IL146345A0 - Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating - Google Patents
Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplatingInfo
- Publication number
- IL146345A0 IL146345A0 IL14634500A IL14634500A IL146345A0 IL 146345 A0 IL146345 A0 IL 146345A0 IL 14634500 A IL14634500 A IL 14634500A IL 14634500 A IL14634500 A IL 14634500A IL 146345 A0 IL146345 A0 IL 146345A0
- Authority
- IL
- Israel
- Prior art keywords
- copper electroplating
- liquid
- pretreatment liquid
- pretreatment
- copper
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 3
- 229910052802 copper Inorganic materials 0.000 title 3
- 239000010949 copper Substances 0.000 title 3
- 238000009713 electroplating Methods 0.000 title 3
- 239000007788 liquid Substances 0.000 title 2
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000011620 | 2000-01-20 | ||
JP2000042158A JP4394234B2 (ja) | 2000-01-20 | 2000-02-21 | 銅電気めっき液及び銅電気めっき方法 |
PCT/JP2000/003394 WO2001053569A1 (en) | 2000-01-20 | 2000-05-26 | Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating |
Publications (1)
Publication Number | Publication Date |
---|---|
IL146345A0 true IL146345A0 (en) | 2002-07-25 |
Family
ID=26583839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL14634500A IL146345A0 (en) | 2000-01-20 | 2000-05-26 | Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating |
Country Status (10)
Country | Link |
---|---|
US (1) | US6562222B1 (xx) |
EP (2) | EP1865093B1 (xx) |
JP (1) | JP4394234B2 (xx) |
KR (1) | KR100484351B1 (xx) |
CN (1) | CN1190520C (xx) |
DE (1) | DE60045523D1 (xx) |
IL (1) | IL146345A0 (xx) |
MY (1) | MY127269A (xx) |
TW (1) | TW573072B (xx) |
WO (1) | WO2001053569A1 (xx) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040050706A1 (en) * | 2000-10-10 | 2004-03-18 | Masaru Seita | Copper electroplating method using insoluble anode |
WO2002055762A2 (en) * | 2000-11-03 | 2002-07-18 | Shipley Company, L.L.C. | Electrochemical co-deposition of metals for electronic device manufacture |
JP4076751B2 (ja) * | 2001-10-22 | 2008-04-16 | 日鉱金属株式会社 | 電気銅めっき方法、電気銅めっき用含リン銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ |
JP4011336B2 (ja) * | 2001-12-07 | 2007-11-21 | 日鉱金属株式会社 | 電気銅めっき方法、電気銅めっき用純銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ |
US7316772B2 (en) * | 2002-03-05 | 2008-01-08 | Enthone Inc. | Defect reduction in electrodeposited copper for semiconductor applications |
US8002962B2 (en) | 2002-03-05 | 2011-08-23 | Enthone Inc. | Copper electrodeposition in microelectronics |
JP4034095B2 (ja) * | 2002-03-18 | 2008-01-16 | 日鉱金属株式会社 | 電気銅めっき方法及び電気銅めっき用含リン銅アノード |
US6716771B2 (en) * | 2002-04-09 | 2004-04-06 | Intel Corporation | Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface |
US7887603B2 (en) * | 2002-09-05 | 2011-02-15 | Jx Nippon Mining & Metals Corporation | High purity copper sulfate and method for production thereof |
KR100454270B1 (ko) * | 2002-11-29 | 2004-10-26 | 엘지전선 주식회사 | 저조도 전해동박의 제조방법 및 전해동박 |
EP1574599B1 (en) | 2002-12-18 | 2010-07-07 | Nippon Mining & Metals Co., Ltd. | Copper electrolytic solution and electrolytic copper foil produced therewith |
JP4083171B2 (ja) * | 2002-12-25 | 2008-04-30 | 日鉱金属株式会社 | 特定骨格を有する四級アミン化合物重合体及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔 |
