JP2000216347A5 - - Google Patents

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Publication number
JP2000216347A5
JP2000216347A5 JP1999011988A JP1198899A JP2000216347A5 JP 2000216347 A5 JP2000216347 A5 JP 2000216347A5 JP 1999011988 A JP1999011988 A JP 1999011988A JP 1198899 A JP1198899 A JP 1198899A JP 2000216347 A5 JP2000216347 A5 JP 2000216347A5
Authority
JP
Japan
Prior art keywords
region
shallow well
well region
surface layer
layer portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999011988A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000216347A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11011988A priority Critical patent/JP2000216347A/ja
Priority claimed from JP11011988A external-priority patent/JP2000216347A/ja
Priority to US09/487,670 priority patent/US6320233B1/en
Publication of JP2000216347A publication Critical patent/JP2000216347A/ja
Publication of JP2000216347A5 publication Critical patent/JP2000216347A5/ja
Pending legal-status Critical Current

Links

JP11011988A 1999-01-20 1999-01-20 Ｃｍｏｓ半導体装置 Pending JP2000216347A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11011988A JP2000216347A (ja) 1999-01-20 1999-01-20 Ｃｍｏｓ半導体装置
US09/487,670 US6320233B1 (en) 1999-01-20 2000-01-19 CMOS semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11011988A JP2000216347A (ja) 1999-01-20 1999-01-20 Ｃｍｏｓ半導体装置

Publications (2)

Publication Number Publication Date
JP2000216347A JP2000216347A (ja) 2000-08-04
JP2000216347A5 true JP2000216347A5 (enExample) 2005-06-30

Family

ID=11792980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11011988A Pending JP2000216347A (ja) 1999-01-20 1999-01-20 Ｃｍｏｓ半導体装置

Country Status (2)

Country Link
US (1) US6320233B1 (enExample)
JP (1) JP2000216347A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936898B2 (en) 2002-12-31 2005-08-30 Transmeta Corporation Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
KR100602085B1 (ko) * 2003-12-31 2006-07-14 동부일렉트로닉스 주식회사 반도체 소자 및 그의 제조 방법
US7268028B1 (en) 2006-04-17 2007-09-11 International Business Machines Corporation Well isolation trenches (WIT) for CMOS devices
KR20090038653A (ko) * 2007-10-16 2009-04-21 삼성전자주식회사 Ｃｍｏｓ 소자 및 그 제조방법
US20140327084A1 (en) * 2013-05-01 2014-11-06 International Business Machines Corporation Dual shallow trench isolation (sti) field effect transistor (fet) and methods of forming

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60171761A (ja) * 1984-02-17 1985-09-05 Hitachi Ltd 半導体集積回路装置及びその製造方法
US5753529A (en) * 1994-05-05 1998-05-19 Siliconix Incorporated Surface mount and flip chip technology for total integrated circuit isolation
US5742090A (en) * 1996-04-04 1998-04-21 Advanced Micro Devices, Inc. Narrow width trenches for field isolation in integrated circuits
JPH1022462A (ja) 1996-06-28 1998-01-23 Sharp Corp 半導体装置及びその製造方法
US5831313A (en) * 1996-08-15 1998-11-03 Integrated Device Technology, Inc. Structure for improving latch-up immunity and interwell isolation in a semiconductor device
US5937288A (en) * 1997-06-30 1999-08-10 Siemens Aktiengesellschaft CMOS integrated circuits with reduced substrate defects

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