JP2000100811A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

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Publication number
JP2000100811A
JP2000100811A JP10263853A JP26385398A JP2000100811A JP 2000100811 A JP2000100811 A JP 2000100811A JP 10263853 A JP10263853 A JP 10263853A JP 26385398 A JP26385398 A JP 26385398A JP 2000100811 A JP2000100811 A JP 2000100811A
Authority
JP
Japan
Prior art keywords
film
refractive index
sin film
sin
plasma cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10263853A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000100811A5 (enExample
Inventor
Shinya Imoto
晋也 井元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP10263853A priority Critical patent/JP2000100811A/ja
Publication of JP2000100811A publication Critical patent/JP2000100811A/ja
Publication of JP2000100811A5 publication Critical patent/JP2000100811A5/ja
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)
JP10263853A 1998-09-18 1998-09-18 半導体装置の製造方法 Pending JP2000100811A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10263853A JP2000100811A (ja) 1998-09-18 1998-09-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10263853A JP2000100811A (ja) 1998-09-18 1998-09-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2000100811A true JP2000100811A (ja) 2000-04-07
JP2000100811A5 JP2000100811A5 (enExample) 2005-08-25

Family

ID=17395148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10263853A Pending JP2000100811A (ja) 1998-09-18 1998-09-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2000100811A (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443908B1 (ko) * 2001-10-25 2004-08-09 삼성전자주식회사 플라즈마 화학기상증착장치 및 이를 이용한나이트라이드막 형성방법
JP2005534181A (ja) * 2002-07-19 2005-11-10 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
US7208235B2 (en) 2002-01-31 2007-04-24 Nippon Sheet Glass Company, Limited Method for forming transparent thin film, transparent thin film formed by the method, and transparent substrate with transparent thin film
JP2008166518A (ja) * 2006-12-28 2008-07-17 Toshiba Corp 不揮発性半導体記憶装置
JP2009076874A (ja) * 2007-08-31 2009-04-09 Sumitomo Electric Ind Ltd ショットキーバリアダイオードおよびその製造方法
US7629267B2 (en) 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US7674728B2 (en) 2004-09-03 2010-03-09 Asm America, Inc. Deposition from liquid sources
JP2010056100A (ja) * 2008-08-26 2010-03-11 Sumitomo Electric Ind Ltd ショットキーバリアダイオード
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7718518B2 (en) 2005-12-16 2010-05-18 Asm International N.V. Low temperature doped silicon layer formation
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
JP2012151443A (ja) * 2011-01-19 2012-08-09 Samsung Electronics Co Ltd 薄膜トランジスター表示板およびその製造方法
JP2015128174A (ja) * 2002-05-17 2015-07-09 株式会社半導体エネルギー研究所 半導体装置
JP2017183202A (ja) * 2016-03-31 2017-10-05 株式会社Ｊｏｌｅｄ 有機ｅｌ表示パネル

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443908B1 (ko) * 2001-10-25 2004-08-09 삼성전자주식회사 플라즈마 화학기상증착장치 및 이를 이용한나이트라이드막 형성방법
US7208235B2 (en) 2002-01-31 2007-04-24 Nippon Sheet Glass Company, Limited Method for forming transparent thin film, transparent thin film formed by the method, and transparent substrate with transparent thin film
US9847355B2 (en) 2002-05-17 2017-12-19 Semiconductor Energy Laboratory Co., Ltd. Silicon nitride film, and semiconductor device
JP2015128174A (ja) * 2002-05-17 2015-07-09 株式会社半導体エネルギー研究所 半導体装置
JP2010283357A (ja) * 2002-07-19 2010-12-16 Asm America Inc 超高品質シリコン含有化合物層の形成方法
JP2005534181A (ja) * 2002-07-19 2005-11-10 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
US7964513B2 (en) 2002-07-19 2011-06-21 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7674728B2 (en) 2004-09-03 2010-03-09 Asm America, Inc. Deposition from liquid sources
US7921805B2 (en) 2004-09-03 2011-04-12 Asm America, Inc. Deposition from liquid sources
US7629267B2 (en) 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US7718518B2 (en) 2005-12-16 2010-05-18 Asm International N.V. Low temperature doped silicon layer formation
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
JP2008166518A (ja) * 2006-12-28 2008-07-17 Toshiba Corp 不揮発性半導体記憶装置
JP2009076874A (ja) * 2007-08-31 2009-04-09 Sumitomo Electric Ind Ltd ショットキーバリアダイオードおよびその製造方法
JP2010056100A (ja) * 2008-08-26 2010-03-11 Sumitomo Electric Ind Ltd ショットキーバリアダイオード
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
JP2012151443A (ja) * 2011-01-19 2012-08-09 Samsung Electronics Co Ltd 薄膜トランジスター表示板およびその製造方法
JP2017183202A (ja) * 2016-03-31 2017-10-05 株式会社Ｊｏｌｅｄ 有機ｅｌ表示パネル

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