IT1241551B - Procedimento per la lucidatura chimica meccanica bilaterale di fette di semiconduttori, nonche' dispositivo per la sua esecuzione, e fette di semiconduttori ottenibili con questo. - Google Patents
Procedimento per la lucidatura chimica meccanica bilaterale di fette di semiconduttori, nonche' dispositivo per la sua esecuzione, e fette di semiconduttori ottenibili con questo.Info
- Publication number
- IT1241551B IT1241551B IT48246A IT4824690A IT1241551B IT 1241551 B IT1241551 B IT 1241551B IT 48246 A IT48246 A IT 48246A IT 4824690 A IT4824690 A IT 4824690A IT 1241551 B IT1241551 B IT 1241551B
- Authority
- IT
- Italy
- Prior art keywords
- slices
- semiconductors
- execution
- procedure
- well
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3929484A DE3929484A1 (de) | 1989-09-05 | 1989-09-05 | Verfahren zum zweiseitigen chemomechanischen polieren von halbleiterscheiben, sowie vorrichtung zu seiner durchfuehrung und dadurch erhaeltliche halbleiterscheiben |
Publications (3)
Publication Number | Publication Date |
---|---|
IT9048246A0 IT9048246A0 (it) | 1990-09-03 |
IT9048246A1 IT9048246A1 (it) | 1992-03-03 |
IT1241551B true IT1241551B (it) | 1994-01-17 |
Family
ID=6388678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT48246A IT1241551B (it) | 1989-09-05 | 1990-09-03 | Procedimento per la lucidatura chimica meccanica bilaterale di fette di semiconduttori, nonche' dispositivo per la sua esecuzione, e fette di semiconduttori ottenibili con questo. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5110428A (it) |
JP (1) | JPH0397226A (it) |
DE (1) | DE3929484A1 (it) |
IT (1) | IT1241551B (it) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5366924A (en) * | 1992-03-16 | 1994-11-22 | At&T Bell Laboratories | Method of manufacturing an integrated circuit including planarizing a wafer |
GB2275130B (en) * | 1992-05-26 | 1997-01-08 | Toshiba Kk | Polishing apparatus and method for planarizing layer on a semiconductor wafer |
US5445996A (en) * | 1992-05-26 | 1995-08-29 | Kabushiki Kaisha Toshiba | Method for planarizing a semiconductor device having a amorphous layer |
US5422316A (en) * | 1994-03-18 | 1995-06-06 | Memc Electronic Materials, Inc. | Semiconductor wafer polisher and method |
US5733175A (en) | 1994-04-25 | 1998-03-31 | Leach; Michael A. | Polishing a workpiece using equal velocity at all points overlapping a polisher |
US5607341A (en) | 1994-08-08 | 1997-03-04 | Leach; Michael A. | Method and structure for polishing a wafer during manufacture of integrated circuits |
EP0880598A4 (en) * | 1996-01-23 | 2005-02-23 | Affymetrix Inc | RAPID EVALUATION OF NUCLEIC ACID ABUNDANCE DIFFERENCE, WITH A HIGH-DENSITY OLIGONUCLEOTIDE SYSTEM |
US5911864A (en) * | 1996-11-08 | 1999-06-15 | Northrop Grumman Corporation | Method of fabricating a semiconductor structure |
KR100304254B1 (ko) * | 1998-12-08 | 2002-03-21 | 윤종용 | 모듈외관검사설비 |
US6214704B1 (en) | 1998-12-16 | 2001-04-10 | Memc Electronic Materials, Inc. | Method of processing semiconductor wafers to build in back surface damage |
DE10196115B4 (de) * | 2000-04-24 | 2011-06-16 | Sumitomo Mitsubishi Silicon Corp. | Verfahren zum Polieren eines Halbleiterwafers |
JP3791302B2 (ja) | 2000-05-31 | 2006-06-28 | 株式会社Sumco | 両面研磨装置を用いた半導体ウェーハの研磨方法 |
JP2004506314A (ja) * | 2000-08-07 | 2004-02-26 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 両面研磨法を用いて半導体ウェーハを処理する方法 |
