CN108241549A - 基于ECC的NAND数据Read Retry纠错方法和NAND控制器 - Google Patents
基于ECC的NAND数据Read Retry纠错方法和NAND控制器 Download PDFInfo
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- CN108241549A CN108241549A CN201611225069.XA CN201611225069A CN108241549A CN 108241549 A CN108241549 A CN 108241549A CN 201611225069 A CN201611225069 A CN 201611225069A CN 108241549 A CN108241549 A CN 108241549A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- Engineering & Computer Science (AREA)
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- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- Detection And Correction Of Errors (AREA)
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109284201A (zh) * | 2018-09-17 | 2019-01-29 | 至誉科技(武汉)有限公司 | 温度均衡数据恢复方法以及系统、存储介质 |
CN111863107A (zh) * | 2019-04-28 | 2020-10-30 | 武汉海康存储技术有限公司 | 闪存纠错方法及装置 |
CN113470723A (zh) * | 2021-06-29 | 2021-10-01 | 成都佰维存储科技有限公司 | 读重试测试方法、装置、可读存储介质及电子设备 |
CN113707211A (zh) * | 2021-07-21 | 2021-11-26 | 深圳市宏旺微电子有限公司 | 一种闪存Read Retry纠错的方法及装置 |
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US20110258496A1 (en) * | 2010-04-14 | 2011-10-20 | Phison Electronics Corp. | Data reading method, memory storage apparatus and memory controller thereof |
TW201237872A (en) * | 2011-03-14 | 2012-09-16 | Phison Electronics Corp | Data reading method, memory storage apparatus and memory controller thereof |
CN103035294A (zh) * | 2011-09-28 | 2013-04-10 | 三星电子株式会社 | 从非易失性存储器读数据的方法及实施方法的设备和系统 |
CN104052498A (zh) * | 2013-03-15 | 2014-09-17 | 三星电子株式会社 | 最优化对数似然比的方法以及纠错方法和设备 |
CN104051016A (zh) * | 2013-03-15 | 2014-09-17 | 三星电子株式会社 | 非易失性存储装置、读取数据方法、存储系统及操作方法 |
US9009390B2 (en) * | 2010-10-04 | 2015-04-14 | Samsung Electronics Co., Ltd. | Method for changing read parameter for improving read performance and apparatuses using the same |
CN104952486A (zh) * | 2014-03-25 | 2015-09-30 | 群联电子股份有限公司 | 数据储存方法、存储器控制电路单元以及存储器储存装置 |
CN105097028A (zh) * | 2014-05-13 | 2015-11-25 | 三星电子株式会社 | 包括非易失性存储器件的存储装置和该器件的读取方法 |
CN105719696A (zh) * | 2014-12-18 | 2016-06-29 | 爱思开海力士有限公司 | 存储系统的操作方法 |
-
2016
- 2016-12-27 CN CN201611225069.XA patent/CN108241549B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US20110258496A1 (en) * | 2010-04-14 | 2011-10-20 | Phison Electronics Corp. | Data reading method, memory storage apparatus and memory controller thereof |
US9009390B2 (en) * | 2010-10-04 | 2015-04-14 | Samsung Electronics Co., Ltd. | Method for changing read parameter for improving read performance and apparatuses using the same |
TW201237872A (en) * | 2011-03-14 | 2012-09-16 | Phison Electronics Corp | Data reading method, memory storage apparatus and memory controller thereof |
CN103035294A (zh) * | 2011-09-28 | 2013-04-10 | 三星电子株式会社 | 从非易失性存储器读数据的方法及实施方法的设备和系统 |
CN104052498A (zh) * | 2013-03-15 | 2014-09-17 | 三星电子株式会社 | 最优化对数似然比的方法以及纠错方法和设备 |
CN104051016A (zh) * | 2013-03-15 | 2014-09-17 | 三星电子株式会社 | 非易失性存储装置、读取数据方法、存储系统及操作方法 |
CN104952486A (zh) * | 2014-03-25 | 2015-09-30 | 群联电子股份有限公司 | 数据储存方法、存储器控制电路单元以及存储器储存装置 |
CN105097028A (zh) * | 2014-05-13 | 2015-11-25 | 三星电子株式会社 | 包括非易失性存储器件的存储装置和该器件的读取方法 |
CN105719696A (zh) * | 2014-12-18 | 2016-06-29 | 爱思开海力士有限公司 | 存储系统的操作方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109284201A (zh) * | 2018-09-17 | 2019-01-29 | 至誉科技(武汉)有限公司 | 温度均衡数据恢复方法以及系统、存储介质 |
CN111863107A (zh) * | 2019-04-28 | 2020-10-30 | 武汉海康存储技术有限公司 | 闪存纠错方法及装置 |
CN111863107B (zh) * | 2019-04-28 | 2022-08-02 | 武汉海康存储技术有限公司 | 闪存纠错方法及装置 |
CN113470723A (zh) * | 2021-06-29 | 2021-10-01 | 成都佰维存储科技有限公司 | 读重试测试方法、装置、可读存储介质及电子设备 |
CN113470723B (zh) * | 2021-06-29 | 2023-07-14 | 成都佰维存储科技有限公司 | 读重试测试方法、装置、可读存储介质及电子设备 |
CN113707211A (zh) * | 2021-07-21 | 2021-11-26 | 深圳市宏旺微电子有限公司 | 一种闪存Read Retry纠错的方法及装置 |
CN113707211B (zh) * | 2021-07-21 | 2024-05-10 | 深圳市宏旺微电子有限公司 | 一种闪存Read Retry纠错的方法及装置 |
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CN108241549B (zh) | 2021-04-30 |
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
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