 JP 4692695 B2 JP4692695 B2 JP 4692695B2 JP 2000039407 A JP2000039407 A JP 2000039407A JP 2000039407 A JP2000039407 A JP 2000039407A JP 4692695 B2 JP4692695 B2 JP 4692695B2
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Prior art keywords
ion beam
beam current
opening
detector
gap
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JP2000039407A
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Japanese (ja)
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JP2000243341A5 (enExample
JP2000243341A (ja
Inventor
アシュビー ローミス ポール
ジュルク ルティスハウザー ハンス
ルー ジュン
道朗 杉谷
享 村上
博 曽我部
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アクセリス テクノロジーズ インコーポレーテッド
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Publication of JP2000243341A5 publication Critical patent/JP2000243341A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2000039407A 1999-02-19 2000-02-17 イオン注入装置における可変開口を操作する方法および装置 Expired - Lifetime JP4692695B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/253,374 US6194734B1 (en) 1999-02-19 1999-02-19 Method and system for operating a variable aperture in an ion implanter
US253374 1999-02-19

Publications (3)

Publication Number Publication Date
JP2000243341A JP2000243341A (ja) 2000-09-08
JP2000243341A5 JP2000243341A5 (enExample) 2007-02-22
JP4692695B2 true JP4692695B2 (ja) 2011-06-01

Family

ID=22960001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000039407A Expired - Lifetime JP4692695B2 (ja) 1999-02-19 2000-02-17 イオン注入装置における可変開口を操作する方法および装置

Country Status (7)

Country Link
US (1) US6194734B1 (enExample)
EP (1) EP1030343B1 (enExample)
JP (1) JP4692695B2 (enExample)
KR (1) KR100479375B1 (enExample)
DE (1) DE60015205T2 (enExample)
SG (1) SG82675A1 (enExample)
TW (1) TW448467B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9269541B2 (en) 2013-11-21 2016-02-23 Sumitomo Heavy Industries Ion Technology Co., Ltd. High energy ion implanter, beam current adjuster, and beam current adjustment method

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
US6403972B1 (en) * 1999-07-08 2002-06-11 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for alignment of ion beam systems using beam current sensors
JP3926745B2 (ja) * 2001-01-18 2007-06-06 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド イオン注入のための開口を制限する，調節可能なコンダクタンス
JP2003086400A (ja) * 2001-09-11 2003-03-20 Hitachi Ltd 加速器システム及び医療用加速器施設
US6777695B2 (en) 2002-07-12 2004-08-17 Varian Semiconductors Equipment Associates, Inc. Rotating beam ion implanter
US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
EP1916694A1 (en) * 2006-10-25 2008-04-30 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh Adjustable aperture element for particle beam device, method of operating and manufacturing thereof
US7915597B2 (en) 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
RU2395619C1 (ru) * 2008-12-08 2010-07-27 Федеральное государственное унитарное предприятие Научно-исследовательский институт комплексных испытаний оптико-электронных приборов и систем (ФГУП НИИКИ ОЭП) Способ получения легированных слоев ионной имплантацией
US8669539B2 (en) * 2010-03-29 2014-03-11 Advanced Ion Beam Technology, Inc. Implant method and implanter by using a variable aperture
US8278623B2 (en) * 2011-01-14 2012-10-02 Kla-Tencor Corporation High-vacuum variable aperture mechanism and method of using same
KR101769493B1 (ko) * 2011-12-23 2017-08-30 주식회사 원익아이피에스 기판처리장치 및 그를 가지는 기판처리시스템
JP6242314B2 (ja) * 2014-09-11 2017-12-06 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオンビームの調整方法
US9953801B1 (en) 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion
CN107195518A (zh) * 2017-06-22 2017-09-22 京东方科技集团股份有限公司 离子注入量调节装置及方法、离子注入设备、判断方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017403A (en) 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
GB1518282A (en) * 1974-07-31 1978-07-19 Atomic Energy Authority Uk Ion beam separators
JPS62272437A (ja) 1986-05-21 1987-11-26 Mitsubishi Electric Corp イオン注入装置用質量分析装置
JP3034009B2 (ja) * 1990-10-22 2000-04-17 株式会社日立製作所 イオン打込み装置
US5130552A (en) * 1990-12-17 1992-07-14 Applied Materials, Inc. Improved ion implantation using a variable mass resolving system
JP2668472B2 (ja) * 1991-10-17 1997-10-27 信越化学工業株式会社 含フッ素有機ケイ素化合物
JPH0620618A (ja) * 1992-07-02 1994-01-28 Fujitsu Ltd イオン注入装置
US5486702A (en) * 1993-09-21 1996-01-23 Genus, Inc. Scan technique to reduce transient wafer temperatures during ion implantation
JP3365066B2 (ja) * 1994-04-27 2003-01-08 日新電機株式会社 イオン注入方法およびその装置
JPH0945274A (ja) * 1995-07-31 1997-02-14 Nissin Electric Co Ltd イオン注入装置のドーズ量補正装置
US5640012A (en) * 1995-08-25 1997-06-17 Gatan, Inc. Precision-controlled slit mechanism for electron microscope
US5780863A (en) * 1997-04-29 1998-07-14 Eaton Corporation Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter
US5998798A (en) * 1998-06-11 1999-12-07 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9269541B2 (en) 2013-11-21 2016-02-23 Sumitomo Heavy Industries Ion Technology Co., Ltd. High energy ion implanter, beam current adjuster, and beam current adjustment method
US9576771B2 (en) 2013-11-21 2017-02-21 Sumitomo Heavy Industries Ion Technology Co., Ltd. High energy ion implanter, beam current adjuster, and beam current adjustment method

Also Published As

Publication number Publication date
KR100479375B1 (ko) 2005-03-28
DE60015205D1 (de) 2004-12-02
SG82675A1 (en) 2001-08-21
US6194734B1 (en) 2001-02-27
JP2000243341A (ja) 2000-09-08
EP1030343A2 (en) 2000-08-23
DE60015205T2 (de) 2006-02-16
EP1030343B1 (en) 2004-10-27
KR20010006660A (ko) 2001-01-26
TW448467B (en) 2001-08-01
EP1030343A3 (en) 2001-05-02

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