IN161892B - - Google Patents

Info

Publication number
IN161892B
IN161892B IN1169/CAL/83A IN1169CA1983A IN161892B IN 161892 B IN161892 B IN 161892B IN 1169CA1983 A IN1169CA1983 A IN 1169CA1983A IN 161892 B IN161892 B IN 161892B
Authority
IN
India
Prior art keywords
sub
reaction gases
microwave energy
added
vessel
Prior art date
Application number
IN1169/CAL/83A
Other languages
English (en)
Inventor
Stanford Robert Ovshinsky
David Dean Alfred
Lee Walter
Stephen Jenkins Hudgens
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IN161892B publication Critical patent/IN161892B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H01J37/32275—Microwave reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
IN1169/CAL/83A 1982-09-24 1983-09-24 IN161892B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/423,424 US4517223A (en) 1982-09-24 1982-09-24 Method of making amorphous semiconductor alloys and devices using microwave energy

Publications (1)

Publication Number Publication Date
IN161892B true IN161892B (de) 1988-02-20

Family

ID=23678863

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1169/CAL/83A IN161892B (de) 1982-09-24 1983-09-24

Country Status (16)

Country Link
US (1) US4517223A (de)
EP (2) EP0175223A1 (de)
JP (2) JPS5978528A (de)
KR (1) KR910005370B1 (de)
AT (1) ATE27186T1 (de)
AU (1) AU560168B2 (de)
BR (1) BR8305222A (de)
CA (1) CA1219240A (de)
DE (1) DE3371543D1 (de)
EG (1) EG15981A (de)
ES (2) ES8503453A1 (de)
IE (1) IE54688B1 (de)
IL (1) IL69773A (de)
IN (1) IN161892B (de)
PH (1) PH20277A (de)
ZA (1) ZA837086B (de)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
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US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
DE3330910A1 (de) * 1983-08-27 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum herstellen eines reaktionsgefaesses fuer kristallzuchtzwecke
US4619729A (en) 1984-02-14 1986-10-28 Energy Conversion Devices, Inc. Microwave method of making semiconductor members
EP0160202A3 (de) * 1984-04-30 1988-09-21 Ovonic Synthetic Materials Company, Inc. Abscheidung von Überzügen mittels eines Mikrowellenplasmas und die dadurch hergestellten Überzüge
US4678679A (en) * 1984-06-25 1987-07-07 Energy Conversion Devices, Inc. Continuous deposition of activated process gases
US4568614A (en) * 1984-06-27 1986-02-04 Energy Conversion Devices, Inc. Steel article having a disordered silicon oxide coating thereon and method of preparing the coating
US4663183A (en) * 1984-09-10 1987-05-05 Energy Conversion Devices, Inc. Glow discharge method of applying a carbon coating onto a substrate
US4759947A (en) * 1984-10-08 1988-07-26 Canon Kabushiki Kaisha Method for forming deposition film using Si compound and active species from carbon and halogen compound
US5476694A (en) * 1984-10-24 1995-12-19 Canon Kabushiki Kaisha Method for forming deposited film by separately introducing an active species and a silicon compound into a film-forming chamber
US4566403A (en) * 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US4778692A (en) * 1985-02-20 1988-10-18 Canon Kabushiki Kaisha Process for forming deposited film
US4784874A (en) * 1985-02-20 1988-11-15 Canon Kabushiki Kaisha Process for forming deposited film
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
US4801468A (en) * 1985-02-25 1989-01-31 Canon Kabushiki Kaisha Process for forming deposited film
JP2537175B2 (ja) * 1985-03-27 1996-09-25 キヤノン株式会社 機能性堆積膜の製造装置
US4637895A (en) * 1985-04-01 1987-01-20 Energy Conversion Devices, Inc. Gas mixtures for the vapor deposition of semiconductor material
DE3514094A1 (de) * 1985-04-16 1986-10-23 Schering AG, Berlin und Bergkamen, 1000 Berlin Herstellung metallischer strukturen auf anorganischen nichtleitern
JP2660243B2 (ja) * 1985-08-08 1997-10-08 株式会社半導体エネルギー研究所 半導体装置作製方法
US4729341A (en) * 1985-09-18 1988-03-08 Energy Conversion Devices, Inc. Method and apparatus for making electrophotographic devices
CA1315614C (en) * 1985-10-23 1993-04-06 Shunichi Ishihara Method for forming deposited film
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
JPH0647727B2 (ja) * 1985-12-24 1994-06-22 キヤノン株式会社 堆積膜形成法
JPH0647730B2 (ja) * 1985-12-25 1994-06-22 キヤノン株式会社 堆積膜形成法
JPH0651906B2 (ja) * 1985-12-25 1994-07-06 キヤノン株式会社 堆積膜形成法
JPH084071B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 堆積膜形成法
JPH084072B2 (ja) * 1986-01-14 1996-01-17 キヤノン株式会社 堆積膜形成法
JP2636215B2 (ja) * 1986-01-31 1997-07-30 キヤノン株式会社 堆積膜形成装置
