IN2014DE00713A - - Google Patents
Download PDFInfo
- Publication number
- IN2014DE00713A IN2014DE00713A IN713DE2014A IN2014DE00713A IN 2014DE00713 A IN2014DE00713 A IN 2014DE00713A IN 713DE2014 A IN713DE2014 A IN 713DE2014A IN 2014DE00713 A IN2014DE00713 A IN 2014DE00713A
- Authority
- IN
- India
- Prior art keywords
- read
- optimal
- word line
- read operation
- level
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2254—Calibration
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130027722A KR102131802B1 (ko) | 2013-03-15 | 2013-03-15 | 비휘발성 메모리 장치의 데이터 독출 방법, 비휘발성 메모리 장치, 및 메모리 시스템의 구동 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014DE00713A true IN2014DE00713A (fr) | 2015-06-19 |
Family
ID=50555212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN713DE2014 IN2014DE00713A (fr) | 2013-03-15 | 2014-03-12 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9412471B2 (fr) |
| JP (1) | JP6580302B2 (fr) |
| KR (1) | KR102131802B1 (fr) |
| CN (1) | CN104051016B (fr) |
| AU (1) | AU2014200492B2 (fr) |
| DE (1) | DE102014103129B4 (fr) |
| IN (1) | IN2014DE00713A (fr) |
| NL (1) | NL2012398B1 (fr) |
| TW (1) | TWI631564B (fr) |
Families Citing this family (78)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11614893B2 (en) | 2010-09-15 | 2023-03-28 | Pure Storage, Inc. | Optimizing storage device access based on latency |
| WO2015037159A1 (fr) * | 2013-09-13 | 2015-03-19 | 株式会社 東芝 | Dispositif de mémoire à semi-conducteurs et système de mémoire |
| US9411521B2 (en) * | 2014-05-30 | 2016-08-09 | Macronix International Co., Ltd. | Method and apparatus for improving sequential memory read preformance |
| KR20160011939A (ko) * | 2014-07-23 | 2016-02-02 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 그것의 동작 방법 |
| US9953722B2 (en) | 2015-01-08 | 2018-04-24 | SK Hynix Inc. | Methods of system optimization by over-sampling read |
| KR102277521B1 (ko) | 2015-01-23 | 2021-07-16 | 삼성전자주식회사 | 저장 장치 및 그것의 리드 리클레임 및 읽기 방법 |
| KR102265220B1 (ko) * | 2015-03-09 | 2021-06-16 | 에스케이하이닉스 주식회사 | 컨트롤러, 반도체 메모리 시스템 및 그것의 동작 방법 |
| CN106169308B (zh) * | 2015-03-16 | 2020-09-15 | 爱思开海力士有限公司 | 存储器控制器及其操作方法 |
| US9613691B2 (en) * | 2015-03-27 | 2017-04-04 | Intel Corporation | Apparatus and method for drift cancellation in a memory |
| TWI582779B (zh) * | 2015-04-14 | 2017-05-11 | 群聯電子股份有限公司 | 讀取電壓準位估測方法、記憶體儲存裝置及記憶體控制電路單元 |
| TWI562152B (en) * | 2015-05-29 | 2016-12-11 | Phison Electronics Corp | Decoding method, memory storage device and memory control circuit unit |
| KR102302433B1 (ko) | 2015-06-10 | 2021-09-16 | 삼성전자주식회사 | 불 휘발성 메모리 장치 및 그것의 소거 방법 |
| KR20170004693A (ko) * | 2015-07-03 | 2017-01-11 | 에스케이하이닉스 주식회사 | 메모리 장치의 컨트롤러 및 그 동작 방법 |
| CN107017026B (zh) * | 2015-10-28 | 2020-04-28 | 威盛电子股份有限公司 | 非易失性存储器装置及其读取方法 |
| CN106653087A (zh) * | 2015-10-28 | 2017-05-10 | 光宝电子(广州)有限公司 | 固态存储装置及其相关读取控制方法 |
| KR102378541B1 (ko) * | 2015-11-27 | 2022-03-25 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 그것의 동작 방법 |
