KR880700465A - 정전방전 입력 보호회로 - Google Patents

정전방전 입력 보호회로

Info

Publication number
KR880700465A
KR880700465A KR860700875A KR860700875A KR880700465A KR 880700465 A KR880700465 A KR 880700465A KR 860700875 A KR860700875 A KR 860700875A KR 860700875 A KR860700875 A KR 860700875A KR 880700465 A KR880700465 A KR 880700465A
Authority
KR
South Korea
Prior art keywords
protection circuit
electrostatic discharge
input protection
discharge input
electrostatic
Prior art date
Application number
KR860700875A
Other languages
English (en)
Other versions
KR910009931B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR880700465A publication Critical patent/KR880700465A/ko
Application granted granted Critical
Publication of KR910009931B1 publication Critical patent/KR910009931B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019860700875A 1985-04-08 1986-04-07 정전 방전 입력 보호회로 KR910009931B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72086285A 1985-04-08 1985-04-08
US720,862 1985-04-08
PCT/US1986/000697 WO1986006213A1 (en) 1985-04-08 1986-04-07 Electrostatic discharge input protection network

Publications (2)

Publication Number Publication Date
KR880700465A true KR880700465A (ko) 1988-03-15
KR910009931B1 KR910009931B1 (ko) 1991-12-05

Family

ID=24895559

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860700875A KR910009931B1 (ko) 1985-04-08 1986-04-07 정전 방전 입력 보호회로

Country Status (7)

Country Link
US (1) US4724471A (ko)
EP (1) EP0218685B1 (ko)
JP (1) JPH0732237B2 (ko)
KR (1) KR910009931B1 (ko)
BR (1) BR8606541A (ko)
DE (2) DE3688034T2 (ko)
WO (1) WO1986006213A1 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3714647C2 (de) * 1987-05-02 1993-10-07 Telefunken Microelectron Integrierte Schaltungsanordnung
US4750081A (en) * 1987-10-19 1988-06-07 Unisys Corporation Phantom ESD protection circuit employing E-field crowding
US4882610A (en) * 1987-10-29 1989-11-21 Deutsche Itt Industries Gmbh Protective arrangement for MOS circuits
EP0313722B1 (de) * 1987-10-29 1993-08-04 Deutsche ITT Industries GmbH Schutzanordnung für MOS-Schaltungen
WO1989007334A1 (en) * 1988-02-02 1989-08-10 Analog Devices, Inc. Ic with means for reducing esd damage
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
US4959708A (en) * 1988-08-26 1990-09-25 Delco Electronics Corporation MOS integrated circuit with vertical shield
US5210596A (en) * 1989-06-30 1993-05-11 Texas Instruments Incorporated Thermally optimized interdigitated transistor
US5477078A (en) * 1994-02-18 1995-12-19 Analog Devices, Incorporated Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage
KR100206870B1 (ko) * 1995-11-28 1999-07-01 구본준 정전 방전 및 래치 업 방지회로
US5773346A (en) * 1995-12-06 1998-06-30 Micron Technology, Inc. Semiconductor processing method of forming a buried contact
US5705841A (en) * 1995-12-22 1998-01-06 Winbond Electronics Corporation Electrostatic discharge protection device for integrated circuits and its method for fabrication
US6777784B1 (en) * 2000-10-17 2004-08-17 National Semiconductor Corporation Bipolar transistor-based electrostatic discharge (ESD) protection structure with a heat sink
US6976238B1 (en) * 2001-06-03 2005-12-13 Cadence Design Systems, Inc. Circular vias and interconnect-line ends
US6801416B2 (en) * 2001-08-23 2004-10-05 Institute Of Microelectronics ESD protection system for high frequency applications
JP3753692B2 (ja) * 2002-12-20 2006-03-08 ローム株式会社 オープンドレイン用ｍｏｓｆｅｔ及びこれを用いた半導体集積回路装置
US6927458B2 (en) * 2003-08-08 2005-08-09 Conexant Systems, Inc. Ballasting MOSFETs using staggered and segmented diffusion regions
KR20100135521A (ko) * 2009-06-17 2010-12-27 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335340A (en) * 1964-02-24 1967-08-08 Ibm Combined transistor and testing structures and fabrication thereof
US3609470A (en) * 1968-02-19 1971-09-28 Ibm Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum
US3740835A (en) * 1970-08-31 1973-06-26 Fairchild Camera Instr Co Method of forming semiconductor device contacts
US3777216A (en) * 1972-10-02 1973-12-04 Motorola Inc Avalanche injection input protection circuit
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device
JPS583285A (ja) * 1981-06-30 1983-01-10 Fujitsu Ltd 半導体集積回路の保護装置
JPS5994865A (ja) * 1982-11-24 1984-05-31 Toshiba Corp 半導体装置
JPH0618251B2 (ja) * 1983-02-23 1994-03-09 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JPS62502504A (ja) 1987-09-24
DE218685T1 (de) 1988-05-19
DE3688034T2 (de) 1993-06-24
BR8606541A (pt) 1987-08-04
US4724471A (en) 1988-02-09
EP0218685A1 (en) 1987-04-22
WO1986006213A1 (en) 1986-10-23
JPH0732237B2 (ja) 1995-04-10
EP0218685B1 (en) 1993-03-17
EP0218685A4 (en) 1988-12-22
DE3688034D1 (de) 1993-04-22
KR910009931B1 (ko) 1991-12-05

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Legal Events

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A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
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Payment date: 19971127

Year of fee payment: 7

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