CN100364061C (zh) * | 2003-06-04 | 2008-01-23 | 花王株式会社 | 剥离剂组合物以及使用该剥离剂组合物的剥离洗涤方法 |
US7182849B2 (en) * | 2004-02-27 | 2007-02-27 | Taiwan Semiconducotr Manufacturing Co., Ltd. | ECP polymer additives and method for reducing overburden and defects |
TW200613586A (en) * | 2004-07-22 | 2006-05-01 | Rohm & Haas Elect Mat | Leveler compounds |
US20070004587A1 (en) * | 2005-06-30 | 2007-01-04 | Intel Corporation | Method of forming metal on a substrate using a Ruthenium-based catalyst |
EP1741804B1 (en) * | 2005-07-08 | 2016-04-27 | Rohm and Haas Electronic Materials, L.L.C. | Electrolytic copper plating method |
JP5659411B2 (ja) * | 2006-01-27 | 2015-01-28 | 奥野製薬工業株式会社 | 含リン銅をアノードとする電解銅めっき液用添加剤、電解銅めっき液及び電解銅めっき方法 |
JP2009228078A (ja) * | 2008-03-24 | 2009-10-08 | Fujitsu Ltd | 電解メッキ液、電解メッキ方法、および半導体装置の製造方法 |
WO2011036158A2 (en) * | 2009-09-28 | 2011-03-31 | Basf Se | Wafer pretreatment for copper electroplating |
JP2011179085A (ja) * | 2010-03-02 | 2011-09-15 | C Uyemura & Co Ltd | 電気めっき用前処理剤、電気めっきの前処理方法及び電気めっき方法 |
US9028972B2 (en) | 2010-09-27 | 2015-05-12 | Jx Nippon Mining & Metals Corporation | Copper foil for printed wiring board, method for producing said copper foil, resin substrate for printed wiring board and printed wiring board |
JP2012092366A (ja) * | 2010-10-25 | 2012-05-17 | Imec | 銅の電着方法 |
US8778462B2 (en) * | 2011-11-10 | 2014-07-15 | E I Du Pont De Nemours And Company | Method for producing metalized fibrous composite sheet with olefin coating |
US8741393B2 (en) | 2011-12-28 | 2014-06-03 | E I Du Pont De Nemours And Company | Method for producing metalized fibrous composite sheet with olefin coating |
US20130167461A1 (en) * | 2011-12-28 | 2013-07-04 | E. I. Du Pont De Nemours And Company | Method for producing metalized fibrous composite sheet with olefin coating |
CN102703938B (zh) * | 2012-06-07 | 2015-04-22 | 上海交通大学 | 硫酸铜电镀液的应力消除剂 |
US9598787B2 (en) * | 2013-03-14 | 2017-03-21 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes |
CN103436926A (zh) * | 2013-08-19 | 2013-12-11 | 沈阳理工大学 | 一种硅烷偶联剂与金属镍离子共沉积的方法 |
JP5857310B2 (ja) * | 2013-09-30 | 2016-02-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびその製造方法 |
CN105297083B (zh) * | 2015-11-16 | 2018-11-02 | 泉州方寸新材料科技有限公司 | 一种冷轧板三价铬电镀镀液 |
CN105297084B (zh) * | 2015-11-16 | 2018-11-02 | 泉州方寸新材料科技有限公司 | 一种冷轧板三价铬电镀方法 |
US10508357B2 (en) | 2016-02-15 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes to reduce voids and other defects |
US10512174B2 (en) | 2016-02-15 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes to reduce voids and other defects |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4120805B1 (xx) * | 1963-12-27 | 1966-12-05 | ||
JPS50104143A (xx) * | 1974-01-23 | 1975-08-16 | ||
GB1415129A (en) * | 1974-07-03 | 1975-11-26 | Orion Radio | Production of bright copper electroplates |
JPS5121529A (ja) * | 1974-08-16 | 1976-02-20 | Hitachi Ltd | Pirorinsandometsukizeiseihimakuboshiho |
US4376685A (en) * | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
US5174886A (en) * | 1991-02-22 | 1992-12-29 | Mcgean-Rohco, Inc. | High-throw acid copper plating using inert electrolyte |
