DE69920606T2 - Anordnung mit verbundenen dichten Wafern, die eine Struktur mit einer Vakuumkammer bilden und Verfahren zu ihrer Herstellung - Google Patents

Anordnung mit verbundenen dichten Wafern, die eine Struktur mit einer Vakuumkammer bilden und Verfahren zu ihrer Herstellung Download PDF

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Publication number
DE69920606T2
DE69920606T2 DE69920606T DE69920606T DE69920606T2 DE 69920606 T2 DE69920606 T2 DE 69920606T2 DE 69920606 T DE69920606 T DE 69920606T DE 69920606 T DE69920606 T DE 69920606T DE 69920606 T2 DE69920606 T2 DE 69920606T2
Authority
DE
Germany
Prior art keywords
wafer
seal
wafers
palladium
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69920606T
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German (de)
English (en)
Other versions
DE69920606D1 (de
Inventor
Paul P. Belmont Merchant
Storrs Brisbane Hoen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
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Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of DE69920606D1 publication Critical patent/DE69920606D1/de
Application granted granted Critical
Publication of DE69920606T2 publication Critical patent/DE69920606T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Measuring Fluid Pressure (AREA)
DE69920606T 1998-07-29 1999-03-18 Anordnung mit verbundenen dichten Wafern, die eine Struktur mit einer Vakuumkammer bilden und Verfahren zu ihrer Herstellung Expired - Fee Related DE69920606T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/124,311 US6090687A (en) 1998-07-29 1998-07-29 System and method for bonding and sealing microfabricated wafers to form a single structure having a vacuum chamber therein
US124311 1998-07-29

Publications (2)

Publication Number Publication Date
DE69920606D1 DE69920606D1 (de) 2004-11-04
DE69920606T2 true DE69920606T2 (de) 2005-10-06

Family

ID=22414109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69920606T Expired - Fee Related DE69920606T2 (de) 1998-07-29 1999-03-18 Anordnung mit verbundenen dichten Wafern, die eine Struktur mit einer Vakuumkammer bilden und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) US6090687A (enExample)
EP (1) EP0982773B1 (enExample)
JP (1) JP2000101019A (enExample)
DE (1) DE69920606T2 (enExample)

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FR2834283B1 (fr) 2001-12-28 2005-06-24 Commissariat Energie Atomique Procede et zone de scellement entre deux substrats d'une microstructure
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US20040082058A1 (en) * 2002-10-29 2004-04-29 Arthur Schleifer Array hybridization apparatus and method for making uniform sample volumes
US7275292B2 (en) * 2003-03-07 2007-10-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method for fabricating an acoustical resonator on a substrate
US20040214310A1 (en) * 2003-04-25 2004-10-28 Parker Russell A. Apparatus and method for array alignment
DE10323394B4 (de) * 2003-05-20 2006-09-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen einer elektrischen Kontaktierung zwischen zwei Halbleiterstücken und Verfahren zum Herstellen einer Anordnung von Halbleiterstücken
US6946928B2 (en) * 2003-10-30 2005-09-20 Agilent Technologies, Inc. Thin-film acoustically-coupled transformer
US7294919B2 (en) * 2003-11-26 2007-11-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Device having a complaint element pressed between substrates
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US20050202445A1 (en) * 2004-03-09 2005-09-15 Thompson Allen C. Thermoplastic array hybridization apparatus and method
US7615833B2 (en) * 2004-07-13 2009-11-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator package and method of fabricating same
US7388454B2 (en) 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
US7274050B2 (en) * 2004-10-29 2007-09-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Packaging and manufacturing of an integrated circuit
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
DE102004056970B4 (de) * 2004-11-25 2008-07-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen einer elektrischen Kontaktierung zwischen zwei Halbleiterstücken durch ein mechanisches Element
US7202560B2 (en) 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US7791434B2 (en) 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
US7369013B2 (en) 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
US20070004079A1 (en) * 2005-06-30 2007-01-04 Geefay Frank S Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips
US7737807B2 (en) * 2005-10-18 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
DE102006000687B4 (de) * 2006-01-03 2010-09-09 Thallner, Erich, Dipl.-Ing. Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers
US7746677B2 (en) * 2006-03-09 2010-06-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. AC-DC converter circuit and power supply
US20070210748A1 (en) * 2006-03-09 2007-09-13 Mark Unkrich Power supply and electronic device having integrated power supply
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US7732977B2 (en) 2008-04-30 2010-06-08 Avago Technologies Wireless Ip (Singapore) Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
US7855618B2 (en) 2008-04-30 2010-12-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator electrical impedance transformers
US8058143B2 (en) * 2009-01-21 2011-11-15 Freescale Semiconductor, Inc. Substrate bonding with metal germanium silicon material
US8202741B2 (en) * 2009-03-04 2012-06-19 Koninklijke Philips Electronics N.V. Method of bonding a semiconductor device using a compliant bonding structure
EP2230683B1 (de) 2009-03-18 2016-03-16 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Wafers von einem Träger
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
EP2667407B1 (de) 2009-09-01 2019-01-23 EV Group GmbH Verfahren zum Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat mittels eines Lösungsmittels und Schallwellen durch Verformung eines auf einem Filmrahmen montierten flexiblen Films
US8193877B2 (en) 2009-11-30 2012-06-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer with negative phase shifting circuit
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
EP2381464B1 (de) 2010-04-23 2012-09-05 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat
JP6342033B2 (ja) * 2010-06-30 2018-06-13 キヤノン株式会社 固体撮像装置
FR2963982B1 (fr) 2010-08-20 2012-09-28 Soitec Silicon On Insulator Procede de collage a basse temperature
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
JP5984912B2 (ja) * 2012-03-23 2016-09-06 オリンパス株式会社 積層型半導体の製造方法

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Also Published As

Publication number Publication date
DE69920606D1 (de) 2004-11-04
EP0982773B1 (en) 2004-09-29
EP0982773A3 (en) 2000-12-20
EP0982773A2 (en) 2000-03-01
JP2000101019A (ja) 2000-04-07
US6090687A (en) 2000-07-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D. STAATES, US

8339 Ceased/non-payment of the annual fee