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DE3742110C2 (de) * 1986-12-12 1996-02-22 Canon Kk Verfahren zur Bildung funktioneller aufgedampfter Filme durch ein chemisches Mikrowellen-Plasma-Aufdampfverfahren
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US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
EP0406690B1 (de) * 1989-06-28 1997-03-12 Canon Kabushiki Kaisha Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
US5214002A (en) * 1989-10-25 1993-05-25 Agency Of Industrial Science And Technology Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step
JP3099957B2 (ja) * 1990-01-17 2000-10-16 株式会社リコー 光導電部材
JP2714247B2 (ja) * 1990-10-29 1998-02-16 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置
JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
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JP3101330B2 (ja) * 1991-01-23 2000-10-23 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置
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US5256576A (en) * 1992-02-14 1993-10-26 United Solar Systems Corporation Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer
US5298086A (en) * 1992-05-15 1994-03-29 United Solar Systems Corporation Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby
US5476798A (en) * 1992-06-29 1995-12-19 United Solar Systems Corporation Plasma deposition process with substrate temperature control
AU4768793A (en) * 1992-06-29 1994-01-24 United Solar Systems Corporation Microwave energized deposition process with substrate temperature control
US5670224A (en) * 1992-11-13 1997-09-23 Energy Conversion Devices, Inc. Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates
US5334423A (en) * 1993-01-28 1994-08-02 United Solar Systems Corp. Microwave energized process for the preparation of high quality semiconductor material
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US6255718B1 (en) 1995-02-28 2001-07-03 Chip Express Corporation Laser ablateable material
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US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
US6667240B2 (en) 2000-03-09 2003-12-23 Canon Kabushiki Kaisha Method and apparatus for forming deposited film
US6610362B1 (en) 2000-11-20 2003-08-26 Intel Corporation Method of forming a carbon doped oxide layer on a substrate
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US7789965B2 (en) * 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
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US7871937B2 (en) 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
US20100266765A1 (en) * 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
US8101245B1 (en) 2010-08-12 2012-01-24 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies
US8222125B2 (en) 2010-08-12 2012-07-17 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies
US8048782B1 (en) 2010-08-12 2011-11-01 Ovshinsky Innovation Llc Plasma deposition of amorphous semiconductors at microwave frequencies
US8592060B2 (en) 2010-12-21 2013-11-26 HGST Netherlands B.V. Perpendicular magnetic recording media having low medium noise and systems using the same
US9299557B2 (en) 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
US9474163B2 (en) 2014-12-30 2016-10-18 Asm Ip Holding B.V. Germanium oxide pre-clean module and process
US10373850B2 (en) 2015-03-11 2019-08-06 Asm Ip Holding B.V. Pre-clean chamber and process with substrate tray for changing substrate temperature
CN105244251B (zh) * 2015-11-03 2017-11-17 长飞光纤光缆股份有限公司 一种大功率等离子体微波谐振腔
CN105502918B (zh) * 2015-12-25 2019-01-25 长飞光纤光缆股份有限公司 一种双腔型等离子体微波谐振腔

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Also Published As

Publication number Publication date
IL69773A0 (en) 1983-12-30
PH20277A (en) 1986-11-14
ES525911A0 (es) 1985-02-16
ATE27186T1 (de) 1987-05-15
JPS5978528A (ja) 1984-05-07
EP0104907B1 (de) 1987-05-13
IL69773A (en) 1986-07-31
JPH0234911A (ja) 1990-02-05
KR840005915A (ko) 1984-11-19
EP0104907A3 (en) 1984-07-25
DE3371543D1 (en) 1987-06-19
ES8503453A1 (es) 1985-02-16
JPH0419703B2 (de) 1992-03-31
EP0175223A1 (de) 1986-03-26
ZA837086B (en) 1984-05-30
ES532535A0 (es) 1985-03-01
ES8503892A1 (es) 1985-03-01
BR8305222A (pt) 1984-05-02
EG15981A (en) 1987-10-30
AU560168B2 (en) 1987-04-02
KR910005370B1 (ko) 1991-07-29
CA1219240A (en) 1987-03-17
IE54688B1 (en) 1990-01-03
IE832238L (en) 1984-03-24
AU1938383A (en) 1984-03-29
EP0104907A2 (de) 1984-04-04
US4517223A (en) 1985-05-14

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