FR2589279B1 - Dispositif semi-conducteur electronique pour proteger des circuits integres contre des decharges electrostatiques et procede pour le fabriquer - Google Patents

Dispositif semi-conducteur electronique pour proteger des circuits integres contre des decharges electrostatiques et procede pour le fabriquer

Info

Publication number
FR2589279B1
FR2589279B1 FR868614921A FR8614921A FR2589279B1 FR 2589279 B1 FR2589279 B1 FR 2589279B1 FR 868614921 A FR868614921 A FR 868614921A FR 8614921 A FR8614921 A FR 8614921A FR 2589279 B1 FR2589279 B1 FR 2589279B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
same
integrated circuits
electronic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR868614921A
Other languages
English (en)
Other versions
FR2589279A1 (fr
Inventor
Franco Bertotti
Paolo Ferrari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of FR2589279A1 publication Critical patent/FR2589279A1/fr
Application granted granted Critical
Publication of FR2589279B1 publication Critical patent/FR2589279B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
FR868614921A 1985-10-29 1986-10-27 Dispositif semi-conducteur electronique pour proteger des circuits integres contre des decharges electrostatiques et procede pour le fabriquer Expired - Lifetime FR2589279B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22639/85A IT1186338B (it) 1985-10-29 1985-10-29 Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione

Publications (2)

Publication Number Publication Date
FR2589279A1 FR2589279A1 (fr) 1987-04-30
FR2589279B1 true FR2589279B1 (fr) 1991-06-07

Family

ID=11198725

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868614921A Expired - Lifetime FR2589279B1 (fr) 1985-10-29 1986-10-27 Dispositif semi-conducteur electronique pour proteger des circuits integres contre des decharges electrostatiques et procede pour le fabriquer

Country Status (7)

Country Link
US (1) US4829344A (fr)
JP (1) JPS62104156A (fr)
DE (1) DE3635523A1 (fr)
FR (1) FR2589279B1 (fr)
GB (1) GB2182490B (fr)
IT (1) IT1186338B (fr)
NL (1) NL8602705A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61218143A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体集積回路装置
IT1188398B (it) * 1986-02-18 1988-01-07 Sgs Microelettronica Spa Struttura integrata di protezione da scariche elettrostatische e dispositivo a semiconduttore incorporante la stessa
US4750081A (en) * 1987-10-19 1988-06-07 Unisys Corporation Phantom ESD protection circuit employing E-field crowding
US5172290A (en) * 1988-08-10 1992-12-15 Siemens Aktiengesellschaft Gate-source protective circuit for a power mosfet
JPH02234463A (ja) * 1989-01-20 1990-09-17 Siemens Ag Ｅｓｄ保護構造
US5182223A (en) * 1990-12-19 1993-01-26 Texas Instruments Incorporated Method of making an integrated circuit with capacitor
DE4200884A1 (de) * 1991-01-16 1992-07-23 Micron Technology Inc Integrierte halbleiterschaltungsvorrichtung
IT1253683B (it) * 1991-09-12 1995-08-22 Sgs Thomson Microelectronics Dispositivo a bassa corrente di perdita per la protezione di un circuito integrato da scariche elettrostatiche.
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
TW367603B (en) * 1998-06-20 1999-08-21 United Microelectronics Corp Electrostatic discharge protection circuit for SRAM
US20060268479A1 (en) * 2005-05-31 2006-11-30 Atmel Germany Gmbh ESD protection structure
WO2011064618A1 (fr) 2009-11-26 2011-06-03 Nxp B.V. Méthodes, systèmes et dispositifs pour la protection contre les décharges électrostatiques
KR101923763B1 (ko) * 2015-03-13 2018-11-30 매그나칩 반도체 유한회사 레벨 쉬프트 회로 보호용 정전기 방전 보호 회로 및 소자

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
DE1046783B (de) * 1956-07-13 1958-12-18 Siemens Ag Halbleiteranordnung mit einem schwach dotierten Halbleiterkoerper und einem grossflaechigen p-n-UEbergang
NL125293C (fr) * 1961-05-16 1900-01-01
US3268739A (en) * 1963-06-20 1966-08-23 Dickson Electronics Corp Semiconductor voltage reference system having substantially zero temperature coefficient
US3263092A (en) * 1963-09-12 1966-07-26 Dickson Electronics Corp Low impedance voltage regulating circuit
CH427042A (de) * 1963-09-25 1966-12-31 Licentia Gmbh Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor
GB1285272A (en) * 1970-04-01 1972-08-16 Hallite Holdings Ltd Gland seal assemblies
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
JPS53101987A (en) * 1977-02-16 1978-09-05 Sanyo Electric Co Ltd Transistor incorporated into monolithic integrated circuit
JPS5946566B2 (ja) * 1977-07-05 1984-11-13 旭化成株式会社 ミミズ養殖槽
JPS55102268A (en) * 1979-01-31 1980-08-05 Toshiba Corp Protecting circuit for semiconductor device
US4264941A (en) * 1979-02-14 1981-04-28 National Semiconductor Corporation Protective circuit for insulated gate field effect transistor integrated circuits
US4476476A (en) * 1979-04-05 1984-10-09 National Semiconductor Corporation CMOS Input and output protection circuit
JPS5756960A (en) * 1980-09-22 1982-04-05 Hitachi Ltd Semiconductor integrated circuit device
US4405933A (en) * 1981-02-04 1983-09-20 Rca Corporation Protective integrated circuit device utilizing back-to-back zener diodes
JPS58161378A (ja) * 1982-03-18 1983-09-24 Toshiba Corp 定電圧ダイオ−ド
US4607274A (en) * 1982-10-15 1986-08-19 Nec Corporation Complementary MOS field effect transistor integrated circuit with protection function
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure

Also Published As

Publication number Publication date
DE3635523A1 (de) 1987-04-30
GB8625068D0 (en) 1986-11-26
FR2589279A1 (fr) 1987-04-30
GB2182490B (en) 1989-10-11
NL8602705A (nl) 1987-05-18
US4829344A (en) 1989-05-09
GB2182490A (en) 1987-05-13
IT1186338B (it) 1987-11-26
IT8522639A0 (it) 1985-10-29
JPS62104156A (ja) 1987-05-14

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Legal Events

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D6 Patent endorsed licences of rights
ST Notification of lapse