FR2666913B1 - Circuit de regulation de courant dans une ram statique. - Google Patents
Circuit de regulation de courant dans une ram statique.Info
- Publication number
- FR2666913B1 FR2666913B1 FR9014733A FR9014733A FR2666913B1 FR 2666913 B1 FR2666913 B1 FR 2666913B1 FR 9014733 A FR9014733 A FR 9014733A FR 9014733 A FR9014733 A FR 9014733A FR 2666913 B1 FR2666913 B1 FR 2666913B1
- Authority
- FR
- France
- Prior art keywords
- static ram
- regulation circuit
- current regulation
- current
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900014828A KR920006985A (ko) | 1990-09-19 | 1990-09-19 | 스테이틱램의 부하 조절회로 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2666913A1 FR2666913A1 (fr) | 1992-03-20 |
| FR2666913B1 true FR2666913B1 (fr) | 1993-12-10 |
Family
ID=19303774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9014733A Expired - Fee Related FR2666913B1 (fr) | 1990-09-19 | 1990-11-26 | Circuit de regulation de courant dans une ram statique. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH04132080A (it) |
| KR (1) | KR920006985A (it) |
| DE (1) | DE4037207A1 (it) |
| FR (1) | FR2666913B1 (it) |
| GB (1) | GB2248131A (it) |
| IT (1) | IT1250098B (it) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001143476A (ja) | 1999-11-15 | 2001-05-25 | Mitsubishi Electric Corp | スタティック型半導体記憶装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5828679B2 (ja) * | 1979-04-25 | 1983-06-17 | 富士通株式会社 | 半導体記憶装置の書込み回路 |
| DE3004565C2 (de) * | 1980-02-07 | 1984-06-14 | Siemens AG, 1000 Berlin und 8000 München | Integrierte digitale Halbleiterschaltung |
| JPS57162181A (en) * | 1981-03-31 | 1982-10-05 | Fujitsu Ltd | Semiconductor memory device |
| JPS58161195A (ja) * | 1982-03-19 | 1983-09-24 | Fujitsu Ltd | スタテイツク型半導体記憶装置 |
| JPS5922295A (ja) * | 1982-06-30 | 1984-02-04 | Fujitsu Ltd | 半導体記憶装置 |
| US4758994A (en) * | 1986-01-17 | 1988-07-19 | Texas Instruments Incorporated | On chip voltage regulator for common collector matrix programmable memory array |
| US4857772A (en) * | 1987-04-27 | 1989-08-15 | Fairchild Semiconductor Corporation | BIPMOS decoder circuit |
| US4874967A (en) * | 1987-12-15 | 1989-10-17 | Xicor, Inc. | Low power voltage clamp circuit |
| KR910004736B1 (ko) * | 1988-12-15 | 1991-07-10 | 삼성전자 주식회사 | 스테이틱 메모리장치의 전원전압 조절회로 |
| JPH02177084A (ja) * | 1988-12-27 | 1990-07-10 | Mitsubishi Electric Corp | 半導体集積回路 |
-
1990
- 1990-09-19 KR KR1019900014828A patent/KR920006985A/ko not_active IP Right Cessation
- 1990-11-22 DE DE4037207A patent/DE4037207A1/de active Granted
- 1990-11-26 FR FR9014733A patent/FR2666913B1/fr not_active Expired - Fee Related
- 1990-11-28 JP JP2323353A patent/JPH04132080A/ja active Pending
-
1991
- 1991-05-28 GB GB9111468A patent/GB2248131A/en not_active Withdrawn
- 1991-09-18 IT ITRM910698A patent/IT1250098B/it active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| GB2248131A (en) | 1992-03-25 |
| GB9111468D0 (en) | 1991-07-17 |
| FR2666913A1 (fr) | 1992-03-20 |
| KR920006985A (ko) | 1992-04-28 |
| DE4037207A1 (de) | 1992-04-02 |
| IT1250098B (it) | 1995-03-30 |
| ITRM910698A0 (it) | 1991-09-18 |
| JPH04132080A (ja) | 1992-05-06 |
| DE4037207C2 (it) | 1993-08-19 |
| ITRM910698A1 (it) | 1993-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20090731 |