Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
  • H01L29/122—Single quantum well structures
  • H01L29/125—Quantum wire structures
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66007—Multistep manufacturing processes
  • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
  • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
  • H01L29/66409—Unipolar field-effect transistors
  • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Computer Hardware Design (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• High Energy & Nuclear Physics (AREA)
• Manufacturing & Machinery (AREA)
• Chemical & Material Sciences (AREA)
• Nanotechnology (AREA)
• Crystallography & Structural Chemistry (AREA)
• Theoretical Computer Science (AREA)
• Mathematical Physics (AREA)
• Health & Medical Sciences (AREA)
• Toxicology (AREA)
• Physical Vapour Deposition (AREA)
• Thin Film Transistor (AREA)
• Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
• Drying Of Semiconductors (AREA)
• Testing Or Measuring Of Semiconductors Or The Like (AREA)
• Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=20227346

Family Applications (1)

Country Status (23)

Families Citing this family (105)

Family Cites Families (1)

• 1999
  • 1999-11-25 RU RU99124768/28A patent/RU2173003C2/ru not_active IP Right Cessation
• 2000
  • 2000-03-14 US US09/525,722 patent/US6274007B1/en not_active Expired - Fee Related
  • 2000-03-21 EP EP00302277A patent/EP1104011A1/en not_active Withdrawn
  • 2000-03-22 JP JP2000079824A patent/JP2001156050A/ja active Pending
  • 2000-10-02 EE EEP200200261A patent/EE200200261A/xx unknown
  • 2000-10-02 AU AU75474/00A patent/AU7547400A/en not_active Abandoned
  • 2000-10-02 IL IL14983200A patent/IL149832A0/xx unknown
  • 2000-10-02 SK SK744-2002A patent/SK7442002A3/sk not_active Application Discontinuation
  • 2000-10-02 MX MXPA02005281A patent/MXPA02005281A/es unknown
  • 2000-10-02 PL PL00355890A patent/PL355890A1/xx not_active Application Discontinuation
  • 2000-10-02 CZ CZ20021824A patent/CZ20021824A3/cs unknown
  • 2000-10-02 WO PCT/IB2000/001397 patent/WO2001039259A1/en not_active Application Discontinuation
  • 2000-10-02 HU HU0203517A patent/HUP0203517A2/hu unknown
  • 2000-10-02 BR BR0016095-4A patent/BR0016095A/pt not_active Application Discontinuation
  • 2000-10-02 CN CN00816289A patent/CN1399791A/zh active Pending
  • 2000-10-02 KR KR1020027006725A patent/KR20020069195A/ko not_active Application Discontinuation
  • 2000-10-02 CA CA002392307A patent/CA2392307A1/en not_active Abandoned
• 2002
  • 2002-05-22 NO NO20022427A patent/NO20022427L/no not_active Application Discontinuation
  • 2002-05-24 IS IS6393A patent/IS6393A/is unknown
  • 2002-05-24 YU YU38202A patent/YU38202A/sh unknown
  • 2002-05-24 HR HR20020459A patent/HRP20020459A2/xx not_active Application Discontinuation
  • 2002-05-27 BG BG106739A patent/BG106739A/xx unknown
  • 2002-06-14 ZA ZA200204822A patent/ZA200204822B/xx unknown

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