JP2000101019A - ウェ―ハ・ボンディングおよびシ―リング・システムおよび方法 - Google Patents

ウェ―ハ・ボンディングおよびシ―リング・システムおよび方法

Info

Publication number
JP2000101019A
JP2000101019A JP11213164A JP21316499A JP2000101019A JP 2000101019 A JP2000101019 A JP 2000101019A JP 11213164 A JP11213164 A JP 11213164A JP 21316499 A JP21316499 A JP 21316499A JP 2000101019 A JP2000101019 A JP 2000101019A
Authority
JP
Japan
Prior art keywords
wafer
gasket
wafers
vacuum
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11213164A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000101019A5 (enExample
Inventor
Paul P Merchant
ポール・ピー・マーチャント
Storrs Hoen
ストアズ・ホーン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2000101019A publication Critical patent/JP2000101019A/ja
Publication of JP2000101019A5 publication Critical patent/JP2000101019A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Measuring Fluid Pressure (AREA)
JP11213164A 1998-07-29 1999-07-28 ウェ―ハ・ボンディングおよびシ―リング・システムおよび方法 Pending JP2000101019A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/124,311 US6090687A (en) 1998-07-29 1998-07-29 System and method for bonding and sealing microfabricated wafers to form a single structure having a vacuum chamber therein
US124,311 1998-07-29

Publications (2)

Publication Number Publication Date
JP2000101019A true JP2000101019A (ja) 2000-04-07
JP2000101019A5 JP2000101019A5 (enExample) 2006-08-17

Family

ID=22414109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11213164A Pending JP2000101019A (ja) 1998-07-29 1999-07-28 ウェ―ハ・ボンディングおよびシ―リング・システムおよび方法

Country Status (4)

Country Link
US (1) US6090687A (enExample)
EP (1) EP0982773B1 (enExample)
JP (1) JP2000101019A (enExample)
DE (1) DE69920606T2 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007512707A (ja) * 2003-11-26 2007-05-17 アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド 基板間においてプレスされるコンプライアント素子を有するデバイス
JP2008518467A (ja) * 2004-10-29 2008-05-29 アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド 集積回路のパッケージング及び製造
JP2012516055A (ja) * 2009-01-21 2012-07-12 フリースケール セミコンダクター インコーポレイテッド 金属ゲルマニウムシリコン材料を用いた基板接合
KR101272675B1 (ko) * 2010-08-20 2013-06-11 소이텍 저온 본딩 공정
WO2013141091A1 (ja) * 2012-03-23 2013-09-26 オリンパス株式会社 積層型半導体装置およびその製造方法
JP2020191467A (ja) * 2010-06-30 2020-11-26 キヤノン株式会社 固体撮像装置

