JP2000076620A - 薄膜磁気ヘッドおよびその製造方法 - Google Patents
薄膜磁気ヘッドおよびその製造方法Info
- Publication number
- JP2000076620A JP2000076620A JP10243942A JP24394298A JP2000076620A JP 2000076620 A JP2000076620 A JP 2000076620A JP 10243942 A JP10243942 A JP 10243942A JP 24394298 A JP24394298 A JP 24394298A JP 2000076620 A JP2000076620 A JP 2000076620A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- magnetic pole
- thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 158
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 10
- 239000011147 inorganic material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 27
- 230000004907 flux Effects 0.000 claims description 23
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000004804 winding Methods 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 2
- 238000009751 slip forming Methods 0.000 claims 2
- 239000010408 film Substances 0.000 abstract description 75
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 32
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 320
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 22
- 238000000206 photolithography Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910000889 permalloy Inorganic materials 0.000 description 9
- 238000007747 plating Methods 0.000 description 8
- 239000002131 composite material Substances 0.000 description 7
- 230000001939 inductive effect Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- KCZFLPPCFOHPNI-UHFFFAOYSA-N alumane;iron Chemical compound [AlH3].[Fe] KCZFLPPCFOHPNI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910001337 iron nitride Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10243942A JP2000076620A (ja) | 1998-08-28 | 1998-08-28 | 薄膜磁気ヘッドおよびその製造方法 |
| US09/220,703 US6317288B1 (en) | 1998-08-28 | 1998-12-24 | Thin-film magnetic head and method of manufacturing same |
| US09/953,365 US6668442B2 (en) | 1998-08-28 | 2001-09-17 | Method of manufacturing a thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10243942A JP2000076620A (ja) | 1998-08-28 | 1998-08-28 | 薄膜磁気ヘッドおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000076620A true JP2000076620A (ja) | 2000-03-14 |
| JP2000076620A5 JP2000076620A5 (enExample) | 2005-06-09 |
Family
ID=17111338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10243942A Pending JP2000076620A (ja) | 1998-08-28 | 1998-08-28 | 薄膜磁気ヘッドおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000076620A (enExample) |
-
1998
- 1998-08-28 JP JP10243942A patent/JP2000076620A/ja active Pending
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