JP2000208488A - エッチング方法 - Google Patents

エッチング方法

Info

Publication number
JP2000208488A
JP2000208488A JP11005434A JP543499A JP2000208488A JP 2000208488 A JP2000208488 A JP 2000208488A JP 11005434 A JP11005434 A JP 11005434A JP 543499 A JP543499 A JP 543499A JP 2000208488 A JP2000208488 A JP 2000208488A
Authority
JP
Japan
Prior art keywords
etching
gas
bromine
etching method
hydrocarbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11005434A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000208488A5 (enExample
Inventor
Yasutsugu Suzuki
康嗣 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP11005434A priority Critical patent/JP2000208488A/ja
Priority to US09/478,789 priority patent/US6492068B1/en
Publication of JP2000208488A publication Critical patent/JP2000208488A/ja
Publication of JP2000208488A5 publication Critical patent/JP2000208488A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP11005434A 1999-01-12 1999-01-12 エッチング方法 Pending JP2000208488A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11005434A JP2000208488A (ja) 1999-01-12 1999-01-12 エッチング方法
US09/478,789 US6492068B1 (en) 1999-01-12 2000-01-07 Etching method for production of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11005434A JP2000208488A (ja) 1999-01-12 1999-01-12 エッチング方法

Publications (2)

Publication Number Publication Date
JP2000208488A true JP2000208488A (ja) 2000-07-28
JP2000208488A5 JP2000208488A5 (enExample) 2006-03-09

Family

ID=11611100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11005434A Pending JP2000208488A (ja) 1999-01-12 1999-01-12 エッチング方法

Country Status (2)

