IT9019589A0 - Memoria a carico variabile di marginarura - Google Patents

Memoria a carico variabile di marginarura

Info

Publication number
IT9019589A0
IT9019589A0 IT9019589A IT1958990A IT9019589A0 IT 9019589 A0 IT9019589 A0 IT 9019589A0 IT 9019589 A IT9019589 A IT 9019589A IT 1958990 A IT1958990 A IT 1958990A IT 9019589 A0 IT9019589 A0 IT 9019589A0
Authority
IT
Italy
Prior art keywords
marginarura
variable load
load memory
memory
variable
Prior art date
Application number
IT9019589A
Other languages
English (en)
Other versions
IT1241661B (it
IT9019589A1 (it
Inventor
George R Canepa
Original Assignee
Intel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel filed Critical Intel
Publication of IT9019589A0 publication Critical patent/IT9019589A0/it
Publication of IT9019589A1 publication Critical patent/IT9019589A1/it
Application granted granted Critical
Publication of IT1241661B publication Critical patent/IT1241661B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
IT19589A 1989-03-10 1990-03-07 Memoria a carico variabile di marginatura IT1241661B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/321,887 US5142495A (en) 1989-03-10 1989-03-10 Variable load for margin mode

Publications (3)

Publication Number Publication Date
IT9019589A0 true IT9019589A0 (it) 1990-03-07
IT9019589A1 IT9019589A1 (it) 1991-09-07
IT1241661B IT1241661B (it) 1994-01-26

Family

ID=23252467

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19589A IT1241661B (it) 1989-03-10 1990-03-07 Memoria a carico variabile di marginatura

Country Status (3)

