JP4319269B2 - プラズマｃｖｄによる薄膜形成方法 - Google Patents

プラズマｃｖｄによる薄膜形成方法 Download PDF

Info

Publication number
JP4319269B2
JP4319269B2 JP23000798A JP23000798A JP4319269B2 JP 4319269 B2 JP4319269 B2 JP 4319269B2 JP 23000798 A JP23000798 A JP 23000798A JP 23000798 A JP23000798 A JP 23000798A JP 4319269 B2 JP4319269 B2 JP 4319269B2
Authority
JP
Japan
Prior art keywords
ticl
film
titanium silicide
titanium
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23000798A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000058484A (ja
JP2000058484A5 (enExample
Inventor
茂 水野
佐藤　　誠
英樹 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP23000798A priority Critical patent/JP4319269B2/ja
Publication of JP2000058484A publication Critical patent/JP2000058484A/ja
Publication of JP2000058484A5 publication Critical patent/JP2000058484A5/ja
Application granted granted Critical
Publication of JP4319269B2 publication Critical patent/JP4319269B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP23000798A 1998-07-31 1998-07-31 プラズマｃｖｄによる薄膜形成方法 Expired - Fee Related JP4319269B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23000798A JP4319269B2 (ja) 1998-07-31 1998-07-31 プラズマｃｖｄによる薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23000798A JP4319269B2 (ja) 1998-07-31 1998-07-31 プラズマｃｖｄによる薄膜形成方法

Publications (3)

Publication Number Publication Date
JP2000058484A JP2000058484A (ja) 2000-02-25
JP2000058484A5 JP2000058484A5 (enExample) 2005-10-27
JP4319269B2 true JP4319269B2 (ja) 2009-08-26

Family

ID=16901145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23000798A Expired - Fee Related JP4319269B2 (ja) 1998-07-31 1998-07-31 プラズマｃｖｄによる薄膜形成方法

Country Status (1)

Country Link
JP (1) JP4319269B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021089424A1 (de) * 2019-11-05 2021-05-14 Aixtron Se Verwendung eines cvd-reaktors zum abscheiden zweidimensionaler schichten

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100762863B1 (ko) * 2000-06-30 2007-10-08 주식회사 하이닉스반도체 확산방지 티타늄-실리콘-질소 막을 이용한 구리금속배선방법
JP2002203810A (ja) * 2000-12-28 2002-07-19 Tokyo Electron Ltd 半導体装置の製造方法および半導体装置ならびに半導体装置の製造装置
JP2002363759A (ja) * 2001-06-12 2002-12-18 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法及び微量ガスの導入時期検出方法
KR20090009938A (ko) 2006-05-25 2009-01-23 닛본 덴끼 가부시끼가이샤 금속 화합물층의 형성 방법, 반도체 장치의 제조 방법 및 금속 화합물층의 형성 장치
JP5193494B2 (ja) * 2007-04-27 2013-05-08 東京エレクトロン株式会社 Ｔｉ膜の成膜方法および記憶媒体
JP6426893B2 (ja) * 2013-12-25 2018-11-21 東京エレクトロン株式会社 コンタクト層の形成方法
KR101872813B1 (ko) 2016-12-26 2018-06-29 주식회사 인코어드 테크놀로지스 댁내 구성원의 이상 상태 판단 방법 및 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021089424A1 (de) * 2019-11-05 2021-05-14 Aixtron Se Verwendung eines cvd-reaktors zum abscheiden zweidimensionaler schichten
CN114901865A (zh) * 2019-11-05 2022-08-12 艾克斯特朗欧洲公司 用于沉积二维的层的cvd反应器的应用
CN114901865B (zh) * 2019-11-05 2024-05-28 艾克斯特朗欧洲公司 用于沉积二维的层的cvd反应器的应用

Also Published As

Publication number Publication date
JP2000058484A (ja) 2000-02-25

Similar Documents

Publication Publication Date Title
US6143128A (en) Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
JP5294694B2 (ja) シリコン及びチタン窒化物のインサイチュ蒸着
US5326404A (en) Plasma processing apparatus
US6218301B1 (en) Deposition of tungsten films from W(CO)6
US5946594A (en) Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
US7484513B2 (en) Method of forming titanium film by CVD
JP4919535B2 (ja) ハロゲン化タンタル前駆物質からの熱的ＣＶＤ ＴａＮフイルムのプラズマ処理
US5508066A (en) Method for forming a thin film
WO2002079537A2 (en) W-cvd with fluorine-free tungsten nucleation
JPH10144628A (ja) 薄膜の改良堆積法
US20090071404A1 (en) Method of forming titanium film by CVD
WO2004059707A2 (en) A method and apparatus for forming a high quality low temperature silicon nitride film
WO2005103323A1 (en) Method and apparatus for forming a metal layer
KR100247515B1 (ko) 플라즈마 cvd에 의한 박막형성방법
JP2022516870A (ja) 化学気相堆積中におけるチタンおよびケイ化チタンの選択性を強化するための方法および装置
KR101217980B1 (ko) 순차 흐름 성막법을 이용한 텅스텐 성막 방법
JP4319269B2 (ja) プラズマｃｖｄによる薄膜形成方法
US6168837B1 (en) Chemical vapor depositions process for depositing titanium silicide films from an organometallic compound
WO2022080153A1 (ja) 基板処理方法および基板処理装置
JP3718297B2 (ja) 薄膜作製方法および薄膜作製装置
Sim et al. Method to enhance atomic-layer deposition of tungsten–nitride diffusion barrier for Cu interconnect
TWI896049B (zh) 含矽碳與氮材料之原子層沉積
JP4312291B2 (ja) プラズマｃｖｄによる成膜方法
JP3534676B2 (ja) Ｃｕ又はＣｕ含有膜の形成方法、及び装置
JPH09306870A (ja) バリア膜の形成方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050729

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050729

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061004

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090224

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090422

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090526

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090528

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120605

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130605

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees