IN170397B - - Google Patents

Info

Publication number
IN170397B
IN170397B IN81/MAS/88A IN81MA1988A IN170397B IN 170397 B IN170397 B IN 170397B IN 81MA1988 A IN81MA1988 A IN 81MA1988A IN 170397 B IN170397 B IN 170397B
Authority
IN
India
Application number
IN81/MAS/88A
Other languages
English (en)
Inventor
Shyr Richard
Original Assignee
Gen Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Instrument Corp filed Critical Gen Instrument Corp
Priority to IN283/MAS/91A priority Critical patent/IN171737B/en
Publication of IN170397B publication Critical patent/IN170397B/en

Links

Classifications

    • H10W72/0198—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10P52/00—
    • H10P54/00—
    • H10W99/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1082—Partial cutting bonded sandwich [e.g., grooving or incising]
IN81/MAS/88A 1988-01-27 1988-02-09 IN170397B (index.php)

Priority Applications (1)

Application Number Priority Date Filing Date Title
IN283/MAS/91A IN171737B (index.php) 1988-01-27 1991-04-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/143,916 US4904610A (en) 1988-01-27 1988-01-27 Wafer level process for fabricating passivated semiconductor devices

Publications (1)

Publication Number Publication Date
IN170397B true IN170397B (index.php) 1992-03-21

Family

ID=22506252

Family Applications (1)

Application Number Title Priority Date Filing Date
IN81/MAS/88A IN170397B (index.php) 1988-01-27 1988-02-09

Country Status (5)

Country Link
US (1) US4904610A (index.php)
EP (1) EP0325704A3 (index.php)
JP (1) JPH025447A (index.php)
KR (1) KR0135609B1 (index.php)
IN (1) IN170397B (index.php)

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FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
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JP2001035817A (ja) 1999-07-22 2001-02-09 Toshiba Corp ウェーハの分割方法及び半導体装置の製造方法
JP2001313350A (ja) * 2000-04-28 2001-11-09 Sony Corp チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法
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DE10158563C1 (de) * 2001-11-29 2003-07-17 Infineon Technologies Ag Verfahren zur Herstellung eines Bauelementmoduls
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JP4316186B2 (ja) 2002-04-05 2009-08-19 シャープ株式会社 半導体装置及びその製造方法
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FR2889887B1 (fr) * 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US8778780B1 (en) * 2005-10-13 2014-07-15 SemiLEDs Optoelectronics Co., Ltd. Method for defining semiconductor devices
KR100652442B1 (ko) * 2005-11-09 2006-12-01 삼성전자주식회사 반도체 칩 및 그 제조 방법
JP2008053500A (ja) * 2006-08-25 2008-03-06 Disco Abrasive Syst Ltd ウエーハの分割方法
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) * 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
JP5259336B2 (ja) * 2008-10-23 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
FR2947098A1 (fr) * 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US8624348B2 (en) 2011-11-11 2014-01-07 Invensas Corporation Chips with high fracture toughness through a metal ring
TWI450325B (zh) * 2012-03-22 2014-08-21 Alpha & Omega Semiconductor 一種支援從晶圓背面實施切割的晶片封裝方法
US9129959B2 (en) 2012-08-21 2015-09-08 Infineon Technologies Ag Method for manufacturing an electronic module and an electronic module
KR102243674B1 (ko) * 2019-10-28 2021-04-23 주식회사 루츠 세라믹칩 제조방법
CN110797315B (zh) * 2019-11-06 2021-06-11 烟台睿创微纳技术股份有限公司 一种晶圆级封装分割方法及晶圆级封装器件

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Also Published As

Publication number Publication date
EP0325704A3 (en) 1990-03-21
US4904610A (en) 1990-02-27
JPH025447A (ja) 1990-01-10
KR0135609B1 (ko) 1998-04-25
EP0325704A2 (en) 1989-08-02
KR890012356A (ko) 1989-08-25

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