| KR20170065076A (ko) | 2015-12-02 | 2017-06-13 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
| KR102420588B1 (ko) * | 2015-12-04 | 2022-07-13 | 삼성전자주식회사 | 비휘발성 메모리 장치, 메모리 시스템, 비휘발성 메모리 장치의 동작 방법 및 메모리 시스템의 동작 방법 |
| KR20170075065A (ko) | 2015-12-22 | 2017-07-03 | 에스케이하이닉스 주식회사 | 메모리 시스템 동작 방법 |
| CN105529050B (zh) * | 2015-12-31 | 2019-09-03 | 记忆科技(深圳)有限公司 | 一种降低对uwl进行读取发生时间超时错误的方法 |
| KR102529171B1 (ko) * | 2016-02-26 | 2023-05-04 | 삼성전자주식회사 | 메모리 장치 진단 시스템 |
| CN107179960B (zh) * | 2016-03-09 | 2020-05-26 | 群联电子股份有限公司 | 解码方法、存储器控制电路单元及存储器存储装置 |
| KR102585221B1 (ko) * | 2016-04-21 | 2023-10-05 | 삼성전자주식회사 | 메모리 장치, 메모리 시스템 및 메모리 장치의 동작 방법 |
| TWI612525B (zh) * | 2016-07-07 | 2018-01-21 | 群聯電子股份有限公司 | 解碼方法、記憶體儲存裝置及記憶體控制電路單元 |
| US9953709B2 (en) | 2016-09-06 | 2018-04-24 | Toshiba Memory Corporation | Semiconductor memory device and memory system |
| US10289484B2 (en) * | 2016-09-16 | 2019-05-14 | Micron Technology, Inc. | Apparatuses and methods for generating probabilistic information with current integration sensing |
| US10756816B1 (en) | 2016-10-04 | 2020-08-25 | Pure Storage, Inc. | Optimized fibre channel and non-volatile memory express access |
| KR20180051272A (ko) * | 2016-11-08 | 2018-05-16 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 그것의 동작 방법 |
| CN108241549B (zh) * | 2016-12-27 | 2021-04-30 | 北京兆易创新科技股份有限公司 | 基于ECC的NAND数据Read Retry纠错方法和NAND控制器 |
| US10163518B2 (en) * | 2017-01-13 | 2018-12-25 | Samsung Electronics Co., Ltd. | Non-volatile memory device for reading data with optimized read voltage |
| TWI615852B (zh) * | 2017-01-19 | 2018-02-21 | 群聯電子股份有限公司 | 記憶體重讀方法、記憶體儲存裝置及記憶體控制電路單元 |
| US10095568B2 (en) | 2017-02-08 | 2018-10-09 | Seagate Technology Llc | Background reads to condition programmed semiconductor memory cells |
| KR102302187B1 (ko) * | 2017-03-13 | 2021-09-14 | 삼성전자주식회사 | 비휘발성 메모리 장치의 동작 방법 및 비휘발성 메모리 장치 |
| KR20180110412A (ko) | 2017-03-29 | 2018-10-10 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 이의 동작 방법 |
| US11237908B2 (en) | 2017-03-29 | 2022-02-01 | SK Hynix Inc. | Memory system and operating method thereof |
| US10229749B2 (en) * | 2017-03-31 | 2019-03-12 | Samsung Electronics Co., Ltd. | Nonvolatile memory storage system |
| US10381090B2 (en) * | 2017-03-31 | 2019-08-13 | Samsung Electronics Co., Ltd. | Operation method of nonvolatile memory device and storage device |
| US11947814B2 (en) | 2017-06-11 | 2024-04-02 | Pure Storage, Inc. | Optimizing resiliency group formation stability |
| KR102353363B1 (ko) * | 2017-08-14 | 2022-01-20 | 에스케이하이닉스 주식회사 | 메모리 시스템의 동작 방법 |
| KR102384733B1 (ko) * | 2017-09-26 | 2022-04-08 | 삼성전자주식회사 | 반도체 메모리 장치, 반도체 메모리 장치의 동작 방법 및 메모리 시스템 |
| KR102496272B1 (ko) * | 2017-09-27 | 2023-02-03 | 삼성전자주식회사 | 비휘발성 메모리 장치, 및 이의 동작 방법 |
| US10446198B2 (en) | 2017-10-02 | 2019-10-15 | Micron Technology, Inc. | Multiple concurrent modulation schemes in a memory system |
| US10725913B2 (en) | 2017-10-02 | 2020-07-28 | Micron Technology, Inc. | Variable modulation scheme for memory device access or operation |
| US10490245B2 (en) | 2017-10-02 | 2019-11-26 | Micron Technology, Inc. | Memory system that supports dual-mode modulation |
| US11403241B2 (en) | 2017-10-02 | 2022-08-02 | Micron Technology, Inc. | Communicating data with stacked memory dies |
| US10355893B2 (en) | 2017-10-02 | 2019-07-16 | Micron Technology, Inc. | Multiplexing distinct signals on a single pin of a memory device |
| US10860475B1 (en) | 2017-11-17 | 2020-12-08 | Pure Storage, Inc. | Hybrid flash translation layer |
| CN108052279B (zh) * | 2017-11-23 | 2020-06-19 | 深圳市江波龙电子股份有限公司 | 一种提升闪存性能的方法、装置、设备及存储介质 |
| CN110246533B (zh) * | 2018-03-09 | 2020-11-13 | 建兴储存科技(广州)有限公司 | 固态储存装置的失败模式检测方法及错误更正方法 |
| US10541010B2 (en) * | 2018-03-19 | 2020-01-21 | Micron Technology, Inc. | Memory device with configurable input/output interface |
| JP2019169211A (ja) | 2018-03-22 | 2019-10-03 | 東芝メモリ株式会社 | メモリシステム |
| KR102396743B1 (ko) * | 2018-07-16 | 2022-05-12 | 에스케이하이닉스 주식회사 | 메모리 장치, 이를 포함하는 메모리 시스템 및 그것의 동작 방법 |
| US10475492B1 (en) | 2018-07-27 | 2019-11-12 | Macronix International Co., Ltd. | Circuit and method for read latency control |
| CN110797069B (zh) * | 2018-08-01 | 2021-10-22 | 群联电子股份有限公司 | 电压调整方法、存储器控制电路单元以及存储器存储装置 |
| US11520514B2 (en) | 2018-09-06 | 2022-12-06 | Pure Storage, Inc. | Optimized relocation of data based on data characteristics |
| US11500570B2 (en) | 2018-09-06 | 2022-11-15 | Pure Storage, Inc. | Efficient relocation of data utilizing different programming modes |
| KR102599117B1 (ko) * | 2018-11-14 | 2023-11-06 | 삼성전자주식회사 | 블록들의 온 셀 카운트들을 모니터링하고 저장하는 스토리지 장치 및 그것의 동작 방법 |
| KR102651440B1 (ko) * | 2018-11-15 | 2024-03-27 | 에스케이하이닉스 주식회사 | 저장 장치 및 그 동작 방법 |
| US10915395B2 (en) * | 2018-11-16 | 2021-02-09 | Micron Technology, Inc. | Read retry with targeted auto read calibrate |
| US11714572B2 (en) | 2019-06-19 | 2023-08-01 | Pure Storage, Inc. | Optimized data resiliency in a modular storage system |
| KR20210027980A (ko) * | 2019-09-03 | 2021-03-11 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러 및 그 동작 방법 |
| KR20210045214A (ko) * | 2019-10-16 | 2021-04-26 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그것의 동작 방법 |
| US11029889B1 (en) * | 2019-12-20 | 2021-06-08 | Western Digital Technologies, Inc. | Soft bit read mode selection for non-volatile memory |
| US11494254B2 (en) * | 2019-12-20 | 2022-11-08 | Cnex Labs, Inc. | Storage system with predictive adjustment mechanism and method of operation thereof |
| US11217319B2 (en) * | 2020-02-28 | 2022-01-04 | SK Hynix Inc. | Read threshold optimization systems and methods by multi-dimensional search |
| US11507297B2 (en) | 2020-04-15 | 2022-11-22 | Pure Storage, Inc. | Efficient management of optimal read levels for flash storage systems |
| US11416338B2 (en) | 2020-04-24 | 2022-08-16 | Pure Storage, Inc. | Resiliency scheme to enhance storage performance |
| US11474986B2 (en) | 2020-04-24 | 2022-10-18 | Pure Storage, Inc. | Utilizing machine learning to streamline telemetry processing of storage media |
