IL146345A0 - Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating - Google Patents

Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating

Info

Publication number
IL146345A0
IL146345A0 IL14634500A IL14634500A IL146345A0 IL 146345 A0 IL146345 A0 IL 146345A0 IL 14634500 A IL14634500 A IL 14634500A IL 14634500 A IL14634500 A IL 14634500A IL 146345 A0 IL146345 A0 IL 146345A0
Authority
IL
Israel
Prior art keywords
copper electroplating
liquid
pretreatment liquid
pretreatment
copper
Prior art date
Application number
IL14634500A
Other languages
English (en)
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of IL146345A0 publication Critical patent/IL146345A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
IL14634500A 2000-01-20 2000-05-26 Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating IL146345A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000011620 2000-01-20
JP2000042158A JP4394234B2 (ja) 2000-01-20 2000-02-21 銅電気めっき液及び銅電気めっき方法
PCT/JP2000/003394 WO2001053569A1 (en) 2000-01-20 2000-05-26 Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating

Publications (1)

Publication Number Publication Date
IL146345A0 true IL146345A0 (en) 2002-07-25

Family

ID=26583839

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14634500A IL146345A0 (en) 2000-01-20 2000-05-26 Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating

Country Status (10)

Country Link
US (1) US6562222B1 (ko)
EP (2) EP1249517B1 (ko)
JP (1) JP4394234B2 (ko)
KR (1) KR100484351B1 (ko)
CN (1) CN1190520C (ko)
DE (1) DE60045523D1 (ko)
IL (1) IL146345A0 (ko)
MY (1) MY127269A (ko)
TW (1) TW573072B (ko)
WO (1) WO2001053569A1 (ko)

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JP4011336B2 (ja) * 2001-12-07 2007-11-21 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用純銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
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US6716771B2 (en) * 2002-04-09 2004-04-06 Intel Corporation Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface
JP3987069B2 (ja) * 2002-09-05 2007-10-03 日鉱金属株式会社 高純度硫酸銅及びその製造方法
KR100454270B1 (ko) * 2002-11-29 2004-10-26 엘지전선 주식회사 저조도 전해동박의 제조방법 및 전해동박
US7777078B2 (en) 2002-12-18 2010-08-17 Nikko Materials Co., Ltd. Copper electrolytic solution and electrolytic copper foil produced therewith
EP1607495A4 (en) * 2002-12-25 2006-07-12 Nikko Materials Co Ltd COPPER ELECTROLYTE SOLUTION CONTAINS A QUINTERNATIVE AMINO-BONDED POLYMER COMPRISING A PARTICULAR SCAFFOLD AND ORGANIC SULFUR COMPOUND AS ADDITIONS AND ELECTROLYTIC COPPER FOIL MANUFACTURED THEREWITH
CN100364061C (zh) * 2003-06-04 2008-01-23 花王株式会社 剥离剂组合物以及使用该剥离剂组合物的剥离洗涤方法
US7182849B2 (en) * 2004-02-27 2007-02-27 Taiwan Semiconducotr Manufacturing Co., Ltd. ECP polymer additives and method for reducing overburden and defects
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US20070004587A1 (en) * 2005-06-30 2007-01-04 Intel Corporation Method of forming metal on a substrate using a Ruthenium-based catalyst
EP1741804B1 (en) * 2005-07-08 2016-04-27 Rohm and Haas Electronic Materials, L.L.C. Electrolytic copper plating method
JP5659411B2 (ja) * 2006-01-27 2015-01-28 奥野製薬工業株式会社 含リン銅をアノードとする電解銅めっき液用添加剤、電解銅めっき液及び電解銅めっき方法
JP2009228078A (ja) * 2008-03-24 2009-10-08 Fujitsu Ltd 電解メッキ液、電解メッキ方法、および半導体装置の製造方法
KR20120100947A (ko) * 2009-09-28 2012-09-12 바스프 에스이 구리 전기도금을 하기 위한 웨이퍼의 전처리 방법
JP2011179085A (ja) * 2010-03-02 2011-09-15 C Uyemura & Co Ltd 電気めっき用前処理剤、電気めっきの前処理方法及び電気めっき方法
KR101871029B1 (ko) 2010-09-27 2018-06-25 제이엑스금속주식회사 프린트 배선판용 구리박, 그 제조 방법, 프린트 배선판용 수지 기판 및 프린트 배선판
JP2012092366A (ja) * 2010-10-25 2012-05-17 Imec 銅の電着方法
US8778462B2 (en) * 2011-11-10 2014-07-15 E I Du Pont De Nemours And Company Method for producing metalized fibrous composite sheet with olefin coating
US20130167461A1 (en) * 2011-12-28 2013-07-04 E. I. Du Pont De Nemours And Company Method for producing metalized fibrous composite sheet with olefin coating
US8741393B2 (en) 2011-12-28 2014-06-03 E I Du Pont De Nemours And Company Method for producing metalized fibrous composite sheet with olefin coating
CN102703938B (zh) * 2012-06-07 2015-04-22 上海交通大学 硫酸铜电镀液的应力消除剂
US9598787B2 (en) * 2013-03-14 2017-03-21 Rohm And Haas Electronic Materials Llc Method of filling through-holes
CN103436926A (zh) * 2013-08-19 2013-12-11 沈阳理工大学 一种硅烷偶联剂与金属镍离子共沉积的方法
JP5857310B2 (ja) * 2013-09-30 2016-02-10 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
CN105297084B (zh) * 2015-11-16 2018-11-02 泉州方寸新材料科技有限公司 一种冷轧板三价铬电镀方法
CN105297083B (zh) * 2015-11-16 2018-11-02 泉州方寸新材料科技有限公司 一种冷轧板三价铬电镀镀液
US10512174B2 (en) 2016-02-15 2019-12-17 Rohm And Haas Electronic Materials Llc Method of filling through-holes to reduce voids and other defects
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Also Published As

Publication number Publication date
CN1190520C (zh) 2005-02-23
US6562222B1 (en) 2003-05-13
KR20020074195A (ko) 2002-09-28
EP1865093A1 (en) 2007-12-12
JP4394234B2 (ja) 2010-01-06
CN1370245A (zh) 2002-09-18
WO2001053569A1 (en) 2001-07-26
KR100484351B1 (ko) 2005-04-20
TW573072B (en) 2004-01-21
JP2001271196A (ja) 2001-10-02
EP1249517A1 (en) 2002-10-16
DE60045523D1 (de) 2011-02-24
EP1249517A4 (en) 2003-05-02
MY127269A (en) 2006-11-30
EP1249517B1 (en) 2011-01-12
EP1865093B1 (en) 2012-03-28

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