JP2000091703A5 - - Google Patents

Download PDF

Info

Publication number
JP2000091703A5
JP2000091703A5 JP1998258014A JP25801498A JP2000091703A5 JP 2000091703 A5 JP2000091703 A5 JP 2000091703A5 JP 1998258014 A JP1998258014 A JP 1998258014A JP 25801498 A JP25801498 A JP 25801498A JP 2000091703 A5 JP2000091703 A5 JP 2000091703A5
Authority
JP
Japan
Prior art keywords
light emitting
manufacturing
emitting device
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998258014A
Other languages
English (en)
Japanese (ja)
Other versions
JP4292600B2 (ja
JP2000091703A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP25801498A priority Critical patent/JP4292600B2/ja
Priority claimed from JP25801498A external-priority patent/JP4292600B2/ja
Publication of JP2000091703A publication Critical patent/JP2000091703A/ja
Publication of JP2000091703A5 publication Critical patent/JP2000091703A5/ja
Application granted granted Critical
Publication of JP4292600B2 publication Critical patent/JP4292600B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP25801498A 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法 Expired - Fee Related JP4292600B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25801498A JP4292600B2 (ja) 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25801498A JP4292600B2 (ja) 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2000091703A JP2000091703A (ja) 2000-03-31
JP2000091703A5 true JP2000091703A5 (enrdf_load_html_response) 2005-10-20
JP4292600B2 JP4292600B2 (ja) 2009-07-08

Family

ID=17314339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25801498A Expired - Fee Related JP4292600B2 (ja) 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法

Country Status (1)

Country Link
JP (1) JP4292600B2 (enrdf_load_html_response)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001339102A (ja) * 2000-05-29 2001-12-07 Toyota Central Res & Dev Lab Inc 窒化物系化合物半導体発光素子
DE10055710A1 (de) * 2000-11-10 2002-05-23 Horst P Strunk Herstellungsverfahren für ein optoelektronisches Halbleiterbauelement auf der Basis von seltenerddotiertem, amorphem III-N-Halbleitermaterial
JP4063520B2 (ja) 2000-11-30 2008-03-19 日本碍子株式会社 半導体発光素子
JP3872327B2 (ja) 2000-12-04 2007-01-24 日本碍子株式会社 半導体発光素子
JP3888668B2 (ja) 2000-12-28 2007-03-07 日本碍子株式会社 半導体発光素子
JP2002208730A (ja) * 2001-01-09 2002-07-26 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
KR20010044594A (ko) * 2001-03-09 2001-06-05 김상식 광통신용 희토류 반도체 소자
JP2002289927A (ja) * 2001-03-27 2002-10-04 Ngk Insulators Ltd 発光素子
JP3791765B2 (ja) * 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US7569863B2 (en) * 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
JP2005268770A (ja) * 2004-02-19 2005-09-29 Matsushita Electric Ind Co Ltd 白色発光素子及び白色光源
JP2005268775A (ja) * 2004-02-19 2005-09-29 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法
US20090261364A1 (en) * 2004-08-31 2009-10-22 Kyota Ueda Fluorescent substance
FR2904730A1 (fr) * 2006-10-04 2008-02-08 Commissariat Energie Atomique Procede pour la realisation de diodes electroluminescentes a partir de semi-conducteurs nitrures.
WO2008144337A1 (en) * 2007-05-16 2008-11-27 Osram Sylvania Inc. Light emitting diode based on multiple double-heterostructures (quantum wells) with rare earth doped active regions
KR101383489B1 (ko) * 2009-05-07 2014-04-08 오사카 유니버시티 적색 발광 반도체 소자 및 적색 발광 반도체 소자의 제조방법
JP5943407B2 (ja) * 2011-03-07 2016-07-05 国立大学法人豊橋技術科学大学 窒化物半導体発光素子及びその製造方法
WO2014030516A1 (ja) * 2012-08-23 2014-02-27 国立大学法人大阪大学 窒化物半導体素子用基板とその製造方法、および赤色発光半導体素子とその製造方法
WO2022181432A1 (ja) * 2021-02-25 2022-09-01 国立大学法人大阪大学 希土類添加窒化物半導体素子とその製造方法、半導体ｌｅｄ、半導体レーザー
CN116705947B (zh) * 2023-07-27 2023-10-17 江西兆驰半导体有限公司 基于硅衬底的led外延片及其制备方法、led

Similar Documents

Publication Publication Date Title
JP2000091703A5 (enrdf_load_html_response)
JP3293035B2 (ja) 窒化ガリウム系化合物半導体結晶の成長方法及び窒化ガリウム系化合物半導体装置
JP2004193617A5 (enrdf_load_html_response)
EP1065734A3 (en) Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof.
JP2000044400A5 (enrdf_load_html_response)
EP1391941A4 (en) METHOD FOR PRODUCING LUMINESCENT ELEMENT
TWI252595B (en) Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof
CN102959739A (zh) Iii族氮化物半导体器件及其制造方法
WO2003043097A1 (en) Ultraviolet emitting device
CN114497303B (zh) 长波长led同质外延结构、其制备方法及应用
EP1220333A3 (en) Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device
JP2000091637A (ja) 半導体発光素子の製法
JP2002368260A (ja) 化合物半導体発光素子、その製造方法、ランプ及び光源
JP4063801B2 (ja) 発光ダイオード
JP2000164512A5 (enrdf_load_html_response)
JP3571401B2 (ja) 半導体発光素子の製法
JP2004288934A (ja) サファイア基板とその製造方法、エピタキシャル基板および半導体装置とその製造方法
JP2000228535A (ja) 半導体素子およびその製造方法
JPH0940490A (ja) 窒化ガリウム結晶の製造方法
JP2004087565A5 (enrdf_load_html_response)
JP2995186B1 (ja) 半導体発光素子
JP3566476B2 (ja) 半導体発光素子の製造方法
JP2003309074A5 (enrdf_load_html_response)
WO2006009372A1 (en) Method of controlling the conductivity of n-type nitride semiconductor layer
JPH11346035A (ja) 窒化ガリウム系化合物半導体発光素子の製造方法