Country Link
US (1) US5142495A (it)
JP (1) JPH02254700A (it)
IT (1) IT1241661B (it)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7137048B2 (en) 2001-02-02 2006-11-14 Rambus Inc. Method and apparatus for evaluating and optimizing a signaling system
JPH0319000A (ja) * 1989-06-15 1991-01-28 Fujitsu Ten Ltd 道路情報表示装置
JP2616109B2 (ja) * 1990-03-12 1997-06-04 日本電気株式会社 半導体記憶装置
JPH0447595A (ja) * 1990-06-15 1992-02-17 Mitsubishi Electric Corp 不揮発性半導体記憶装置
FR2665792B1 (fr) * 1990-08-08 1993-06-11 Sgs Thomson Microelectronics Memoire integree pourvue de moyens de test ameliores.
JPH04154212A (ja) * 1990-10-17 1992-05-27 Mitsubishi Electric Corp 半導体記憶装置の出力回路
US5295113A (en) * 1991-05-09 1994-03-15 Intel Corporation Flash memory source inhibit generator
JP3080743B2 (ja) * 1991-12-27 2000-08-28 日本電気株式会社 不揮発性半導体記憶装置
JP2848117B2 (ja) * 1992-05-27 1999-01-20 日本電気株式会社 半導体記憶回路
US5561635A (en) * 1992-10-13 1996-10-01 Rohm Co., Ltd. PROM IC enabling a stricter memory cell margin test
JP3236105B2 (ja) * 1993-03-17 2001-12-10 富士通株式会社 不揮発性半導体記憶装置及びその動作試験方法
US5424991A (en) * 1993-04-01 1995-06-13 Cypress Semiconductor Corporation Floating gate nonvolatile memory with uniformly erased threshold voltage
US5463586A (en) * 1993-05-28 1995-10-31 Macronix International Co., Ltd. Erase and program verification circuit for non-volatile memory
JP2606082B2 (ja) * 1993-07-02 1997-04-30 日本電気株式会社 半導体集積回路
EP0933821B1 (en) * 1994-03-03 2003-04-23 Rohm Corporation Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
DE69424771T2 (de) * 1994-03-22 2000-10-26 St Microelectronics Srl Anordnung zum Lesen einer Speicherzellenmatrix
US5594697A (en) * 1994-06-28 1997-01-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US5487045A (en) * 1994-09-16 1996-01-23 Philips Electroics North America Corporation Sense amplifier having variable sensing load for non-volatile memory
EP0726578A1 (en) * 1995-02-09 1996-08-14 International Business Machines Corporation Multiple reference sense amplifier
DE69516402T2 (de) * 1995-07-31 2000-11-02 St Microelectronics Srl Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens
US5629892A (en) * 1995-10-16 1997-05-13 Advanced Micro Devices, Inc. Flash EEPROM memory with separate reference array
FR2761191B1 (fr) * 1997-03-20 1999-06-25 Sgs Thomson Microelectronics Memoire a grille flottante adressable par mots comportant un circuit generateur de tension de reference pour la verification du contenu d'un mot
US6072840A (en) * 1997-04-18 2000-06-06 International Business Machines Corporation High speed differential CMOS sine-wave receiver with duty-cycle control means
US5898617A (en) * 1997-05-21 1999-04-27 Motorola, Inc. Sensing circuit and method
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
TW454202B (en) * 1998-07-07 2001-09-11 Dsp Group Inc A two bit per cell ROM using a two phase current sense amplifier
TW514923B (en) * 1999-07-13 2002-12-21 Sanyo Electric Co Semiconductor memory device
KR100308195B1 (ko) * 1999-09-30 2001-11-02 윤종용 반도체 메모리 장치의 감지 증폭기 회로
US7490275B2 (en) * 2001-02-02 2009-02-10 Rambus Inc. Method and apparatus for evaluating and optimizing a signaling system
US6873939B1 (en) 2001-02-02 2005-03-29 Rambus Inc. Method and apparatus for evaluating and calibrating a signaling system
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6535434B2 (en) * 2001-04-05 2003-03-18 Saifun Semiconductors Ltd. Architecture and scheme for a non-strobed read sequence
JP3734726B2 (ja) * 2001-07-17 2006-01-11 松下電器産業株式会社 読み出し専用メモリ
US7057935B2 (en) * 2001-08-30 2006-06-06 Micron Technology, Inc. Erase verify for non-volatile memory
US6791396B2 (en) * 2001-10-24 2004-09-14 Saifun Semiconductors Ltd. Stack element circuit
US6842381B2 (en) * 2002-01-25 2005-01-11 Taiwan Semiconductor Manufacturing Co. Method of marginal erasure for the testing of flash memories
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6538940B1 (en) * 2002-09-26 2003-03-25 Motorola, Inc. Method and circuitry for identifying weak bits in an MRAM
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US20040151032A1 (en) * 2003-01-30 2004-08-05 Yan Polansky High speed and low noise output buffer
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7076377B2 (en) * 2003-02-11 2006-07-11 Rambus Inc. Circuit, apparatus and method for capturing a representation of a waveform from a clock-data recovery (CDR) unit
US6885244B2 (en) 2003-03-24 2005-04-26 Saifun Semiconductors Ltd. Operational amplifier with fast rise time
US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US6906966B2 (en) 2003-06-16 2005-06-14 Saifun Semiconductors Ltd. Fast discharge for program and verification
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US7050319B2 (en) * 2003-12-03 2006-05-23 Micron Technology, Inc. Memory architecture and method of manufacture and operation thereof
JP2005209311A (ja) * 2004-01-26 2005-08-04 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7176728B2 (en) * 2004-02-10 2007-02-13 Saifun Semiconductors Ltd High voltage low power driver
US8339102B2 (en) * 2004-02-10 2012-12-25 Spansion Israel Ltd System and method for regulating loading on an integrated circuit power supply
TWI247311B (en) * 2004-03-25 2006-01-11 Elite Semiconductor Esmt Circuit and method for preventing nonvolatile memory from over erasure
US7652930B2 (en) 2004-04-01 2010-01-26 Saifun Semiconductors Ltd. Method, circuit and system for erasing one or more non-volatile memory cells
US7187595B2 (en) * 2004-06-08 2007-03-06 Saifun Semiconductors Ltd. Replenishment for internal voltage
US7256438B2 (en) * 2004-06-08 2007-08-14 Saifun Semiconductors Ltd MOS capacitor with reduced parasitic capacitance
US7190212B2 (en) * 2004-06-08 2007-03-13 Saifun Semiconductors Ltd Power-up and BGREF circuitry
US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
JP4554613B2 (ja) * 2004-07-30 2010-09-29 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 半導体装置および半導体装置にデータを書き込む方法
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US8094493B2 (en) * 2004-11-12 2012-01-10 Macronix International Co., Ltd. Memory devices and methods using improved reference cell trimming algorithms for accurate read operation window control
US7535765B2 (en) 2004-12-09 2009-05-19 Saifun Semiconductors Ltd. Non-volatile memory device and method for reading cells
US7239537B2 (en) * 2005-01-12 2007-07-03 International Business Machines Corporation Method and apparatus for current sense amplifier calibration in MRAM devices
EP1686592A3 (en) 2005-01-19 2007-04-25 Saifun Semiconductors Ltd. Partial erase verify
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US20060218455A1 (en) * 2005-03-23 2006-09-28 Silicon Design Solution, Inc. Integrated circuit margin stress test system
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7786512B2 (en) 2005-07-18 2010-08-31 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7221138B2 (en) 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US7352627B2 (en) 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7638835B2 (en) 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7605579B2 (en) 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
JP2010079977A (ja) * 2008-09-25 2010-04-08 Toppan Printing Co Ltd 定電流型電源回路を有する不揮発性半導体メモリ装置
JP2011159355A (ja) * 2010-02-01 2011-08-18 Sanyo Electric Co Ltd 半導体記憶装置
US8345483B2 (en) * 2011-01-21 2013-01-01 Spansion Llc System and method for addressing threshold voltage shifts of memory cells in an electronic product
JP6496742B2 (ja) * 2014-02-11 2019-04-03 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ 薄膜電子回路をカスタマイズするための方法
GB2575508B (en) * 2018-07-13 2020-07-15 X Fab Semiconductor Foundries Gmbh Improvements in and relating to flash memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951072B2 (ja) * 1979-02-26 1984-12-12 日本電気株式会社 半導体メモリ装置
JPS56148792A (en) * 1980-04-21 1981-11-18 Nec Corp Testing method for margin voltage of memory cell
JPH0770222B2 (ja) * 1984-06-04 1995-07-31 株式会社日立製作所 Ｍｏｓスタテイツク型ｒａｍ
US4612630A (en) * 1984-07-27 1986-09-16 Harris Corporation EEPROM margin testing design
US4644196A (en) * 1985-01-28 1987-02-17 Motorola, Inc. Tri-state differential amplifier
US4780750A (en) * 1986-01-03 1988-10-25 Sierra Semiconductor Corporation Electrically alterable non-volatile memory device
US4809231A (en) * 1987-11-12 1989-02-28 Motorola, Inc. Method and apparatus for post-packaging testing of one-time programmable memories
US4903265A (en) * 1987-11-12 1990-02-20 Motorola, Inc. Method and apparatus for post-packaging testing of one-time programmable memories
US4841482A (en) * 1988-02-17 1989-06-20 Intel Corporation Leakage verification for flash EPROM

