JP2000199951A5 - - Google Patents
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- Publication number
- JP2000199951A5 JP2000199951A5 JP1999365146A JP36514699A JP2000199951A5 JP 2000199951 A5 JP2000199951 A5 JP 2000199951A5 JP 1999365146 A JP1999365146 A JP 1999365146A JP 36514699 A JP36514699 A JP 36514699A JP 2000199951 A5 JP2000199951 A5 JP 2000199951A5
- Authority
- JP
- Japan
- Prior art keywords
- norbornene
- carboxylate
- mol
- butanediol diacrylate
- hydroxyethyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PHSXOZKMZYKHLY-UHFFFAOYSA-N 2-hydroxyethyl bicyclo[2.2.1]hept-2-ene-5-carboxylate Chemical compound C1C2C(C(=O)OCCO)CC1C=C2 PHSXOZKMZYKHLY-UHFFFAOYSA-N 0.000 description 5
- FPYJFEHAWHCUMM-UHFFFAOYSA-N Maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 5
- FYGUSUBEMUKACF-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene-5-carboxylic acid Chemical compound C1C2C(C(=O)O)CC1C=C2 FYGUSUBEMUKACF-UHFFFAOYSA-N 0.000 description 4
- BZBMBZJUNPMEBD-UHFFFAOYSA-N tert-butyl bicyclo[2.2.1]hept-2-ene-5-carboxylate Chemical compound C1C2C(C(=O)OC(C)(C)C)CC1C=C2 BZBMBZJUNPMEBD-UHFFFAOYSA-N 0.000 description 4
- FQMIAEWUVYWVNB-UHFFFAOYSA-N 3-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OC(C)CCOC(=O)C=C FQMIAEWUVYWVNB-UHFFFAOYSA-N 0.000 description 3
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 description 3
- OZAIFHULBGXAKX-VAWYXSNFSA-N Azobisisobutyronitrile Chemical compound N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2,2'-azo-bis-isobutyronitrile Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- JFNLZVQOOSMTJK-UHFFFAOYSA-N Norbornene Chemical compound C1C2CCC1C=C2 JFNLZVQOOSMTJK-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- RFIHUFUZAHTZOQ-UHFFFAOYSA-N butyl bicyclo[2.2.1]hept-2-ene-5-carboxylate Chemical compound C1C2C(C(=O)OCCCC)CC1C=C2 RFIHUFUZAHTZOQ-UHFFFAOYSA-N 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000008079 hexane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-1998-0063793A KR100362937B1 (ko) | 1998-12-31 | 1998-12-31 | 신규의포토레지스트가교제,이를포함하는포토레지스트중합체및포토레지스트조성물 |
| KR1998P-63793 | 1998-12-31 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000199951A JP2000199951A (ja) | 2000-07-18 |
| JP2000199951A5 true JP2000199951A5 (US20040106767A1-20040603-C00005.png) | 2005-04-07 |
| JP4001445B2 JP4001445B2 (ja) | 2007-10-31 |
Family
ID=19570347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36514699A Expired - Fee Related JP4001445B2 (ja) | 1998-12-31 | 1999-12-22 | フォトレジスト共重合体、フォトレジスト組成物、フォトレジストパターンの形成方法、及び、半導体素子。 |
Country Status (9)
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208260B2 (en) * | 1998-12-31 | 2007-04-24 | Hynix Semiconductor Inc. | Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same |
| KR100557608B1 (ko) * | 1999-02-10 | 2006-03-10 | 주식회사 하이닉스반도체 | 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물 |
| KR100557609B1 (ko) * | 1999-02-22 | 2006-03-10 | 주식회사 하이닉스반도체 | 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물 |
| KR100520183B1 (ko) * | 1999-08-23 | 2005-10-10 | 주식회사 하이닉스반도체 | 두 개의 이중결합을 가지는 가교제를 단량체로 포함하는 포토레지스트용 공중합체 |
| US6818376B2 (en) | 1999-08-23 | 2004-11-16 | Hynix Semiconductor Inc. | Cross-linker monomer comprising double bond and photoresist copolymer containing the same |
| KR100546110B1 (ko) * | 2000-01-21 | 2006-01-24 | 주식회사 하이닉스반도체 | 포토레지스트 가교제 및 이를 함유하는 포토레지스트 조성물 |
| US6664022B1 (en) * | 2000-08-25 | 2003-12-16 | Shipley Company, L.L.C. | Photoacid generators and photoresists comprising same |
| KR20020082006A (ko) * | 2001-04-23 | 2002-10-30 | 금호석유화학 주식회사 | 신규한 산-민감성 중합체 및 이를 함유하는 레지스트 조성물 |
| US7138218B2 (en) | 2001-12-18 | 2006-11-21 | Hynix Semiconductor Inc. | Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator |
| US7338742B2 (en) | 2003-10-08 | 2008-03-04 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
| US7270937B2 (en) | 2003-10-17 | 2007-09-18 | Hynix Semiconductor Inc. | Over-coating composition for photoresist and process for forming photoresist pattern using the same |
| KR100680405B1 (ko) | 2003-11-19 | 2007-02-08 | 주식회사 하이닉스반도체 | Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법 |
| JP4979477B2 (ja) * | 2004-03-08 | 2012-07-18 | 三菱レイヨン株式会社 | レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物 |
| EP1750176A3 (en) * | 2005-08-03 | 2011-04-20 | JSR Corporation | Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material |
| KR100694412B1 (ko) | 2006-02-24 | 2007-03-12 | 주식회사 하이닉스반도체 | 반도체소자의 미세패턴 형성방법 |
| US7745339B2 (en) | 2006-02-24 | 2010-06-29 | Hynix Semiconductor Inc. | Method for forming fine pattern of semiconductor device |
| KR20100014830A (ko) * | 2007-02-26 | 2010-02-11 | 제이에스알 가부시끼가이샤 | 미세 패턴 형성용 수지 조성물 및 미세 패턴 형성 방법 |
| KR20180061217A (ko) * | 2015-09-28 | 2018-06-07 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | 절단가능한 가교결합제를 포함하는 패턴화된 필름 물품 및 방법 |
| CN116102938B (zh) * | 2021-11-09 | 2023-10-20 | 上海新阳半导体材料股份有限公司 | 一种深紫外光刻用底部抗反射涂层及其制备方法和应用 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1275471A (en) * | 1969-06-04 | 1972-05-24 | Du Pont | Improvements relating to photo-resists |
| GB1277674A (en) * | 1969-08-04 | 1972-06-14 | Ford Motor Co | Painting of polyolefins |
| JPS5713444A (en) * | 1980-06-27 | 1982-01-23 | Tamura Kaken Kk | Photosensitive composition |
| US4329419A (en) * | 1980-09-03 | 1982-05-11 | E. I. Du Pont De Nemours And Company | Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors |
| WO1992007022A1 (en) * | 1990-10-23 | 1992-04-30 | Atomic Energy Of Canada Limited | Process for the preparation of cellulosic fibre-reinforced thermoplastic composite materials |
| KR100384746B1 (ko) * | 1994-09-13 | 2003-08-25 | 제온 코포레이션 | 감광성 폴리이미드 수지 조성물 |
-
1998
- 1998-12-31 KR KR10-1998-0063793A patent/KR100362937B1/ko not_active IP Right Cessation
-
1999
- 1999-12-10 TW TW088121653A patent/TWI222968B/zh not_active IP Right Cessation
- 1999-12-15 DE DE19960506A patent/DE19960506A1/de not_active Withdrawn
- 1999-12-15 GB GB9929650A patent/GB2345286B/en not_active Expired - Fee Related
- 1999-12-21 IT IT1999TO001137A patent/IT1308679B1/it active
- 1999-12-22 NL NL1013916A patent/NL1013916C2/nl not_active IP Right Cessation
- 1999-12-22 JP JP36514699A patent/JP4001445B2/ja not_active Expired - Fee Related
- 1999-12-24 CN CNB991266870A patent/CN1303114C/zh not_active Expired - Lifetime
- 1999-12-29 FR FR9916643A patent/FR2788062B1/fr not_active Expired - Fee Related
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