| US11768763B2 (en) | 2020-07-08 | 2023-09-26 | Pure Storage, Inc. | Flash secure erase |
| US11513974B2 (en) | 2020-09-08 | 2022-11-29 | Pure Storage, Inc. | Using nonce to control erasure of data blocks of a multi-controller storage system |
| US11681448B2 (en) | 2020-09-08 | 2023-06-20 | Pure Storage, Inc. | Multiple device IDs in a multi-fabric module storage system |
| KR20220079235A (ko) * | 2020-12-04 | 2022-06-13 | 에스케이하이닉스 주식회사 | 저장 장치 및 그 동작 방법 |
| US11487455B2 (en) | 2020-12-17 | 2022-11-01 | Pure Storage, Inc. | Dynamic block allocation to optimize storage system performance |
| CN112506443B (zh) * | 2020-12-22 | 2022-01-04 | 长江存储科技有限责任公司 | 三维存储器的读取方法及设备 |
| US11630593B2 (en) | 2021-03-12 | 2023-04-18 | Pure Storage, Inc. | Inline flash memory qualification in a storage system |
| US11562790B1 (en) | 2021-06-30 | 2023-01-24 | Micron Technology, Inc. | Systems and methods for adaptive self-referenced reads of memory devices |
| US11832410B2 (en) | 2021-09-14 | 2023-11-28 | Pure Storage, Inc. | Mechanical energy absorbing bracket apparatus |
| KR20230085625A (ko) * | 2021-12-07 | 2023-06-14 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그 동작 방법 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6282145B1 (en) * | 1999-01-14 | 2001-08-28 | Silicon Storage Technology, Inc. | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system |
| US7038928B1 (en) | 2004-11-17 | 2006-05-02 | Macronix International Co., Ltd. | Method of determining optimal voltages for operating two-side non-volatile memory and the operating methods |
| US7954037B2 (en) * | 2005-10-25 | 2011-05-31 | Sandisk Il Ltd | Method for recovering from errors in flash memory |
| US7450425B2 (en) * | 2006-08-30 | 2008-11-11 | Micron Technology, Inc. | Non-volatile memory cell read failure reduction |
| US7941590B2 (en) | 2006-11-06 | 2011-05-10 | Marvell World Trade Ltd. | Adaptive read and write systems and methods for memory cells |
| KR100907218B1 (ko) | 2007-03-28 | 2009-07-10 | 삼성전자주식회사 | 읽기 레벨 제어 장치 및 그 방법 |
| US7849383B2 (en) * | 2007-06-25 | 2010-12-07 | Sandisk Corporation | Systems and methods for reading nonvolatile memory using multiple reading schemes |
| KR100888842B1 (ko) * | 2007-06-28 | 2009-03-17 | 삼성전자주식회사 | 읽기 전압을 최적화할 수 있는 플래시 메모리 장치 및그것의 독출 전압 설정 방법 |
| KR100859258B1 (ko) * | 2007-09-10 | 2008-09-18 | 주식회사 하이닉스반도체 | 플래시 메모리 장치 및 동작 방법 |
| KR101406279B1 (ko) * | 2007-12-20 | 2014-06-13 | 삼성전자주식회사 | 반도체 메모리 장치 및 그것의 읽기 페일 분석 방법 |
| KR100953047B1 (ko) | 2007-12-28 | 2010-04-14 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 동작 방법 |
| KR20090117172A (ko) | 2008-05-08 | 2009-11-12 | 삼성전자주식회사 | 메모리 장치 및 메모리 데이터 읽기 방법 |
| US7957187B2 (en) | 2008-05-09 | 2011-06-07 | Sandisk Corporation | Dynamic and adaptive optimization of read compare levels based on memory cell threshold voltage distribution |
| US7808831B2 (en) | 2008-06-30 | 2010-10-05 | Sandisk Corporation | Read disturb mitigation in non-volatile memory |
| KR100996009B1 (ko) | 2009-02-02 | 2010-11-22 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자 및 그 동작 방법 |