Also Published As

Publication number Publication date
IT1241661B (it) 1994-01-26
IT9019589A1 (it) 1991-09-07
US5142495A (en) 1992-08-25
JPH02254700A (ja) 1990-10-15

Similar Documents

Publication Publication Date Title
IT9019589A0 (it) Memoria a carico variabile di marginarura
IT215084Z2 (it) Cambra ad escursione variabile
DE68925171T2 (de) Planar-Induktivität
IT9047890A0 (it) Trimarano ad assetto variabile
DE69015121D1 (de) Kraftmessdose.
DE69213506D1 (de) Kraftaufnehmer
DE69003543D1 (de) Vorausbezahlte wiederaufladbare speicherkarte.
NO176737C (no) Innkapslet sammenpresset ammunisjon
IT8985009A0 (it) Dispositivo di telemetria ottico-elettronica a base variabile
IT1227581B (it) Macchina lavastoviglie con possibilita' di carico variabile
DE69026675T2 (de) MIS-Kapazitätselement
DK185088A (da) Skanner
IT1248305B (it) Formatore di vortici automatico a geometria variabile
FR2639038B1 (fr) Element support de charge modulaire
DE69314160T2 (de) Ladungsherstellung
ITTO910169A1 (it) Induttanza variabile
IT8968051A0 (it) Selezionatore di monete
IT9048184A0 (it) Schiera di memoria a semiconduttori
ITMI920764V0 (it) Struttura di portatratti doppio a posizionamento variabile
DE69210765T2 (de) Bleiakkumulator
IT216009Z2 (it) Valigia a geometria variabile
SE8901769D0 (sv) Fotborste m laada
ATA4890A (de) Lasteinleitungsvorrichtung
DE4090275T1 (de) Feststoff-lithium-akkumulator
IT9046872A0 (it) Motoscopa a larghezza variabile

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19980327