MX364783B - Estructuras de unidades de estado sólido. - Google Patents
Estructuras de unidades de estado sólido.Info
- Publication number
- MX364783B MX364783B MX2015006298A MX2015006298A MX364783B MX 364783 B MX364783 B MX 364783B MX 2015006298 A MX2015006298 A MX 2015006298A MX 2015006298 A MX2015006298 A MX 2015006298A MX 364783 B MX364783 B MX 364783B
- Authority
- MX
- Mexico
- Prior art keywords
- solid state
- flash
- state drive
- drive architectures
- dram logical
- Prior art date
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
- G11C14/0018—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell whereby the nonvolatile element is an EEPROM element, e.g. a floating gate or metal-nitride-oxide-silicon [MNOS] transistor
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/20—Handling requests for interconnection or transfer for access to input/output bus
- G06F13/28—Handling requests for interconnection or transfer for access to input/output bus using burst mode transfer, e.g. direct memory access DMA, cycle steal
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/0643—Management of files
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0658—Controller construction arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7201—Logical to physical mapping or translation of blocks or pages
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0683—Plurality of storage devices
- G06F3/0688—Non-volatile semiconductor memory arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
Abstract
A unidad de estado sólido incluye memoria flash lógica DRAM y memoria flash, en donde el procesador del sistema lee y escribe solamente en la memoria flash lógica DRAM que minimiza las escrituras en la memoria flash. Un método para la operación de un dispositivo flash de estado sólido incluye escribir, por una CPU, en una unidad de estado sólido mediante el envío de comandos y datos a la memoria flash lógica DRAM usando comandos y formateo flash.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261728394P | 2012-11-20 | 2012-11-20 | |
US201361775327P | 2013-03-08 | 2013-03-08 | |
PCT/US2013/070789 WO2014081719A1 (en) | 2012-11-20 | 2013-11-19 | Solid state drive architectures |
Publications (2)
Publication Number | Publication Date |
---|---|
MX2015006298A MX2015006298A (es) | 2015-12-09 |
MX364783B true MX364783B (es) | 2019-05-07 |
Family
ID=50776495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2015006298A MX364783B (es) | 2012-11-20 | 2013-11-19 | Estructuras de unidades de estado sólido. |
Country Status (8)
Country | Link |
---|---|
US (4) | US9941007B2 (es) |
EP (1) | EP2923358A4 (es) |
JP (2) | JP6465806B2 (es) |
CN (1) | CN105103234A (es) |
CA (1) | CA2891355C (es) |
MX (1) | MX364783B (es) |
TW (1) | TWI636396B (es) |
WO (1) | WO2014081719A1 (es) |
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- 2013-11-19 JP JP2015543117A patent/JP6465806B2/ja active Active
- 2013-11-19 CN CN201380070964.7A patent/CN105103234A/zh active Pending
- 2013-11-19 WO PCT/US2013/070789 patent/WO2014081719A1/en active Application Filing
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WO2014081719A1 (en) | 2014-05-30 |
JP2018106746A (ja) | 2018-07-05 |
JP2016501403A (ja) | 2016-01-18 |
TW201435729A (zh) | 2014-09-16 |
US20150046625A1 (en) | 2015-02-12 |
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US20220139455A1 (en) | 2022-05-05 |
EP2923358A1 (en) | 2015-09-30 |
EP2923358A4 (en) | 2016-06-29 |
CN105103234A (zh) | 2015-11-25 |
TWI636396B (zh) | 2018-09-21 |
US10796762B2 (en) | 2020-10-06 |
US9941007B2 (en) | 2018-04-10 |
CA2891355C (en) | 2022-04-05 |
JP6465806B2 (ja) | 2019-02-06 |
US20210020245A1 (en) | 2021-01-21 |
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