| US7653779B1 (en) * | 2009-02-04 | 2010-01-26 | Gene Fein | Memory storage using a look-up table |
| KR101626528B1 (ko) | 2009-06-19 | 2016-06-01 | 삼성전자주식회사 | 플래시 메모리 장치 및 이의 데이터 독출 방법 |
| US8072805B2 (en) | 2009-08-18 | 2011-12-06 | Skymedi Corporation | Method and system of finding a read voltage for a flash memory |
| JP5349256B2 (ja) * | 2009-11-06 | 2013-11-20 | 株式会社東芝 | メモリシステム |
| US8737136B2 (en) * | 2010-07-09 | 2014-05-27 | Stec, Inc. | Apparatus and method for determining a read level of a memory cell based on cycle information |
| KR101727704B1 (ko) | 2010-10-04 | 2017-04-18 | 삼성전자주식회사 | 리드 성능을 향상시킬 수 있는 리드 파라미터 변경 방법과 상기 방법을 수행할 수 있는 장치들 |
| KR20120046868A (ko) * | 2010-10-29 | 2012-05-11 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치, 반도체 시스템 및 데이터 감지방법 |
| KR101792868B1 (ko) * | 2010-11-25 | 2017-11-02 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 읽기 방법 |
| JP2012133832A (ja) | 2010-12-20 | 2012-07-12 | Samsung Yokohama Research Institute Co Ltd | 不揮発性半導体記憶装置、及び読み出し電圧検出方法 |
| JP2012203957A (ja) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | メモリシステム |
| US8510636B2 (en) * | 2011-04-01 | 2013-08-13 | Intel Corporation | Dynamic read channel calibration for non-volatile memory devices |
| KR101756111B1 (ko) * | 2011-04-15 | 2017-07-10 | 삼성전자 주식회사 | 메모리 컨트롤러 구동방법, 메모리 컨트롤러, 메모리 장치 및 메모리 시스템 |
| EP2549482B1 (fr) * | 2011-07-22 | 2018-05-23 | SanDisk Technologies LLC | Appareil, système et procédé pour la détermination d'un paramètre de configuration pour des mémoires à sémi-conducteurs. |
| KR20130027722A (ko) | 2011-09-08 | 2013-03-18 | 양원동 | 체크밸브가 설치된 용기 캡 |
| KR20130034522A (ko) * | 2011-09-28 | 2013-04-05 | 삼성전자주식회사 | 비휘발성 메모리 장치의 데이터 리드 방법, 및 이를 수행하는 장치 |
| US8839073B2 (en) * | 2012-05-04 | 2014-09-16 | Lsi Corporation | Zero-one balance management in a solid-state disk controller |
| US8938659B2 (en) * | 2012-05-04 | 2015-01-20 | Lsi Corporation | Low-density parity-check decoder disparity preprocessing |
-
2013
- 2013-03-15 KR KR1020130027722A patent/KR102131802B1/ko active IP Right Grant
-
2014
- 2014-01-30 AU AU2014200492A patent/AU2014200492B2/en active Active
- 2014-02-21 US US14/186,504 patent/US9412471B2/en active Active
- 2014-03-10 DE DE102014103129.6A patent/DE102014103129B4/de active Active
- 2014-03-11 NL NL2012398A patent/NL2012398B1/en active
- 2014-03-11 TW TW103108279A patent/TWI631564B/zh active
- 2014-03-12 IN IN713DE2014 patent/IN2014DE00713A/en unknown
- 2014-03-13 JP JP2014049854A patent/JP6580302B2/ja active Active
- 2014-03-17 CN CN201410099431.8A patent/CN104051016B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102131802B1 (ko) | 2020-07-08 |
| CN104051016A (zh) | 2014-09-17 |
| AU2014200492B2 (en) | 2019-01-17 |
| US20140281770A1 (en) | 2014-09-18 |
| TWI631564B (zh) | 2018-08-01 |
| US9412471B2 (en) | 2016-08-09 |
| TW201435887A (zh) | 2014-09-16 |
| AU2014200492A1 (en) | 2014-10-02 |
| KR20140112968A (ko) | 2014-09-24 |
| JP6580302B2 (ja) | 2019-09-25 |