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US6168963B1 (en) * 1999-06-21 2001-01-02 Lucent Technologies, Inc. System for adhering parts
KR100343211B1 (ko) * 1999-11-04 2002-07-10 윤종용 웨이퍼 레벨 진공 패키징이 가능한 ｍｅｍｓ의 구조물의제작방법
US6669802B2 (en) * 2000-12-21 2003-12-30 Spenco Composite riser
US6584416B2 (en) * 2001-08-16 2003-06-24 Hewlett-Packard Development Company System and methods for forming data storage devices
DE10157848B4 (de) * 2001-11-24 2005-01-13 Eads Deutschland Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements mit abgeschlossenem Innenraum und mikromechanisches Bauelement mit abgeschlossenem Innenraum
FR2834283B1 (fr) 2001-12-28 2005-06-24 Commissariat Energie Atomique Procede et zone de scellement entre deux substrats d'une microstructure
AU2003209564A1 (en) * 2002-03-19 2003-09-29 Koninklijke Philips Electronics N.V. Chip stack with intermediate cavity
US20040082058A1 (en) * 2002-10-29 2004-04-29 Arthur Schleifer Array hybridization apparatus and method for making uniform sample volumes
US7275292B2 (en) * 2003-03-07 2007-10-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method for fabricating an acoustical resonator on a substrate
US20040214310A1 (en) * 2003-04-25 2004-10-28 Parker Russell A. Apparatus and method for array alignment
DE10323394B4 (de) * 2003-05-20 2006-09-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen einer elektrischen Kontaktierung zwischen zwei Halbleiterstücken und Verfahren zum Herstellen einer Anordnung von Halbleiterstücken
US6946928B2 (en) * 2003-10-30 2005-09-20 Agilent Technologies, Inc. Thin-film acoustically-coupled transformer
US20050196761A1 (en) * 2004-03-08 2005-09-08 Thompson Allen C. Array hybridization apparatus and method
US20050202445A1 (en) * 2004-03-09 2005-09-15 Thompson Allen C. Thermoplastic array hybridization apparatus and method
US7615833B2 (en) * 2004-07-13 2009-11-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator package and method of fabricating same
US7388454B2 (en) 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
DE102004056970B4 (de) * 2004-11-25 2008-07-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen einer elektrischen Kontaktierung zwischen zwei Halbleiterstücken durch ein mechanisches Element
US7202560B2 (en) 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US7791434B2 (en) 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
US7369013B2 (en) 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
US20070004079A1 (en) * 2005-06-30 2007-01-04 Geefay Frank S Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips
US7737807B2 (en) * 2005-10-18 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
DE102006000687B4 (de) * 2006-01-03 2010-09-09 Thallner, Erich, Dipl.-Ing. Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers
US7746677B2 (en) * 2006-03-09 2010-06-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. AC-DC converter circuit and power supply
US20070210748A1 (en) * 2006-03-09 2007-09-13 Mark Unkrich Power supply and electronic device having integrated power supply
US7479685B2 (en) 2006-03-10 2009-01-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Electronic device on substrate with cavity and mitigated parasitic leakage path
US20080164606A1 (en) * 2007-01-08 2008-07-10 Christoffer Graae Greisen Spacers for wafer bonding
US7732977B2 (en) 2008-04-30 2010-06-08 Avago Technologies Wireless Ip (Singapore) Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
US7855618B2 (en) 2008-04-30 2010-12-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator electrical impedance transformers
US8202741B2 (en) * 2009-03-04 2012-06-19 Koninklijke Philips Electronics N.V. Method of bonding a semiconductor device using a compliant bonding structure
EP2230683B1 (de) 2009-03-18 2016-03-16 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Wafers von einem Träger
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
EP2667407B1 (de) 2009-09-01 2019-01-23 EV Group GmbH Verfahren zum Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat mittels eines Lösungsmittels und Schallwellen durch Verformung eines auf einem Filmrahmen montierten flexiblen Films
US8193877B2 (en) 2009-11-30 2012-06-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer with negative phase shifting circuit
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
EP2381464B1 (de) 2010-04-23 2012-09-05 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal

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JPS5988864A (ja) * 1982-11-12 1984-05-22 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4769272A (en) * 1987-03-17 1988-09-06 National Semiconductor Corporation Ceramic lid hermetic seal package structure
US5262347A (en) * 1991-08-14 1993-11-16 Bell Communications Research, Inc. Palladium welding of a semiconductor body
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JP3613838B2 (ja) * 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007512707A (ja) * 2003-11-26 2007-05-17 アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド 基板間においてプレスされるコンプライアント素子を有するデバイス
JP2008518467A (ja) * 2004-10-29 2008-05-29 アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド 集積回路のパッケージング及び製造
JP2012516055A (ja) * 2009-01-21 2012-07-12 フリースケール セミコンダクター インコーポレイテッド 金属ゲルマニウムシリコン材料を用いた基板接合
JP2020191467A (ja) * 2010-06-30 2020-11-26 キヤノン株式会社 固体撮像装置
JP2022132369A (ja) * 2010-06-30 2022-09-08 キヤノン株式会社 固体撮像装置
KR101272675B1 (ko) * 2010-08-20 2013-06-11 소이텍 저온 본딩 공정
US8790992B2 (en) 2010-08-20 2014-07-29 Soitec Low-temperature bonding process
US9117686B2 (en) 2010-08-20 2015-08-25 Soitec 3D integrated heterostructures having low-temperature bonded interfaces with high bonding energy
WO2013141091A1 (ja) * 2012-03-23 2013-09-26 オリンパス株式会社 積層型半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE69920606D1 (de) 2004-11-04
DE69920606T2 (de) 2005-10-06
EP0982773B1 (en) 2004-09-29
EP0982773A3 (en) 2000-12-20
EP0982773A2 (en) 2000-03-01
US6090687A (en) 2000-07-18

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