Country Link
US (1) US6492068B1 (enExample)
JP (1) JP2000208488A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004289155A (ja) * 2003-03-20 2004-10-14 Texas Instruments Inc 選択性エッチング化学薬品及びｃｄ制御のための高重合性ガスを含むｂａｒｃエッチング
JP2008535280A (ja) * 2005-04-04 2008-08-28 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Ａｒｃ材料のｃｄ低減のためのエッチングプロセス
JP2017183534A (ja) * 2016-03-30 2017-10-05 日本ゼオン株式会社 プラズマエッチングガス及びプラズマエッチング方法
WO2018225661A1 (ja) * 2017-06-08 2018-12-13 昭和電工株式会社 エッチング方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020155389A1 (en) * 2000-10-24 2002-10-24 Bharath Rangarajan Inverse resist coating process
US6642152B1 (en) * 2001-03-19 2003-11-04 Advanced Micro Devices, Inc. Method for ultra thin resist linewidth reduction using implantation
US6777340B1 (en) * 2001-09-10 2004-08-17 Taiwan Semiconductor Manufacturing Company Method of etching a silicon containing layer using multilayer masks
DE10154966A1 (de) * 2001-10-31 2003-05-22 Infineon Technologies Ag Verfahren zur Herstellung einer Halbleitervorrichtung
US20040018739A1 (en) * 2002-07-26 2004-01-29 Applied Materials, Inc. Methods for etching using building blocks
US7354847B2 (en) * 2004-01-26 2008-04-08 Taiwan Semiconductor Manufacturing Company Method of trimming technology
US7312865B2 (en) 2004-03-31 2007-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for in situ monitoring of chamber peeling
US20060166416A1 (en) * 2005-01-27 2006-07-27 International Business Machines Corporation Addition of ballast hydrocarbon gas to doped polysilicon etch masked by resist
JP2006310634A (ja) * 2005-04-28 2006-11-09 Sharp Corp 半導体装置の製造方法
US7989151B2 (en) * 2005-06-16 2011-08-02 Massachusetts Institute Of Technology Resolution enhancement in optical lithography via absorbance-modulation enabled multiple exposures
US20070278180A1 (en) * 2006-06-01 2007-12-06 Williamson Mark J Electron induced chemical etching for materials characterization
US7892978B2 (en) 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
US7807062B2 (en) 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
US7833427B2 (en) * 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
US20080102640A1 (en) * 2006-10-30 2008-05-01 Applied Materials, Inc. Etching oxide with high selectivity to titanium nitride
US20090283714A1 (en) * 2008-05-14 2009-11-19 Chung-Chih Chen Etching gas for removing organic layers
TWI510665B (zh) * 2009-02-17 2015-12-01 Tokyo Electron Ltd 使用電漿反應製程來形成氟碳化物層的方法
CN106096087B (zh) * 2016-05-31 2019-08-13 上海华虹宏力半导体制造有限公司 占领图形填充方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863558A (en) 1987-07-16 1989-09-05 Texas Instruments Incorporated Method for etching tungsten
JP2528962B2 (ja) 1989-02-27 1996-08-28 株式会社日立製作所 試料処理方法及び装置
JPH04171726A (ja) * 1990-11-02 1992-06-18 Sony Corp 多層レジストドライエッチング方法
US5326727A (en) 1992-12-30 1994-07-05 At&T Bell Laboratories Method for integrated circuit fabrication including linewidth control during etching
US5665203A (en) 1995-04-28 1997-09-09 International Business Machines Corporation Silicon etching method
US5976769A (en) * 1995-07-14 1999-11-02 Texas Instruments Incorporated Intermediate layer lithography
KR100230981B1 (ko) * 1996-05-08 1999-11-15 김광호 반도체장치 제조공정의 플라즈마 식각 방법
US5804088A (en) * 1996-07-12 1998-09-08 Texas Instruments Incorporated Intermediate layer lithography
JP2956602B2 (ja) 1996-08-26 1999-10-04 日本電気株式会社 ドライエッチング方法
KR19980064754A (ko) 1996-12-23 1998-10-07 윌리엄비.켐플러 무반사 코팅을 플라즈마 에칭하기 위한 공정
JPH10312991A (ja) 1997-05-12 1998-11-24 Sony Corp 有機系反射防止膜のプラズマエッチング方法
US5965461A (en) 1997-08-01 1999-10-12 Advanced Micro Devices, Inc. Controlled linewidth reduction during gate pattern formation using a spin-on barc
US6033992A (en) * 1997-08-19 2000-03-07 Micron Technology, Inc. Method for etching metals using organohalide compounds
JP2002510878A (ja) * 1998-04-02 2002-04-09 アプライド マテリアルズ インコーポレイテッド 低ｋ誘電体をエッチングする方法
US6174818B1 (en) * 1999-11-19 2001-01-16 Taiwan Semiconductor Manufacturing Company Method of patterning narrow gate electrode

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004289155A (ja) * 2003-03-20 2004-10-14 Texas Instruments Inc 選択性エッチング化学薬品及びｃｄ制御のための高重合性ガスを含むｂａｒｃエッチング
JP2008535280A (ja) * 2005-04-04 2008-08-28 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Ａｒｃ材料のｃｄ低減のためのエッチングプロセス
TWI384529B (zh) * 2005-04-04 2013-02-01 Globalfoundries Us Inc 用於ａｒｃ材料之ｃｄ縮小之蝕刻製程
JP2017183534A (ja) * 2016-03-30 2017-10-05 日本ゼオン株式会社 プラズマエッチングガス及びプラズマエッチング方法
WO2018225661A1 (ja) * 2017-06-08 2018-12-13 昭和電工株式会社 エッチング方法
KR20190130004A (ko) * 2017-06-08 2019-11-20 쇼와 덴코 가부시키가이샤 에칭 방법
JPWO2018225661A1 (ja) * 2017-06-08 2020-04-09 昭和電工株式会社 エッチング方法
US11164751B2 (en) 2017-06-08 2021-11-02 Showa Denko K.K. Etching method
KR102390158B1 (ko) 2017-06-08 2022-04-25 쇼와 덴코 가부시키가이샤 에칭 방법
JP7261159B2 (ja) 2017-06-08 2023-04-19 株式会社レゾナック エッチング方法

Also Published As

Publication number Publication date
US6492068B1 (en) 2002-12-10

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