| DE102014103129B4 (de) | 2022-11-03 |
| NL2012398A (en) | 2014-09-16 |
| JP2014182864A (ja) | 2014-09-29 |
| CN104051016B (zh) | 2019-07-26 |
| NL2012398B1 (en) | 2016-07-22 |
| DE102014103129A1 (de) | 2014-09-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IN2014DE00713A (fr) | ||
| WO2014164134A3 (fr) | Détection d'effet d'un événement de corruption sur des données préchargées dans une mémoire non volatile | |
| TW201614505A (en) | Memory cell and memory array | |
| ZA201902298B (en) | Method and device for writing stored data into storage medium based on flash memory | |
| WO2014150505A3 (fr) | Système et procédé de détermination de tensions de lecture d'un dispositif de stockage de données | |
| EP3462326A4 (fr) | Dispositif nvme et procédés de lecture et d'écriture de données nvme | |
| TW201614651A (en) | Apparatuses and methods for performing an exclusive or operation using sensing circuitry | |
| GB201301474D0 (en) | Implementing enhanced data read for multi-level cell (MLC) memory using threshold voltage-drift or reistance drift tolerant moving baseline memory data | |
| GB201301473D0 (en) | Implementing Enhanced Data Partial-Erase for Multi-Level Cell (MLC) Memory Using Threshold Voltage-Drift or Resistance Drift Tolerant Moving Baseline Memory | |
| TW201614669A (en) | Error processing method, memory storage device and memory controlling circuit unit | |
| TW201614479A (en) | Non-volatile memory device and control method for controller | |
| TWI561982B (en) | Data storage device and flash memory control method | |
| WO2013016397A3 (fr) | Lecture post-écriture dans des mémoires non volatiles au moyen d'une comparaison de données écrites dans des formats binaire et multi-état | |
| MX364783B (es) | Estructuras de unidades de estado sólido. | |
| EP2955633A4 (fr) | Procédé et dispositif d'effacement de données pour une mémoire flash | |
| EP2779175A3 (fr) | Logique pour vérification de retenue pour mémoire non volatile | |
| IN2014MN01055A (fr) | ||
| IN2014MU00845A (fr) | ||
| EP2698718A4 (fr) | Procédé et dispositif de lecture et d'écriture de données, et système de stockage | |
| TW201207854A (en) | Semiconductor device and method for driving the same | |
| TWI561981B (en) | Data reading method, memory control circuit unit and memory storage apparatus | |
| EP2966577A4 (fr) | Dispositif de lecture électronique et son procédé d'extraction et de sauvegarde d'informations de texte, et support de stockage | |
| EP3642842A4 (fr) | Circuit amplificateur de détection amélioré pour lire des données dans une cellule de mémoire flash | |
| SG10201900584TA (en) | Method Of Writing Data In Nonvolatile Memory Device, Method Of Erasing Data In Nonvolatile Memory Device, And Nonvolatile Memory Device Performing The Same | |
| EP3007076A4 (fr) | Dispositif de sortie d'informations relatives à l'ordre des mots dans une traduction, procédé de sortie d'informations relatives à l'ordre des mots dans une traduction, et support d'enregistrement |