JP2678701B2 (ja) * | 1992-02-19 | 1997-11-17 | 石原薬品 株式会社 | 電気銅めっき液 |
JP3286744B2 (ja) * | 1993-05-24 | 2002-05-27 | 奥野製薬工業株式会社 | 非導電性材料表面に電気めっき層を直接形成する方法 |
JP3263750B2 (ja) * | 1993-12-08 | 2002-03-11 | 奥野製薬工業株式会社 | 酸性銅めっき浴及びこれを使用するめっき方法 |
JP3362512B2 (ja) * | 1994-07-20 | 2003-01-07 | 株式会社デンソー | 半導体ウエハのめっき方法およびめっき装置 |
JPH0839728A (ja) * | 1994-07-27 | 1996-02-13 | Sumitomo Metal Mining Co Ltd | 金属張積層基板の製造方法 |
JPH08139452A (ja) * | 1994-11-14 | 1996-05-31 | Hitachi Ltd | 多層配線基板の製造方法 |
JPH0978251A (ja) * | 1995-09-13 | 1997-03-25 | Hitachi Chem Co Ltd | 無電解銅めっきの前処理液 |
KR100327955B1 (ko) * | 1996-08-23 | 2002-05-09 | 마이클 에이. 센타니 | 고성능가요성라미네이트 |
DE19653681C2 (de) * | 1996-12-13 | 2000-04-06 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens |
US5863410A (en) * | 1997-06-23 | 1999-01-26 | Circuit Foil Usa, Inc. | Process for the manufacture of high quality very low profile copper foil and copper foil produced thereby |
US6270645B1 (en) | 1997-09-26 | 2001-08-07 | Circuit Foil Usa, Inc. | Simplified process for production of roughened copper foil |
US6270889B1 (en) * | 1998-01-19 | 2001-08-07 | Mitsui Mining & Smelting Co., Ltd. | Making and using an ultra-thin copper foil |
JP3276919B2 (ja) * | 1998-03-06 | 2002-04-22 | 英夫 本間 | 樹脂基材への高密着性めっき方法およびこれに用いる銅めっき液 |
US6113771A (en) | 1998-04-21 | 2000-09-05 | Applied Materials, Inc. | Electro deposition chemistry |
US6444110B2 (en) * | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
CN103475577B (zh) * | 2013-09-29 | 2017-02-08 | 小米科技有限责任公司 | 一种获得特征信息的方法、装置及网络设备 |
-
2000
- 2000-02-21 JP JP2000042158A patent/JP4394234B2/ja not_active Expired - Lifetime
- 2000-05-26 DE DE60045523T patent/DE60045523D1/de not_active Expired - Lifetime
- 2000-05-26 EP EP07016126A patent/EP1865093B1/en not_active Expired - Lifetime
- 2000-05-26 EP EP00931584A patent/EP1249517B1/en not_active Expired - Lifetime
- 2000-05-26 WO PCT/JP2000/003394 patent/WO2001053569A1/ja active IP Right Grant
- 2000-05-26 IL IL14634500A patent/IL146345A0/xx not_active IP Right Cessation
- 2000-05-26 KR KR10-2002-7008949A patent/KR100484351B1/ko active IP Right Grant
- 2000-05-26 CN CNB008118094A patent/CN1190520C/zh not_active Expired - Lifetime
- 2000-06-26 US US09/980,947 patent/US6562222B1/en not_active Expired - Lifetime
- 2000-10-31 TW TW89122872A patent/TW573072B/zh not_active IP Right Cessation
-
2001
- 2001-01-13 MY MYPI20010160A patent/MY127269A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP4394234B2 (ja) | 2010-01-06 |
WO2001053569A1 (en) | 2001-07-26 |
MY127269A (en) | 2006-11-30 |
EP1865093A1 (en) | 2007-12-12 |
EP1249517A4 (en) | 2003-05-02 |
KR100484351B1 (ko) | 2005-04-20 |
KR20020074195A (ko) | 2002-09-28 |
EP1249517B1 (en) | 2011-01-12 |
EP1249517A1 (en) | 2002-10-16 |
JP2001271196A (ja) | 2001-10-02 |
EP1865093B1 (en) | 2012-03-28 |
TW573072B (en) | 2004-01-21 |
CN1190520C (zh) | 2005-02-23 |
CN1370245A (zh) | 2002-09-18 |
US6562222B1 (en) | 2003-05-13 |
DE60045523D1 (de) | 2011-02-24 |
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Legal Events
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KB | Patent renewed | ||
KB | Patent renewed | ||
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EXP | Patent expired |