US6709981B2 (en) | 2000-08-16 | 2004-03-23 | Memc Electronic Materials, Inc. | Method and apparatus for processing a semiconductor wafer using novel final polishing method |
JP5301802B2 (ja) * | 2007-09-25 | 2013-09-25 | Sumco Techxiv株式会社 | 半導体ウェハの製造方法 |
DE102009015878A1 (de) * | 2009-04-01 | 2010-10-07 | Peter Wolters Gmbh | Verfahren zum materialabtragenden Bearbeiten von flachen Werkstücken |
JP5347807B2 (ja) * | 2009-07-30 | 2013-11-20 | 新日鐵住金株式会社 | 半導体基板の研磨方法及び研磨装置 |
CN102241077B (zh) * | 2011-06-15 | 2013-12-18 | 安阳市凤凰光伏科技有限公司 | 铸造法生产类似单晶硅锭晶种制作方法 |
WO2014052130A1 (en) * | 2012-09-28 | 2014-04-03 | Saint-Gobain Ceramics & Plastics, Inc. | Modified microgrinding process |
JP6145596B2 (ja) * | 2013-03-15 | 2017-06-14 | 秋田県 | 研磨装置および研磨装置に用いられるアタッチメント |
CN104526525B (zh) * | 2014-12-15 | 2016-10-05 | 福州大学 | 一种高效电化学电极抛光机及其使用方法 |
RU2748973C1 (ru) * | 2020-11-18 | 2021-06-02 | Акционерное Общество "ФОМОС-МАТЕРИАЛЫ" | Способ изготовления монокристаллических чувствительных элементов для высоковольтных оптических измерительных трансформаторов напряжения |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2965556A (en) * | 1959-04-15 | 1960-12-20 | Struers Chemiske Lab H | Apparatus for the electro-mechanical polishing of surfaces |
US3073764A (en) * | 1960-04-13 | 1963-01-15 | Bell Telephone Labor Inc | Process for electropolishing semiconductor surfaces |
USB161573I5 (it) * | 1961-12-22 | |||
DE1446067A1 (de) * | 1962-04-27 | 1969-01-23 | Telefunken Patent | Verfahren zum Polieren von Halbleiterscheiben unter gleichzeitiger Anwendung einer elektrolytischen und einer mechanischen Behandlung |
DE1216651B (de) * | 1963-03-28 | 1966-05-12 | Siemens Ag | Verfahren zum polierenden Abtragen von einkristallinen Halbleiterkoerpern, insbesondere Halbleiterscheiben |
US3293162A (en) * | 1964-06-30 | 1966-12-20 | Bell Telephone Labor Inc | Process for electropolishing both sides of a semiconductor simultaneously |
US3437543A (en) * | 1965-03-09 | 1969-04-08 | Western Electric Co | Apparatus for polishing |
SU808230A1 (ru) * | 1977-07-07 | 1981-02-28 | Предприятие П/Я В-2438 | Устройство дл электрохимическогошлифОВАНи |
US4256535A (en) * | 1979-12-05 | 1981-03-17 | Western Electric Company, Inc. | Method of polishing a semiconductor wafer |
JPS571278A (en) * | 1980-06-05 | 1982-01-06 | Fujitsu Ltd | Polishing method of linbo3 wafer |
US4547073A (en) * | 1981-02-17 | 1985-10-15 | Matsushita Electric Industrial Co., Ltd. | Surface examining apparatus and method |
JPS5958827A (ja) * | 1982-09-28 | 1984-04-04 | Toshiba Corp | 半導体ウエ−ハ、半導体ウエ−ハの製造方法及び半導体ウエ−ハの製造装置 |
JPS5980933A (ja) * | 1982-11-01 | 1984-05-10 | Nippon Telegr & Teleph Corp <Ntt> | 導電性体の研摩方法 |
JPS62208868A (ja) * | 1986-03-07 | 1987-09-14 | Nec Corp | シリコンウエ−ハの加工方法 |
JPH07964A (ja) * | 1993-02-05 | 1995-01-06 | Yukiaki Matsuo | 電解生成水とその製造方法 |
-
1989
- 1989-09-05 DE DE3929484A patent/DE3929484A1/de active Granted
-
1990
- 1990-09-03 IT IT48246A patent/IT1241551B/it active IP Right Grant
- 1990-09-04 JP JP2232602A patent/JPH0397226A/ja active Pending
- 1990-09-04 US US07/577,678 patent/US5110428A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0397226A (ja) | 1991-04-23 |
DE3929484A1 (de) | 1991-03-14 |
US5110428A (en) | 1992-05-05 |
DE3929484C2 (it) | 1992-07-30 |
IT9048246A0 (it) | 1990-09-03 |
IT9048246A1 (it) | 1992-03-03 |
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Legal Events
Date | Code | Title | Description |
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0001 | Granted |