JP2000058484A5 - - Google Patents

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Publication number
JP2000058484A5
JP2000058484A5 JP1998230007A JP23000798A JP2000058484A5 JP 2000058484 A5 JP2000058484 A5 JP 2000058484A5 JP 1998230007 A JP1998230007 A JP 1998230007A JP 23000798 A JP23000798 A JP 23000798A JP 2000058484 A5 JP2000058484 A5 JP 2000058484A5
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JP
Japan
Prior art keywords
plasma
substrate
titanium
hydrogen
forming
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JP1998230007A
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English (en)
Japanese (ja)
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JP2000058484A (ja
JP4319269B2 (ja
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Priority to JP23000798A priority Critical patent/JP4319269B2/ja
Priority claimed from JP23000798A external-priority patent/JP4319269B2/ja
Publication of JP2000058484A publication Critical patent/JP2000058484A/ja
Publication of JP2000058484A5 publication Critical patent/JP2000058484A5/ja
Application granted granted Critical
Publication of JP4319269B2 publication Critical patent/JP4319269B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP23000798A 1998-07-31 1998-07-31 プラズマcvdによる薄膜形成方法 Expired - Fee Related JP4319269B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23000798A JP4319269B2 (ja) 1998-07-31 1998-07-31 プラズマcvdによる薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23000798A JP4319269B2 (ja) 1998-07-31 1998-07-31 プラズマcvdによる薄膜形成方法

Publications (3)

Publication Number Publication Date
JP2000058484A JP2000058484A (ja) 2000-02-25
JP2000058484A5 true JP2000058484A5 (enExample) 2005-10-27
JP4319269B2 JP4319269B2 (ja) 2009-08-26

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ID=16901145

Family Applications (1)

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JP23000798A Expired - Fee Related JP4319269B2 (ja) 1998-07-31 1998-07-31 プラズマcvdによる薄膜形成方法

Country Status (1)

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JP (1) JP4319269B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100762863B1 (ko) * 2000-06-30 2007-10-08 주식회사 하이닉스반도체 확산방지 티타늄-실리콘-질소 막을 이용한 구리금속배선방법
JP2002203810A (ja) * 2000-12-28 2002-07-19 Tokyo Electron Ltd 半導体装置の製造方法および半導体装置ならびに半導体装置の製造装置
JP2002363759A (ja) * 2001-06-12 2002-12-18 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法及び微量ガスの導入時期検出方法
KR20090009938A (ko) 2006-05-25 2009-01-23 닛본 덴끼 가부시끼가이샤 금속 화합물층의 형성 방법, 반도체 장치의 제조 방법 및 금속 화합물층의 형성 장치
JP5193494B2 (ja) * 2007-04-27 2013-05-08 東京エレクトロン株式会社 Ti膜の成膜方法および記憶媒体
JP6426893B2 (ja) * 2013-12-25 2018-11-21 東京エレクトロン株式会社 コンタクト層の形成方法
KR101872813B1 (ko) 2016-12-26 2018-06-29 주식회사 인코어드 테크놀로지스 댁내 구성원의 이상 상태 판단 방법 및 장치
DE102019129788A1 (de) * 2019-11-05 2021-05-06 Aixtron Se Verwendung eines CVD Reaktors zum Abscheiden zweidimensionaler Schichten

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