JP2000100811A5 - - Google Patents
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- Publication number
- JP2000100811A5 JP2000100811A5 JP1998263853A JP26385398A JP2000100811A5 JP 2000100811 A5 JP2000100811 A5 JP 2000100811A5 JP 1998263853 A JP1998263853 A JP 1998263853A JP 26385398 A JP26385398 A JP 26385398A JP 2000100811 A5 JP2000100811 A5 JP 2000100811A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- semiconductor device
- vapor phase
- phase growth
- growth method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000001947 vapour-phase growth Methods 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10263853A JP2000100811A (ja) | 1998-09-18 | 1998-09-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10263853A JP2000100811A (ja) | 1998-09-18 | 1998-09-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000100811A JP2000100811A (ja) | 2000-04-07 |
| JP2000100811A5 true JP2000100811A5 (enExample) | 2005-08-25 |
Family
ID=17395148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10263853A Pending JP2000100811A (ja) | 1998-09-18 | 1998-09-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000100811A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100443908B1 (ko) * | 2001-10-25 | 2004-08-09 | 삼성전자주식회사 | 플라즈마 화학기상증착장치 및 이를 이용한나이트라이드막 형성방법 |
| JP2003221257A (ja) | 2002-01-31 | 2003-08-05 | Nippon Sheet Glass Co Ltd | 透明薄膜の成形方法およびそれを備える透明基体 |
| TWI288443B (en) * | 2002-05-17 | 2007-10-11 | Semiconductor Energy Lab | SiN film, semiconductor device, and the manufacturing method thereof |
| JP5005170B2 (ja) * | 2002-07-19 | 2012-08-22 | エーエスエム アメリカ インコーポレイテッド | 超高品質シリコン含有化合物層の形成方法 |
| US7253084B2 (en) | 2004-09-03 | 2007-08-07 | Asm America, Inc. | Deposition from liquid sources |
| US7629267B2 (en) | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
| WO2007075369A1 (en) | 2005-12-16 | 2007-07-05 | Asm International N.V. | Low temperature doped silicon layer formation |
| US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
| JP2008166518A (ja) * | 2006-12-28 | 2008-07-17 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP5446161B2 (ja) * | 2007-08-31 | 2014-03-19 | 住友電気工業株式会社 | ショットキーバリアダイオードおよびその製造方法 |
| JP5445899B2 (ja) * | 2008-08-26 | 2014-03-19 | 住友電気工業株式会社 | ショットキーバリアダイオード |
| US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
| KR101832361B1 (ko) * | 2011-01-19 | 2018-04-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP6613196B2 (ja) * | 2016-03-31 | 2019-11-27 | 株式会社Ｊｏｌｅｄ | 有機ｅｌ表示パネル |
-
1998
- 1998-09-18 JP JP10263853A patent/JP2000100811A/ja active Pending
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