IT1250098B - Circuito di regolazione dell'assorbimento per memorie statiche del tipo ram. - Google Patents

Circuito di regolazione dell'assorbimento per memorie statiche del tipo ram.

Info

Publication number
IT1250098B
IT1250098B ITRM910698A ITRM910698A IT1250098B IT 1250098 B IT1250098 B IT 1250098B IT RM910698 A ITRM910698 A IT RM910698A IT RM910698 A ITRM910698 A IT RM910698A IT 1250098 B IT1250098 B IT 1250098B
Authority
IT
Italy
Prior art keywords
voltage
ram
unit
regulation circuit
current
Prior art date
Application number
ITRM910698A
Other languages
English (en)
Italian (it)
Inventor
Su-Chul Lee
Chung-Geun Kwak
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITRM910698A0 publication Critical patent/ITRM910698A0/it
Publication of ITRM910698A1 publication Critical patent/ITRM910698A1/it
Application granted granted Critical
Publication of IT1250098B publication Critical patent/IT1250098B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
ITRM910698A 1990-09-19 1991-09-18 Circuito di regolazione dell'assorbimento per memorie statiche del tipo ram. IT1250098B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900014828A KR920006985A (ko) 1990-09-19 1990-09-19 스테이틱램의 부하 조절회로

Publications (3)

Publication Number Publication Date
ITRM910698A0 ITRM910698A0 (it) 1991-09-18
ITRM910698A1 ITRM910698A1 (it) 1993-03-18
IT1250098B true IT1250098B (it) 1995-03-30

Family

ID=19303774

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM910698A IT1250098B (it) 1990-09-19 1991-09-18 Circuito di regolazione dell'assorbimento per memorie statiche del tipo ram.

Country Status (6)

Country Link
JP (1) JPH04132080A (ja)
KR (1) KR920006985A (ja)
DE (1) DE4037207A1 (ja)
FR (1) FR2666913B1 (ja)
GB (1) GB2248131A (ja)
IT (1) IT1250098B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001143476A (ja) 1999-11-15 2001-05-25 Mitsubishi Electric Corp スタティック型半導体記憶装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828679B2 (ja) * 1979-04-25 1983-06-17 富士通株式会社 半導体記憶装置の書込み回路
DE3004565C2 (de) * 1980-02-07 1984-06-14 Siemens AG, 1000 Berlin und 8000 München Integrierte digitale Halbleiterschaltung
JPS57162181A (en) * 1981-03-31 1982-10-05 Fujitsu Ltd Semiconductor memory device
JPS58161195A (ja) * 1982-03-19 1983-09-24 Fujitsu Ltd スタテイツク型半導体記憶装置
JPS5922295A (ja) * 1982-06-30 1984-02-04 Fujitsu Ltd 半導体記憶装置
US4758994A (en) * 1986-01-17 1988-07-19 Texas Instruments Incorporated On chip voltage regulator for common collector matrix programmable memory array
US4857772A (en) * 1987-04-27 1989-08-15 Fairchild Semiconductor Corporation BIPMOS decoder circuit
US4874967A (en) * 1987-12-15 1989-10-17 Xicor, Inc. Low power voltage clamp circuit
KR910004736B1 (ko) * 1988-12-15 1991-07-10 삼성전자 주식회사 스테이틱 메모리장치의 전원전압 조절회로
JPH02177084A (ja) * 1988-12-27 1990-07-10 Mitsubishi Electric Corp 半導体集積回路

Also Published As

Publication number Publication date
FR2666913B1 (fr) 1993-12-10
KR920006985A (ko) 1992-04-28
ITRM910698A0 (it) 1991-09-18
GB9111468D0 (en) 1991-07-17
GB2248131A (en) 1992-03-25
FR2666913A1 (fr) 1992-03-20
ITRM910698A1 (it) 1993-03-18
JPH04132080A (ja) 1992-05-06
DE4037207A1 (de) 1992-04-02
DE4037207C2 (ja) 1993-08-19

Similar Documents

Publication Publication Date Title
KR920001524A (ko) Cmos 집적회로장치
DE69732699D1 (de) Linearer Spannungsregler mit geringem Verbrauch und hoher Versorgungsspannungsunterdrückung
ATE105117T1 (de) Supraleitender spannungsstabilisator.
EP0083031A3 (en) Semiconductor memory device having a programming circuit
DE69623814D1 (de) Aktiver gleichrichter mit minimalen energieverlusten
KR870005393A (ko) 반도체 메모리
TW374930B (en) A RAM device having a self-refresh mode
DE3677557D1 (de) Ueberwachungsschaltung fuer die stromversorgung von halbleiterbausteinen.
CA2219343A1 (en) A high voltage converter circuit
DE69132533D1 (de) Halbleiterspeichergerät mit redundanter Schaltung
KR870009385A (ko) 반도체 집적회로 장치
IT1250098B (it) Circuito di regolazione dell'assorbimento per memorie statiche del tipo ram.
DE59706533D1 (de) Einzelelektron-Speicherzellenanordnung
ES8404530A1 (es) Procedimiento y circuito para estabilizar la salida de una fuente de alimentacion ferroresonante.
TW430805B (en) Semiconductor memory device having a voltage converting circuit
KR100353544B1 (en) Circuit for generating internal supply voltage of semiconductor memory device
DE3672794D1 (de) Transformatorloses netzgeraet.
IT1258821B (it) Circuito per generare tensione di alimentazione interna in un dispositivo di memoria a semiconduttore
ATE211554T1 (de) Extern gespeiste anordnung mit einer elektronischen anzeige und/oder einer kommunikations-schnittstelle
KR970071781A (ko) 반도체 메모리 장치 및 그 전원인가방법
GB2013377A (en) Voltage regulator
CA2236336A1 (en) Regulated dram cell plate and precharge voltage generator
KR890008839A (ko) 집적 메모리 회로
JPS5589984A (en) Static memory cell
RU2025892C1 (ru) Эмиттерный повторитель

Legal Events

Date Code Title Description
0001 Granted