CN108241549B - 基于ECC的NAND数据Read Retry纠错方法和NAND控制器 - Google Patents
基于ECC的NAND数据Read Retry纠错方法和NAND控制器 Download PDFInfo
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- CN108241549B CN108241549B CN201611225069.XA CN201611225069A CN108241549B CN 108241549 B CN108241549 B CN 108241549B CN 201611225069 A CN201611225069 A CN 201611225069A CN 108241549 B CN108241549 B CN 108241549B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
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CN201611225069.XA CN108241549B (zh) | 2016-12-27 | 2016-12-27 | 基于ECC的NAND数据Read Retry纠错方法和NAND控制器 |
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CN201611225069.XA CN108241549B (zh) | 2016-12-27 | 2016-12-27 | 基于ECC的NAND数据Read Retry纠错方法和NAND控制器 |
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CN108241549A CN108241549A (zh) | 2018-07-03 |
CN108241549B true CN108241549B (zh) | 2021-04-30 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109284201A (zh) * | 2018-09-17 | 2019-01-29 | 至誉科技(武汉)有限公司 | 温度均衡数据恢复方法以及系统、存储介质 |
CN111863107B (zh) * | 2019-04-28 | 2022-08-02 | 武汉海康存储技术有限公司 | 闪存纠错方法及装置 |
CN113470723B (zh) * | 2021-06-29 | 2023-07-14 | 成都佰维存储科技有限公司 | 读重试测试方法、装置、可读存储介质及电子设备 |
CN113707211B (zh) * | 2021-07-21 | 2024-05-10 | 深圳市宏旺微电子有限公司 | 一种闪存Read Retry纠错的方法及装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201237872A (en) * | 2011-03-14 | 2012-09-16 | Phison Electronics Corp | Data reading method, memory storage apparatus and memory controller thereof |
CN103035294A (zh) * | 2011-09-28 | 2013-04-10 | 三星电子株式会社 | 从非易失性存储器读数据的方法及实施方法的设备和系统 |
CN105097028A (zh) * | 2014-05-13 | 2015-11-25 | 三星电子株式会社 | 包括非易失性存储器件的存储装置和该器件的读取方法 |
CN105719696A (zh) * | 2014-12-18 | 2016-06-29 | 爱思开海力士有限公司 | 存储系统的操作方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8510637B2 (en) * | 2010-04-14 | 2013-08-13 | Phison Electronics Corp. | Data reading method, memory storage apparatus and memory controller thereof |
KR101727704B1 (ko) * | 2010-10-04 | 2017-04-18 | 삼성전자주식회사 | 리드 성능을 향상시킬 수 있는 리드 파라미터 변경 방법과 상기 방법을 수행할 수 있는 장치들 |
KR102081415B1 (ko) * | 2013-03-15 | 2020-02-25 | 삼성전자주식회사 | 비휘발성 메모리 장치의 llr 최적화 방법 및 비휘발성 메모리 장치의 에러 정정 방법 |
KR102131802B1 (ko) * | 2013-03-15 | 2020-07-08 | 삼성전자주식회사 | 비휘발성 메모리 장치의 데이터 독출 방법, 비휘발성 메모리 장치, 및 메모리 시스템의 구동 방법 |
CN104952486B (zh) * | 2014-03-25 | 2019-10-25 | 群联电子股份有限公司 | 数据储存方法、存储器控制电路单元以及存储器储存装置 |
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- 2016-12-27 CN CN201611225069.XA patent/CN108241549B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201237872A (en) * | 2011-03-14 | 2012-09-16 | Phison Electronics Corp | Data reading method, memory storage apparatus and memory controller thereof |
CN103035294A (zh) * | 2011-09-28 | 2013-04-10 | 三星电子株式会社 | 从非易失性存储器读数据的方法及实施方法的设备和系统 |
CN105097028A (zh) * | 2014-05-13 | 2015-11-25 | 三星电子株式会社 | 包括非易失性存储器件的存储装置和该器件的读取方法 |
CN105719696A (zh) * | 2014-12-18 | 2016-06-29 | 爱思开海力士有限公司 | 存储系统的操作方法 |
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |