ITRM910698A1 - Circuito di regolazione dell'assorbimento per memorie statiche del tipo ram. - Google Patents

Circuito di regolazione dell'assorbimento per memorie statiche del tipo ram.

Info

Publication number
ITRM910698A1
ITRM910698A1 IT000698A ITRM910698A ITRM910698A1 IT RM910698 A1 ITRM910698 A1 IT RM910698A1 IT 000698 A IT000698 A IT 000698A IT RM910698 A ITRM910698 A IT RM910698A IT RM910698 A1 ITRM910698 A1 IT RM910698A1
Authority
IT
Italy
Prior art keywords
regulation circuit
ram type
static memories
absorption regulation
absorption
Prior art date
Application number
IT000698A
Other languages
English (en)
Inventor
Chung-Geun Kwak
Su-Chul Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITRM910698A0 publication Critical patent/ITRM910698A0/it
Publication of ITRM910698A1 publication Critical patent/ITRM910698A1/it
Application granted granted Critical
Publication of IT1250098B publication Critical patent/IT1250098B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
ITRM910698A 1990-09-19 1991-09-18 Circuito di regolazione dell'assorbimento per memorie statiche del tipo ram. IT1250098B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900014828A KR920006985A (ko) 1990-09-19 1990-09-19 스테이틱램의 부하 조절회로

Publications (3)

Publication Number Publication Date
ITRM910698A0 ITRM910698A0 (it) 1991-09-18
ITRM910698A1 true ITRM910698A1 (it) 1993-03-18
IT1250098B IT1250098B (it) 1995-03-30

Family

ID=19303774

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM910698A IT1250098B (it) 1990-09-19 1991-09-18 Circuito di regolazione dell'assorbimento per memorie statiche del tipo ram.

Country Status (6)

Country Link
JP (1) JPH04132080A (it)
KR (1) KR920006985A (it)
DE (1) DE4037207A1 (it)
FR (1) FR2666913B1 (it)
GB (1) GB2248131A (it)
IT (1) IT1250098B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001143476A (ja) 1999-11-15 2001-05-25 Mitsubishi Electric Corp スタティック型半導体記憶装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828679B2 (ja) * 1979-04-25 1983-06-17 富士通株式会社 半導体記憶装置の書込み回路
DE3004565C2 (de) * 1980-02-07 1984-06-14 Siemens AG, 1000 Berlin und 8000 München Integrierte digitale Halbleiterschaltung
JPS57162181A (en) * 1981-03-31 1982-10-05 Fujitsu Ltd Semiconductor memory device
JPS58161195A (ja) * 1982-03-19 1983-09-24 Fujitsu Ltd スタテイツク型半導体記憶装置
JPS5922295A (ja) * 1982-06-30 1984-02-04 Fujitsu Ltd 半導体記憶装置
US4758994A (en) * 1986-01-17 1988-07-19 Texas Instruments Incorporated On chip voltage regulator for common collector matrix programmable memory array
US4857772A (en) * 1987-04-27 1989-08-15 Fairchild Semiconductor Corporation BIPMOS decoder circuit
US4874967A (en) * 1987-12-15 1989-10-17 Xicor, Inc. Low power voltage clamp circuit
KR910004736B1 (ko) * 1988-12-15 1991-07-10 삼성전자 주식회사 스테이틱 메모리장치의 전원전압 조절회로
JPH02177084A (ja) * 1988-12-27 1990-07-10 Mitsubishi Electric Corp 半導体集積回路

Also Published As

Publication number Publication date
GB2248131A (en) 1992-03-25
DE4037207A1 (de) 1992-04-02
FR2666913B1 (fr) 1993-12-10
DE4037207C2 (it) 1993-08-19
GB9111468D0 (en) 1991-07-17
FR2666913A1 (fr) 1992-03-20
KR920006985A (ko) 1992-04-28
ITRM910698A0 (it) 1991-09-18
IT1250098B (it) 1995-03-30
JPH04132080A (ja) 1992-05-06

Similar Documents

Publication Publication Date Title
FI932831A0 (fi) Ett foerfarande foer framstaellning av en syntetisk ledarsekvens
ES509706A0 (es) "mejoras introducidas en el objeto de la patente principal n 504.302".
FI822630L (fi) Kompositioner
FI823883L (fi) Kompositioner
ES268041Y (es) "espejo retrovisor exterior".
IT1074856B (it) Triazapentadieni dotati di proprieta' acaricide
ITRM910698A1 (it) Circuito di regolazione dell'assorbimento per memorie statiche del tipo ram.
DE69101956T2 (de) Thioaminal-Stabilisatoren.
ES512351A0 (es) "perfeccionamiento en los manuares de estiraje".
NO912335D0 (no) Adaptiv tunnelforsyning.
IT8123036A0 (it) Perfezionamenti apportati alle guarnizioni di protezione degli zoccoli del cavallo.
IT1233243B (it) Derivati dell'isochinolina.
IT1148012B (it) Derivati isossazolici di composti tipo 9alfa 11alfa-epossi-immino-9,11,15-trideossi-pgf
BR6101807U (pt) Alastrado flexivel multiforme
IT1142016B (it) Derivato del 2,4-diossacicloesanone
IT1189320B (it) 1-fenil-1,2,3-triazoli impiegabili come disappetenti
RO81423A2 (ro) Generator de ozon
IT8222840V0 (it) Montatura per occhiali del tipo cosiddetto "a giorno".
IT8921095A0 (it) Composizione per l'aumento del guadagno di peso.
IT232234Y1 (it) Piombo per pesca, in particolare pesca del tipo "surf-casting".
ES508061A0 (es) "perfeccionamientos introducidos en los movimientos de munecos".
ES268105Y (es) "estanteria regulable".
TR21560A (tr) Etilsulfonilmetil-i,3 ogzazolidin herbisid antidot
IT8141536A0 (it) Procedimento per l'ottenimento del solfuro di sodio.
FI903903A0 (fi) Extremitetrehabiliteringsanordning nr 2.

Legal Events

Date Code Title Description
0001 Granted