IL67248A - Amorphous silicon alloy photovoltaic device and its manufacture - Google Patents

Amorphous silicon alloy photovoltaic device and its manufacture

Info

Publication number
IL67248A
IL67248A IL67248A IL6724882A IL67248A IL 67248 A IL67248 A IL 67248A IL 67248 A IL67248 A IL 67248A IL 6724882 A IL6724882 A IL 6724882A IL 67248 A IL67248 A IL 67248A
Authority
IL
Israel
Prior art keywords
manufacture
amorphous silicon
photovoltaic device
silicon alloy
alloy photovoltaic
Prior art date
Application number
IL67248A
Other languages
English (en)
Other versions
IL67248A0 (en
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IL67248A0 publication Critical patent/IL67248A0/xx
Publication of IL67248A publication Critical patent/IL67248A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
IL67248A 1981-12-14 1982-11-12 Amorphous silicon alloy photovoltaic device and its manufacture IL67248A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/330,571 US4379943A (en) 1981-12-14 1981-12-14 Current enhanced photovoltaic device

Publications (2)

Publication Number Publication Date
IL67248A0 IL67248A0 (en) 1983-03-31
IL67248A true IL67248A (en) 1986-03-31

Family

ID=23290352

Family Applications (1)

Application Number Title Priority Date Filing Date
IL67248A IL67248A (en) 1981-12-14 1982-11-12 Amorphous silicon alloy photovoltaic device and its manufacture

Country Status (17)

Country Link
US (1) US4379943A (de)
JP (2) JPS58145171A (de)
AU (1) AU543910B2 (de)
BR (1) BR8207108A (de)
CA (1) CA1189601A (de)
DE (1) DE3244626A1 (de)
FR (1) FR2518318B1 (de)
GB (1) GB2111303B (de)
IE (1) IE54526B1 (de)
IL (1) IL67248A (de)
IN (1) IN156202B (de)
IT (1) IT1153374B (de)
MX (1) MX152173A (de)
NL (1) NL8204754A (de)
PH (1) PH19556A (de)
SE (1) SE457125B (de)
ZA (1) ZA828716B (de)

Families Citing this family (73)

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US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
US4485125A (en) * 1982-03-19 1984-11-27 Energy Conversion Devices, Inc. Method for continuously producing tandem amorphous photovoltaic cells
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US4521447A (en) * 1982-10-18 1985-06-04 Sovonics Solar Systems Method and apparatus for making layered amorphous semiconductor alloys using microwave energy
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JPH0614552B2 (ja) * 1983-02-02 1994-02-23 富士ゼロックス株式会社 光電変換素子の製造方法
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US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
JPS59207620A (ja) * 1983-05-10 1984-11-24 Zenko Hirose アモルフアスシリコン成膜装置
ES8602301A1 (es) * 1983-07-18 1985-11-01 Energy Conversion Devices Inc Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas
US4782376A (en) * 1983-09-21 1988-11-01 General Electric Company Photovoltaic device with increased open circuit voltage
US4642144A (en) * 1983-10-06 1987-02-10 Exxon Research And Engineering Company Proximity doping of amorphous semiconductors
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US4542256A (en) * 1984-04-27 1985-09-17 University Of Delaware Graded affinity photovoltaic cell
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JPH0620147B2 (ja) * 1984-05-11 1994-03-16 三洋電機株式会社 光起電力装置
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JPH0799777B2 (ja) * 1986-03-27 1995-10-25 住友電気工業株式会社 非晶質半導体素子
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US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
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JP2999280B2 (ja) * 1991-02-22 2000-01-17 キヤノン株式会社 光起電力素子
US5256887A (en) * 1991-07-19 1993-10-26 Solarex Corporation Photovoltaic device including a boron doping profile in an i-type layer
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US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture
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US6080644A (en) * 1998-02-06 2000-06-27 Burr-Brown Corporation Complementary bipolar/CMOS epitaxial structure and process
US20060211272A1 (en) * 2005-03-17 2006-09-21 The Regents Of The University Of California Architecture for high efficiency polymer photovoltaic cells using an optical spacer
US8791359B2 (en) * 2006-01-28 2014-07-29 Banpil Photonics, Inc. High efficiency photovoltaic cells
US8373060B2 (en) * 2006-10-24 2013-02-12 Zetta Research and Development LLC—AQT Series Semiconductor grain microstructures for photovoltaic cells
US8426722B2 (en) 2006-10-24 2013-04-23 Zetta Research and Development LLC—AQT Series Semiconductor grain and oxide layer for photovoltaic cells
US8158880B1 (en) * 2007-01-17 2012-04-17 Aqt Solar, Inc. Thin-film photovoltaic structures including semiconductor grain and oxide layers
US20080173349A1 (en) * 2007-01-22 2008-07-24 United Solar Ovonic Llc Solar cells for stratospheric and outer space use
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US20090272438A1 (en) * 2008-05-05 2009-11-05 Emcore Corporation Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell
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Also Published As

Publication number Publication date
AU543910B2 (en) 1985-05-09
IE822913L (en) 1983-06-14
FR2518318A1 (fr) 1983-06-17
NL8204754A (nl) 1983-07-01
CA1189601A (en) 1985-06-25
IL67248A0 (en) 1983-03-31
JPH0434314B2 (de) 1992-06-05
IN156202B (de) 1985-06-01
IT1153374B (it) 1987-01-14
DE3244626C2 (de) 1989-09-28
IE54526B1 (en) 1989-11-08
FR2518318B1 (fr) 1987-10-02
GB2111303A (en) 1983-06-29
IT8224631A0 (it) 1982-12-06
PH19556A (en) 1986-05-21
IT8224631A1 (it) 1984-06-06
AU9145282A (en) 1983-06-23
US4379943A (en) 1983-04-12
DE3244626A1 (de) 1983-06-16
JPH06188440A (ja) 1994-07-08
BR8207108A (pt) 1983-10-11
ZA828716B (en) 1983-10-26
SE8207034L (sv) 1983-06-15
SE8207034D0 (sv) 1982-12-09
MX152173A (es) 1985-06-04
GB2111303B (en) 1985-07-03
JPH07123169B2 (ja) 1995-12-25
SE457125B (sv) 1988-11-28
JPS58145171A (ja) 1983-08-29

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