IT8522639A0 - Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione. - Google Patents

Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione.

Info

Publication number
IT8522639A0
IT8522639A0 IT8522639A IT2263985A IT8522639A0 IT 8522639 A0 IT8522639 A0 IT 8522639A0 IT 8522639 A IT8522639 A IT 8522639A IT 2263985 A IT2263985 A IT 2263985A IT 8522639 A0 IT8522639 A0 IT 8522639A0
Authority
IT
Italy
Prior art keywords
procedure
manufacture
protection
electronic device
integrated circuits
Prior art date
Application number
IT8522639A
Other languages
English (en)
Other versions
IT1186338B (it
Inventor
Franco Bertotti
Paolo Ferrari
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT22639/85A priority Critical patent/IT1186338B/it
Publication of IT8522639A0 publication Critical patent/IT8522639A0/it
Priority to DE19863635523 priority patent/DE3635523A1/de
Priority to US06/921,071 priority patent/US4829344A/en
Priority to GB8625068A priority patent/GB2182490B/en
Priority to FR868614921A priority patent/FR2589279B1/fr
Priority to NL8602705A priority patent/NL8602705A/nl
Priority to JP61258102A priority patent/JPS62104156A/ja
Application granted granted Critical
Publication of IT1186338B publication Critical patent/IT1186338B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
IT22639/85A 1985-10-29 1985-10-29 Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione IT1186338B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT22639/85A IT1186338B (it) 1985-10-29 1985-10-29 Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
DE19863635523 DE3635523A1 (de) 1985-10-29 1986-10-18 Elektronische halbleiteranordnung zum schutz von integrierten schaltungen sowie verfahren zu deren herstellung
US06/921,071 US4829344A (en) 1985-10-29 1986-10-20 Electronic semiconductor device for protecting integrated circuits against electrostatic discharges
GB8625068A GB2182490B (en) 1985-10-29 1986-10-20 Electronic semiconductor device for protecting integrated circuits against electrostatic discharges and process for the production thereof
FR868614921A FR2589279B1 (fr) 1985-10-29 1986-10-27 Dispositif semi-conducteur electronique pour proteger des circuits integres contre des decharges electrostatiques et procede pour le fabriquer
NL8602705A NL8602705A (nl) 1985-10-29 1986-10-28 Elektronische halfgeleiderinrichting ter bescherming van geintegreerde schakelingen tegen elektrostatische ontladingen, en werkwijze voor de vervaardiging ervan.
JP61258102A JPS62104156A (ja) 1985-10-29 1986-10-28 電子半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22639/85A IT1186338B (it) 1985-10-29 1985-10-29 Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione

Publications (2)

Publication Number Publication Date
IT8522639A0 true IT8522639A0 (it) 1985-10-29
IT1186338B IT1186338B (it) 1987-11-26

Family

ID=11198725

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22639/85A IT1186338B (it) 1985-10-29 1985-10-29 Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione

Country Status (7)

Country Link
US (1) US4829344A (it)
JP (1) JPS62104156A (it)
DE (1) DE3635523A1 (it)
FR (1) FR2589279B1 (it)
GB (1) GB2182490B (it)
IT (1) IT1186338B (it)
NL (1) NL8602705A (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61218143A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体集積回路装置
IT1188398B (it) * 1986-02-18 1988-01-07 Sgs Microelettronica Spa Struttura integrata di protezione da scariche elettrostatische e dispositivo a semiconduttore incorporante la stessa
US4750081A (en) * 1987-10-19 1988-06-07 Unisys Corporation Phantom ESD protection circuit employing E-field crowding
US5172290A (en) * 1988-08-10 1992-12-15 Siemens Aktiengesellschaft Gate-source protective circuit for a power mosfet
JPH02234463A (ja) * 1989-01-20 1990-09-17 Siemens Ag Ｅｓｄ保護構造
US5182223A (en) * 1990-12-19 1993-01-26 Texas Instruments Incorporated Method of making an integrated circuit with capacitor
DE4200884A1 (de) * 1991-01-16 1992-07-23 Micron Technology Inc Integrierte halbleiterschaltungsvorrichtung
IT1253683B (it) * 1991-09-12 1995-08-22 Sgs Thomson Microelectronics Dispositivo a bassa corrente di perdita per la protezione di un circuito integrato da scariche elettrostatiche.
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
TW367603B (en) * 1998-06-20 1999-08-21 United Microelectronics Corp Electrostatic discharge protection circuit for SRAM
US20060268479A1 (en) * 2005-05-31 2006-11-30 Atmel Germany Gmbh ESD protection structure
US8810004B2 (en) 2009-11-26 2014-08-19 Nxp, B.V. Methods, systems and devices for electrostatic discharge protection
KR101923763B1 (ko) * 2015-03-13 2018-11-30 매그나칩 반도체 유한회사 레벨 쉬프트 회로 보호용 정전기 방전 보호 회로 및 소자

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
DE1046783B (de) * 1956-07-13 1958-12-18 Siemens Ag Halbleiteranordnung mit einem schwach dotierten Halbleiterkoerper und einem grossflaechigen p-n-UEbergang
NL275029A (it) * 1961-05-16 1900-01-01
US3268739A (en) * 1963-06-20 1966-08-23 Dickson Electronics Corp Semiconductor voltage reference system having substantially zero temperature coefficient
US3263092A (en) * 1963-09-12 1966-07-26 Dickson Electronics Corp Low impedance voltage regulating circuit
CH427042A (de) * 1963-09-25 1966-12-31 Licentia Gmbh Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor
GB1285272A (en) * 1970-04-01 1972-08-16 Hallite Holdings Ltd Gland seal assemblies
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
JPS53101987A (en) * 1977-02-16 1978-09-05 Sanyo Electric Co Ltd Transistor incorporated into monolithic integrated circuit
JPS5946566B2 (ja) * 1977-07-05 1984-11-13 旭化成株式会社 ミミズ養殖槽
JPS55102268A (en) * 1979-01-31 1980-08-05 Toshiba Corp Protecting circuit for semiconductor device
US4264941A (en) * 1979-02-14 1981-04-28 National Semiconductor Corporation Protective circuit for insulated gate field effect transistor integrated circuits
US4476476A (en) * 1979-04-05 1984-10-09 National Semiconductor Corporation CMOS Input and output protection circuit
JPS5756960A (en) * 1980-09-22 1982-04-05 Hitachi Ltd Semiconductor integrated circuit device
US4405933A (en) * 1981-02-04 1983-09-20 Rca Corporation Protective integrated circuit device utilizing back-to-back zener diodes
JPS58161378A (ja) * 1982-03-18 1983-09-24 Toshiba Corp 定電圧ダイオ−ド
US4607274A (en) * 1982-10-15 1986-08-19 Nec Corporation Complementary MOS field effect transistor integrated circuit with protection function
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure

Also Published As

Publication number Publication date
GB2182490A (en) 1987-05-13
IT1186338B (it) 1987-11-26
FR2589279B1 (fr) 1991-06-07
JPS62104156A (ja) 1987-05-14
GB2182490B (en) 1989-10-11
US4829344A (en) 1989-05-09
DE3635523A1 (de) 1987-04-30
NL8602705A (nl) 1987-05-18
GB8625068D0 (en) 1986-11-26
FR2589279A1 (fr) 1987-04-30

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030